BC817-40TA [DIODES]

500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN;
BC817-40TA
型号: BC817-40TA
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN

晶体 晶体管
文件: 总3页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC817-16 / -25 / -40  
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
·
Ideally Suited for Automatic Insertion  
Epitaxial Planar Die Construction  
For Switching, AF Driver and Amplifier  
Applications  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
A
B
C
·
Complementary PNP Types Available (BC807)  
C
B
C
Mechanical Data  
D
TOP VIEW  
B
E
E
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202, Method  
208  
D
G
E
G
H
H
K
·
·
M
J
J
L
K
L
·
·
Pin Connections: See Diagram  
M
Marking (See Page 3): BC817-16 6A, K6A  
BC817-25 6B, K6B  
a
BC817-40 6C, K6C  
All Dimensions in mm  
·
·
Ordering & Date Code Information: See Page 3  
Approx. Weight: 0.008 grams  
@TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCEO  
VEBO  
IC  
Value  
45  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
5.0  
V
800  
mA  
mA  
mA  
mW  
°C/W  
°C/W  
°C  
ICM  
Peak Collector Current  
Peak Emitter Current  
1000  
1000  
310  
IEM  
Power Dissipation at TSB = 50°C (Note 1)  
Pd  
RqSB  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Substrate Backside (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
320  
403  
-65 to +150  
@TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
DC Current Gain  
Current Gain Group -16  
VCE = 1.0V, IC = 100mA  
100  
160  
250  
60  
100  
170  
250  
400  
600  
-25  
-40  
hFE  
Current Gain Group -16  
VCE = 1.0V, IC = 300mA  
-25  
-40  
IC = 500mA, IB = 50mA  
VCE = 1.0V, IC = 300mA  
VCE(SAT)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
0.7  
1.2  
V
V
VCE = 45V  
100  
5.0  
nA  
µA  
ICES  
IEBO  
fT  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
VCE = 25V, Tj = 150°C  
VEB = 4.0V  
100  
nA  
MHz  
pF  
V
CE = 5.0V, IC = 10mA,  
100  
f = 50MHz  
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
12  
2
Notes:  
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.  
2. Short duration pulse test used to minimize self-heating effect.  
DS11107 Rev. 9 - 2  
1 of 3  
BC817-16/-25/-40  
400  
1000  
See Note 1  
TA = 25°C  
f = 20MHz  
300  
200  
100  
0
VCE = 5V  
1V  
100  
10  
1
10  
100  
1000  
0
100  
200  
IC, COLLECTOR CURRENT (mA)  
Fig. 2, Gain-Bandwidth Product vs Collector Current  
TSB, SUBSTRATE TEMPERATURE (°C)  
Fig. 1, Power Derating Curve  
0.5  
0.4  
0.3  
1000  
100  
10  
VCE = 1V  
typical  
limits  
at TA = 25°C  
IC / IB = 10  
150°C  
TA = 25°C  
-50°C  
0.2  
0.1  
25°C  
-50°C  
150°C  
0
0.1  
100  
100  
1000  
0.1  
1000  
1
10  
1
10  
IC, COLLECTOR CURRENT (mA)  
Fig. 3, Collector Sat. Voltage vs Collector Current  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, DC Current Gain vs Collector Current  
500  
400  
300  
100  
80  
3.2  
2.8  
0.35  
2.4  
0.3  
2
1.8  
1.6  
1.4  
0.25  
60  
40  
0.2  
1.2  
0.8  
0.15  
200  
100  
0
0.6  
0.4  
0.1  
20  
0
IB = 0.05mA  
IB = 0.2mA  
0
10  
20  
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 5, Typical Emitter-Collector Characteristics  
VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 6, Typical Emitter-Collector Characteristics  
DS11107 Rev. 9 - 2  
2 of 3  
BC817-16/-25/-40  
(Note 3)  
Ordering Information  
Device*  
Packaging  
Shipping  
BC817-xx-7  
SOT-23  
3000/Tape & Reel  
Notes:  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
* xx = gain group, e.g. BC817-16-7.  
Marking Information  
XXX = Product Type Marking Code (See Page 1), e.g. K6A = BC817-16  
YM = Date Code Marking  
Y = Year ex: N = 2002  
M = Month ex: 9 = September  
XXX  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
Code  
J
K
L
M
N
P
R
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS11107 Rev. 9 - 2  
3 of 3  
BC817-16/-25/-40  

相关型号:

BC817-40TRL

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BC817-40TRL13

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BC817-40W

NPN general purpose transistor
NXP

BC817-40W

NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
INFINEON

BC817-40W

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
DIODES

BC817-40W

NPN Plastic Encapsulate Transistor
SECOS

BC817-40W

High current. Low voltage. Collector-base voltage VCBO 50 V
TYSEMI

BC817-40W

Transistor
PHILIPS

BC817-40W

General Purpose NPN Transistor
ONSEMI

BC817-40W

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40W,115

TRANS NPN 45V 0.5A SOT323
ETC

BC817-40W,135

TRANS NPN 45V 0.5A SOT323
ETC