AT25QL641-SUE-T [DIALOG]
64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support;型号: | AT25QL641-SUE-T |
厂家: | Dialog Semiconductor |
描述: | 64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support 时钟 光电二极管 内存集成电路 |
文件: | 总77页 (文件大小:5401K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AT25QL641
64-Mbit, 1.7V Minimum
SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
Features
ò
ò
Single 1.7V - 2.0V Supply
Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) compatible
ò
ò
ò
ò
ò
ò
Supports SPI Modes 0 and 3
Supports Dual Output Read and Quad I/O program and read
Supports QPI program and read
133 MHz maximum operating frequency
Clock-to-Output (tV1) of 6 ns
Up tp 66 MB/s continuous data transfer rate
ò
ò
ò
Quad enabled (factory default setting: see Section 6.7)
Full chip erase
Flexible, optimized erase architecture for code and data storage applications
ò
ò
ò
ò
0.6 ms typical Page Program (256 Bytes) time
60 ms typical 4 Kbyte Block Erase time
200 ms typical 32 Kbyte Block Erase time
350 ms typical 64 Kbyte Block Erase time
ò
ò
ò
ò
ò
Hardware controlled locking of Status registers via WP pin
4 Kbit secured One-Time Programmable (OTP) security register
Hardware write protection
Serial Flash Discoverable Parameters (SFDP) register
Flexible programming
ò
ò
Byte/page program (1 to 256 Bytes)
Dual or quad input byte/page program (1 to 256 Bytes)
ò
ò
ò
Erase/program suspend and resume
JEDEC standard manufacturer and device ID read methodology
Low power dissipation
ò
ò
ò
2 µA Deep Power-Down (DPD) current (typical)
10 µA Standby current (typical)
5 mA Active read current (typical)
ò
ò
ò
ò
Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks)
Data Retention: 20 years
Industrial temperature range: -40 °C to +85 °C
Industry standard green (Pb/Halide-free/RoHS compliant) package options
ò
ò
ò
8-lead SOIC (0.208” Wide EIAJ)
8-pad DFN (6 x 5 x 0.6 mm)
8-ball WLCSP (dBGA)
DS-25QL641–130E–10/2018
1.
Introduction
The Adesto® AT25QL641 is a serial interface Flash memory device designed for use in a wide variety of high-volume
consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM
for execution. The flexible erase architecture of the AT25QL641 is ideal for data storage as well, eliminating the need for
additional data storage devices.
The erase block sizes of the AT25QL641 have been optimized to meet the needs of today's code and data storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because
certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and
unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased
memory space efficiency allows additional code routines and data storage segments to be added while still maintaining
the same overall device density.
SPI clock frequencies of up to 133 MHz are supported, allowing equivalent clock rates of 266 MHz for Dual Output and
532 MHz for Quad Output when using the QPI and Fast Read Dual/Quad I/O instructions.The AT25QL641 array is
organized into 32,768 programmable pages of 256 bytes each. Up to 256 bytes can be programmed at a time using the
Page Program instructions. Pages can be erased 4 KB block, 32 KB block, 64 KB block, or the entire chip.
The devices operate on a single 1.7V to 1.95V power supply with current consumption as low as 5 mA active and 2
Deep Power Down (DPD). All devices offered in space-saving packages. The device supports JEDEC standard
manufacturer and device identification with a 4 Kbit secured OTP.
µA for
AT25QL641
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2
2.
Pinouts and Pin Descriptions
The following figures show the available package types.
Figure 1-1. 8-SOIC (Top View)
Figure 1-2. 8-UDFN (Top View)
1
8
7
6
5
CS
VCC
CS
SO (IO1)
1
2
3
4
8
7
6
5
VCC
2
SO (IO1)
HOLD (IO3)
SCK
HOLD (IO3)
SCK
3
WP (IO2, ACC)
WP (IO2, ACC)
GND
4
GND
SI (IO0)
SI (IO0)
Figure 1-3. 8-WLCSP (Bottom View)
NC
NC
CS
Vcc
I/O1(SO)
I/O2(WP)
GND
I/O3(HOLD)
SCK
I/O0(SI)
NC
NC
During all operations, VCC must be held stable and within the specified valid range: VCC (min) to VCC (max).
All of the input and output signals must be held high or low (according to voltages of VIH, VOH, VIL or VOL).
AT25QL641
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Table 1-1. Pin Descriptions
Asserted
State
Symbol
Name and Function
CHIP SELECT
Type
When this input signal is high, the device is deselected and serial data output pins are at
high impedance. Unless an internal program, erase or write status register cycle is in
progress, the device remains in the standby power mode (this is not the deep power
down mode). Driving the Chip Select (CS) low enables the device, placing it in the active
power mode. After power-up, a falling edge of Chip Select (CS) is required prior to the
start of any instruction.
CS
Low
Input
SERIAL CLOCK
This input signal provides the timing for the serial interface. Instructions, addresses, or data
present at serial data input are latched on the rising edge of Serial Clock (SCK). Data are
shifted out on the falling edge of the SCK.
SCK
-
Input
SERIAL INPUT
The SI pin is used to shift data into the device. The SI pin is used for all data input, including
command and address sequences. Data on the SI pin is always latched in on the rising edge
of SCK.
With the Dual-Output and Quad-Output Read commands, the SI Pin becomes an output pin
(I/O0) in conjunction with other pins to allow two or four bits of data on (I/O3-0) to be clocked in
on every falling edge of SCK
SI (I/O0)
-
Input/Output
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin is referenced as the SI
pin unless specifically addressing the Dual-I/O and Quad-I/O modes in which case it is
referenced as I/O0.
Data present on the SI pin is ignored whenever the device is deselected (CS is deasserted).
SERIAL OUTPUT
The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out
on the falling edge of SCK.
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O0) in conjunction
with other pins to allow two bits of data on (I/O1-0) to be clocked in on every falling edge of
SCK.
SO (I/O1)
-
Input/Output
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin is referenced as the SO
pin unless specifically addressing the Dual-I/O modes in which case it is referenced as I/O1.
The SO pin is in a high-impedance state whenever the device is deselected (CS is
deasserted).
WRITE PROTECT
The Write Protect (WP) pin can be used to protect the Status register against data
modification. Used in conjunction with the Block Protect (SEC, TB, BP2, BP1 and BP0) bits
and Status Register Protect SRP) bits, a portion or the entire memory array can be hardware-
protected. The WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O,
the WP pin (Hardware Write Protect) function is not available since this pin is used for I/O2.
WP (I/O2)
-
Input/Output
AT25QL641
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4
Table 1-1. Pin Descriptions (Continued)
Asserted
State
Symbol
Name and Function
HOLD
Type
The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on
the SI pin are ignored and the SO pin is placed in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an
effect on internally self-timed operations such as a program or erase cycle.
HOLD
(I/O3)
With the Quad-Input Byte/Page Program command, the HOLD pin becomes an input pin (I/O3)
and with other pins, allows four bits (on I/O3-0) of data to be clocked in on every rising edge of
SCK. With the Quad-Output Read commands, the HOLD Pin becomes an output pin (I/O3) in
conjunction with other pins to allow four bits of data on (I/O33-0) to be clocked in on every
falling edge of SCK.
-
Input/Output
To maintain consistency with SPI nomenclature, the HOLD (I/O3) pin is referenced as the
HOLD pin unless specifically addressing the Quad-I/O modes in which case it is referenced as
I/O3. The HOLD pin is internally pulled-high and may be left floating if the Hold function is not
used. However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
DEVICE POWER SUPPLY: VCC is the supply voltage. It is the single voltage used for all
device functions including read, program, and erase. The VCC pin is used to supply the
source voltage to the device. Operations at invalid VCC voltages may produce spurious results
and should not be attempted.
VCC
-
-
Power
Power
GROUND: VSS is the reference for the VCC supply voltage. The ground reference for the
power supply. GND should be connected to the system ground.
GND
AT25QL641
DS-25QL641–130E–10/2018
5
2.
Block Diagram
Figure 2-1 shows a block diagram of the AT25QL641 serial Flash.
Figure 2-1. AT25QL641 Block Diagram
RESET*
Control and
Protection Logic
I/O Buffers
and Latches
CS
SRAM
Data Buffer
SCK
Interface
Control
SI (I/O )
0
And
Logic
Y-Decoder
X-Decoder
Y-Gating
SO (I/O )
1
Flash
Memory
Array
WP (I/O
2,
ACC)
HOLD
(I/O )
3
Note: I/O pin naming convention is used for Dual-I/O and Quad-I/O commands.
3-0
* Hardware-controlled RESET available ONLY on packages with greater than eight pins.
AT25QL641
DS-25QL641–130E–10/2018
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3.
Memory Array
To provide the greatest flexibility, the memory array of the AT25QL641 can be erased in four levels of granularity
including a full chip erase. The size of the erase blocks is optimized for both code and data storage applications, allowing
both code and data segments to reside in their own erase regions. Figure 3-1 illustrates the the breakdown of each erase
level.
Figure 3-1. Memory Architecture Diagram
Block Erase Detail
Page Program Detail
64KB
32KB
4KB
1-256 byte
Block Address
Range
Page Address
Range
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
7FFFFFh – 7FF000h
7FEFFFh – 7FE000h
7FDFFFh – 7FD000h
7FCFFFh – 7FC000h
7FBFFFh – 7FB000h
7FAFFFh – 7FA000h
7F9FFFh – 7F9000h
7F8FFFh – 7F8000h
7F7FFFh – 7F7000h
7F6FFFh – 7F6000h
7F5FFFh – 7F5000h
7F4FFFh – 7F4000h
7F3FFFh – 7F3000h
7F2FFFh – 7F2000h
7F1FFFh – 7F1000h
7F0FFFh – 7F0000h
7EFFFFh – 7EF000h
7EEFFFh – 7EE000h
7EDFFFh – 7ED000h
7ECFFFh – 7EC000h
7EBFFFh – 7EB000h
7EAFFFh – 7EA000h
7E9FFFh – 7E9000h
7E8FFFh – 7E8000h
7E7FFFh – 7E7000h
7E6FFFh – 7E6000h
7E5FFFh – 7E5000h
7E4FFFh – 7E4000h
7E3FFFh – 7E3000h
7E2FFFh – 7E2000h
7E1FFFh – 7E1000h
7E0FFFh – 7E0000h
7FFFFFh – 7FFF00h
7FFEFFh – 7FFE00h
7FFDFFh – 7FFD00h
7FFCFFh – 7FFC00h
7FFBFFh – 7FFB00h
7FFAFFh – 7FFA00h
7FF9FFh – 7FF900h
7FF8FFh – 7FF800h
7FF7FFh – 7FF700h
7FF6FFh – 7FF600h
7FF5FFh – 7FF500h
7FF4FFh – 7FF400h
7FF3FFh – 7FF300h
7FF2FFh – 7FF200h
7FF1FFh – 7FF100h
7FF0FFh – 7FF000h
7FEFFFh – 7FEF00h
7FEEFFh – 7FEE00h
7FEDFFh – 7FED00h
7FECFFh – 7FEC00h
7FEBFFh – 7FEB00h
7FEAFFh – 7FEA00h
7FE9FFh – 7FE900h
7FE8FFh – 7FE800h
32KB
32KB
32KB
32KB
64KB
64KB
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
256 bytes
0017FFh – 001700h
0016FFh – 001600h
0015FFh – 001500h
0014FFh – 001400h
0013FFh – 001300h
0012FFh – 001200h
0011FFh – 001100h
0010FFh – 001000h
000FFFh – 000F00h
000EFFh – 000E00h
000DFFh – 000D00h
000CFFh – 000C00h
000BFFh – 000B00h
000AFFh – 000A00h
0009FFh – 000900h
0008FFh – 000800h
0007FFh – 000700h
0006FFh – 000600h
0005FFh – 000500h
0004FFh – 000400h
0003FFh – 000300h
0002FFh – 000200h
0001FFh – 000100h
0000FFh – 000000h
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
00FFFFh – 00F000h
00EFFFh – 00E000h
00DFFFh – 00D000h
00CFFFh – 00C000h
00BFFFh – 00B000h
00AFFFh – 00A000h
009FFFh – 009000h
008FFFh – 008000h
007FFFh – 007000h
006FFFh – 006000h
005FFFh – 005000h
004FFFh – 004000h
003FFFh – 003000h
002FFFh – 002000h
001FFFh – 001000h
000FFFh – 000000h
32KB
64KB
32KB
AT25QL641
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4.
Device Operation
4.1
Standard SPI Operation
The AT25QL641 features a serial peripheral interface on four signals: Serial Clock (SCK). Chip Select (CS), Serial
Data Input (SI) and Serial Data Output (SO). Standard SPI instructions use the SI input pin to serially write instructions,
addresses or data to the device on the rising edge of SCK. The SO output pin is used to read data or status from the
device on the falling edge of SCK.
SPI bus operation Modes 0 (0, 0) and 3 (1, 1) are supported. The primary difference between Mode 0 and Mode 3
concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not being transferred
to the Serial Flash. For Mode 0 the SCK signal is normally low on the falling and rising edges of CS. For Mode 3 the
SCK signal is normally high on the falling and rising edges of CS.
4.2
4.3
Dual SPI Operation
The AT25QL641 supports Dual SPI operation. This instruction allows data to be transferred to or from the device at two
times the rate of the standard SPI. The Dual Read instruction is ideal for quickly downloading code to RAM upon power-
up (code-shadowing) or for execute-in-place (XiP) non-speed-critical code directly from the SPI bus. When using Dual
SPI instructions the SI and SO pins become bidirectional I/0 pins; I/O0 and I/O1.
