1N5818M [DIODES]
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 1.0A表面贴装肖特基整流器
| 型号： | 1N5818M |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5817M / 1N5818M / 1N5819M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
Features
·
·
·
·
·
High Current Capability
Low Forward Voltage Drop
Guard Ring for Transient Protection
Glass Package for High Reliability
Packaged for Surface Mount Applications
A
B
C
Mechanical Data
MELF
Min
Dim
A
Max
5.20
2.60
·
·
Case: MELF, Glass
Terminals: Solderable per MIL-STD-202,
4.80
2.40
Method 208
B
·
·
·
Polarity: Cathode band
Approx Weight: 0.25 gram
Mounting Position: Any
C
0.55 Nominal
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Characteristic
Symbol
1N5817M
1N5818M
1N5819M
Units
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
14
30
40
28
V
VR(RMS)
IO
RMS Reverse Voltage
21
V
A
Maximum Average Forward Rectified Current
1.0
@TT = 90°C (Note 1)
Maximum Forward Surge Current. Half Cycle @60Hz
Superimposed on rated load, JEDEC Method
IFSM
VF
25
A
V
Maximum Forward Voltage Drop
@ IF = 1.0A
@ IF = 3.0A
0.450
0.750
0.550
0.875
0.600
0.900
Maximum Reverse Leakage Current @ VRRM
@ TA = 25°C
@ TA = 100°C
1.0
10
IR
mA
RqJA
Cj
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
130
110
K/W
pF
Tj, TSTG
-60 to +125
°C
Storage and Operating Temperature Range
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at VR = 4.0V, f = 1.0MHz.
DS13001 Rev. D-2
1 of 2
1N5817M/1N5818M/1N5819M
1.0
0.8
0.6
0.4
0.2
0
30
10
1N5817M
1N5819M
Note 1
1N5818M
1.0
TJ = 25°C
Pulse Width = 300 ms
2% Duty Cycle
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0.1
0
0.5
1.0
1.5
2.0
2.5
10
40
60
80
100 120 140 150
TT, TERMINAL TEMPERATURE (°C)
Fig. 1, Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2, Typical Forward Characteristics
25
1000
TJ = 25°C
20
15
100
10
5
0
8.3ms Single Half Sine-Wave
JEDEC Method
10
10
0.1
1.0
10
100
100
1
NUMBER OF CYCLES AT 60 Hz
Fig. 4, Maximum Non-Repetitive Peak Fwd Surge Current
VR, REVERSE VOLTAGE (V)
Fig. 3, Typical Junction Capacitance
DS13001 Rev. D-2
2 of 2
1N5817M/1N5818M/1N5819M
相关型号：
1N5818RL
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PLASTIC, 59-04, 2 PIN
MOTOROLA
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