BSS123Q-7-F [DIODES]
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3;
| 型号： | BSS123Q-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 2)
ID
V(BR)DSS
RDS(ON)
TA = 25°C
100V
0.17
6.0Ω @ VGS = 10V
Description and Applications
Mechanical Data
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as
•
•
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
•
•
•
•
•
Small servo motor control
Power MOSFET gate drivers
Switching applications
•
•
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
G
S
Source
Equivalent Circuit
Top View
Top View
Ordering Information (Note 3)
Part Number
BSS123-7-F
BSS123Q-7-F
BSS123-13-F
BSS123Q-13-F
Qualification
Commercial
Automotive
Commercial
Automotive
Case
Packaging
SOT23
SOT23
SOT23
SOT23
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
10000 / Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2 O 3 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
K23
M = Month (ex: 9 = September)
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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September 2011
© Diodes Incorporated
BSS123
Document number: DS30366 Rev. 12 - 2
BSS123
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 20Kꢀ
Symbol
VDSS
VDGR
VGSS
ID
Value
100
100
Unit
V
V
Gate-Source Voltage
Continuous
±20
V
170
680
Continuous Drain Current (Note 4) VGS = 10V
Continuous
Pulsed
mA
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Max
300
Unit
mW
°C/W
°C
417
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
100
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 20V, VGS = 0V
VGS = 20V, VDS = 0V
-
-
-
0.1
10
50
μA
nA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage , Forward
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
IGSSF
0.8
1.4
-
2.0
6.0
10
-
V
VGS(th)
VDS = VGS, ID = 1mA
VGS = 10V, ID = 0.17A
-
-
Ω
Static Drain-Source On-Resistance
RDS (ON)
-
V
V
GS = 4.5V, ID = 0.17A
DS =10V, ID = 0.17A, f = 1.0KHz
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
gFS
80
-
370
0.84
mS
V
1.3
VSD
VGS = 0V, IS = 0.34A,
-
-
-
29
10
2
60
15
6
Ciss
Coss
Crss
Output Capacitance
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
-
-
-
-
-
-
-
-
8
8
ns
ns
ns
ns
tD(on)
tr
tD(off)
tf
Turn-On Rise Time
V
GS = 10V, VDD = 30V,
ID = 0.28A, RGEN = 50ꢀ
Turn-Off Delay Time
13
16
Turn-Off Fall Time
Notes:
4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
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September 2011
© Diodes Incorporated
BSS123
Document number: DS30366 Rev. 12 - 2
BSS123
0.7
0.6
2.4
2.0
0.5
0.4
0.3
0.2
1.6
1.2
0.8
0.1
0
5
1
2
3
4
0.1
0.2
0.3
0.4
0.5
0.6
0
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
2.2
1.2
1.1
V
I
= 10V
V
I
= V
GS
= 250µA
GS
DS
2
= 170m
D
D
1.8
1.6
1.4
1
1.2
1
0.9
0.8
0.6
0.4
0.8
0.7
0
25
50
125 150
-50 -25
75 100
-25
TJ, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
25
75 100 125 150
-50
0
50
TJ, JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
50
40
30
C
iss
20
C
oss
10
0
C
rss
20
0
5
10
15
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
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September 2011
© Diodes Incorporated
BSS123
Document number: DS30366 Rev. 12 - 2
BSS123
Package Outline Dimensions
A
SOT23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
H
G
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
M
K
J
K1
D
K1
L
M
-
F
L
0.45
0.085 0.18
0° 8°
0.61
α
All Dimensions in mm
Suggested Pad Layout
Dimensions Value (in mm)
Y
Z
X
Y
C
E
2.9
0.8
0.9
2.0
Z
C
1.35
E
X
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September 2011
© Diodes Incorporated
BSS123
Document number: DS30366 Rev. 12 - 2
BSS123
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
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© Diodes Incorporated
BSS123
Document number: DS30366 Rev. 12 - 2
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