Quad SPI Operation
The AT25QL641 supports Quad SPI operation. This instruction allows data to be transferred to or from the device at
four times the rate of the standard SPI. The Quad Read instruction offers a significant improvement in continuous
and random access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus. When
using Quad SPI instruction the SI and SO pins become bidirectional I/O0 and I/O1, and the WP and HOLD pins become
I/O2 and I/O3 respectively. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be
set.
4.4
QPI Operation
The AT25QL641 is shipped with the Quad Enable bit set and the device powers up in QPI mode. When using QPI
instructions, the SI and SO pins become bidirectional I/O0 and I/O1, and the WP and HOLD pins become I/O2 and I/O3
respectively.
The typical SPI protocol requires that the byte-long instruction code being shifted into the device only via SI pin in eight
serial clocks. The QPI mode utilizes all four I/O pins to input the instruction code, thus only two serial clocks are required.
This can significantly reduce the SPI instruction overhead and improve system performance in an XiP environment.
Standard/ Dual/ Quad SPI mode and QPI mode are exclusive. Only one mode can be active at any given time, Enable
QPI (38h) and Disable QPI (FFh) instructions are used to switch between these two modes. Upon power-up or after
software reset using Reset (99h) instruction, the default state of the device is Standard/Dual/Quad SPI mode.
AT25QL641
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8
5.
Write Protection
To protect inadvertent writes by the possible noise, several means of protection are applied to the Flash memory.
5.1
Write Protect Features
The write protect features are listed below.
ò
ò
While Power-on reset, all operations are disabled and no instruction is recognized.
An internal time delay of tPUW can protect the data against inadvertent changes while the power supply is outside
the operating specification. This includes the Write Enable, Page Program, Block Erase, Chip Erase, Write Security
Register and the Write Status Register commands.
ò
ò
For data changes, Write Enable instruction must be issued to set the Write Enable Latch (WEL) bit to “0”. Power-
up, Completion of Write Disable, Write Status Register, Page Program, Block Erase and Chip Erase are subjected to
this condition.
Status Register protect (SRP) and Block protect (SEC, TB, BP2, BP1, and BP0) bits may be used to configure a
portion of the memory as read-only (software protection).
ò
ò
The Write Protect (WP) pin can be used to change the Status register (hardware control).
The Deep Power Down (DPD) mode provides extra protection from unexpected data changes as all instructions are
ignored under this status except for the ‘Release from Deep Power Down’ instruction.
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9
6.
Status Registers
The Read Status Register instruction can be used to provide status on the availability of the Flash memory array, if the device
is write enabled or disabled, the state of write protection, and the Quad SPI setting. The Write Status Register instruction can
be used to configure the devices write protection features and Quad SPI setting. Write access to the Status register is
controlled, in some cases, by the WP pin.
Table 6-1. Status Register-1
S7
S6
S5
S4
S3
S2
S1
S0
SRP
SEC
TB
BP2
BP1
BP0
WEL
BUSY
Status
Register
Protect 0
Sector Protect Top/Bottom
(Non- Volatile) Write Protect (Non- Volatile) (Non- Volatile) (Non- Volatile)
(Non- Volatile)
Block Protect Block Protect Block Protect Write Enable Erase or Write
Latch
in Progress
(Non- Volatile)
Table 6-2. Status Register-2
S15
S14
S13
(R)
S12
(R)
S11
(R)
S10
(R)
S9
S8
SUS
CMP
QE
SRP1
Suspend
Status
Complement
Protect
Reserved
Reserved
Reserved
Reserved
Quad Enable
(Non-Volatile)
Register
Protect 1
(Non-Volatile)
(Non-Volatile)
6.1
Busy
BUSY is a read-only bit (S0) that is set to a 1 state when the device is executing a Page Program, Erase, Write Status Register
or Write Security Register instruction. During this time the device will ignore further instruction except for the Read Status
Register and Erase / Program Suspend instruction (see tW, tPP, tSE, tBE1, tBE2 and tCE in Table 8-7, AC Electrical Characteristics).
When the Program, Erase, Write Status Register or Write Security Register command has completed, hardware clears the
BUSY bit (to a 0 state), indicating the device is ready for further instructions.
6.2
6.3
Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in status register (S1) that is set to a 1 after executing a Write Enable instruction.
The WEL status bit is cleared to a 0 when device is write disabled. A write disable state occurs upon power-up or after any of
the following instructions: Write Disable, Page Program, Erase and Write Status Register.
Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits (S4, S3, and S2) that provide write protection control and
status. Block protect bits can be set using the Write Status Register Instruction (see tW in Table 8-7, AC Electrical
Characteristics). All, none or a portion of the memory array can be protected from Program and Erase commands (see Status
Register Memory Protection table). The factory default setting for the Block Protection Bits is 0, none of the array protected.
6.4
Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) is non-volatile bits (S5) that controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB
= 0) or the Bottom (TB = 1) of the array as shown in the Status Register Memory Protection table. The factory default setting is
TB = 0. The TB bit can be set with the Write Status Register Instruction depending on the state of the SRP0, SRP1, and WEL
bits.
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6.5
6.6
Sector/Block Protect (SEC)
The Sector protect bit (SEC) is a non-volatile bit (S6) that controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB Sectors
(SEC = 1) or 64 KB blocks (SEC = 0) in the Top (TB = 0) or the Bottom (TB = 1) of the array as shown in the Status Register
Memory protection table. The default setting is SEC = 0.
Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non
-
volatile read/write bits in the status register (S8 and S7)
. The
SRP bits control the method of write protection: software protection, hardware protection
,
power supply lock down or one time
-
programmable (OTP) protection
.
Table 6-3. Protection Types
SRP1
SRP0
WP
Type of Protection
Description
WP pin no control. The register can be written to after a Write Enable
command, WEL = 1 (factory default)
0
0
X
Software Protection
When WP pin is low the Status Register locked and can not be written
to.
0
0
1
1
1
1
0
1
0
1
Hardware Protected
Hardware
Unprotected
When WP pin is high the Status register is unlocked and can be
written to after a Write Enable command, WEL = 1.
Power Supply
Lock-Down
Status Register is protected and cannot be written to again until the
(1)
next power down, power-up cycle
X
X
Status Register is permanently protected and cannot be written to.
One Time Program
Note: 1. When SRP1, SRP0=(1,0), a power down, power-up cycle will change SRP1, SRP0 to(0,0) state.
6.7
Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit (S9) that allows Quad operation. When the QE bit is set to
a 0 state (factory default) the WP pin and HOLD are enabled. When the QE pin is set to a 1 the Quad I/O2 and I/O3 pins
are enabled.
WARNING: The QE bit should never be set to a 1 during standard SPI or Dual SPI operation if the WP or HOLD
pins are tied directly to the power supply or ground.
6.8
6.9
Complement Protect (CMP)
The Complement Protect bit (CMP) is a non-volatile read/write bit (S14). It is used in conjunction with SEC, TB, BP2,
BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array protection set
by SEC, TB, BP2, BP1 and BP0 is reversed. For instance, when CMP = 0, a top 4KB sector can be protected while the
rest of the array is not; when CMP = 1, the top 4KB sector becomes unprotected while the rest of the array becomes
read-only. For more information, refer to Table and Table 6-5 below. The default setting is CMP = 0.
Erase/Program Suspend Status (SUS)
The Suspend Status bit (SUS) is a read only bit in the status register (S15) that is set to 1 after executing an Erase/Program
Suspend (75h) instruction
down power up cycle
. The SUS status bit is cleared to 0 by Erase/Program Resume (7Ah) instruction as well as a power
,
-
.
AT25QL641
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Table 6-4. Status Register Memory Protection (CMP = 0)
Status Register Bits
Memory Protection
SEC
TB
X
BP2
BP1
BP0
Sector(s)
Address Range
NONE
Density
Portion of Memory
NONE
X
0
0
0
0
0
0
0
1
0
1
NONE
NONE
0
126 and 127 7E0000h - 7FFFFFh 128 KB
124 thru 127 7C0000h - 7FFFFFh 256 KB
120 thru 127 780000h - 7FFFFFh 512 KB
Upper 1/64
Upper 1/32
0
0
0
0
0
0
0
0
0
0
0
0
X
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
0
1
1
1
0
0
0
1
1
1
1
0
0
0
1
0
0
0
1
1
0
0
1
0
1
1
0
0
1
1
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
1
0
1
X
1
0
1
X
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/64
Lower 1/32
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
112 thru 127 700000h - 7FFFFFh
1 MB
2 MB
4 MB
96 thru 127
64 thru 127
0 and 1
0 thru 3
0 thru 7
0 thru 15
0 thru 31
0 thru 63
0 thru 127
127
600000h - 7FFFFFh
400000h - 7FFFFFh
000000h - 01FFFFh 128 KB
000000h - 03FFFFh 256 KB
000000h - 07FFFFh 512 KB
000000h - 0FFFFFh
000000h - 1FFFFFh
000000h - 3FFFFFh
000000h - 7FFFFFh
7FF000h - 7FFFFFh
7FE000h - 7FFFFFh
7FC000h - 7FFFFFh
7F8000h - 7FFFFFh
000000h - 000FFFh
000000h - 001FFFh
000000h - 003FFFh
000000h - 007FFFh
1 MB
2 MB
4 MB
8 MB
4 KB
U – 1/2048 (Note 4)
U – 1/1024
U – 1/512
U – 1/256
L – 1/2048
L – 1/1024
L – 1/512
127
8 KB
127
16 KB
32 KB
4 KB
127
0
0
8 KB
0
16 KB
32 KB
0
L – 1/256
Note:
1.
X = Don’t care
L = Lower; U = Upper
2.
3.
If any Erase or Program instruction specifies a memory region that contains protected data portion, this instruction will
be ignored.
4.
Note 3 does not apply to this Status Register Bit setting. See Errata 1 in Appendix A for details.
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Table 6-5. Status Register Memory Protection (CMP = 1)
Status Register Bits
Memory Protection
SEC
X
0
TB
X
0
0
0
0
0
0
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
BP2
BP1
BP0
Sector(s)
0 thru 127
0 thru 125
0 and 121
0 thru 119
0 thru 111
0 thru 95
Address Range
Density
Portion of Memory
ALL
0
0
0
000000h - 7FFFFFh
8 MB
0
0
1
000000h – 7DFFFFh 8,064 KB
000000h – 7BFFFFh 7,936 KB
000000h – 77FFFFh 7,680 KB
000000h – 6FFFFFh 7,168 KB
Lower 63/64
Lower 31/32
Lower 15/16
Lower 7/8
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
000000h – 5FFFFFh
000000h – 3FFFFFh
6 MB
4 MB
Lower 3/4
0
1
1
0
0 thru 63
Lower 1/2
0
0
0
1
2 thru 127
4 and 127
8 thru127
16 thru 127
32 thru 127
64 thru 127
NONE
020000h - 7FFFFFh 8,064 KB
040000h - 7FFFFFh 7,936 KB
080000h - 7FFFFFh 7,680 KB
100000h - 7FFFFFh 7,168 KB
Upper 63/64
Upper 31/32
Upper 15/16
Upper 7/8
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
200000h - 7FFFFFh
400000h - 7FFFFFh
NONE
6 MB
4 MB
Upper 3/4
0
1
1
0
Upper 1/2
X
1
1
1
1
NONE
NONE
0
0
1
0 thru 127
0 thru 127
0 thru 127
0 thru 127
0 thru 127
0 thru 127
0 thru 127
0 thru 127
000000h - 7FEFFFh 8,188 KB
000000h - 7FDFFFh 8,184 KB
000000h - 7FBFFFh 8,176 KB
000000h - 7F7FFFh 8,160 KB
L – 2047/2048
L – 1023/1024
L – 511/512
L – 255/256
1
0
1
0
1
0
1
1
1
1
0
X
1
1
0
0
001000h - 7FFFFFh 8,188 KB U – 2047/2048 (Note 4)
1
0
1
0
002000h - 7FFFFFh 8,184 KB
004000h - 7FFFFFh 8,176 KB
008000h - 7FFFFFh 8,160 KB
U – 1023/1024
U – 511/512
1
0
1
1
1
1
0
X
U – 255/256
Note:
1.
X = don’t care
L = Lower; U = Upper
2.
3.
If any Erase or Program instruction specifies a memory region that contains protected data portion, this instruction will be ignored.
4.
Note 3 does not apply to this Status Register Bit setting. See Errata 2 in Appendix A for details.
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7.
Instructions
The SPI instruction set of the AT25QL641 consists of thirty eight basic instructions and the QPI instruction set of the
AT25QL641 consists of thirty one basic instructions that are fully controlled through the SPI bus (see Instruction Set
table). Instructions are initiated with the falling edge of Chip Select (CS). The first byte of data clocked into the input
pins (SI or I/O [3:0]) provides the instruction code. Data on the SI input is sampled on the rising edge of clock with
most significant bit (MSB) first.
Instructions are completed with the rising edge of edge CS. All read instructions can be completed after any clocked
bit. However, all instructions that Write, Program or Erase must complete on a byte (CS driven high after the full 8 bits
has been clocked) otherwise the instruction is terminated. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is being written, all
commands except for Read Register are ignored until the program or erase cycle has completed.
