AT25QL641-SUE-T [DIALOG]

64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support;
AT25QL641-SUE-T
型号: AT25QL641-SUE-T
厂家: Dialog Semiconductor    Dialog Semiconductor
描述:

64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support

时钟 光电二极管 内存集成电路
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中文:  中文翻译
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product porolio. The exis�ng content from datasheets, including part numbers and codes should be used. Terms of  
Purchase are provided on the Dialog website  
https://www.dialog-semiconductor.com/general-terms-and-conditions-purchase  
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www.dialog-semiconductor.com/products/memory  
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AT25QL641  
64-Mbit, 1.7V Minimum  
SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support  
Features  
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Single 1.7V - 2.0V Supply  
Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) compatible  
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ò
ò
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Supports SPI Modes 0 and 3  
Supports Dual Output Read and Quad I/O program and read  
Supports QPI program and read  
133 MHz maximum operating frequency  
Clock-to-Output (tV1) of 6 ns  
Up tp 66 MB/s continuous data transfer rate  
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Quad enabled (factory default setting: see Section 6.7)  
Full chip erase  
Flexible, optimized erase architecture for code and data storage applications  
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0.6 ms typical Page Program (256 Bytes) time  
60 ms typical 4 Kbyte Block Erase time  
200 ms typical 32 Kbyte Block Erase time  
350 ms typical 64 Kbyte Block Erase time  
ò
ò
ò
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Hardware controlled locking of Status registers via WP pin  
4 Kbit secured One-Time Programmable (OTP) security register  
Hardware write protection  
Serial Flash Discoverable Parameters (SFDP) register  
Flexible programming  
ò
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Byte/page program (1 to 256 Bytes)  
Dual or quad input byte/page program (1 to 256 Bytes)  
ò
ò
ò
Erase/program suspend and resume  
JEDEC standard manufacturer and device ID read methodology  
Low power dissipation  
ò
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2 µA Deep Power-Down (DPD) current (typical)  
10 µA Standby current (typical)  
5 mA Active read current (typical)  
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Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks)  
Data Retention: 20 years  
Industrial temperature range: -40 °C to +85 °C  
Industry standard green (Pb/Halide-free/RoHS compliant) package options  
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8-lead SOIC (0.208” Wide EIAJ)  
8-pad DFN (6 x 5 x 0.6 mm)  
8-ball WLCSP (dBGA)  
DS-25QL641–130E–10/2018  
1.  
Introduction  
The Adesto® AT25QL641 is a serial interface Flash memory device designed for use in a wide variety of high-volume  
consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM  
for execution. The flexible erase architecture of the AT25QL641 is ideal for data storage as well, eliminating the need for  
additional data storage devices.  
The erase block sizes of the AT25QL641 have been optimized to meet the needs of today's code and data storage  
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because  
certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and  
unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased  
memory space efficiency allows additional code routines and data storage segments to be added while still maintaining  
the same overall device density.  
SPI clock frequencies of up to 133 MHz are supported, allowing equivalent clock rates of 266 MHz for Dual Output and  
532 MHz for Quad Output when using the QPI and Fast Read Dual/Quad I/O instructions.The AT25QL641 array is  
organized into 32,768 programmable pages of 256 bytes each. Up to 256 bytes can be programmed at a time using the  
Page Program instructions. Pages can be erased 4 KB block, 32 KB block, 64 KB block, or the entire chip.  
The devices operate on a single 1.7V to 1.95V power supply with current consumption as low as 5 mA active and 2  
Deep Power Down (DPD). All devices offered in space-saving packages. The device supports JEDEC standard  
manufacturer and device identification with a 4 Kbit secured OTP.  
µA for  
AT25QL641  
DS-25QL641–130E–10/2018  
2
2.  
Pinouts and Pin Descriptions  
The following figures show the available package types.  
Figure 1-1. 8-SOIC (Top View)  
Figure 1-2. 8-UDFN (Top View)  
1
8
7
6
5
CS  
VCC  
CS  
SO (IO1)  
1
2
3
4
8
7
6
5
VCC  
2
SO (IO1)  
HOLD (IO3)  
SCK  
HOLD (IO3)  
SCK  
3
WP (IO2, ACC)  
WP (IO2, ACC)  
GND  
4
GND  
SI (IO0)  
SI (IO0)  
Figure 1-3. 8-WLCSP (Bottom View)  
NC  
NC  
CS  
Vcc  
I/O1(SO)  
I/O2(WP)  
GND  
I/O3(HOLD)  
SCK  
I/O0(SI)  
NC  
NC  
During all operations, VCC must be held stable and within the specified valid range: VCC (min) to VCC (max).  
All of the input and output signals must be held high or low (according to voltages of VIH, VOH, VIL or VOL).  
