BC817-40TA [DIODES]
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN;![BC817-40TA](http://pdffile.icpdf.com/pdf1/p00073/img/icpdf/BC817_382023_icpdf.jpg)
型号: | BC817-40TA |
厂家: | ![]() |
描述: | 500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN 晶体 晶体管 |
文件: | 总3页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier
Applications
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.85
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.80
8°
A
B
C
·
Complementary PNP Types Available (BC807)
C
B
C
Mechanical Data
D
TOP VIEW
B
E
E
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
D
G
E
G
H
H
K
·
·
M
J
J
L
K
L
·
·
Pin Connections: See Diagram
M
Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
a
BC817-40 6C, K6C
All Dimensions in mm
·
·
Ordering & Date Code Information: See Page 3
Approx. Weight: 0.008 grams
@TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCEO
VEBO
IC
Value
45
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
5.0
V
800
mA
mA
mA
mW
°C/W
°C/W
°C
ICM
Peak Collector Current
Peak Emitter Current
1000
1000
310
IEM
Power Dissipation at TSB = 50°C (Note 1)
Pd
RqSB
RqJA
Tj, TSTG
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
320
403
-65 to +150
@TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic (Note 2)
Symbol
Min
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
VCE = 1.0V, IC = 100mA
100
160
250
60
100
170
250
400
600
—
-25
-40
hFE
—
Current Gain Group -16
VCE = 1.0V, IC = 300mA
-25
-40
—
—
IC = 500mA, IB = 50mA
VCE = 1.0V, IC = 300mA
VCE(SAT)
VBE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
—
—
0.7
1.2
V
V
VCE = 45V
100
5.0
nA
µA
ICES
IEBO
fT
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
—
—
VCE = 25V, Tj = 150°C
VEB = 4.0V
100
—
nA
MHz
pF
V
CE = 5.0V, IC = 10mA,
100
—
f = 50MHz
VCB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
12
2
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.
2. Short duration pulse test used to minimize self-heating effect.
DS11107 Rev. 9 - 2
1 of 3
BC817-16/-25/-40
400
1000
See Note 1
TA = 25°C
f = 20MHz
300
200
100
0
VCE = 5V
1V
100
10
1
10
100
1000
0
100
200
IC, COLLECTOR CURRENT (mA)
Fig. 2, Gain-Bandwidth Product vs Collector Current
TSB, SUBSTRATE TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
0.4
0.3
1000
100
10
VCE = 1V
typical
limits
at TA = 25°C
IC / IB = 10
150°C
TA = 25°C
-50°C
0.2
0.1
25°C
-50°C
150°C
0
0.1
100
100
1000
0.1
1000
1
10
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 4, DC Current Gain vs Collector Current
500
400
300
100
80
3.2
2.8
0.35
2.4
0.3
2
1.8
1.6
1.4
0.25
60
40
0.2
1.2
0.8
0.15
200
100
0
0.6
0.4
0.1
20
0
IB = 0.05mA
IB = 0.2mA
0
10
20
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5, Typical Emitter-Collector Characteristics
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6, Typical Emitter-Collector Characteristics
DS11107 Rev. 9 - 2
2 of 3
BC817-16/-25/-40
(Note 3)
Ordering Information
Device*
Packaging
Shipping
BC817-xx-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
* xx = gain group, e.g. BC817-16-7.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K6A = BC817-16
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS11107 Rev. 9 - 2
3 of 3
BC817-16/-25/-40
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