BCX5510TA [DIODES]
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89; 在SOT89 NPN硅平面中功率晶体管
| 型号： | BCX5510TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX 54 / 55 / 56
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
Features
Mechanical Data
•
•
Case: SOT89
Case Material: Molded Plastic, “Green” Molding
Compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
•
•
•
•
•
•
•
•
Ic = 1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary PNP types: BCX51, 52 and 53
Lead-Free, RoHS Compliant (Note 1)
•
•
•
•
Halogen and Antimony Free. “Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.072 grams (Approximate)
Applications
•
•
Medium Power Switching or Amplification Applications
AF driver and output stages
SOT89
C
E
E
C
B
B
C
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Note 3)
Product
BCX54TA
BCX5410TA
BCX5416TA
BCX55TA
BCX5510TA
BCX5516TA
BCX56TA
BCX5610TA
BCX5616TA
BCX5316TC
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
BA
BC
BD
BE
BG
BM
BH
BK
BL
7
7
7
7
7
7
7
7
7
12
12
12
12
12
12
12
12
12
12
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
BL
13
4,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
xx = Product Type Marking Code, as follows:
BCX54 = BA
BCX5410 = BC
BCX5416 = BD
BCX55 = BE
BCX5510 = BG
BCX5516 = BM
BCX56 = BH
BCX5610 = BK
BCX5616 = BL
xx
1 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
BCX54
45
BCX55
60
BCX56
100
80
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
45
60
V
5
V
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
1
A
1.5
100
200
ICM
IB
mA
IBM
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation (Note 4)
PD
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
124
RθJA
RθJL
°C/W
°C/W
°C
10.0
-65 to +150
T
J, TSTG
Notes:
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
2 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
Thermal Characteristics
120
25mm x 25mm 1oz Cu
25mm x 25mm 1oz Cu
T
= 25°C
T
= 25°C
amb
amb
D=0.5
D=0.2
100
10
1
100
80
60
40
20
0
Single pulse
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
1.0
25mm x 25mm 1oz Cu
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
3 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
45
60
100
45
60
80
5
Typ
Max
Unit
Test Condition
BCX54
BCX55
BCX56
BCX54
BCX55
BCX56
Collector-Base
-
-
V
BVCBO
IC = 100µA
Breakdown Voltage
Collector-Emitter
-
-
-
V
BVCEO
IC = 10mA
IE = 10µA
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
-
-
-
V
BVEBO
ICBO
V
V
CB = 30V
CB = 30V, TA = 150°C
0.1
20
-
µA
nA
-
20
IEBO
VEB = 4V
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
25
40
25
-
250
-
-
-
-
All versions
Static Forward Current Transfer
Ratio (Note 6)
IC = 500mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 150mA, VCE = 2V
hFE
10 gain grp
16 gain grp
63
100
-
-
-
-
160
250
0.5
Collector-Emitter Saturation Voltage (Note 6)
V
V
VCE(sat)
VBE(on)
IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage (Note 6)
-
-
1.0
IC = 500mA, VCE = 2V
IC = 50mA, VCE = 10V
f = 100MHz
Transition Frequency
Output Capacitance
fT
150
-
-
-
-
MHz
pF
Cobo
25
V
CB = 10V, f = 1MHz
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0.8
250
200
150
100
0.6
0.4
0.2
0
50
0
0
1
2
3
4
5
0.001
0.01
IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.1
1
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
4 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
1.2
1.0
0.4
0.3
0.8
0.6
0.4
0.2
0.1
0.2
0
0
0.0001 0.001
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
140
120
100
80
0.8
0.6
0.4
0.2
0
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
300
250
200
150
100
V
= 5V
CE
50
0
f = 100MHz
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
5 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
Package Outline Dimensions
D1
C
SOT89
Min
Dim
A
B
B1
C
D
Max
1.40
0.44
0.35
0.35
4.40
1.52
2.29
1.60
0.62
0.54
0.43
4.60
1.83
2.60
E
H
L
B
D1
E
e
B1
e1
E
e1
H
1.50 Typ
3.00 Typ
3.94
0.89
4.25
1.20
A
L
All Dimensions in mm
D
Suggested Pad Layout
X1
Dimensions Value (in mm)
X
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
X1
X2
Y
Y1
Y2
Y3
Y4
C
X2 (2x)
Y1
Y3
Y4
Y2
C
Y
X (3x)
6 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
BCX 54 / 55 / 56
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
7 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 54 / 55 / 56
Datasheet Number: DS35369 Rev. 2 – 2
相关型号：
BCX5516E6433HTMA1
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
BCX55BF
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3
NEC
BCX55BG
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3
NEC
BCX55E6327HTSA1
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
BCX55E6433
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
INFINEON
BCX55LEADFREE
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CENTRAL
©2020 ICPDF网 联系我们和版权申明