AT25QL641  
DS-25QL641–130E–10/2018  
3
Table 1-1. Pin Descriptions  
Asserted  
State  
Symbol  
Name and Function  
CHIP SELECT  
Type  
When this input signal is high, the device is deselected and serial data output pins are at  
high impedance. Unless an internal program, erase or write status register cycle is in  
progress, the device remains in the standby power mode (this is not the deep power  
down mode). Driving the Chip Select (CS) low enables the device, placing it in the active  
power mode. After power-up, a falling edge of Chip Select (CS) is required prior to the  
start of any instruction.  
CS  
Low  
Input  
SERIAL CLOCK  
This input signal provides the timing for the serial interface. Instructions, addresses, or data  
present at serial data input are latched on the rising edge of Serial Clock (SCK). Data are  
shifted out on the falling edge of the SCK.  
SCK  
-
Input  
SERIAL INPUT  
The SI pin is used to shift data into the device. The SI pin is used for all data input, including  
command and address sequences. Data on the SI pin is always latched in on the rising edge  
of SCK.  
With the Dual-Output and Quad-Output Read commands, the SI Pin becomes an output pin  
(I/O0) in conjunction with other pins to allow two or four bits of data on (I/O3-0) to be clocked in  
on every falling edge of SCK  
SI (I/O0)  
-
Input/Output  
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin is referenced as the SI  
pin unless specifically addressing the Dual-I/O and Quad-I/O modes in which case it is  
referenced as I/O0.  
Data present on the SI pin is ignored whenever the device is deselected (CS is deasserted).  
SERIAL OUTPUT  
The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out  
on the falling edge of SCK.  
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O0) in conjunction  
with other pins to allow two bits of data on (I/O1-0) to be clocked in on every falling edge of  
SCK.  
SO (I/O1)  
-
Input/Output  
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin is referenced as the SO  
pin unless specifically addressing the Dual-I/O modes in which case it is referenced as I/O1.  
The SO pin is in a high-impedance state whenever the device is deselected (CS is  
deasserted).  
WRITE PROTECT  
The Write Protect (WP) pin can be used to protect the Status register against data  
modification. Used in conjunction with the Block Protect (SEC, TB, BP2, BP1 and BP0) bits  
and Status Register Protect SRP) bits, a portion or the entire memory array can be hardware-  
protected. The WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O,  
the WP pin (Hardware Write Protect) function is not available since this pin is used for I/O2.  
WP (I/O2)  
-
Input/Output  
AT25QL641  
DS-25QL641–130E–10/2018  
4
Table 1-1. Pin Descriptions (Continued)  
Asserted  
State  
Symbol  
Name and Function  
HOLD  
Type  
The HOLD pin is used to temporarily pause serial communication without deselecting or  
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on  
the SI pin are ignored and the SO pin is placed in a high-impedance state.  
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold  
condition to start. A Hold condition pauses serial communication only and does not have an  
effect on internally self-timed operations such as a program or erase cycle.  
HOLD  
(I/O3)  
With the Quad-Input Byte/Page Program command, the HOLD pin becomes an input pin (I/O3)  
and with other pins, allows four bits (on I/O3-0) of data to be clocked in on every rising edge of  
SCK. With the Quad-Output Read commands, the HOLD Pin becomes an output pin (I/O3) in  
conjunction with other pins to allow four bits of data on (I/O33-0) to be clocked in on every  
falling edge of SCK.  
-
Input/Output  
To maintain consistency with SPI nomenclature, the HOLD (I/O3) pin is referenced as the  
HOLD pin unless specifically addressing the Quad-I/O modes in which case it is referenced as  
I/O3. The HOLD pin is internally pulled-high and may be left floating if the Hold function is not  
used. However, it is recommended that the HOLD pin also be externally connected to VCC  
whenever possible.  
DEVICE POWER SUPPLY: VCC is the supply voltage. It is the single voltage used for all  
device functions including read, program, and erase. The VCC pin is used to supply the  
source voltage to the device. Operations at invalid VCC voltages may produce spurious results  
and should not be attempted.  
VCC  
-
-
Power  
Power  
GROUND: VSS is the reference for the VCC supply voltage. The ground reference for the  
power supply. GND should be connected to the system ground.  
GND  
AT25QL641  
DS-25QL641–130E–10/2018  
5
2.  
Block Diagram  
Figure 2-1 shows a block diagram of the AT25QL641 serial Flash.  
Figure 2-1. AT25QL641 Block Diagram  
RESET*  
Control and  
Protection Logic  
I/O Buffers  
and Latches  
CS  
SRAM  
Data Buffer  
SCK  
Interface  
Control  
SI (I/O )  
0
And  
Logic  
Y-Decoder  
X-Decoder  
Y-Gating  
SO (I/O )  
1
Flash  
Memory  
Array  
WP (I/O  
2,  
ACC)  
HOLD  
(I/O )  
3
Note: I/O pin naming convention is used for Dual-I/O and Quad-I/O commands.  
3-0  
* Hardware-controlled RESET available ONLY on packages with greater than eight pins.  
AT25QL641  
DS-25QL641–130E–10/2018  
6
3.  
