B150 [DIODES]
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 1.0A表面贴装肖特基整流器
| 型号： | B150 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B120/B - B160/B
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
Guard Ring Die Construction for
Transient Protection
·
·
·
·
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
SMA
Min
SMB
Min
B
Dim
A
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
B
A
J
C
D
C
D
·
Plastic Material - UL Flammability
Classification 94V-0
E
G
H
J
G
H
All Dimensions in mm
E
Mechanical Data
·
·
Case: Molded Plastic
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
·
·
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
SMB 0.093 grams
·
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B120/B
20
B130/B
30
B140/B
B150/B
50
B160/B
60
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
40
V
VR(RMS)
IO
RMS Reverse Voltage
14
21
28
35
42
V
A
Average Rectified Output Current
@ TT = 130°C
1.0
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30
A
Forward Voltage
@ IF = 1.0A
VFM
IRM
0.50
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TA = 25°C
@ TA = 100°C
0.5
10
mA
Cj
Typical Junction Capacitance (Note 2)
110
20
pF
°C/W
°C
RqJT
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS13002 Rev. H-2
1 of 3
B120/B-B160/B
10
TA = +125°C
1.0
TA = +75°C
TA = +25°C
TA = -25°C
1.0
0.5
IF Pulse Width = 300ms
0
0.1
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
TT, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
Fig. 2 Typical Forward Characteristics - B120/B thru B140/B
10
40
Single Half Sine-Wave
(JEDEC Method)
30
1.0
TA = +125ºC
20
10
TA = +25ºC
0.1
Tj = 150ºC
IF Pulse Width = 300 ms
0
0.01
1
100
10
0.8
VF, INSTANTANEOUS FWD VOLTAGE (V)
1.0
0
0.2
0.4
0.6
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
1000
10,000
Tj = 25°C
f = 1 MHz
1000
100
10
TA = +125°C
TA = +75°C
100
TA = +25°C
1
0.1
TA = -25°C
10
0.01
0.1
1
10
100
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B
DS13002 Rev. H-2
2 of 3
B120/B-B160/B
10,000
1000
TA = +125°C
100
TA = +70°C
10
1
TA = +25°C
0.1
70
30
40
50
60
0
10
20
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 7 Typical Reverse Characteristics, B150/B thru B160/B
DS13002 Rev. H-2
3 of 3
B120/B-B160/B
相关型号：
B150-E3
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
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