C106F [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 2.55; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-126;
| 型号： | C106F |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 2.55; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-126 |
| 文件： | 总3页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C106 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1kΩ, TJ = -40 to +110°C)
C106Q
C106Y
C106F
C106A
C106B
C106C
C106D
C106E
C106M
15
30
50
VRRM, VDRM
100
200
300
400
500
600
Volts
Forward current RMS (all conduction angles)
Average forward current (TA = 30°C)
IT(RMS)
IT(AV)
4
Amps
Amps
2.55
Peak non-repetitive surge current
ITSM
I2t
Amps
A2s
(1/2 cycle, 60Hz, TJ = -40 to +110°C)
20
Circuit fusing considerations
(t = 8.3ms)
1.65
Peak gate power
PGM
PG(AV)
IGFM
VGRM
TJ
0.5
Watts
Watts
Amps
Volts
°C
Average gate power
0.1
Forward peak gate current
Peak reverse gate voltage
Operating junction temperature range
Storage temperature range
Mounting torque(2)
0.2
6
-40 to +110
-40 to +150
6
Tstg
°C
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink
contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
3
Thermal resistance, junction to ambient
RӨJA
75
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Peak forward or reverse blocking current
(VAK = rated VDRM or VRRM, RGK = 1kΩ)
TJ = 25°C
IDRM, IRRM
µA
-
-
-
-
10
TJ = 110°C
100
Rev. 20130118
C106 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward “on” voltage
VTM
Volts
(IFM = 1A peak)
-
-
2.2
Gate trigger current (continuous dc)
IGT
Ω)
(VAK = 6Vdc, RL = 100
(VAK = 6Vdc, RL = 100
-
-
30
75
200
500
µA
Ω, T
C = -40°C)
Gate trigger voltage (continuous dc)
Ω)
VGT
(VAK = 6Vdc, RL = 100
0.4
0.5
0.60
0.75
0.8
1.0
Volts
(VAK = 6Vdc, RL = 100Ω, TC = -40°C)
Holding current
Ω)
(VD = 12Vdc, RGK = 1k
TJ = 25°C
IH
0.3
0.4
-
-
-
3
6
2
mA
TJ = -40°C
TJ = 110°C
0.14
Forward voltage application rate
dv/dt
V/µs
Ω, V
(TJ = 110°C, RGK = 1000
D = rated VDRM
)
-
-
-
8
-
-
-
Turn-on time
tgt
tq
1.2
40
µs
µs
Turn-off time
MECHANICAL CHARACTERISTICS
Case:
TO-126
Marking:
Polarity:
Body painted, alpha-numeric
Cathode band
TO-126
Inches
Millimeters
Min
Max
Min
Max
11.050
7.750
2.670
0.660
3.180
2.460
2.410
0.640
16.640
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.091
0.050
0.015
0.595
0.435
0.305
0.105
0.026
0.125
0.097
0.095
0.025
0.655
10.80
7.490
2.410
0.510
2.920
2.310
1.270
0.380
15.110
G
H
J
K
M
Q
R
S
U
V
3° TYP
3° TYP
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
-
3.760
1.140
0.640
3.680
1.020
4.010
1.400
0.890
3.940
-
Rev. 20130118
C106 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130118
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