Table 7-1. Manufacturer and Device Identification
ID code
Instruction
Manufacturer ID
Device ID
Adesto
AT25QL641
SPI / QPI
64M
1Fh
16h
43h
17h
90h, 92h, 94h, 9Fh
90h, 92h, 94h, ABh
Memory Type ID
Capacity Type ID
9Fh
9Fh
7.1
Instruction Tables
(1)
Table 7-2. Instruction Set Table 1 (SPI Instructions)
Instruction Byte
Clock Number
Write Enable
0
1
2
3
4
5
0 - 7
06h
50h
8 - 15
16 - 23
24 - 31
32 - 39
40 - 47
Write Enable
(for volatile Status registers)
Write Disable
Read Status Register 1
Read Status Register 2
Write Status Register 1
Write Status Register 2
Read Data
04h
05h
SR7:SR0 (2)
SR15:SR8(2)
SR7:SR0
SR15:SR8
A23:A16
35h
01h
SR15:SR8
31h
03h
A15:A8
A15:A8
A15:A8
A7:A0
A7:A0
A7:A0
D7:D0
Dummy
D7:D0 (3)
Fast Read Data
0Bh
02h
A23:A16
D7:D0
Page Program
A23:A16
Enable QPI
38h
Block Erase (4 KB)
Block Erase (32 KB)
Block Erase (64 KB)
Chip Erase
20h
A23:A16
A23:A16
A23:A16
A15:A8
A15:A8
A15:A8
A7:A0
A7:A0
A7:A0
52h
D8h
60h/7Ch
AT25QL641
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14
Table 7-2. Instruction Set Table 1 (SPI Instructions) (Continued) (1)
Instruction Byte
Clock Number
0
1
2
3
4
5
0 - 7
75h
7Ah
B9h
ABh
8 - 15
16 - 23
24 - 31
32 - 39
40 - 47
Erase/Program Suspend
Erase/Program Resume
Deep Power Down
Release from Deep Power
Down/Device ID
Dummy
Dummy
Dummy
D7:D0(2)
Read Manufacturer ID (4)
Read JEDEC ID
90h
9Fh
66h
99h
B1h
C1h
2Bh
2Fh
5Ah
00h
00h
00h or 01h
D7:D0
MID7:MID0
DID7:DID0
MID7:MID0
D7:D0
Reset Enable
Reset
Enter Secured OTP
Exit Secured OTP
Read Security Register
Write Security Register
SC7:SC0 (5)
A23:A16
Read Serial Flash
A15:A8
A7:A0
Dummy
D7:D0
Discovery Parameters
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being read from the device on the I/O pin.
2. SR = status register, The Status Register contents and Device ID repeats continuously until CS terminates the instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security Register, up to 256 bytes of data input. If more
than 256 bytes of data are sent to the device, the addressing will wrap to the beginning of the page and overwrite previously sent data.
4. See Manufacturer and Device Identification table for Device ID information.
5. SC = security register.
Table 7-3. Instruction Set Table 2 (Dual SPI Instructions)
Instruction Byte
Clock Number
0
1
2
3
4
5
0 - 7
3Bh
BBh
8 - 15
16 - 23
A15:A8
24 - 31
A7:A0
32 - 39
Dummy
40 - 47
D7:D0 (1)
Fast Read Dual Output
Fast Read Dual I/O
A23:A16
A23:A8 (2)
A7:A0,
D7:D0....(1)
M7:M0(2)
Read Manufacturer ID (3)
92h
0000h
(00h, xxxx) or MID7:MID0
01h, xxxx)
DID7:DID0(1)
1. Dual Output data: I/O0 = (D6, D4, D2, D0), I/O1 = (D7, D5, D3, D1)
2. Dual input address:
I/O0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0
I/O1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1
3. See Manufacturer and Device Identification table for Device ID information.
AT25QL641
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Table 7-4. Instruction Set Table 3 (Quad SPI Instructions)
Instruction Byte
Clock Number
0
1
2
3
4
5
0 - 7
6Bh
EBh
8 - 15
16 - 23
A15:A8
24 - 31
A7:A0
32 - 39
Dummy
40 - 47
D7:D0 (1)
Fast Read Quad Output
Fast Read Quad I/O
A23:A16
A23:A0,
(xxxx,
D7:D0....(1)
M7:M0 (2)
D7:D0...) (3)
Quad Page Program
33h
94h
A23:A0
(D7:D0, ...)(1)
Read Quad Manufacturer ID (4)
00_0000h, xx
or
(xxxx,
MID7:MID0)
(xxxx,
00_00001h, xx
DID7:DID0)(3)
Fast Read Quad I/O
Set Burst with Wrap
EBh
77h
A23:A0
(xx, D7:D0)
D7:D0(1)
M7:M0(2)
xxxxxx,
W6:W4 (5)
1. Quad Input/ Output Data
I/O0 = (D4, D0...)
I/O1 = (D5, D1...)
I/O2 = (D6, D2...)
I/O3 = (D7, D3...)
2. Quad Input Address
I/O0 = A20, A16, A12, A8, A0, M4, M0
I/O1 = A21, A17, A13, A9, A1, M5, M1
I/O2 = A22, A18, A14, A10, A2, M6, M2
I/O3 = A23, A19, A15, A11, A3, M7, M3
3. Fast Read Quad I/O Data Output
I/O0 = (x, x, x, x, D4, D0...)
I/O1 = (x, x, x, x, D5, D1...)
I/O2 = (x, x, x, x, D6, D2...)
I/O3 = (x, x, x, x, D7, D3...)
4. See Manufacturer and Device Identification table for Device ID information.
5. Set Burst With Wrap
I/O0 = x, x, x, x, x, x, W4, x
I/O1 = x, x, x, x, x, x, W5, x
I/O2 = x, x, x, x, x, x, W6, x
I/O3 = x, x, x, x, x, x, W7, x
Table 7-5. Instruction Set Table 4 (QPI Instructions)
Instruction Byte (1)
Clock Number
Write Enable
0
1
2
3
4
5
6
7
8
0, 1
06h
50h
2, 3
4, 5
6, 7
8, 9
10, 11
12, 13
14, 15 16, 17
Write Enable
(for volatile Status registers)
Write Disable
04h
Read Status Register 1
05h (SR7:SR0)(2)
AT25QL641
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16
Table 7-5. Instruction Set Table 4 (QPI Instructions) (Continued)
Instruction Byte (1)
0
1
2
3
4
5
6
7
8
Clock Number
0, 1
35h
2, 3
4, 5
6, 7
8, 9
10, 11
12, 13
14, 15 16, 17
Read Status Register 2
(SR15:SR8)
(2)
Write Status Register 1(2)
Write Status Register 2
01h
31h
0Bh
(SR7:SR0) (SR15:SR8)
(SR15:SR8)
Fast Read Data up to 80
MHz
A23:A16
A23:A16
A23:A16
A15:A8
A15:A8
A15:A8
A7:A0 Dummy Dummy (D7:D0)
up to 104
MHz
A7:A0 Dummy Dummy Dummy (D7:D0)
Page Program
02h
A7:A0 (D7:D0)
(3)
Block Erase (4 KB)
Block Erase (32 KB)
Block Erase (64 KB)
Chip Erase
20h
52h
A23:A16
A23:A16
A23:A16
A15:A8
A15:A8
A15:A8
A7:A0
A7:A0
A7:A0
D8h
60h/7Ch
75h
Erase/Program Suspend
Erase/Program Resume
Deep Power Down
7Ah
B9h
Release from Deep
Power Down
ABh
Read Manufacturer/
Device ID (4)
90h
00h
00h
00h or
01h
(MID7:
MID0)
(DID7:
DID0)
Read JEDEC ID
9Fh (MID7:MID0) (D7:D0)
(D7:D0)
(Cap)
(Mfg ID)
(Mem Typ)
Enter Secured OTP
Exit Secured OTP
B1h
C1h
Read Security Register
Write Security Register
2Bh (SC7:SC0)(5)
2Fh
Fast Read
Quad I/O
up to 80
MHz
EBh
A23:A16
A23:A16
A23:A16
A15:A8
A15:A8
A15:A8
A7:A0 (M7:M0) Dummy (D7:D0)
up to 104
MHz
A7:A0 (M7:M0) Dummy Dummy (D7:D0)
A7:A0 (M7:M0) Dummy Dummy Dummy (D7:D0)
up to 133
MHz
Reset Enable
66h
99h
FFh
Reset
Disable QPI
AT25QL641
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17
Table 7-5. Instruction Set Table 4 (QPI Instructions) (Continued)
Instruction Byte (1)
0
1
2
3
4
5
6
7
8
Clock Number
0, 1
0Ch
2, 3
4, 5
6, 7
8, 9
10, 11
12, 13
14, 15 16, 17
Burst Read with up to 80
A23:A16
A15:A8
A7:A0 Dummy Dummy (D7:D0)
Wrap
MHz
up to 104
MHz
A23:A16
A23:A16
A15:A8
A15:A8
A7:A0 Dummy Dummy Dummy (D7:D0)
up to 133
MHz
A7:A0 Dummy Dummy Dummy Dummy (D7:D0)
Set Read Parameter
Quad Page Program
C0h
33h
P7:P0
A23:A16
A15:A8
A7:A0 (D7:D0)
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being read from the device on the I/O pin.
2. SR = Status Register. The Status Register contents and Device ID will repeat continuously until CS terminates the instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security Register, up to 256 bytes of data input. If more
than 256 bytes of data are sent to the device, the addressing will wrap to the beginning of the page and overwrite previously sent data.
4. See Manufacturer and Device Identification table for Device ID information.
5. SC = Security Register.
7.2
Write Enable (06h)
Write Enable instruction is for setting the Write Enable Latch (WEL) bit in the Status Register
.
The WEL bit must be set prior to
CS goes low prior to the
every Program Erase and Write Status Register instruction To enter the Write Enable instruction,
,
.
instruction “06h” into Data Input (SI) pin on the rising edge of SCK, and then driving CS high
.
Figure 7-1. Write Enable Instruction for SPI Mode (left) and QPI Mode (right)
7.3
Write Enable for Volatile Status Register (50h)
This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting
for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. To write the
volatile values into the Status Register bits, the Write Enable for Volatile Status Register (50h) instruction must be issued
prior to a Write Status Register (01h) instruction. Write Enable for Volatile Status Register instruction (Figure 7-2) does
not set the Write Enable Latch (WEL) bit. Once Write Enable for Volatile Status Register is set, a Write Enable
instruction should not have been issued prior to setting Write Status Register instruction (01h or 31h). When Write
AT25QL641
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18
Enable for Volatile Status Register (50h) is set in QPI Mode, the SUS bit (S15) and Reserved bits (S13, S12, S11 and
S10) of Status Register-2 must be driven to high after Write Status Register instruction (01h). Once Read Status Register
(05h or 35h) is issued the read values of SUS bit (S15) and Reserved bits (S13, S12, S11 and S10) of the Status
Register-2 are ignored.
Figure 7-2. Write Enable for Volatile Status Register Instruction for SPI Mode (left) and QPI Mode (right)
7.4
Write Disable (04h)
The Write Disable instruction is used to reset the Write Enable Latch (WEL) bit in the Status Register
Disable instruction CS goes low prior to the instruction “04h” into Data Input (SI) pin on the rising edge of SCK, and then
driving CS high The WEL bit is automatically reset write- disable status of “0” after power up and upon completion of the
every Program Erase and Write Status Register instructions
. To enter the Write
,
.
-
,
.
Figure 7-3. Write Disable Instruction for SPI Mode (left) and QPI Mode (right)
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7.5
Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions are to read the Status register. The Read Status Register instructions can be
executed at any time (even in the Program/Erase/Write Status Register and Write Security Register conditions). It is
recommended to check the BUSY bit before sending a new instruction when a Program, Erase, Write Status
Register or Write Status Register operation is in progress.
The instruction is entered by driving CS low and sending the instruction code “05h” for Status Register-1 or “35h” for Status
Register-2 into the SI pin on the rising edge of SCK. The status register bits are then shifted out on the SO pin at the falling
edge of SCK with most significant bit (MSB) first as shown in (Figure 7-4 and Figure 7-5). The Status Register can be read
continuously. The instruction is completed by driving CS high.
Figure 7-4. Read Status Register Instruction (SPI Mode)
Figure 7-5. Read Status Register Instruction (QPI Mode)
7.6
Write Status Register (01h)
The Write Status Register instruction is us ed to write only the non-volatile Status Register-1 bit SRP0, and Status
Register-2 bits QE and SRP1. All other Status Register bit locations are read-only and are not affected by the Write
Status Register instruction.
A Write Enable instruction must previously have been issued prior to setting Write Status Register Instruction (Status
Register bit WEL must equal 1). Once the write is enabled, the instruction is entered by driving CS low, sending the
instruction code, and then writing the status register data byte as illustrated in Figure 7-6 and Figure 7-7.
AT25QL641
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The CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not done the Write
Status Register instruction will not be executed. If CS is driven high after the eighth clock, the CMP, QE and SRP1
(Status Register 2) bits are cleared to 0. After CS is driven high, the self- timed Write Status Register cycle commences
for a time duration of tW (see Table 8-7, AC Electrical Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be accessed to
check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a 0 when the
cycle is finished and ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable Latch
(WEL) bit in Status Register is cleared to 0.
