1N4896A [DIGITRON]
Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 12.16; Max TMS Bridge Input Voltage: 12.8; Max DC Reverse Voltage: 13.44; Capacitance: 0.01; Package: DO-35;
| 型号： | 1N4896A |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 12.16; Max TMS Bridge Input Voltage: 12.8; Max DC Reverse Voltage: 13.44; Capacitance: 0.01; Package: DO-35 |
| 文件： | 总5页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4896(A)-1N4915(A)
TEMPERATURE COMPENSATED ZENER DIODES
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Characteristics
Symbol
TJ, TSTG
RѲJL
Value
-65 to +175
300
Unit
°C
Operating and storage temperature
Thermal resistance, junction to lead @ 0.375” from body
Off state power dissipation @ TA = 50°C (1)
Maximum reverse current @ TA = 25°C and VR = 8V
°C/W
mW
µA
PD
500
IRM
15
Solder temperature @ 10s
TSP
260
°C
Note 1: Derate at 4mW/°C above TA = 50°C.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Maximum voltage
Effective
temperature
coefficient
(Note 3)
Maximum
Test current
(Notes 1 & 5)
change with
temperature
(Notes 2 & 5)
Temperature
range
dynamic
impedance
(Note 4)
Maximum noise
density
Part
number
IZT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
∆VZ
αvz
ZZT
Ohms
400
400
400
400
400
400
400
400
200
200
200
200
200
200
200
200
100
100
100
100
100
100
ND
µV/√Hz
0.8
Volts
0.096
0.198
0.048
0.099
0.019
0.040
0.010
0.20
°C
± %/°C
0.01
1N4896
1N4896A
1N4897
1N4897A
1N4898
1N4898A
1N4899
1N4899A
1N4900
1N4900A
1N4901
1N4901A
1N4902
1N4902A
1N4903
1N4903A
1N4904
1N4904A
1N4905
1N4905A
1N4906
1N4906A
To +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
0.01
0.8
0.005
0.005
0.002
0.002
0.001
0.001
0.01
0.8
0.8
0.8
0.8
0.8
0.8
0.096
0.198
0.048
0.099
0.019
0.040
0.010
0.020
0.096
0.198
0.048
0.099
0.019
0.040
0.4
0.01
0.4
0.005
0.005
0.002
0.002
0.001
0.001
0.01
0.4
0.4
0.4
0.4
0.4
0.4
0.25
0.25
0.25
0.25
0.25
0.25
0.01
0.005
0.005
0.002
0.002
Rev. 20121112
1N4896(A)-1N4915(A)
TEMPERATURE COMPENSATED ZENER DIODES
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Maximum voltage
Effective
temperature
coefficient
(Note 3)
Maximum
dynamic
impedance
(Note 4)
Test current
(Notes 1 & 5)
change with
temperature
(Notes 2 & 5)
Temperature
range
Maximum noise
density
Part
number
IZT
mA
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
∆VZ
αvz
ZZT
Ohms
100
100
50
ND
µV/√Hz
0.25
0.25
0.22
0.22
0.22
0.22
0.22
0.22
0.22
0.22
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
Volts
0.010
0.020
0.096
0.198
0.048
0.099
0.019
0.040
0.010
0.020
0.096
0.198
0.048
0.099
0.019
0.040
0.010
0.020
°C
± %/°C
0.001
0.001
0.01
1N4907
1N4907A
1N4908
1N4908A
1N4909
1N4909A
1N4910
1N4910A
1N4911
1N4911A
1N4912
1N4912A
1N4913
1N4913A
1N4914
1N4914A
1N4915
1N4915A
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 o +100
-55 to +100
+25 to +100
-55 to +100
+25 to +100
-55 to +100
+25 to +10
-55 to +100
+25 to +10
-55 to +100
+25 to +10
-55 to +100
+25 to +10
-55 to +100
0.01
50
0.005
0.005
0.002
0.002
0.001
0.001
0.01
50
50
50
50
50
50
25
0.01
25
0.005
0.005
0.002
0.002
0.001
0.001
25
25
25
25
25
25
Note 1: Nominal voltage for all typoes 12.8V ±5%.
Note 2: Referred to as “box” measurement method, ∆VZ is the minimum voltage variance that will occur as the voltage is scanned through all temperatures between the temperature range
limits.
Note 3: The effective temperature coefficients are tabulated in %/°C primarily for information only since temperature compensated diodes inherently have a non-linear voltage temperature
characteristic.
Note 4: The dynamic zener impedance ZZT is derived from the resulting AC voltage developed when a 60vps, rms AC current equal to 10% of the DC zener current IZT is superimposed on IZT
.
Note 5: Voltage measurements to be perform 15 seconds after application of DC current.
Rev. 20121112
1N4896(A)-1N4915(A)
TEMPERATURE COMPENSATED ZENER DIODES
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
DO-35
Marking:
Polarity:
Body painted, alpha-numeric
Cathode band
Rev. 20121112
1N4896(A)-1N4915(A)
TEMPERATURE COMPENSATED ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Rev. 20121112
1N4896(A)-1N4915(A)
TEMPERATURE COMPENSATED ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Rev. 20121112
相关型号：
1N4896AE3
Zener Diode, 12.8V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACAKGE-2
MICROSEMI
1N4897
Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 12.16; Max TMS Bridge Input Voltage: 12.8; Max DC Reverse Voltage: 13.44; Capacitance: 0.005; Package: DO-35
DIGITRON
1N4897A
Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 12.16; Max TMS Bridge Input Voltage: 12.8; Max DC Reverse Voltage: 13.44; Capacitance: 0.005; Package: DO-35
DIGITRON
1N4897AE3
Zener Diode, 12.8V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACAKGE-2
MICROSEMI
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