BC857TA [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | BC857TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon 晶体 晶体管 |
| 文件： | 总4页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
BC856A - BC858C
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
•
•
•
•
Ideally Suited for Automatic Insertion
Complementary NPN Types Available (BC846-BC848)
For Switching and AF Amplifier Applications
SOT-23
Min
Dim
A
B
C
D
E
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Lead Free/RoHS Compliant (Note 3)
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Mechanical Data
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Pin Connections: See Diagram
Marking Codes: See Table Below & Diagram on Page 4
Ordering & Date Code Information: See Page 4
•
•
•
G
H
J
•
•
•
•
K
L
M
α
Weight: 0.008 grams (approximate)
All Dimensions in mm
Marking Code (Note 2)
Type
Marking
3A, K3A
Type
Marking
3G, K3G
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
3B, K3B
3J, K3J, K3A, K3V
3K, K3K, K3B, K3W
3L, K3L, K3G
3E, K3V, K3A
3F, K3W, K3B
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
BC856
BC857
BC858
-80
-50
-30
VCBO
V
BC856
BC857
BC858
-65
-45
-30
VCEO
V
Emitter-Base Voltage
VEBO
IC
-5.0
-100
V
mA
mA
mA
mW
°C/W
°C
Collector Current
Peak Collector Current
ICM
-200
Peak Emitter Current
IEM
-200
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Pd
300
417
RθJA
Tj, TSTG
-65 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856.
3. No purposefully added lead.
DS11207 Rev. 18 - 2
1 of 4
BC856A-BC858C
© Diodes Incorporated
www.diodes.com
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
IC = 10μA, IB = 0
Collector-Base Breakdown Voltage (Note 4)
BC856
BC857
BC858
-80
-50
-30
—
—
—
—
—
—
V(BR)CBO
V
Collector-Emitter Breakdown Voltage (Note 4)
BC856
BC857
BC858
-65
-45
-30
—
—
—
—
—
—
V(BR)CEO
V(BR)EBO
V
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 4)
H-Parameters
-5
—
—
IE = 1μA, IC = 0
—
—
—
kΩ
kΩ
kΩ
µS
µS
µS
—
Small Signal Current Gain
Current Gain Group A
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
—
—
—
—
—
—
—
—
—
—
—
—
200
330
600
2.7
4.5
—
—
—
—
—
—
—
—
—
—
—
—
B
C
Input Impedance
Current Gain Group A
B
C
VCE = -5.0V, IC = -2.0mA,
f = 1.0kHz
8.7
18
30
60
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
1.5x10-4
2x10-4
3x10-4
B
C
—
—
DC Current Gain (Note 4)
Current Gain Group A
125
220
420
180
290
520
250
475
800
B
C
hFE
—
VCE = -5.0V, IC = -2.0mA
-75
-250
-300
-650
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
VCE(SAT)
VBE(SAT)
VBE(ON)
—
mV
mV
mV
—
—
-700
-850
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
-600
—
-650
—
-750
-820
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
BC856
BC857
BC858
ICES
ICES
ICES
ICBO
ICBO
—
—
—
—
—
—
—
—
—
—
-15
-15
-15
-15
-4.0
nA
nA
nA
nA
µA
VCE = -80V
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
fT
100
—
200
3
—
—
10
MHz
pF
CCBO
NF
VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
RS = 2kΩ, f = 1kHz, Δf = 200Hz
—
2
dB
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 18 - 2
2 of 4
www.diodes.com
BC856A-BC858C
© Diodes Incorporated
DS11207 Rev. 18 - 2
3 of 4
BC856A-BC858C
© Diodes Incorporated
www.diodes.com
Ordering Information (Note 5)
Packaging
Shipping
Device*
SOT-23
3000/Tape & Reel
BC85xx-7-F
*
xx = device type, e.g. BC856A-7-F.
Notes:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856A
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
2005 2006 2007 2008 2009 2010 2011 2012
Year
1998 1999 2000 2001 2002 2003 2004
S
T
U
V
W
X
Y
Z
Code
J
K
L
M
N
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS11207 Rev. 18 - 2
4 of 4
BC856A-BC858C
© Diodes Incorporated
www.diodes.com
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