2N879HR [DIGITRON]
Silicon Controlled Rectifier;
| 型号： | 2N879HR |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总6页 (文件大小：869K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Working and repetitive
peak reverse voltage
Non-repetitive peak reverse
voltage
Peak forward blocking voltage
VFXM
VROM(wkg) and VROM(rep)
VROM(non-rep) < 5 milliseconds
Part number
Units
TJ = -65° to 125°C
TJ = -65° to 150°C
TJ = -65° to 125°C
RGK = 1000 ohms maximum
2N877, 2N885
2N878, 2N886
2N879, 2N887
2N880, 2N888
2N881, 2N889
30
60
30
60
45
90
V
V
V
V
V
100
150
200
100
150
200
130
200
275
Rating
Symbol
VF(pk)
Value
300
Unit
V
Peak forward voltage
RMS on-state current
IT(RMS)
0.5
A
Peak one cycle surge (non-repetitive) on-state current
Peak forward gate power dissipation
Average forward gate power dissipation
Peak gate voltage, forward and reverse
Storage temperature
IFM
PGM
7.0
A
0.1
W
W
V
PG(AV)
VGFM, VGRM
Tstg
0.01
6.0
-65 to 150
-65 to 150
°C
°C
Operating temperature
TJ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Units
Test Condition
Forward blocking current
VFX = rated VFXM, RGK = 1000ohms
-
-
-
-
0.03
10
10
100
1
TJ = 25°C
2N877-2N881
IFX
TJ = 125°C
µAdc
0.03
10
TJ = 25°C
2N885-2N889
20
TJ = 125°C
VRX = rated VROM(rep)
Reverse blocking current
2N877-2N881
-
-
-
-
-
0.1
10
0.1
10
1
10
100
1
TJ = 25°C
TJ = 125°C
IRX
µAdc
TJ = 25°C
2N885-2N889
20
10
TJ = 125°C
VGRM = 2V, TJ = 25°C
Reverse gate current
Peak on-state voltage
IGRM
VFM
µAdc
V
-
1.3
1.9
TJ = 25°C, IFX = 1A, single, half
sinewave pulse, 2.0ms wide max.
Rev. 20180321
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
VFX = 6Vdc, RGK = 1000ohms,
Gate trigger current
RL = 100 ohms max.
2N877-2N881
2N885-2N889
-
-
40
10
200
20
TJ = 25°C
IGT
µAdc
Vdc
TJ = 25°C
VFX = 6Vdc, RGK = 1000ohms,
RL = 100ohms max.
Gate trigger voltage
2N877-2N881
2N885-2N889
0.4
0.5
0.5
-
0.8
0.6
TJ = 25°C
TJ = 25°C
0.44
VGT
VFX = rated VFXM, RGK = 1000ohms,
TJ = 125°C
All types
0.05
-
Characteristic
Symbol
Min
Typ
Max
Units
Test Condition
TJ = 25°C, RGK = 1000ohms,
VFX = 24V dc
Holding current
0.4
0.4
-
1.7
1.1
40
5.0
3.0
-
2N877-2N881
2N885-2N889
IH
mAdc
Critical rate of rise of applied
forward voltage
dv/dt
td + tr
toff
V/µs
µs
TJ = 125°C, RGK = 1000ohms,
VFXM = rated VFXM
Turn-on time
-
-
1.0
15
-
-
TJ = 25°C, VFX = rated VFXM
,
(Delay time + rise time)
IFM = 1A, gate supply: 6V, 300ohms
Circuit commutated turn-off time
(all types)
µs
TJ = 125°C, RGK = 1000ohms, IFM
1A, IR(recovery) = 1A, reapplied
VFXM = rated, rate of rise of
reapplied forward blocking
=
voltage = 20V/µs
Rev. 20180321
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-18
Marking:
Pin out:
Alpha-numeric
See below
Rev. 20180321
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20180321
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20180321
2N877-2N881,
2N885-2N889
SILICON CONTROLLED RECTFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20180321
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