Figure 7-6. Write Status Register Instruction (SPI Mode)
Figure 7-7. Write Status Register Instruction (QPI Mode)
7.7
Write Status Register-2 (31h)
The Write Status Register-2 instruction is used to write only non-volatile Status Register-2 bits CMP, QE and SRP1.
A Write Enable instruction must previously have been issued prior to setting Write Status Register Instruction (Status
Register bit WEL must equal 1). Once write is enabled, the instruction is entered by driving CS low, sending the
instruction code, and then writing the status register data byte as illustrated in Figure 7-8 and Figure 7-9.
Using the Write Status Register-2 (31h) instruction
different instruction
, software can individually access each one-byte Status register via a
.
AT25QL641
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21
Figure 7-8. Write Status Register-2 Instruction (SPI Mode)
Figure 7-9. Write Status Register-2 Instruction (QPI Mode)
7.8
Read Data (03h)
The Read Data instruction is to read data out from the device
.
The instruction is initiated by driving the CS pin low and then
After the address is received the
sending the instruction code “03h” with following a 24 bit address (A23 - A0) into the SI pin
-
.
,
data byte of the addressed memory location is shifted out on the SO pin at the falling edge of SCK with the most significant bit
(MSB) first. The address is automatically incremented to the next higher address after byte of data is shifted out allowing for a
continuous stream of data
continues The instruction is completed by driving CS high. The Read Data instruction sequence is shown in Figure 7-10. If a
Read Data instruction is issued while an Erase Program or Write Status Register cycle is in process (BUSY = 1) the instruction
is ignored and does not have any effects on the current cycle
maximum of f (see Table 8-7, AC Electrical Characteristics).
. This means that the entire memory can be accessed with a single instruction as long as the clock
.
,
.
The Read Data instruction allows clock rates from D.C to a
R
AT25QL641
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22
Figure 7-10. Read Data Instruction
7.9
Fast Read (0Bh)
The Fast Read instruction is high speed reading mode that it can operate at the highest possible frequency of FR
. The address
is latched on the rising edge of the SCK. After the 24
Figure 7-11 The dummy clocks means the internal circuits require time to set up the initial address
the data value on the SO pin is a “don’t care” Data of each bit shifts out on the falling edge of SCK.
-
bit address
,
this is accomplished by adding “dummy” clocks as shown in
.
.
During the dummy clocks,
.
Figure 7-11. Fast Read Instruction (SPI Mode)
7.10 Fast Read in QPI Mode
When QPI mode is enabled, the number of dummy clock is configured by the “Set Read Parameters (C0h)” instruction to
accommodate wide range applications with different needs for either maximum Fast Read frequency or minimum data
access latency. Depending on the Read Parameter Bit P[4] and P[5] setting, the number of dummy clocks can be
configured as either 4, or 6 or 8. The default number of dummy clocks upon power up or after a Reset instruction is 4.
Refer to Figure 7-12 and Figure 7-13 below.
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Figure 7-12. Fast Read instruction (QPI Mode, 80 MHz)
Figure 7-13. Fast Read instruction (QPI Mode, 104 MHz)
7.11 Fast Read Dual Output (3Bh)
By using two pins (I/O
0
and I/O
1
, instead of just I/O
0
) The Fast Read Dual Output instruction allows data to be transferred
,
from the AT25QL641 at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for application that cache code-segments to RAM for execution.
The Fast Read Dual Output instruction can operate at the highest possible frequency of F
Characteristics). After the 24 bit address, this is accomplished by adding eight “dummy” clocks as shown in Figure 7-14. The
dummy clocks allow the internal circuits additional time for setting up the initial address. During the dummy clocks the data
value on the SO pin is a “don’t care”. However
the I/O pin should be high impedance prior to the falling edge of the first data
out clock
R
(see Table 8-7, AC Electrical
-
,
,
0
-
.
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Figure 7-14. Fast Read Dual Output instruction (SPI Mode)
7.12 Fast Read Quad Output (6Bh)
By using four pins (I/O
0
, I/O
1
, I/O
2
, and I/O
3
), the ‘Fast Read Quad Output’ instruction allows data to be transferred from the
AT25QL641 at four times the rate of standard SPI devices. A Quad enable of Status Register-2 must be executed before
the device accepts the Fast Read Quad Output instruction (Status register bit QE must equal 1).
The ‘Fast Read Quad Output’ instruction can operate at the highest possible frequency of F (see Table 8-7, AC
R
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in
Figure 7-15. The dummy clocks allow the internal circuits additional time for setting up the initial address. During the
dummy clocks, the data value on the SO pin is a “don’t care”. However, the I/O
pin should be high-impedance prior to
0
the falling edge of the first data out clock.
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Figure 7-15. Fast Read Quad Output Instruction (SPI Mode)
7.13 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O instruction reduces cycle overhead through double access using two I/O pins: I/O
0
and I/O .
1
Continuous read mode
The Fast Read Dual I/O instruction can further reduce cycle overhead through setting the Mode bits (M7-0) after the
input Address bits (A23-0). The upper nibble of the Mode (M7-4) controls the length of the next Fast Read Dual I/O
instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0)
are don’t care (“X”), However, the I/O pins should be high-impedance prior to the falling edge of the first data out clock.
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Dual I/O instruction (after CS is raised and then lowered) does
not require the instruction (BBh) code, as shown in Figure 7-16 and Figure 7-17. This reduces the instruction sequence
by eight clocks and allows the address to be immediately entered after CS is asserted low. If Mode bits (M7-0) are any
value other “Ax” hex, the next instruction (after CS is raised and then lowered) requires the first byte instruction code,
thus returning to normal operation. A mode bit reset can be used to reset the mode bits (M7-0) before issuing
normal instructions.
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Figure 7-16. Fast Read Dual I/O Instruction (initial instruction or previous M7-0 ≠ Axh)
Figure 7-17. Fast Read Dual I/O Instruction (previous M7-0= Axh)
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7.14 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O instruction reduces cycle overhead through quad access using four I/O pins: I/O
0
, I/O , I/O2, and
1
I/O3. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast read Quad I/O Instruction.
Continuous read mode
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the Mode bits (M7-0) with
following the input address bits (A23-0), as shown in Figure 7-18. The upper nibble of the mode (M7-4) controls the
length of the next ‘Fast Read Quad I/O’ instruction through the inclusion or exclusion of the first byte instruction code.
The lower nibble bits of the Mode (M3-0) are don’t care (“X”). However, the I/O pins should be high-impedance prior to
the falling edge of the first data out clock.
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Read Quad I/O instruction (after CS is raised and then
lowered) does not require the EBh instruction code, as shown in Figure 7-19. This reduces the instruction sequence by
eight clocks and allows the address to be immediately entered after CS is asserted low. If the Mode bits (M7-0) are any
value other than “Ax” hex, the next instruction (after CS is raised and then lowered) requires the first byte instruction
code, thus retuning normal operation. A Mode Bit Reset can be used to reset Mode Bits (M7-0) before issuing normal
instructions.
Figure 7-18. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 ≠ Axh, SPI mode)
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Figure 7-19. Fast Read Quad I/O Instruction (previous M7-0 = Axh, SPI mode)
Wrap Around in SPI mode
The Fast Read Quad I/O instruction can also be used to access specific portion within a page by issuing a ‘Set Burst
with Wrap’ (77h) instruction prior to a ‘Fast Read Quad I/O’ (EBh) instruction. The ‘Set Burst with Wrap’ (77h)
instruction can either enable or disable the “Wrap Around” feature for the following ‘Fast Read Quad I/O’ instruction.
When “Wrap Around” is enabled, the data being accessed can be limited to an 8/16/32/64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the
8/16/32/64-byte section, the output wraps around to the beginning boundary automatically until CS is pulled high to
terminate the instruction.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the
cache afterwards within a fixed length (8/16/32/64 bytes) of data without issuing multiple read instructions. (Please
refer to Section 7.32 Set Burst with Wrap).
Fast Read Quad I/O in QPI mode
When QPI mode in enabled, the number of dummy clocks is configured by the ‘Set Read Parameters’ (C0h) instruction
to accommodate a wide range applications with different needs for either maximum Fast Read frequency or minimum
data access latency. Depending on the state of read parameter bits P[4] and P[5], the number of dummy clocks can be
configured as either 4, 6, or 8. The default number of dummy clocks upon power up or after a Reset (99h) instruction is
4.
The “Continuous Read Mode” feature is also available in QPI mode for Fast Read Quad I/O instruction. In QPI mode, the
“Continuous Read Mode” bits M7-0 are also considered as dummy clocks. In the default setting, the data output follows
the Continuous Read Mode bits immediately.
The “Wrap Around” feature is not available in QPI mode for Fast Read Quad I/O instruction. To perform a read operation
with fixed data length wrap around in QPI mode, a ‘Burst Read with Wrap’ (0Ch) instruction must be used. For more
information, refer to Section 7.33, Burst Read with Wrap (0Ch).
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Figure 7-20. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 ≠ Axh, QPI mode, 80 MHz)
Figure 7-21. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 ≠ Axh, QPI mode, 133 MHz)
7.15 Page Program (02h)
The Page Program instruction is for programming the memory to be “0”. A Write Enable instruction must be issued
before the device accept the Page Program Instruction (Status Register bit WEL= 1). After the Write Enable (WREN)
instruction has been decoded, the device sets the Write Enable Latch (WEL). The instruction is entered by driving the
CS pin low and then sending the instruction code “02h” with following a 24-bits address (A23-A0) and at least one data
byte, into the SI pin. The CS pin must be driven low for the entire time of the instruction while data is being sent to the
device. (Please refer to Figure 7-22 and Figure 7-23).
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set
to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining page length, the addressing
wraps around to the beginning of the page. In some cases, less than 256 bytes (a partial page) can be programmed
without having any effect on other bytes within the same page. One condition to perform a partial page program is that
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the number of clocks cannot exceed the remaining page length. If more than 256 bytes are sent to the device the
addressing wraps around to the beginning of the page and overwrites previously sent data.
The CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done, the Page
Program instruction is not executed. After CS is driven high, the self-timed ‘Page Program’ instruction commences for
a time duration of tPP (see Table 8-7, AC Electrical Characteristics). While the page program operation is in progress, the
‘Read Status Register’ instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1
during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other
instructions again. When the BUSY bit is asserted, the Write Enable Latch (WEL) bit in the Status Register is cleared to
0.
Figure 7-22. Page Program Instruction (SPI Mode)
Figure 7-23. Page Program Instruction (QPI Mode)
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7.16 Quad Page Program (33h)
The ‘Quad Page Program’ instruction is to program the memory as being “0” at previously erased memory areas. The ‘Quad
Page Program’ requires four pins: I/O0, I/O1, I/O and I/O3, as address and data inputs, which can improve performance. A
2
system using a faster clock speed does not get more benefit for the Quad Page Program as the required internal page program
time is far more than the time data clock-in.
To use ‘Quad Page Program’ instruction, the Quad Enable bit must be set. A Write Enable instruction must be executed
before the device accepts the ‘Quad Page Program’ instruction (Status Register-1, WEL = 1). The instruction is initiated
by driving the CS pin low then sending the instruction code “33h” with following a 24-bit address (A23-A0) and at least
one data, into the I/O pins. The CS pin must be held low for the entire length of the instruction while data is being sent to
the device. All other functions of ‘Quad Page Program’ instruction are the same as the standard ‘Page Program’
instruction. (Please refer to Figure 7-24 and Figure 7-25).
Figure 7-24. Quad Page Program Instruction (SPI mode)
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Figure 7-25. Quad Page Program Instruction (QPI mode)
7.17 4 Kbyte Block Erase (20h)
The ‘Block Erase’ instruction is to erase the data of the selected block as being “1”. The instruction is used for 4K-byte
block. Prior to the ‘Block Erase’ instruction, the ‘Write Enable’ (06h) instruction must be issued. The instruction is
initiated by driving the CS pin low and shifting the instruction code “20h” followed a 24-bit block address (A23-A0) as
shown in Figure 7-26 and Figure 7-27. The CS pin must go high after the eighth bit of the last byte has been latched in,
otherwise the Block Erase instruction is not executed. After CS goes high, the self-timed ‘Block Erase’ instruction
commences for a time duration of tSE (see Table 8-7, AC Electrical Characteristics).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be accessed for
checking the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-26. Block Erase Instruction (SPI Mode)
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Figure 7-27. Block Erase Instruction (QPI Mode)
7.18 32 Kbyte Block Erase (52h)
The 32 KB ‘Block Erase’ instruction is used for a 32 Kbyte block erase operation. Prior to the ‘Block Erase’ Instruction,
a ‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the
instruction code “52h” followed a 24-bit block address (A23-A0). Refer to Figure 7-28 and Figure 7-29 below. The CS
pin must go high after the eighth bit of the last byte has been latched in, otherwise the Block Erase instruction is not
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE1 (see Table
8-7, AC Electrical Characteristics).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read the
status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-28. 32KB Block Erase Instruction (SPI Mode)
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Figure 7-29. 32KB Block Erase Instruction (QPI Mode)
7.19 64 Kbyte Block Erase (D8h)
The 64 KB ‘Block Erase’ instruction is to erase a 64 Kbyte block of memory. Prior to the Block Erase Instruction, a
‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the
instruction code “D8h” followed a 24-bit block address (A23-A0). Refer to Figure 7-30 and Figure 7-31 below. The CS
pin must go high after the eighth bit of the last byte has been latched in, otherwise, the Block Erase instruction is not
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE2 (see Table
8-7, AC Electrical Characteristics).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read
the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-30. 64KB Block Erase Instruction (SPI Mode)
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Figure 7-31. 64KB Block Erase Instruction (QPI Mode)
7.20 Chip Erase (C7h / 60h)
The ‘Chip Erase’ instruction sets all bits in the memory to 1. Prior to the ‘Chip Erase’ instruction, a ‘Write Enable’ (06h)
instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the instruction code “C7h” or
“60h”. Refer to Figure 7-32 below. The CS pin must go high after the eighth bit of the last byte has been latched in,
otherwise, the Chip Erase instruction is not executed. After CS is driven high, the self-timed Chip Erase instruction
commences for a duration of tCE (see Table 8-7, AC Electrical Characteristics).
