1N5408-T [DIODES]

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
1N5408-T
型号: 1N5408-T
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

二极管
文件: 总3页 (文件大小:95K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NOT RECOMMENDED FOR NEW DESIGN  
USE S3A-S3M Series  
1N5400 - 1N5408  
3.0A RECTIFIER  
Features  
Diffused Junction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 200A Peak  
Low Reverse Leakage Current  
Lead Free Finish, RoHS Compliant (Note 3)  
Mechanical Data  
Case: DO-201AD  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
SMB  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish Tin. Plated Leads Solderable per MIL-  
STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 1.1 grams (approximate)  
Dim  
A
Min  
25.4  
7.20  
1.20  
4.80  
Max  
-
B
9.50  
1.30  
5.30  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5404  
1N  
5406  
1N  
5407  
1N  
5408  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
280  
3.0  
V
A
VR(RMS)  
Average Rectified Output Current  
@ TA = 105C  
IO  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
Forward Voltage  
Peak Reverse Current  
at Rated DC Blocking Voltage  
Typical Total Capacitance  
200  
1.0  
A
V
IFSM  
VFM  
IRM  
CT  
@ IF = 3.0A  
@ TA = 25C  
@ TA = 150C  
(Note 2)  
10  
100  
A  
50  
25  
pF  
°C/W  
C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
15  
R  
JA  
-65 to +150  
Tj, TSTG  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.  
1 of 3  
September 2014  
© Diodes Incorporated  
1N5400-1N5408  
Document number: DS28007 Rev. 8 - 3  
www.diodes.com  
NOT RECOMMENDED FOR NEW DESIGN  
USE S3A-S3M Series  
4.0  
3.0  
2.0  
200  
100  
Tj = 25ºC  
10  
1.0  
0
1.0  
0.2  
0.4 0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
25  
50  
75  
100  
125  
150 175  
200  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
200  
100  
100  
1N5400 - 1N5405  
1N5406 - 1N5408  
10  
Tj = 25°C  
Pulse width = 8.3ms  
f = 1MHz  
Tj = 25ºC  
1.0  
10  
10  
100  
1.0  
1.0  
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Total Capacitance  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
2 of 3  
www.diodes.com  
September 2014  
© Diodes Incorporated  
1N5400-1N5408  
Document number: DS28007 Rev. 8 - 3  
NOT RECOMMENDED FOR NEW DESIGN  
USE S3A-S3M Series  
Ordering Information (Note 4)  
Packaging  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
Shipping  
500 Bulk  
Device  
1N5400-B  
1N5400-T  
1N5401-B  
1N5401-T  
1N5402-B  
1N5402-T  
1N5404-B  
1N5404-T  
1N5406-B  
1N5406-T  
1N5407-B  
1N5407-T  
1N5408-B  
1N5408-T  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
500 Bulk  
1.2K/Tape & Reel, 13 inch  
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02008.pdf.  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
3 of 3  
September 2014  
© Diodes Incorporated  
1N5400-1N5408  
Document number: DS28007 Rev. 8 - 3  
www.diodes.com  

相关型号:

1N5408-T/B

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

1N5408-T/R

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

1N5408-T3

3.0A SILICON RECTIFIER
WTE

1N5408-T3

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
SENSITRON

1N5408-T3-LF

暂无描述
WTE

1N5408-TB

3.0A SILICON RECTIFIER
WTE

1N5408-TB-LF

暂无描述
WTE

1N5408-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

1N5408-TP-HF

暂无描述
MCC

1N5408/1

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

1N5408/100

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

1N5408/100-E3

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY