首页 |元器件品牌

DDA114TU [DIODES]

PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR; PNP预偏置小信号SOT - 63双表面贴装晶体管
DDA114TU
型号： DDA114TU
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR
PNP预偏置小信号SOT - 63双表面贴装晶体管

晶体 晶体管
文件： 总5页 (文件大小：89K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
DDA (xxxx) U  
PNP PRE-BIASED SMALL SIGNAL SOT-363  
DUAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Built-In Biasing Resistors  
SOT-363  
A
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Y M P X X  
C
B
B
Mechanical Data  
PXX YM  
C
·
·
·
·
Case: SOT-363, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking: Date Code and Marking Code  
(See Diagrams & Page 3)  
D
G
H
0.65 Nominal  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
H
M
J
·
·
L
D
F
K
0.90  
0.25  
0.10  
0°  
L
M
·
·
Weight: 0.006 grams (approx.)  
Ordering Information (See Page 3)  
a
All Dimensions in mm  
P/N  
R1  
R2  
MARKING  
R1  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
DDA143TU  
DDA114TU  
22KW  
47KW  
10KW  
2.2KW  
10KW  
4.7KW  
10KW  
22KW  
47KW  
47KW  
47KW  
10KW  
-
P17  
P20  
P14  
P06  
P13  
P07  
P12  
R2  
R1  
R2  
R1  
R1  
-
R1, R2  
R1 Only  
SCHEMATIC DIAGRAM  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VCC  
Supply Voltage, (3) to (1)  
Input Voltage, (2) to (1)  
50  
V
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
DDA143TU  
DDA114TU  
+10 to -40  
+10 to -40  
+6 to -40  
+5 to -12  
+10 to -40  
+5 Vmax  
+5 Vmax  
VIN  
V
Output Current  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
DDA143TU  
DDA114TU  
-30  
-30  
-70  
IO  
-100  
-50  
-100  
-100  
mA  
IC (Max)  
Pd  
Output Current  
All  
-100  
200  
mA  
mW  
°C/W  
°C  
Power Dissipation (Total)  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
625  
Tj, TSTG  
-55 to +150  
Note:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. 150mW per element must not be exceeded.  
DS30346 Rev. 2 - 2  
1 of 5  
DDA (xxxx) U  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic (DDA143TU & DDA114TU only) Symbol  
Min Typ  
Max  
¾
Unit  
V
Test Condition  
C = -50mA  
BVCBO  
BVCEO  
BVEBO  
ICBO  
I
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-50  
-50  
-5  
¾
¾
¾
¾
¾
IC = -1mA  
¾
V
IE = -50mA  
¾
V
V
CB = -50V  
¾
-0.5  
-0.5  
mA  
mA  
IEBO  
VEB = -4V  
Emitter Cutoff Current  
¾
IC/IB = -2.5mA / -0.25mA  
IC/IB = -1mA / -0.1mA  
DDA143TU  
DDA114TU  
VCE(sat)  
Collector-Emitter Saturation Voltage  
¾
¾
-0.3  
V
hFE  
DR1  
fT  
IC = -1mA, VCE = -5V  
DC Current Transfer Ratio  
Input Resistor (R1) Tolerance  
Gain-Bandwidth Product*  
100  
-30  
¾
250  
¾
600  
+30  
¾
¾
%
¾
VCE = -10V, IE = 5mA, f = 100MHz  
250  
MHz  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
DDA124EU  
-0.5  
-0.5  
-0.3  
-0.5  
-0.5  
-1.1  
-1.1  
--  
--  
-1.1  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
Vl(off)  
Vl(on)  
VO(on)  
VCC = -5V, IO = -100mA  
¾
Input Voltage  
V
V
VO = -0.3, IO = -5mA  
VO = -0.3, IO = -2mA  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
-1.9  
-1.9  
--  
--  
-1.9  
-3.0  
-3.0  
-1.4  
-1.1  
-3.0  
V
O = -0.3, IO = -1mA  
¾
¾
VO = -0.3, IO = -5mA  
VO = -0.3, IO = -10mA  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
IO/Il = -10mA / -0.5mA  
IO/Il = -10mA / -0.5mA  
IO/Il = -5mA / -0.25mA  
IO/Il = -5mA / -0.25mA  
IO/Il = -10mA / -0.5mA  
Output Voltage  
-0.1  
-0.3  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
-0.36  
-0.18  
VI = -5V  
Il  
Input Current  
¾
¾
¾
¾
¾
-0.88 mA  
-3.6  
-0.88  
VCC = -50V, VI = -0V  
IO(off)  
Output Current  
DC Current Gain  
-0.5  
mA  
VO = -5V, IO = -5mA  
VO = -5V, IO = -5mA  