While the chip erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be accessed to check
the status of the BUSY bit. The BUSY bit is a 1 during the chip erase operation and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-32. Chip Erase Instruction for SPI Mode (left) and QPI Mode (right)
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7.21 Erase / Program Suspend (75h)
The ‘ Erase/Program Suspend’ instruction allows the system to interrupt a Block Erase operation, or a Page
Program, Quad Data Input Page Program, Quad Page Program operation.
The Erase Suspend is valid only during the Block or Block erase operation. The Write Status Register-1 (01h), Write
Status Register-2 (31h) instruction and Erase instructions (20h, 52h, D8h, C7h, 60h) are not allowed during an Erase
Suspend operation. During the Chip Erase operation, the Erase Suspend instruction is ignored.
Program Suspend is valid only during the Page Program, Quad Data Input Page Program or Quad Page Program
operation. The Write Status Register-1 (01h), Write Status Register-2 (31h) instruction, Program instructions (02h and
33h) and Erase Instructions (20h, 52h, D8h, C7h, 60h) are not allowed during Program Suspend.
The Erase/Program Suspend instruction “75h” is accepted by the device only if the SUS bit in the Status Register equals
to 0 and the BUSY bit equals to 1 while a Block Erase or a Page Program operation is on-going. If the SUS bit equals
to 1 or the BUSY bit equals to 0, the Suspend instruction is ignored by the device. A maximum time of “tSUS” (see Table
8-7, AC Electrical Characteristics) is required to suspend the erase or program operation. After Erase/Program Suspend,
the SUS bit in the Status Register is set (0 to 1) immediately and the BUSY bit in the Status Register is cleared (1 to 0)
within “tSUS”. For a previously resumed Erase/Program operation, it is also required that the Suspend instruction “75h” is
not issued earlier than a minimum of time of “tSUS” following the preceding Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state resets the device and release the suspend state. The
SUS bit in the Status Register also resets to 0. The data within the page, or block that was being suspended may
become corrupted. It is recommended for the user to implement system design techniques against the accidental
power interruption and preserve data integrity during erase/program suspend state. (Please refer to Figure 7-33 and
Figure 7-34).
Figure 7-33. Erase Suspend Instruction (SPI Mode)
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Figure 7-34. Erase Suspend Instruction (QPI Mode)
7.22 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” is to restart the Block Erase operation or the Page Program operation
upon an Erase/Program Suspend. The Resume instruction “7Ah” is accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After the instruction is issued, the SUS bit is cleared
immediately, the BUSY bit is set within 200 ns, and the block completes the erase operation, or the page completes the
program operation. If the SUS bit equals to 0 or the BUSY bit equals 1, the Resume instruction “7Ah” is ignored by the
device.
Resume instruction cannot be accepted if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be issued within a
minimum of time of “tSUS” following a previous Resume instruction. Refer to Figure 7-35 and Figure 7-36 below.
Figure 7-35. Erase / Program Resume Instruction (SPI Mode)
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Figure 7-36. Erase / Program Resume Instruction (QPI Mode)
7.23 Deep Power Down (B9h)
Executing the Deep Power Down instruction is the best way to put the device in the lowest power consumption. The
Deep Power Down instruction reduces the standby current (from ICC1 to ICC2, as specified in Table 8-7, AC Electrical
Characteristics). The instruction is entered by driving the CS pin low with following the instruction code “B9h”. Refer to
Figure 7-37 and Figure 7-38 below.
The CS pin must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in);
otherwise, the Deep Power Down instruction is not executed. After CS goes high, it requires a delay of tDP and the Deep
Power Down mode is entered. While in the Deep Power Down state, the ‘Release Deep Power Down / Device ID’ (ABh)
instruction, which restores the device to normal operation, will be recognized. All other instructions are ignored, including
the ‘Read Status Register’ (05h) instruction, which is always available during normal operation.
Figure 7-37. Deep Power Down Instruction (SPI Mode)
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Figure 7-38. Deep Power Down Instruction (QPI Mode)
7.24 Release Deep Power Down / Device ID (ABh)
The ‘Release Deep Power Down / Device ID’ instruction is a multi-purpose instruction. It can be used to release the
device from the Deep Power Down state and also obtain the device identification (ID).
The instruction is issued by driving the CS pin low, sending the instruction code “ABh” and driving CS high as shown in
Figure 7-39 and Figure 7-40. The ‘Release from Deep Power Down’ instruction requires the time duration of tRES1 (see
Table 8-7, AC Electrical Characteristics). The CS pin must keep high during the tRES1 time duration.
The Device ID can be read during SPI mode only. In other words, Device ID feature is not available in QPI mode for Release
Deep Power Down/Device ID instruction. To obtain the Device ID in SPI mode, the instruction is initiated by driving the CS
pin low and sending the instruction code “ABh” with following 3-dummy bytes. The Device ID bits are then shifted on
the falling edge of SCK with most significant bit (MSB) first as shown in Figure 7-41. After CS is driven high it must
keep high for a time duration of tRES2 (See Table 8-7, AC Electrical Characteristics). The Device ID can be read
continuously. The instruction is completed by driving CS high.
If the ‘Release from Deep Power Down /Device ID’ instruction is issued while an Erase, Program or Write cycle is in process
(when BUSY equals 1) the instruction is ignored and does not have any effects on the current cycle.
Figure 7-39. Release Power Down Instruction (SPI Mode)
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Figure 7-40. Release Power Down Instruction (QPI Mode)
Figure 7-41. Release Power Down / Device ID Instruction (SPI Mode)
7.25 Read Manufacturer / Device ID Dual I/O (90h)
The ‘Read Manufacturer/ Device ID Dual I/O’ instruction provides both the JEDEC assigned manufacturer ID and the
specific device ID.
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Dual I/O instruction. The instruction is
initiated by driving the CS pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (16h) are shifted out on the falling edge of
SCK with most significant bit (MSB) first as shown in Figure 7-42 and Figure 7-43. If the 24-bit address is initially set to
000001h, the Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be
read continuously, alternating from one to the other. The instruction is completed by driving CS high.
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Figure 7-42. Read Manufacturer/ Device ID Instruction (SPI Mode)
Figure 7-43. Read Manufacturer/ Device ID Instruction (QPI Mode)
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7.26 Read Manufacturer / Device ID Dual I/O (92h)
The Read Manufacturer/ Device ID Dual I/O instruction provides both the JEDEC assigned manufacturer ID and the
specific device ID.
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Dual I/O instruction. The instruction is
initiated by driving the CS pin low and shifting the instruction code “92h” followed by a 24-bit address (A23-A0) of
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (17h) are shifted out on the falling edge of
SCK with most significant bit (MSB) first as shown in Figure 7-44. If the 24-bit address is initially set to 000001h the
Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read
continuously, alternating from one to the other. The instruction is completed by driving CS high.
Figure 7-44. Read Dual Manufacturer/ Device ID Dual I/O Instruction (SPI Mode)
7.27 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer/ Device ID Quad I/O instruction provides both the JEDEC assigned manufacturer ID and the
specific device ID.
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Quad I/O instruction. The instruction is
initiated by driving the CS pin low and shifting the instruction code “94h” followed by a 24-bit address (A23-A0) of
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (17h) are shifted out on the falling edge of
SCK with most significant bit (MSB) first as shown in Figure 7-45. If the 24-bit address is initially set to 000001h the
Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read
continuously, alternating from one to the other. The instruction is completed by driving CS high.
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Figure 7-45. Read Quad Manufacturer/ Device ID Quad I/O instruction (SPI Mode)
7.28 JEDEC ID (9Fh)
For compatibility reasons, the AT25QL641 provides several instructions to electronically determine the identity of the
device. The Read JEDEC ID instruction is compliant with the JEDEC standard for SPI compatible serial Flash memories
that was adopted in 2003. The instruction is entered by driving the CS pin low with following the instruction code “9Fh”.
JEDEC assigned Manufacturer ID byte for Adesto (1Fh) and two Device ID bytes, Memory Type (ID15-ID8) and
Capacity (ID7-ID0) are then shifted out on the falling edge of SCK with most significant bit (MSB) first shown in Figure
7-46 and Figure 7-47. For memory type and capacity values refer to Manufacturer and Device Identification table. The
JEDEC ID can be read continuously. The instruction is terminated by driving CS high.
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Figure 7-46. Read JEDEC ID Instruction (SPI Mode)
Figure 7-47. Read JEDEC ID Instruction (QPI Mode)
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7.29 Enable QPI (38h)
The AT25QL641 supports both the Standard/Dual/Quad Serial Peripheral interface (SPI) and the Quad Peripheral
Interface (QPI) modes. However, SPI mode and QPI mode cannot be used at the same time. Enable QPI instruction is
the only way to switch the device from SPI mode to QPI mode.
In order to switch the device to QPI mode, the Quad Enable (QE) bit in Status Register 2 must be set to 1 first, and an
Enable QPI instruction must be issued. If the Quad Enable (QE) bit is 0, the Enable QPI instruction is ignored and the
device remains in SPI mode.
After power-up, the default state of the device is SPI mode. See the instruction set Table 7-2 for all the commands
supported in SPI mode and the instruction Set Table 7-5 for all the instructions supported in QPI mode.
When the device is switched from SPI mode to QPI mode, the existing write enable and program/erase suspend status,
and the wrap length setting remains unchanged.
Figure 7-48. Enable QPI Instruction (SPI Mode only)
7.30 Disable QPI (FFh)
By issuing Disable QPI (FFh) instruction, the device is reset SPI mode. When the device is switched from QPI mode to
SPI mode, the existing Write Enable Latch (WEL) and Program/Erase Suspend status, and the Wrap Length setting
remains unchanged.
Figure 7-49. Disable QPI Instruction for QPI Mode
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7.31 Word Read Quad I/O (E7h)
The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XiP) directly
from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Word Read Quad I/O
instruction. The lowest Address bit (A0) must equal 0 and only two dummy clocks are required prior to the data output.
Continuous Read Mode
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 7-50. The upper nibble of the (M7-4)
controls the length of the next ‘Word Read Quad I/O’ instruction through the inclusion or exclusion of the first byte
instruction code. The lower nibble bits of the (M[3:0]) are don’t care (“X”). However, the I/O pins should be high-
impedance prior to the falling edge of the first data out clock.
If the continuous read mode bits M[7-4] = Ah, then the next ‘Fast Read Quad I/O’ instruction (after CS is raised and then
lowered) does not require the E7h instruction code, as shown in Figure 7-51. This reduces the instruction sequence by
eight clocks and allows the Read address to be immediately entered after CS is asserted low. If the continuous read
mode bits M[7:4] do not equal to Ah (1010), the next instruction (after CS is raised and then lowered) requires the first
byte instruction code, thus returning to normal operation.
Figure 7-50. Word Read Quad I/O Instruction (Initial instruction or previous set M7-0 ≠ Axh, SPI Mode)
Figure 7-51. Word Read Quad I/O Instruction (Previous instruction set M7-0 = Axh, SPI Mode)
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47
Wrap Around in SPI mode
The ‘Word Read Quad I/O’ instruction can also be used to access a specific portion within a page by issuing a ‘Set
Burst with Wrap’ (77h) instruction prior to E7h. The ‘Set Burst with Wrap’ (77h) instruction can either enable or disable
the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is enabled, the output data starts at
the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section,
the output wraps around to the beginning boundary automatically until CS is pulled high to terminate the instruction.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache
afterwards within a fixed length (8/16/32/64-byte) of data without issuing read instructions.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable
the “Wrap Around” operation while W6-5 is used to specify the length of the wrap around section within a page.
7.32 Set Burst with Wrap (77h)
The ‘Set Burst with Wrap’ (77h) instruction is used in conjunction with ‘Fast Read Quad I/O’ and ‘Word Read Quad
I/O’ instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page. Certain applications can
benefit from this feature and improve the overall system code execution performance. Before the device can accept the
‘Set Burst with Wrap’ instruction, the QE bit in the Status register bit must be set.
The ‘Set Burst with Wrap’ instruction is initiated by driving the CS pin low and then shifting the instruction code
“77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The instruction sequence is shown in ‘Set Burst with Wrap’
instruction sequence. Wrap bits W7 and W3-0 are not used.
Table 7-6. Encoding of the W6 - W4 Wrap Bits
W4 = 0
W4 = 1 (Default)
W6, W5
Wrap Around
Wrap Length
8-byte
Wrap Around
Wrap Length
N/A
0 0
0 1
1 0
1 1
Yes
Yes
Yes
Yes
No
No
No
No
16-byte
N/A
32-byte
N/A
64-byte
N/A
Once W6-4 are set by a ‘Set Burst with Wrap’ instruction
instructions use the W6-4 setting to access the corresponding 8/16/32/64
To exit the “Wrap Around” function and return to normal read operation, another ‘Set Burst with Wrap’ instruction should be
issued to set W4 = 1 The default value of W4 upon power on is 1 In the case of a system reset while W4 = 0 it is
recommended that the controller issues a ‘Set Burst with Wrap’ instruction or Reset (99h) instruction to reset W4 = 1 prior to
any normal Read instructions since the AT25QL641 does not have an external hardware reset pin
,
all the following “Fast Read Quad I/O” and ‘Word Read Quad I/O’
-
byte section within any page.
