2N1843A [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48;
| 型号： | 2N1843A |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48 栅 栅极 |
| 文件： | 总5页 (文件大小：1288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
IT(RMS)
IT(AV)
Value
16
Unit
A
RMS on-state current @ TC = 80°C
Mean on-state current @ TC = 80°C
10
A
Non-repetitive surge peak on-state current @ TJ ≤ 125°C
t = 8.3ms
t = 10ms
ITSM
157
150
A
I2t for fusing @ TJ ≤ 125°C, t = 10ms
I2t
112.5
100
A2s
Critical rate of rise of on-state current
di/dt
A/µs
Operating junction temperature range; non-“A”
Operating junction temperature range; “A”
-40 to +100
-65 to +125
TJ
°C
°C
Storage temperature range; non-“A”
Storage temperature range; “A”
-40 to +125
-65 to +125
Tstg
VOLTAGE RATINGS
TJ = 125°C
2N1842(A) 2N1843(A) 2N1844(A) 2N1845(A) 2N1846(A) 2N1847(A) 2N1848(A) 2N1849(A) 2N1850(A)
VDRM = VRRM
25
50
100
150
200
250
300
400
500
VOLTAGE RATINGS
TJ = 125°C
VDRM = VRRM
TR6010
600
TR7010
700
TR8010
800
TR9010
900
TR1010
1000
TR1110
1100
TR1210
1200
THERMAL RESISTANCE
Thermal resistance
Symbol
Rth(j-c)
Value
2
Unit
Junction to case for DC
Case to heatsink
°C/W
°C/W
Rth(c-h)
0.4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Value
Unit
Characteristic
Symbol
Test conditions
Min
Typ
Max
80
3
Gate trigger current
IGT
VGT
VGD
-
-
-
-
-
mA
V
TJ = 25°C
TJ = 25°C
TJ = 125°C
VD = 12V
VD = 12V
VD = VDRM
RL = 33Ω
RL = 33Ω
RL = 3.3Ω
tp ≥ 20µs
tp ≥ 20µs
Gate trigger voltage
Peak gate voltage
0.25
-
Gate
open
Holding current
IH
-
20
-
mA
TJ = 25°C
IT = 0.5A
Peak on-state voltage
VTM
IDRM
IRRM
-
-
-
-
-
-
2.2
5
V
TJ = 25°C
TJ = 125°C
TJ = 125°C
ITM = 30A
tp = 10ms
Maximum off-state current
Maximum off-state current
mA
mA
VDRM specified
VRRM specified
5
TJ = 25°C
IG = 200mA
IT = 30A
diG/dt = 2A/µs
Turn on time
tgt
-
2
-
µs
VD = VDRM
Rev. 20200923
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Value
Unit
Characteristic
Symbol
Test conditions
Min
Typ
Max
VD = 0.67
VDRM
Gate open
TJ = 125°C
diR/dt = 30A/µs
IT = 10A
dv/dt = 20V/µs
Turn off time
tq
-
100
-
-
µs
VR = 30V
Critical rise of off-state voltage
dv/dt
100
-
V/µs
TJ = 125°C
Linear slope up to 0.67 VDRM specified
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Polarity
Alpha-numeric
Cathode
Rev. 20200923
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
Rev. 20200923
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
Rev. 20200923
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
Rev. 20200923
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