MAC223-6 [DIGITRON]
Triac; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 250; Max DC Reverse Voltage: 2;
| 型号： | MAC223-6 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Triac; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 250; Max DC Reverse Voltage: 2 栅 三端双向交流开关 栅极 |
| 文件： | 总3页 (文件大小：945K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC223(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)
MAC223-3, MAC223A-3
100
200
300
400
500
600
700
800
MAC223-4, MAC223A-4
MAC223-5, MAC223A-5
VDRM
Volts
MAC223-6, MAC223A-6
MAC223-7, MAC223A-7
MAC223-8, MAC223A-8
MAC223-9, MAC223A-9
MAC223-10, MAC223A-10
RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C)
IT(RMS)
ITSM
25
Amps
Amps
Peak non-repetitive surge current
(1 cycle, 60Hz, TC = 80°C, preceded and followed by rated current)
250
Circuit fusing considerations (t = 8.3ms)
Peak gate current (t ≤ 2µs)
I2t
IGM
260
A2s
Amps
Volts
Watts
Watts
°C
2.0
≤ 2µs)
Peak gate voltage (t
VGM
PGM
PG(AV)
TJ
±10
Peak gate power (t ≤ 2µs)
20
0.5
≤ 8.3ms)
Average gate power (TC = 80°C, t
Operating junction temperature range
Storage temperature range
Mounting torque
-40 to +125
-40 to +150
8
Tstg
°C
In. lb.
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
1.2
60
Thermal resistance, junction to ambient
RӨJA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
Peak blocking current (2)
(VD = Rated VDRM, TJ = 25°C)
(VD = Rated VDRM, TJ = 125°C)
IDRM
-
-
-
-
10
2
µA
mA
Peak on-state voltage
VTM
Volts
mA
(ITM = 35A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)
-
1.4
1.85
Gate trigger current (continuous dc)
Ω)
(VD = 12V, RL = 100
IGT
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
-
-
20
30
50
75
Rev. 20131205
MAC223(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Gate trigger voltage (continuous dc)
Ω)
(VD = 12V, RL = 100
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
-
-
1.1
1.3
2.0
2.5
VGT
Volts
(VD = Rated VDRM, RL = 10kΩ, TJ = 125°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
0.2
0.2
0.4
0.4
-
-
Holding current
IH
mA
µs
(VD = 12V, ITM = 200mA, gate open)
-
-
-
-
10
50
-
Gate controlled turn-on time
tgt
(VD = Rated VDRM, ITM = 35A, IG = 200mA)
1.5
40
5
Critical rate of rise of off-state voltage
dv/dt
dv/dt(c)
V/µs
V/µs
(VD = Rated VDRM, exponential waveform, gate open, TC = 125°C)
-
Critical rate of rise of commutation voltage
(VD = Rated VDRM, ITM = 35A peak, commutating di/dt = 12.6A/ms, gate unenergized,
TC = 80°C)
-
Note 2: Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltages such that the voltage applied exceeds the rated blocking voltage
MECHANICAL CHARACTERISTICS
Case
TO-220AB
Marking
Pin out
Alpha-numeric
See below
Rev. 20131205
MAC223(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20131205
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