B340LA-7 [DIODES]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, PLASTIC, SMA, 2 PIN;
| 型号： | B340LA-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, PLASTIC, SMA, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B340LA/B
3.0A LOW VF SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: B340LA B340LB
Features
·
·
Very Low Forward Voltage Drop
Guard Ring Die Construction for Transient
Protection
·
·
·
·
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 70A Peak
Plastic Material - UL Flammability
Classification 94V-0
SMA
Min
SMB
Min
B
Dim
A
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
A
J
C
D
B
C
D
E
Mechanical Data
G
H
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
G
H
J
E
All Dimensions in mm
·
·
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
“A” Suffix Designates SMA Package
“B” Suffix Designates SMB Package
SMB 0.093 grams
·
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load unless otherwise noted.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B340LA/B
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
VR(RMS)
IO
RMS Reverse Voltage
28
V
A
Average Rectified Output Current (Note 1)
TL = 90°C
3.0
Non-Repetitive Peak Forward Surge Current, single
sine-wave superimposed on rated load, 60Hz
IFSM
70
A
Tj, TSTG
Operating and Storage Temperature Range
-40 to +125
°C
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ Max Unit
Conditions
V(BR)R
IR = 2.0mA
Reverse Breakdown Voltage (Note 2)
40
¾
¾
¾
IF = 1.0A
IF = 3.0A
¾
¾
0.310 0.350
VFM
Forward Voltage Drop (Note 2)
V
¾
0.450
VR = 15V
¾
150
uA
mA
IRM
Leakage Current (Note 2)
V
R = 20V
¾
¾
¾
1.0
2.0
VR = 40V
Cj
f = 1MHz, VR = 4.0VDC
Mounted on alumina substrate
Typical Junction Capacitance
¾
¾
180
25
¾
¾
pF
RqJT
Typical Thermal Resistance, Junction to Terminal
°C/W
Notes:
1. When mounted on alumina substrate, 180° half sine wave.
2. Short duration test pulse used to minimize self-heating effect.
DS30240 Rev. B-2
1 of 2
www.diodes.com
B340LA/B
ã Diodes Incorporated
100
10
3.0
2.5
2.0
1.5
TA = 125ºC
1.0
1.0
TA = 25ºC
0.5
0
TA = 100ºC
0.1
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
100
Tj = 25°C
f = 1 MHz
Single Half-Sine-Wave
(JEDEC Method)
80
60
40
20
TT = 100°C
100
10
0
0.1
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1000
100
TA = 125ºC
10
TA = 100ºC
1.0
TA = 25ºC
0.1
0.01
0
10
20
30
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 5 Typical Reverse Characteristics
DS30240 Rev. B-2
2 of 2
B340LA/B
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DIODES
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