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2N7002E-7 [DIODES]

Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3;
2N7002E-7
型号： 2N7002E-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3

开关 光电二极管 晶体管
文件： 总3页 (文件大小：72K)
中文：  中文翻译
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SPICE MODEL: 2N7002E  
2N7002E  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
Low On-Resistance: RDS(ON)  
SOT-23  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
D
B
Low Input/Output Leakage  
B
C
C
Available in Lead Free/RoHS Compliant Version  
(Note 2)  
D
TOP VIEW  
G
S
D
G
E
E
Mechanical Data  
G
H
H
·
·
·
·
·
Case: SOT-23  
K
Case Material: UL Flammability Classification Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
M
J
J
L
K
Also Available in Lead Free Plating (Matte Tin  
Finish annealed over Alloy 42 leadframe). Please see  
Ordering Information, Note 5, on Page 2  
L
M
a
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 2): K7B  
All Dimensions in mm  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Symbol  
Maximum Ratings  
Characteristic  
Value  
60  
Units  
VDSS  
VDGR  
V
V
Drain-Source Voltage  
60  
Drain-Gate Voltage RGS £ 1.0MW  
Gate-Source Voltage  
Continuous  
Pulsed  
20  
40  
VGSS  
V
ID  
Pd  
mA  
mW  
°C/W  
°C  
Drain Current  
Continuous  
240  
300  
Total Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
RqJA  
Tj, TSTG  
417  
-55 to +150  
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30376 Rev. 4 - 2  
1 of 3  
2N7002E  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
VGS = 0V, ID = 10mA  
60  
¾
¾
70  
¾
¾
¾
V
@ TC  
@ TC = 125°C  
= 25°C  
1.0  
500  
VDS = 60V, VGS = 0V  
µA  
nA  
VGS  
= 15V, VDS = 0V  
IGSS  
Gate-Body Leakage  
10  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
VGS(th)  
V
DS = VGS, ID = 250mA  
1.0  
¾
2.5  
V
VGS = 10V, ID = 250mA  
VGS = 4.5V, ID = 200mA  
¾
¾
1.6  
2.0  
3
4
Static Drain-Source On-Resistance  
@ Tj = 25°C  
RDS (ON)  
W
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
ID(ON)  
gFS  
On-State Drain Current  
0.8  
80  
1.0  
¾
¾
A
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
¾
mS  
Ciss  
Coss  
Crss  
¾
¾
¾
22  
11  
50  
25  
pF  
pF  
pF  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
2.0  
5.0  
V
DD = 30V, ID = 0.2A,  
tD(ON)  
¾
¾
7.0  
11  
20  
20  
ns  
ns  
RL = 150W, VGEN = 10V,  
tD(OFF)  
Turn-Off Delay Time  
RGEN = 25W  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
2N7002E-7  
SOT-23  
3000/Tape & Reel  
Notes:  
3. Short duration test pulse used to minimize self-heating effect.  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.  
Example: 2N7002E-7-F.  
Marking Information  
K7B = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: P = 2003  
M = Month ex: 9 = September  
K7B  
Date Code Key  
Year  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30376 Rev. 4 - 2  
2 of 3  
2N7002E  
www.diodes.com  
1.0  
2.0  
1.6  
1.2  
0.8  
0.4  
0
VGS = 10V  
10V  
9.0V  
8.0V  
7.0V  
6.5V  
6.0V  
5.5V  
5.0V  
4.5V  
4.0V  
3.5V  
3.0V  
2.5V  
2.1V  
TA = -55°C  
0.8  
0.6  
5.5V  
5.0V  
TA = 25°C  
TA = 125°C  
0.4  
0.2  
0
2.1V  
3
4
0
1
2
5
6
7
3
0
1
2
4
5
VGS, GATE TO SOURCE VOLTAGE (V)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 On-Region Characteristics  
Fig. 2 Drain Current vs. Gate-Source Voltage  
5
4
5
4
3
2
1
0
3
2
1
VGS = 4.5V  
ID = 250mA  
ID = 75mA  
VGS = 10V  
0
0
2
4
6
8
10  
0
0.2  
0.6  
0.8  
1.0  
0.4  
VGS - GATE TO SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 3 On Resistance vs.  
Gate to Source Voltage  
Fig. 4 On Resistance vs.  
Drain Current  
5
350  
300  
250  
4
3
2
200  
150  
VGS= 4.5V @ 200mA  
100  
VGS= 10V @ 250mA  
1
0
50  
0
200  
0
175  
25  
50  
150  
100 125  
75  
-75  
50 75  
150  
0
25  
125  
100  
-50 -25  
TA, AMBIENT TEMPERATURE (°C)  
TJ, JUNCTION TEMPERATURE (°C)  
Fig. 5 On-Resistance vs. Junction Temperature  
Fig. 6, Max Power Dissipation vs  
Ambient Temperature  
DS30376 Rev. 4 - 2  
3 of 3  
www.diodes.com  
2N7002E  

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