.
.
,
.
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Figure 7-52. Set Burst with Wrap Instruction Sequence
7.33 Burst Read with Wrap (0Ch)
The ‘Burst Read with Wrap’ (0Ch) instruction provides an alternative way to perform the read operation with wrap around
in QPI mode. The instruction is similar to the ‘Fast Rea’ (0Bh) instruction in QPI mode, except the addressing of the
read operation wraps around to the beginning boundary of the wrap length once the ending boundary is reached.
The “Wrap Length” and the number of dummy of clocks can be configured by the ‘Set Read Parameters’ (C0h)
instruction.
Figure 7-53. Burst Read with Wrap instruction (QPI Mode, 80MHz)
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Figure 7-54. Burst Read with Wrap instruction (QPI Mode, 133 MHz)
7.34 Set Read Parameters (C0h)
In QPI mode, to accommodate a wide range of applications with different needs for either maximum read frequency or
minimum data access latency, the ‘Set Read Parameters’ (C0h) instruction can be used to configure the number of
dummy clocks for ‘Fast Read’ (0Bh), ‘Fast Read Quad I/O’ (EBh) and ‘Burst Read with Wrap’ (0Ch) instructions, and
to configure the number of bytes of “Wrap Length” for the ‘Burst Read with Wrap’ (0Ch) instruction.
In Standard SPI mode, the ‘Set Read Parameters’ (C0h) instruction is not accepted. The dummy clocks for various ‘Fast
Read’ instructions in Standard/Dual/Quad SPI mode are fixed, please refer to the instruction. The “Wrap Length” is set
by W6-5 bit in the “Set Burst with Wrap (77h)” instruction. This setting remains unchanged when the device is switched
from Standard SPI mode to QPI mode.
The default “Wrap Length” after a power up or a ‘Reset’ instruction is 8 bytes, the default number of dummy clocks is 4.
When the Set Read Parameters instruction is executed, an 8-bit value (P7-P0) is transferred to the memory. Within this 8-bit
value, bits P5-P4 are used to set the number of dummy clocks and the maximum read frequency as shown in Table 7-7. The
P1-P0 bits are used to set the wrap length as shown in Table 7-8. All other bits are unused.
Table 7-7. Encoding of P[5:4] Bits
Dummy
Clocks
Maximum
Read Frequency
P5, P4
00
01
10
11
4
4
6
8
80 MHz
80 MHz
104 MHz
133 MHz
Table 7-8. Encoding of P[1:0] Bits
P1, P0
Wrap Length
0 0
0 1
1 0
1 1
8-byte
16-byte
32-byte
64-byte
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Figure 7-55. Set Read Parameters Instruction (QPI Mode)
7.35 Enable Reset (66h) and Reset (99h)
For eight-pin packages, the AT25QL641 provide a software Reset instruction instead of a dedicated RESET pin.
Once the Reset instruction is accepted, any ongoing internal operations are terminated and the device returns to its
default power-on state and loses all the current volatile settings, such as Volatile Status Register bits, Write Enable
Latch (WEL) status, Program/Erase Suspend status, Continuous Read Mode bit setting, Read parameter setting and
Wrap bit setting.
The ‘Enable Reset’ (66h) and ‘Reset’ (99h) instructions can be issued in either SPI mode or QPI mode. To avoid
accidental reset, both instructions must be issued in sequence. Any other instructions other than ‘Reset’ (99h) that
occur after the ‘Enable’ (66h) instruction disables the reset enable state. As such, a new sequence of ‘Enable Reset’
(66h) and ‘Reset’ (99h) is needed to reset the device. Once the Reset instruction is accepted by the device takes
approximately tRST = 30 µs to reset. During this period, no instructions are accepted.
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset
instruction sequence is accepted by device. It is recommended to check the BUSY bit and the SUS bit in Status Register
before issuing the Reset instruction sequence.
Figure 7-56. Enable Reset and Reset Instruction (SPI Mode)
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Figure 7-57. Enable Reset and Reset Instruction (QPI Mode)
7.36 Read Serial Flash Discovery Parameter (5Ah)
The Read Serial Flash Discovery Parameter (SFDP) instruction allows reading the Serial Flash Discovery Parameter
area (SFDP). This SFDP area is composed of 2048 read-only bytes containing operating characteristics and vendor
specific information. The SFDP area is factory programmed. If the SFDP area is blank, the device is shipped with all the
SFDP bytes at FFh. If only a portion of the SFDP area is written to, the portion not used is shipped with bytes in the
erased state (FFh).
The instruction sequence for the read SFDP has the same structure as that of a ‘Fast Read’ instruction. First, the device
is selected by driving Chip Select (CS) low. Next, the 8-bit instruction code (5Ah) and the 24-bit address are shifted in,
followed by 8 dummy clock cycles. The bytes of SFDP content are shifted out on the Serial Data Output (SO) starting
from the specified address. Each bit is shifted out during the falling edge of Serial Clock (SCK). The instruction sequence
is shown here. The ‘Read SFDP’ instruction is terminated by driving Chip Select (CS) high at any time during data
output.
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Figure 7-58. Read SFDP Register Instruction
Table 7-9. SFDP Signature and Headers
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
00h
01h
02h
03h
04h
05h
07:00
15:08
23:16
31:24
07:00
15:08
0101 0011
0100 0110
0100 0100
0101 0110
0000 0110
0000 0001
53h
46h
44h
50h
06h
01h
SFDP Signature
Start from 00h
Start from 01h
SFDP Minor Revision
SFDP Major Revision
Number of Parameters
Headers
Start from 00h
FFh
06h
23:16
0000 0001
01h
Reserved
07h
08h
31:24
07:00
1111 1111
FFh
00h
JEDEC Parameter ID
(LSB) = 00H
0000 0000
JEDEC Parameter ID (LSB)
Parameter Table Minor
Revision
Start from 00
h
09h
15:08
0000 0110
06h
Parameter Table Major
Revision
Start from 01h
0Ah
0Bh
23:16
31:24
0000 0001
0001 0000
01h
10h
Parameter Table Length
(double words)
How many DWORDs in
the parameter table
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Table 7-9. SFDP Signature and Headers (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
0Ch
0Dh
0Eh
07:00
15:08
23:16
0011 0000
0000 0000
0000 0000
30h
00h
00h
Address of Adesto
Parameter Table
Parameter Table Pointer
JEDEC Parameter ID
JEDEC Parameter ID (MSB)
JEDEC Parameter ID (LSB)
0Fh
10h
11h
31:24
07:00
15:08
1111 1111
0001 1111
0000 0000
FFh
1Fh
00h
(MSB)
:FFH
Adesto Manufacturer ID
Start from 00h
Parameter Table Minor
Revision
Parameter Table Major
Revision
Start from 01h
12h
13h
23:16
31:24
0000 0001
0000 0010
01h
02h
Parameter Table Length
(double words)
How many DWORDs in
the parameter table
14h
15h
16h
17h
07:00
15:08
23:16
31:24
1000 0000
0000 0000
0000 0000
0000 0001
80h
00h
00h
01h
Parameter Table Pointer
(PTP)
Address of Adesto
Parameter Table
Reserved
FFh
Table 7-10. SFDP Parameters Table 1
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
01: 4 KB available
11: 4 KB not available
Erase Granularity
01:00
01
0: 1 byte
1: 64 bytes or larger
Write Granularity
02
03
04
1
0
0
Volatile Status Register Block
Protect Bits
0: Nonvolatile status bit
1: Volatile status bit
30h
E5h
Volatile Status Register Write
Enable Opcode
0: 50h Opcode to enable,
if bit-3 = 1
Reserved
07:05
15:08
111
4KB Erase Opccde
Opcode or FFh
31h
0010 0000
20h
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
Fast Dual Read Output
(1 -1 -2)
0: Not supported
1: Supported
16
1
00: 3 bytes only
01: 3 or 4 bytes
10: 4 bytes only
11: Reserved
Number of Address Bytes
18:17
00
0: Not supported
1: Supported
Double Transfer Rate (DTR)
Clocking
19
20
21
22
0
1
1
1
32h
F1h
Fast Dual I/O Read
(1-2- 2)
0: Not supported
1: Supported
Fast Quad I/O Read
(1-4-4)
0: Not supported
1: Supported
Fast Quad Output Read
(1-1-4)
0: Not supported
1: Supported
Reserved
Reserved
FFh
FFh
23
1
33h
34h
35h
36h
37h
31:24
07:00
15:08
23:16
31:24
1111 1111
1111 1111
1111 1111
1111 1111
0000 0011
FFh
FFh
FFh
FFh
03h
Flash Memory Density
Fast Quad I/O (1-4-4)
Number of dummy clocks
04:00
07:05
15:08
20:16
23:21
31:24
04:00
07:05
15:08
00100
010
Number of dummy clocks
Number of mode bits
Opcode or FFh
38h
39h
3Ah
3Bh
3Ch
3Dh
44h
EBh
08h
6Bh
08h
3Bh
Fast Quad I/O (1-4-4)
Number of mode bits
Fast Quad I/O (1-4-4) Read
Opcode
1110 1011
01000
Fast Quad Output (1-1-4)
Number of dummy clocks
Number of dummy clocks
Number of mode bits
Opcode or FFh
Fast Quad Output (1-1-4)
Number of mode bits
000
Fast Quad Output (1-1-4)
Read Opcode
0110 1011
01000
Fast Dual Output (1-1-2)
Number of dummy clocks
Number of dummy clocks
Number of mode bits
Opcode or FFh
Fast Dual Output (1-1-2)
Number of mode bits
000
Fast Dual Output (1-1-2)
Read Opcode
0011 1011
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
Fast Dual I/O (1-2-2)
Number of dummy clocks
20:16
23:21
31:24
00000
100
Number of dummy clocks
3Eh
3Fh
80h
Fast Dual I/O (1-2-2)
Number of mode bits
Number of mode bits
Opcode or FFh
Fast Dual I/O (1-2-2) Read
Opcode
1011 1011
BBh
0: Not supported
1: Supported
Fast Dual DPI (2-2-2)
Reserved
0
0
111
1
FFh
03:01
04
40h
FEh
0: Not supported
1: Supported
Fast Quad QPI (4-4-4)
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
FFh
FFh
FFh
FFh
FFh
FFh
07:05
15:08
23:16
31:24
07:00
15:08
111
41h
42h
43h
44h
45h
1111 1111
1111 1111
1111 1111
1111 1111
1111 1111
FFh
FFh
FFh
FFh
FFh
Fast Dual DPI (2-2-2)
Number of dummy clocks
20:16
23:21
31:24
0 0000
000
Number of dummy clocks
Number of mode bits
Opcode or FFh
46h
00h
Fast Dual DPI (2-2-2)
Number of mode bits
Fast Dual DPI(2-2-2) Read
Opcode
47h
1111 1111
FFh
Reserved
Reserved
FFh
FFh
48h
49h
07:00
15:08
1111 1111
1111 1111
FFh
FFh
Fast Quad QPI (4-4-4)
Number of dummy clocks
20:16
23:21
31:24
00010
010
Number of dummy clocks
Number of mode bits
Opcode or FFh
4Ah
4Bh
42h
Fast Quadl QPI (4-4-4)
Number of mode bits
Fast Quad QPI (4-4-4) Read
Opcode
1110 1011
EBh
4 KB = 2^0Ch, 32 KB = 2^0Fh,
64 KB = 2^10h; (2^Nbyte)
Erase type-1 Size
Erase type-1 Opcode
Erase type-2 Size
Erase type-2 Opcode
4Ch
4Dh
4Eh
4Fh
07:00
15:08
23:16
31:24
0000 1100
0010 0000
0000 1111
0101 0010
0Ch
20h
0Fh
52h
Opcode or FFh
4 KB = 2^0Ch, 32 KB = 2^0Fh,
64 KB = 2^10h; (2^Nbyte)
Opcode or FFh
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
4 KB = 2^0Ch, 32 KB = 2^0Fh,
64 KB = 2^10h; (2^Nbyte)
07:00
Erase Type-3 Size
50h
0001 0000
10h
Opcode or FFh
Erase Type-3 Opcode
Erase Type-4 Size
51h
52h
53h
15:08
23:16
31:24
1101 1000
0000 0000
1111 1111
D8h
00h
FFh
4 KB = 2^0Ch, 32 KB = 2^0Fh,
64 KB = 2^10h; (2^Nbyte)
Opcode or FFh
Erase Type-4 Opcode
Erase Maximum/Typical
Ratio
Maximum = 2 * (COUNT + 1) *
Typical
03:00
08:04
0011
Erase type-1 Typical time
Erase type-1 Typical units
Erase type-2 Typical time
Erase type-2 Typical units
Erase type-3 Typical time
Erase type-3 Typical units
Erase type-4 Typical time
Erase type-4 Typical units
Count or 00h
0 0011
00b: 1 ms
01b: 16 ms
10b: 128 ms
11b: 1 sec
10:09
15:11
17:16
22:18
24:23
29:25
31:30
01
0110 0
01
Count or 00h
00b: 1 ms
01b: 16 ms
10b: 128 ms
11b: 1 sec
54h
55h
56h
57h
33h
62h
D5h
00h
Count or 00h
101 01
01
00b: 1 ms
01b: 16 ms
10b: 128 ms
11b: 1 sec
Count or 00h
00 000
00
00b: 1 ms
01b: 16 ms
10b: 128 ms
11b: 1 sec
Program Maximum/Typical
Ratio
Maximum = 2 * (COUNT + 1) *
Typical
03:00
07:04
0100
1000
58h
84h
Page Size
2^N bytes
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
Program Page Typical time
Count or 00h
12:08
13
0 1001
1
0: 8
µs,
Program Page Typical units
1: 64
µs
Program Byte Typical time,
1st byte
Count or 00h
17:14
18
01 00
0
Program Byte Typical units,
1st byte
0: 1
1: 8
µs,
µs
59h
5Ah
5Bh
Program Additional Byte
Typical time
29h
01h