DDA124EU  
DDA144EU  
DDA114YU  
DDA123JU  
DDA114EU  
56  
68  
68  
80  
30  
V
O = -5V, IO = -10mA  
Gl  
¾
¾
VO = -5V, IO = -10mA  
VO = -5V, IO = -5mA  
Input Resistor (R1) Tolerance  
Resistance Ratio Tolerance  
DR1  
-30  
-20  
¾
¾
+30  
+20  
%
¾
¾
R2/R1  
%
VCE = -10V, IE = -5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
250  
¾
MHz  
* Transistor - For Reference Only  
DS30346 Rev. 2 - 2  
2 of 5  
DDA (xxxx) U  
(Note 3)  
Ordering Information  
Device  
Packaging  
SOT-363  
SOT-363  
SOT-363  
SOT-363  
SOT-363  
SOT-363  
SOT-363  
Shipping  
DDA124EU-7  
DDA144EU-7  
DDA114YU-7  
DDA123JU-7  
DDA114EU-7  
DDA143TU-7  
DDA114TU-7  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Notes:  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
Y M P X X  
PXX YM  
PXX = Product Type Marking Code  
See Sheet 1 Diagrams  
YM = Date Code Marking  
Y = Year ex: N = 2002  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30346 Rev. 2 - 2  
3 of 5  
DDA (xxxx) U  
TYPICAL CURVES - DDA123JU  
ONE SECTION  
1
250  
200  
150  
100  
I /I = 10  
C
B
75°C  
0.1  
-25°C  
25°C  
0.01  
50  
0
0.001  
10  
40  
-50  
20  
0
30  
50  
0
50  
100  
150  
IC, COLLECTOR CURRENT (mA)  
Fig. 2 VCE(SAT) vs. IC  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Derating Curve  
12  
10  
1000  
VCE = 10  
IE = 0V  
75°C  
8
6
4
2
0
25°C  
-25°C  
100  
0
10  
15  
30  
20  
25  
5
10  
1
10  
100  
VR, REVERSE BIAS VOLTAGE (V)  
Fig. 4 Output Capacitance  
IC, COLLECTOR CURRENT (mA)  
Fig. 3 DC Current Gain  
10  
100  
75°C  
VO = 5V  
VO = 0.2  
25°C  
10  
1
-25°C  
-25°C  
75°C  
1
0.1  
0.01  
25°C  
0.001  
0.1  
1
6
7
8
9
0
2
3
4
5
10  
0
10  
20  
30  
40  
50  
Vin, INPUT VOLTAGE (V)  
Fig. 5 Collector Current Vs. Input Voltage  
IC, COLLECTOR CURRENT (mA)  
Fig. 6 Input Voltage vs. Collector Current  
DS30346 Rev. 2 - 2  
4 of 5  
DDA (xxxx) U  
TYPICAL CURVES - DDA114TU  
ONE SECTION  
1
250  
200  
150  
100  
I /I = 10  
C
B
25°C  
0.1  
-25°C  
75°C  
0.01  
50  
0
0.001  
-50  
0
50  
100  
150  
10  
40  
20  
0
30  
50  
IC, COLLECTOR CURRENT (mA)  
Fig. 2 VCE(SAT) vs. IC  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Derating Curve  
1000  
12  
10  
VCE = 10  
IE = 0V  
75°C  
-25°C  
25°C  
8
6
4
2
0
100  
10  
1
0
10  
15  
30  
25  
5
20  
1
10  
100  
VR, REVERSE BIAS VOLTAGE (V)  
Fig. 4 Output Capacitance  
IC, COLLECTOR CURRENT (mA)  
Fig. 3 DC Current Gain  
10  
100  
75°C  
VO = 0.2  
25°C  
10  
-25°C  
-25°C  
1
75°C  
1
0.1  
0.01  
25°C  
0.001  
1
6
7
8
9
0
1
2
3
4
5
10  
0
10  
20  
30  
40  
50  
Vin, INPUT VOLTAGE (V)  
Fig. 5 Collector Current Vs. Input Voltage  
IC, COLLECTOR CURRENT (mA)  
Fig. 6 Input Voltage vs. Collector Current  
DS30346 Rev. 2 - 2  
5 of 5  
DDA (xxxx) U  

相关型号：

DDA114TU-13

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
DIODES

DDA114TU-7

 PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114TU-7-F

 PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114TUQ-13-F

 Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon
DIODES

DDA114TUQ-7-F

 Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon
DIODES

DDA114YH

 PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114YH-7

 PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114YK

 PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114YK-7

 PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114YK-7-F

 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
DIODES

DDA114YU

 PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DDA114YU-13

 Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6
DIODES
©2020 ICPDF网 联系我们和版权申明