2N2420BHR [DIGITRON]
Unijunction Transistor;
| 型号： | 2N2420BHR |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Unijunction Transistor |
| 文件： | 总2页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
2N2417 - 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Power dissipation(1)
Symbol
PD
Value
Unit
mW
mA
350
RMS emitter current
IE
70
(2)
Peak pulse emitter current
ie
2
60
Amps
Volts
Volts
°C
Emitter reverse voltage
VB2E
VB2B1
TJ
Interbase voltage
65
Operating junction temperature range
-65 to 175
Storage temperature range
Tstg
-65 to 175
°C
Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.
Note 2: Capacitor discharge – 10µF or less, 30 volts or less.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
0.51
0.51
0.56
0.56
0.62
-
-
-
-
-
-
0.62
0.62
0.68
0.68
0.75
0.75
-
-
-
-
-
-
Intrinsic standoff ratio
(VB2B1 = 10V)
η
(1)
0.62
2N2417, 2N2417A, 2N2417B
2N2418, 2N2418A, 2N2418B
2N2419, 2N2419A, 2N2419B
2N2420, 2N2420A, 2N2420B
2N2421, 2N2421A, 2N2422B
2N2422, 2N2422A, 2N2422B
4.7
6.2
4.7
6.2
4.7
-
-
-
-
-
-
6.8
9.1
6.8
9.1
6.8
9.1
Interbase resistance
(VB2B1 = 3V, IE = 0)
rBB
kohms
6.2
Emitter saturation voltage
VEB1(sat)
IB2(mod)
Volts
mA
(VB2B1 = 10V, IE = 50mA)(2)
-
-
3.5
15
-
-
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
VB2E = 60V
-
-
-
-
-
-
2
2
Emitter reverse current
(IB1 = 0)
V
V
B2E = 60V
B2E = 30V
IEB2O
µA
0.2
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
-
-
-
-
-
-
12
12
6
Peak point emitter current
(VB2B1 = 25V)
IEB2O
µA
mA
V
Valley point current
IV
8
-
-
(VB2B1 = 20V, RB2 = 100ohms)(2)
2N2417, 2N2418, 2N2419, 2N2420,
2N2421, 2N2422
2N2417A, 2N2418A, 2N2419A,
2N2420A, 2N2421A, 2N2422A
2N2417B, 2N2418B, 2N2419B,
2N2420B, 2N2421B, 2N2422B
-
-
-
-
-
-
-
Base-one peak pulse voltage(3)
VOB1
3
3
Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one junction diode drop
(≈ 0.45V @ 10µA).
Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20121019
D I G I T R O N S E M I C O N D U C T O R S
2N2646, 2N2647
SILICON UNIJUNCTION TRANSISTOR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20121019
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