C7h
Count or 00h
22:19
000 0
Program Additional Byte
Typical units
0: 1
1: 8
µs,
23
0
µs
Erase Chip Typical time
Erase Chip Typical units
Reserved
Count or 00h
28:24
0 0111
00b: 16 ms
01b: 256 ms
10b: 4 sec
30:29
31
10
1
11b: 64 sec
1h
Prohibited Op during
Program Suspend
see Datasheet
see Datasheet
03:00
07:04
11010
1110
5Ch
ECh
Prohibited Op during Erase
Suspend
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Reserved
Comment
1h
08
1
Program Resume to
Suspend time
Count of 64us
12:09
0 000
Program Suspend Maximum
time
Count or 00h
00b: 128 ns,
17:13
19:18
11 101
01
Program Suspend Maximum
units
01b: 1
10b: 8
µ
µ
s,
s,
11b: 64
µs
5Dh
5Eh
5Fh
A1h
07h
3Dh
Erase Resume to Suspend
time
Count of 64
µ
s
23:20
28:24
0000
Erase Suspend Maximum
time
Count or 00h
00b: 128 ns,
1 1101
Erase Suspend Maximum
units
01b: 1
10b: 8
11b: 64 µs
µ
µ
s,
s,
30:29
31
01
0
0: Program and Erase suspend
supported
Suspend / Resume
supported
1: not supported
Program Resume Opcode
Program Suspend Opcode
Resume Opcode
Opcode or FFh
Opcode or FFh
Opcode or FFh
Opcode or FFh
11b
60h
61h
62h
63h
7:0
0111 1010
0111 0101
0111 1010
0111 0101
11
7Ah
75h
7Ah
75h
15:8
23:16
31:24
01:00
Suspend Opcode
Reserved
xxxxx1b: Opcode = 05h, bit-0 =
1 Busy,
64h
F7h
Status Register Busy Polling
xxxx1xb: Opcode = 70h, bit-7 =
0 Busy,
07:02
1111 01
Others: reserved
Count or 00h
00b: 128 ns,
Exit Deep Powerdown time
Exit Deep Powerdown units
12:08
14:13
0 0010
01
01b: 1
10b: 8
µ
µ
s,
s,
11b: 64 µs
65h
66h
67h
A2h
D5h
5Ch
Exit Deep Powerdown
Opcode
Opcode or FFh
Opcode or FFh
22:15
30:23
31
101 0101 1
101 1100 1
0
Enter Deep Powerdown
Opcode
0: Deep Powerdown supported
1: Not supported
Deep Powerdown Supported
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Table 7-10. SFDP Parameters Table 1 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
Disable 4-4-4 Read Mode
Enable 4-4-4 Read Mode
03:00
08:04
1001
0 0001
Fast Quad I/O Continuous
(0-4-4) supported
0: not supported,
1: Quad I/O 0-4-4 supported
09
1
Fast Quad I/O Continuous
(0-4-4) Exit
15:10
19:16
22:20
1111 01
1100
001
68h
69h
6Ah
19h
F6h
1Ch
Fast Quad I/O Continuous
(0-4-4) Enter
Quad Enable Requirements
(QER)
0: not supported,
1: use Configuration Register
bit-4
HOLD or RESET Disable
23
0
Reserved
FFh
6Bh
6Ch
31:24
06:00
07
1111 1111
110 1000
1
FFh
E8h
Status Register Opcode
Reserved
1h
Soft Reset Opcodes
4-Byte Address Exit
4-Byte Address Enter
6Dh
6Eh
6Fh
13:08
23:14
31:24
01 0000
10h
C0h
1100 0000 00
1000 0000
80h
Table 7-11. SFDP Parameters Table 2
Description
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Comment
1650h: 1.65V,
1700h: 1.70V,
2300h: 2.30V,
2500h: 2.50V,
2700h: 2.70V
80h
81h
0000 0000
0001 0111
00h
17h
VCC Minimum Voltage
VCC Maximum Voltage
15:0
1950h: 1.95V,
3600h: 3.60V,
4000h: 4.00V,
4400h: 4.40V
82h
83h
0000 0000
0010 0000
00h
20h
31:16
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Table 7-11. SFDP Parameters Table 2 (Continued)
Address
(h) Byte
Address
(Bit)
Data (b)
(Bit)
Data (h)
(Byte)
Description
Comment
10b: Use non-volatile
status register
Array Protection Method
01:00
02
00
0
0: Power up unprotected
1: Power up protected
Power up Protection default
Protection Disable Opcodes
Protection Enable Opcodes
011b: Use status register
011b: Use status register
011b: Use status register
05:03
08:06
11:09
00 0
0 00
000
84h
85h
00h
00h
Protection Read Opcodes
00b: Not supported
01b: Opcodes
3Dh, 2Ah, 7Fh, FCh
Protection Register Erase
Opcode
13:12
15:14
00
00
00b: Not supported
01b: Opcodes
3Dh, 2Ah, 7Fh, FCh
Protection Register Program
Opcode
Reserved
Reserved
Reserved
FFh
FFh
FFh
86h
87h
23:16
31:24
1111 1111
1111 1111
FFh
FFh
88h - FFh
Reserved
7.37 Enter Secured OTP (B1h)
The ‘Enter Secured OTP’ instruction is for entering the additional 4 Kbit secured OTP mode. This additional mode is
independent from the main array, which may be used to store unique serial number for system identifier. After entering
the Secured OTP mode, the standard read or program procedure can be used to read or write data. The Secured OTP
data cannot be updated again once it is locked down.
Please note that ‘Write Status Register-1’, ‘Write Status Register-2’ and ‘Write Security Register’ instructions are not
acceptable during the access of secure OTP region. Once security OTP is locked down, only commands related with
read are valid. The ‘Enter Secured OTP’ instruction sequence is shown in Figure 7-59.
Figure 7-59. Enter Secured OTP Instruction for SPI Mode (left) and QPI Mode (right)
AT25QL641
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61
7.38 Exit Secured OTP (C1h)
The Exit Secured OTP instruction is for exiting the additional 4 Kbit secured OTP mode. (Please refer to Figure 7-60).
Figure 7-60. Exit Secured OTP instruction for SPI Mode (left) and QPI Mode (right)
7.39 Read Security Register (2Bh)
The Read Security Register can be read the value of Security Register bits at any time (even in program/erase/write
status register-1 and write status register-2 condition) and continuously. Bits 0 and 1 of this register are described below.
All other bits of the register are reserved.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before or not. When it is
“0”, it indicates a non-factory lock, a “1” indicates a factory lock.
Lock-down Secured OTP (LDSO) bit. By executing the ‘Write Security Register’ instruction, the LDSO bit may be set to
“1” for customer lock down purposes. However, once the bit it set to “1” (locked down), the LDSO bit and the 4 Kbit
Secured OTP area cannot be updated any more. While it is in 4 Kbit Secured OTP mode, array access is not allowed to
write.
Table 7-12. Security Register Definition
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
LDSO (indicate if
lock- down)
Secured OTP
indicator bit
x
x
x
x
x
x
0 = not
0 = non factory
lock
lock-down
Reserved Reserved
Reserved
Reserved
Reserved
Reserved
1 = lock- down
(cannot program/
erase OTP)
1 = factory lock
Volatil
e bit
Volatile
bit
Volatile
bit
Volatile
bit
Volatile
bit
Volatile
bit
Non
-
Volatile bit
Non
-
Volatile
bit
AT25QL641
DS-25QL641–130E–10/2018
62
Figure 7-61. Read Security Register instruction (SPI Mode)
Figure 7-62. Read Security Register Instruction (QPI Mode)
7.40 Write Security Register (2Fh)
The ‘Write Security Register’ instruction is for change the state of the bits in the Security Register. Unlike the ‘Write
Status Register’ instruction, the ‘Write Enable’ instruction is not required before executing the ‘Write Security Register’
instruction. The instruction may change the value of bit 1 (LDSO bit) for a customer to lock down the 4 Kbit Secured
OTP area. Once the LDSO bit is set to “1”, the Secured OTP area cannot be updated any more.
The CS must go high exactly at the boundary; otherwise, the instruction is not executed.
AT25QL641
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Figure 7-63. Write Security Register Instruction for SPI Mode (left) and QPI Mode (right)
7.41 4 Kbit Secured OTP
The AT25QL641 provides a 4 Kbit one-time-program area for setting a unique serial number which can be set by
either the factory or the customer. Security register bit 0 indicates whether the chip is locked by factory or not.
The 4 Kbit OTP space is accessed using the B1h instruction as described above. After the OTP value has been
programmed, the C1h instruction is used to exit from the secured OTP space.
The secure OTP space is divided into a 128-bit electronic serial number, and 3968 bits is user-defined data as shown in
Table 7-13.
Note. Once the OTP space is locked down, either by the factory or the customer, it cannot be changed any more.
While in 4 Kbit secured OTP mode, array access is not allowed to write.
Table 7-13. Secure OTP Address Space
Standard
Address Range
000000 ~ 00000F
000010 ~ 0001FF
Size
Customer Lock
ESN
128-bit
3968-bit
(Electrical Serial Number)
Determined by customer
N/A
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64
8.
ElectricalCharacteristics
Table 8-1. Absolute Maximum Ratings (1)
Parameter
Supply Voltage
Symbol
VCC
Conditions
Value
Units
-0.6 to VCC+0.4
-0.6 to VCC +0.4
V
V
V
Voltage Applied to any pin
V
IO
Relative to Ground
Transient Voltage on any pin
<20nS Transient Relative
to Ground
V
IOT
-1.0V to VCC +1.0V
Storage temperature
Lead temperature
T
STG
-65 to +150
See Note (2)
˚C
˚C
V
TLEAD
Electrostatic discharge
voltage
V
ESD
Human Body Model (3)
-2000 to +2000
1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The “Absolute
Maximum Ratings” are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability. Voltage extremes referenced in the “Absolute Maximum Ratings” are intended to accommodate short
duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended
period of time.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on
restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500Ω, R2 = 500Ω).
Table 8-2. Operating Ranges
Parameter
Symbols
Conditions
Min
Max
Units
fR = 133 MHz (Single/Dual/Quad SPI)
fR = 50 MHz (Read Data 03h)
Supply Voltage
VCC
1.7
2.0
V
Ambient Operating
Temperature
TA
Industrial
-40
+85
oC
Table 8-3. Endurance and Data Retention
Parameter
Conditions
Min
100,000
Max
Units
Cycles
Years
Erase/Program Cycles
Data Retention
4 KB Block
, 32/64 KB block, or full chip
Full Temperature Range
20
AT25QL641
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65
Table 8-4. Power-up Timing and Write Inhibit Threshold
Parameter
Symbol (1)
Min
10
1
Max
Units
VCC (min) to CS low
tVSL
tPUW
VWI
µs
Time Delay before Write Instruction
Write Inhibit Threshold Voltage
10
ms
V
1.0
1.4
1. These parameters are characterized at -10C and +85C only
Figure 8-1. Power-up Timing and Voltage Levels
8.1
DC Electrical Characteristics
Table 8-5. DC Electrical Characteristics
Parameter
Input Capacitance (1)
Output Capacitance(1)
Input Leakage
Symbol
CIN
Condition
Min
Typ
Max
6
Units
pF
VIN = 0V
COUT
ILI
VOUT = 0V
8
pF
±2
±2
µA
Output Leakage
ILO
µA
CS = VCC
VIN = GND or VCC
Standby Current
ICC1
ICC2
ICC3
10
2
50
20
7
µA
µA
CS = VCC
VIN = GND or VCC
Power Down Current
Current Read Data
Dual/Quad 1 MHz (2)
C = 0.1 VCC / 0.9 VCC
IO = Open
mA
AT25QL641
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66
Table 8-5. DC Electrical Characteristics (Continued)
Parameter
Symbol
Condition
Min
Typ
Max
Units
Current Read Data
C = 0.1 VCC / 0.9 VCC
IO = Open
ICC3
15
mA
Dual/Quad 50 MHz(2)
Current Read Data
C = 0.1 VCC / 0.9 VCC
IO = Open
ICC3
ICC3
ICC3
ICC4
18
20
27
20
mA
mA
mA
mA
Dual/Quad 80 MHz(2)
Current Read Data
C = 0.1 VCC / 0.9 VCC
IO = Open
Dual/Quad 104 MHz(2)
Current Read Data
C = 0.1 VCC / 0.9 VCC
IO = Open
Dual/Quad 133 MHz(2)
Current Write Status
Register
CS = VCC
10
Current Page Program
Current Block Erase
Current Chip Erase
ICC5
ICC6
ICC7
CS = VCC
CS = VCC
CS = VCC
15
15
15
25
25
25
mA
mA
mA
1. Tested on sample basis and specified through design and characterization data, TA = 25C, VCC = 1.8V.
2. Checked board pattern.
8.2
AC Measurement Conditions
Table 8-6. AC Measurement Conditions
Parameter
Symbol
CL
Min
Max
30
5
Units
Load Capacitance
pF
ns
V
Input Rise and Fall Times
Input Pulse Voltages
tR, tF
VIN
0.2 VCC to 0.8 VCC
0.3 VCC to 0.7 VCC
0.5 VCC to 0.5 VCC
Input Timing Reference Voltages
Output Timing Reference Voltages
IN
V
OUT
V
Figure 8-2. AC Measurement I/O Waveform
AT25QL641
DS-25QL641–130E–10/2018
67
8.3
AC Electrical Characteristics
Table 8-7. AC Electrical Characteristics
Parameter (1)
Symbol
Alt
Min
Typ
Max
Unit
Clock frequency for all instructions, except Read Data and
Fast Read Data in SPI mode (03h, 0Bh)
f
R
f
c
D.C.
