1N5818-13 [DIODES]
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;
| 型号： | 1N5818-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: 1N5817 1N5818 1N5819
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
A
B
A
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
C
·
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
D
DO-41 Plastic
Min
Dim
A
Max
25.40
4.06
¾
Mechanical Data
B
5.21
0.864
2.72
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
C
0.71
D
2.00
·
·
·
·
Polarity: Cathode Band
Weight: 0.3 grams (approx)
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N5817
1N5818
1N5819
40
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
14
30
V
VR(RMS)
IO
RMS Reverse Voltage
21
28
V
A
Average Rectified Output Current
(Note 1)
1.0
@ TL = 90°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
25
A
V
Forward Voltage (Note 2)
@ IF = 1.0A
@ IF = 3.0A
0.450
0.750
0.550
0.875
0.60
0.90
VFM
IRM
Peak Reverse Leakage Current
at Rated DC Blocking Voltage (Note 2)
@TA = 25°C
@ TA = 100°C
1.0
10
mA
pF
CT
RqJL
Typical Total Capacitance (Note 3)
110
15
Typical Thermal Resistance Junction to Lead (Note 4)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RqJA
50
Tj, TSTG
-65 to +125
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
DS23001 Rev. 6 - 2
1 of 2
1N5817-1N5819
www.diodes.com
ã Diodes Incorporated
1.0
30
10
1N5817
0.8
0.6
1N5818
1N5819
0.4
1.0
Tj = 25ºC
0.2
0
Pulse Width = 300 ms
2% Duty Cycle
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0.1
150
140
10
40
60
80
100 120
0
0.5
1.0
1.5
2.0
2.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
1000
25
20
Tj = 25ºC
f = 1MHz
Vsig = 50mV p-p
15
10
100
5
0
8.3ms Single Half Sine-Wave
JEDEC Method
10
0.1
1.0
10
100
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
DS23001 Rev. 6 - 2
2 of 2
1N5817-1N5819
www.diodes.com
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Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALSTIC PACKAGE-2
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