BZV63-39 [DIODES]
Zener Diode, HERMETIC SEALED PACKAGE-1;型号: | BZV63-39 |
厂家: | DIODES INCORPORATED |
描述: | Zener Diode, HERMETIC SEALED PACKAGE-1 二极管 |
文件: | 总4页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZV63 / BZV64
Silicon Power Zener Diode
Part no.
Description
The BZV63/62 are hermetically sealed 50A-
forward current diodes, which are available in
different Zener voltages.
Features
Applications
Forward current 50A
Power supplies
Zener voltages 22V, 27V, 33V or 39V
Hermetic press-fit package
Available in different package modifications
Rectifier diode in car alternators
Pinout details
Typical application circuit
exciting current
Alternator
BZV63: 1 - cathode
1
2 - anode
BZV64: 1 - anode
2
2 - cathode
+
-
3 x BZV63
3x BZV64
Ordering information
Device
Quantity per box
Options
BZV63-22; …; BZV63-39
BZV64-22; …; BZV64-39
500
500
The package quantities for the different package
modifications are included in
“HermeticPressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BZV63- black, BZV64 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BZV63………………………………... diode type
22………………………….……….. Zener voltage VZ (in V) 22
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© Zetex Semiconductors plc 2007
BZV63 / BZV64
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
BZV63-22 BZV64-22
BZV63-27 BZV64-27
BZV63-33 BZV64-33
BZV63-39 BZV64-39
8.1
6.6
5.5
4.8
Z-current
(continuous)
IZ
A
Tc = 25°C
sinusoidal,
f = 15 - 1000 Hz
TJ = 25°C,
half-sine wave,
10 ms
TJ = 175°C,
half-sine wave,
10 ms
TJ = 25°C,
half-sine wave,
10 ms
TJ = 175°C,
half-sine wave,
10 ms
Mean forward current
Surge forward current
IF(AV)
50
A
A
700
IFSM
550
2450
1500
Maximum rated value
A²s
i²dt
Repetitive peak forward current
Effective forward current
157
78
A
A
f = 15 - 1000 Hz
IFRM= *IF(AV)
IF(RMS)
TJmax
Tstg
sinusoidal,
f = 15 - 1000 Hz
Junction temperature
175
°C
°C
Storage temperature range
- 50 to + 150
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to case
RθJC
0.8
°C/W
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© Zetex Semiconductors plc 2007
BZV63 / BZV64
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
20.8
25.1
31
Typ.
22
Max.
23.3
28.9
35
Unit Test contitions
BZV63-22 BZV64-22
BZV63-27 BZV64-27
BZV63-33 BZV64-33
BZV63-39 BZV64-39
27
Z-voltage
VZ
V
at IZ = 100mA
33
37
39
41
IF = 35 A,
measuring time
1ms
Forward voltage
Reverse current
VF
IR
-
-
1.0
-
1.1
V
200
µA
at VZ –5V
BZV63-22 BZV64-22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
3.5
5
BZV63-27 BZV64-27
BZV63-33 BZV64-33
BZV63-39 BZV64-39
BZV63-22 BZV64-22
BZV63-27 BZV64-27
BZV63-33 BZV64-33
BZV63-39 BZV64-39
BZV63-22 BZV64-22
BZV63-27 BZV64-27
BZV63-33 BZV64-33
BZV63-39 BZV64-39
Dynamical
resistance
rZ
rZ
rZ
Ω
at IZ = 100mA
6
200
350
500
700
20
Dynamical
resistance
(information
value)
mΩ at IZ = 1A
Dynamical
resistance
(information
value)
35
mΩ at IZ = 10A
50
80
Issue 1 – August 2007
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© Zetex Semiconductors plc 2007
BZV63 / BZV64
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
Millimeters
TYP
Inches
TYP
MIN
15,00
5,90
MAX
16,00
6,30
MIN
MAX
0,630
0,248
0,098
0,161
0,626
0,506
0,500
0,157
A
15,50
6,10
2,30
0,591
0,232
0,083
0,138
0,610
0,502
0,484
0,118
0,610
0,240
0,091
0,150
0,618
0,504
0,492
0,138
A1
A2
b
2,10
2,50
3,50
3,80
4,10
D
15,50
12,75
12,30
3,00
15,70
12,80
12,50
3,50
15,90
12,85
12,70
4,00
D1
D2
L
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Telephone (44) 161 622 4444
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hq@zetex.com
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Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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© Zetex Semiconductors plc 2007
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