133
MHz
1.7V- 2.0V VCC and industrial temperature
Clock freq. Fast Read Data instruction in SPI mode (0Bh)
Clock freq. Read Data instruction in SPI mode (03h)
Clock High, Low Time except Read Data (03h)
Clock High, Low Time for Read Data (03h)
Clock Rise Time peak-to-peak
f
f
R
R
D.C.
D.C.
3.5
8
104
50
MHz
MHz
ns
(2)
tCLH, tCLL
(2)
tCRLH, tCRLL
ns
(3)
tCLCH
0.1
0.1
5
V/ns
V/ns
ns
(3)
Clock Fall Time peak-to-peak
tCHCL
CS Active Setup Time relative to Clock
CS Not Active Hold Time relative to Clock
Data In Setup Time
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tCHSH
tSHSL
tCSS
5
ns
tDSU
tDH
2
ns
Data In Hold Time
3
ns
CS Active Hold Time relative to Clock
CS NotActive Setup Time relative to Clock
5
ns
5
ns
CS Deselect Time (for Read instructions/Write,
Erase and Program instructions)
tCSH
100
ns
Output Disable Time
tSHQZ(3)
tCLQV
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tDIS
tV1
7
6
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
Clock Low to Output Valid
(4)
Clock Low to Output Valid (Except Main Read)
tV2
Output Hold Time
tHO
1.5
5
HOLD Active Setup Time relative to Clock
HOLD Active Hold Time relative to Clock
HOLD Not Active Setup Time relative to Clock
HOLD Not Active Hold Time relative to Clock
HOLD to Output Low-Z
5
5
5
(3)
tHHQX
t
LZ
7
(3)
HOLD to Output High-Z
tHLQZ
t
HZ
12
(5)
Write Protect Setup Time Before CS Low
Write Protect Setup Time After CS High
CS High to Power Down Mode
tWHSL
20
(5)
tSHWL
100
(3)
3
3
tDP
(3)
CS High to Standby Mode without
Electronic Signature Read
tRES1
(3)
CS High to Standby Mode with
Electronic Signature Read
tRES2
1.8
µs
AT25QL641
DS-25QL641–130E–10/2018
68
Table 8-7. AC Electrical Characteristics (Continued)
Parameter (1)
Symbol
Alt
Min
Typ
Max
30
Unit
µs
µs
ms
µs
ms
s
(3)
CS High to next Instruction after Suspend
CS High to next Instruction after Reset
Write Status Register Time
Byte Program Time
tSUS
(3)
tRST
30
tw
5
5
15
t
t
t
BP
PP
SE
150
5
Page Program Time
0.6
0.06
0.2
0.35
60
Block Erase Time (4KB)
0.4
1.5
2
Block Erase Time (32KB)
t
t
BE1
BE2
s
Block Erase Time (64KB)
s
Chip Erase Time
t
CE
300
s
1. Commercial temperature only applies to Fast Read (FR). Industrial temperature applies to all other parameters.
2. Clock high + Clock low must be less than or equal to 1/fc.
3. Value guaranteed by design and/or characterization, not 100% tested in production.
4. Contains: Read Status Register-1, 2/ Read Manufacturer/Device ID, Dual, Quad/ Read JEDEC ID/ Read Security Register/ Read Serial Flash Discovery
Parameter.
5. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
8.4
Input Timing
AT25QL641
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69
8.5
Output Timing
8.6
Hold Timing
AT25QL641
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70
9.
Ordering Information
9.1
Ordering Code Detail
A T 2 5 Q L 6 4 1 – S U E – T
Designator
Shipping Carrier Option
T = Tape and reel
Product Family
Operating Voltage
E = 1.7V to 2.0V
Device Grade
U
= Green, Matte Sn or Sn alloy,
Industrial temperature range
(–40°C to +85°C)
Device Density
641 = 64-megabit
H = NiPdAu lead-frame
Industrial Temp range (-40C+85C)
Package Option
= 8-pad, 5 x 6 x 0.6 mm UDFN
M
S = 8-lead, 0.208" wide SOIC
U = 8-ball 0.5mm pitch dBGA
Operating
Voltage
Max. Freq.
(MHz)
Ordering Code (1) (2)
AT25QL641-MHE-T
AT25QL641-SUE-T
AT25QL641-UUE-T
Package
8MA1
Lead Finish
Operation Range
NiPdAu
-40 oC to 85 oC
8S4
1.7V - 2.0V
133 MHz
(Industrial
Temperature Range)
SnAgCu
8-WLCSP
1. The AT25QL641 is shipped with the QE bit set to 1 enabling the Quad / QPI mode.
2. The shipping carrier option code is not marked on the devices.
Package Type
8S4
8-lead, 0.208" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8MA1
8-pad (5 x 6 x 0.6 mm body), Thermally Enhanced Plastic Ultra-Thin Dual Flat No-lead (UDFN)
8-ball, 0.5mm pitch, die Ball Grid Array (dBGA)
8-WLCSP
AT25QL641
DS-25QL641–130E–10/2018
71
10. Packaging Information
10.1 8S4 – 8-lead, .208” EIAJ SOIC
MILLIMETERS
INCHES
NOM
0.077
0.006
0.071
0.017
0.008
0.208
0.311
0.208
0.050 BSC
0.026
-
SYMBOL
MIN
1.75
0.05
1.70
0.35
0.19
5.18
7.70
5.18
NOM
1.95
0.15
1.80
0.42
0.20
5.28
7.90
5.28
1.27 BSC
0.65
-
MAX
2.16
0.25
1.91
0.48
0.25
5.38
8.10
5.38
MIN
MAX
0.085
0.010
0.075
0.019
0.010
0.212
0.319
0.212
A
A1
A2
B
0.069
0.002
0.067
0.014
0.007
0.204
0.303
0.204
C
D
E
E1
e
L
0.50
0.80
8˚
0.020
0.031
8˚
Θ
0˚
0˚
Y
-
-
0.10
-
-
0.004
5/5/16
REV.
DRAWING NO.
GPC
STN
TITLE
®
8S3, 8-lead, 0.208”Body, Plastic Small
Outline Package (EIAJ)
Package Drawing Contact:
contact@adestotech.com
8S3
A
AT25QL641
DS-25QL641–130E–10/2018
72
10.2 8MA1 – UDFN
E
C
Pin 1 ID
SIDE VIEW
D
y
TOP VIEW
A1
A
K
8
E2
Option A
0.45
Pin #1
Cham fer
(C 0.35)
1
2
3
Pin #1 Notch
(0.20 R)
COMMON DIMENSIONS
(Unit of Measure = mm)
(Option B)
MIN
MAX
NOM
NOTE
SYMBOL
7
D2
6
A
0.45
0.55
0.60
e
A1
b
0.00
0.35
0.02
0.40
0.152 REF
5.00
4.00
6.00
3.40
1.27
0.60
–
0.05
0.48
C
D
D2
E
4.90
3.80
5.90
3.20
5.10
4.20
6.10
3.60
5
4
b
BOTTOM VIEW
L
E2
e
L
0.50
0.00
0.20
0.75
0.08
–
y
K
–
4/15/08
GPC
YFG
DRAWING NO.
TITLE
REV.
®
Package Drawing Contact:
contact@adestotech.com
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
8MA1
D
AT25QL641
DS-25QL641–130E–10/2018
73
10.3 8-WLCSP — die Ball Grid Array
TOP VIEW
1
2
3
4
A
B
C
D
E
F
SIDE VIEW
BOTTOM VIEW
0.45
4
3
2
1
A
B
C
D
E
F
COMMON DIMENSIONS
(Unit of Measure = mm)
Pin Assignment Matrix
A
B
C
D
E
F
NC
NC
1
I/O0(SI)
VCC I/O3(HOLD)
SCK
2
3
4
I/O1(SO) I/O2(WP)
GND
CS
NC
NC
11/10/16
GPC
YFG
DRAWING NO.
TITLE
REV.
®
Package Drawing Contact:
contact@adestotech.com
8-WLCSP, 8-ball (2 x 4 Array), Wafer Level Chip Scale
Package (WLCSP)
8W-8A
A
AT25QL641
DS-25QL641–130E–10/2018
74
11. Revision History
Revision
Date
Change Description
Initial release of AT25QL641 datasheet.
A
B
12/2016
02/2017
Updated Note 1 on Table 8.1.
Updated Table 1-1 (WP pin description). Updated 5.1 (Write Protect Features). Updated
Tables 6-1 and 6-2. Restored Sector and Block Protect descriptions. Restored Status
Register Memory Protection tables (Tables 6-3 and 6-4). Added clarification to Write Status
Register (01h) description. Updated document status from Advanced to Complete. Added
Errata 11.1.
C
D
05/2017
11/2017
Removed references to 133 MHz option. Removed RESET option. Removed 18-WLCSP and
24-ball BGA package options. Removed references to ACC feature.
Added 133 MHz frequency option to document.
Updated maximum frequency to 133 MHz on page 1.
Updated frequencies in Section 1.
Updated formatting of all tables in document.
Updated Word Read Quad I/O instruction diagram in Figure 7-50.
Updated frequency in Burst Read with Wrap instruction in Figure 7-54.
Updated tables in Section 7.33, Set Read Parameters (C0h).
Updated AC Electrical Characteristics table in Table 8-7 with 133 MHz option.
Clarified frequency and timing parameters for the 03h and 0Bh instructions in Table 8-7.
Updated ordering code table in Section 9.1.
E
10/2018
Removed DWF package.
Updated maximum continuous data transfer rate from 52 Mbps to 66 Mbps on page 1.
11.1 Errata:
Appendix A
1. If Status Register-2 CMP bit is 0, and Status Register-1 bits {SEC,TB,BP2,BP1,BP} are {1,0,0,0,1}, address 7FF000h-
7FFFFFh is protected from any Program or Erase commands. However, this setting does not protect the rest of Sector
127 or the rest of Block 255 from 64Kbit or 32kbit Block Erase commands. If a 64Kbit Block Erase Command is issued to
Sector 127, address 7F0000h-7FEFFFh will be erased. If a 32Kbit Block Erase Command is issued to Block 255,
address 7F8000h-7FEFFFh will be erased.
Workaround: If this protection bit combination is used and the behavior described in Note 3 is required, avoid using
64Kbit or 32kbit Block Erase commands for this specific memory region.
2. If Status Register-2 CMP bit is 1, and Status Register-1 bits {SEC,TB,BP2,BP1,BP} are {1,1,0,0,1}, address 001000h-
7FFFFFh is protected from any Program or Erase commands. However, this setting does not protect the rest of Sector 0
or the rest of Block 0 from 64Kbit or 32kbit Block Erase commands. If a 64Kbit Block Erase Command is issued to Sector
0, address 000000h-000FFFh will be erased. If a 32Kbit Block Erase Command is issued to Block 0, address 000000h-
000FFFh will be erased.
Workaround: If this protection bit combination is used and the behavior described in Note 3 is required, avoid using
64Kbit or 32kbit Block Erase commands for this specific memory region.
AT25QL641
DS-25QL641–130E–10/2018
75
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2018 Adesto Technologies. All rights reserved. DS-25QL641-130E–10/2018
Adesto, the Adesto logo, CBRAM and DataFlash are trademarks or registered trademarks of Adesto Technologies Corporation in the United States and other countries. Other company, product, and service
names may be trademarks or service marks of others. Adesto products are covered by one or more patents listed at http://www.adestotech.com/patents.
Disclaimer: Adesto Technologies Corporation (“Adesto”) makes no warranties of any kind, other than those expressly set forth in Adesto’s Terms and Conditions of Sale at
http://www.adestotech.com/terms-conditions. Adesto assumes no responsibility or obligations for any errors which may appear in this document, reserves the right to change devices or specifications
herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by Adesto
herewith or in connection with the sale of Adesto products, expressly or by implication. Adesto’s products are not authorized for use in medical applications (including, but not limited to, life support systems
and other medical equipment), weapons, military use, avionics, satellites, nuclear applications, or other high risk applications (e.g., applications that, if they fail, can be reasonably expected to result in
personal injury or death) or automotive applications, without the express prior written consent of Adesto.
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