Memory Array  
To provide the greatest flexibility, the memory array of the AT25QL641 can be erased in four levels of granularity  
including a full chip erase. The size of the erase blocks is optimized for both code and data storage applications, allowing  
both code and data segments to reside in their own erase regions. Figure 3-1 illustrates the the breakdown of each erase  
level.  
Figure 3-1. Memory Architecture Diagram  
Block Erase Detail  
Page Program Detail  
64KB  
32KB  
4KB  
1-256 byte  
Block Address  
Range  
Page Address  
Range  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
7FFFFFh – 7FF000h  
7FEFFFh – 7FE000h  
7FDFFFh – 7FD000h  
7FCFFFh – 7FC000h  
7FBFFFh – 7FB000h  
7FAFFFh – 7FA000h  
7F9FFFh – 7F9000h  
7F8FFFh – 7F8000h  
7F7FFFh – 7F7000h  
7F6FFFh – 7F6000h  
7F5FFFh – 7F5000h  
7F4FFFh – 7F4000h  
7F3FFFh – 7F3000h  
7F2FFFh – 7F2000h  
7F1FFFh – 7F1000h  
7F0FFFh – 7F0000h  
7EFFFFh – 7EF000h  
7EEFFFh – 7EE000h  
7EDFFFh – 7ED000h  
7ECFFFh – 7EC000h  
7EBFFFh – 7EB000h  
7EAFFFh – 7EA000h  
7E9FFFh – 7E9000h  
7E8FFFh – 7E8000h  
7E7FFFh – 7E7000h  
7E6FFFh – 7E6000h  
7E5FFFh – 7E5000h  
7E4FFFh – 7E4000h  
7E3FFFh – 7E3000h  
7E2FFFh – 7E2000h  
7E1FFFh – 7E1000h  
7E0FFFh – 7E0000h  
7FFFFFh – 7FFF00h  
7FFEFFh – 7FFE00h  
7FFDFFh – 7FFD00h  
7FFCFFh – 7FFC00h  
7FFBFFh – 7FFB00h  
7FFAFFh – 7FFA00h  
7FF9FFh – 7FF900h  
7FF8FFh – 7FF800h  
7FF7FFh – 7FF700h  
7FF6FFh – 7FF600h  
7FF5FFh – 7FF500h  
7FF4FFh – 7FF400h  
7FF3FFh – 7FF300h  
7FF2FFh – 7FF200h  
7FF1FFh – 7FF100h  
7FF0FFh – 7FF000h  
7FEFFFh – 7FEF00h  
7FEEFFh – 7FEE00h  
7FEDFFh – 7FED00h  
7FECFFh – 7FEC00h  
7FEBFFh – 7FEB00h  
7FEAFFh – 7FEA00h  
7FE9FFh – 7FE900h  
7FE8FFh – 7FE800h  
32KB  
32KB  
32KB  
32KB  
64KB  
64KB  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
256 bytes  
0017FFh – 001700h  
0016FFh – 001600h  
0015FFh – 001500h  
0014FFh – 001400h  
0013FFh – 001300h  
0012FFh – 001200h  
0011FFh – 001100h  
0010FFh – 001000h  
000FFFh – 000F00h  
000EFFh – 000E00h  
000DFFh – 000D00h  
000CFFh – 000C00h  
000BFFh – 000B00h  
000AFFh – 000A00h  
0009FFh – 000900h  
0008FFh – 000800h  
0007FFh – 000700h  
0006FFh – 000600h  
0005FFh – 000500h  
0004FFh – 000400h  
0003FFh – 000300h  
0002FFh – 000200h  
0001FFh – 000100h  
0000FFh – 000000h  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
4KB  
00FFFFh – 00F000h  
00EFFFh – 00E000h  
00DFFFh – 00D000h  
00CFFFh – 00C000h  
00BFFFh – 00B000h  
00AFFFh – 00A000h  
009FFFh – 009000h  
008FFFh – 008000h  
007FFFh – 007000h  
006FFFh – 006000h  
005FFFh – 005000h  
004FFFh – 004000h  
003FFFh – 003000h  
002FFFh – 002000h  
001FFFh – 001000h  
000FFFh – 000000h  
32KB  
64KB  
32KB  
AT25QL641  
DS-25QL641–130E–10/2018  
7
4.  
Device Operation  
4.1  
Standard SPI Operation  
The AT25QL641 features a serial peripheral interface on four signals: Serial Clock (SCK). Chip Select (CS), Serial  
Data Input (SI) and Serial Data Output (SO). Standard SPI instructions use the SI input pin to serially write instructions,  
addresses or data to the device on the rising edge of SCK. The SO output pin is used to read data or status from the  
device on the falling edge of SCK.  
SPI bus operation Modes 0 (0, 0) and 3 (1, 1) are supported. The primary difference between Mode 0 and Mode 3  
concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not being transferred  
to the Serial Flash. For Mode 0 the SCK signal is normally low on the falling and rising edges of CS. For Mode 3 the  
SCK signal is normally high on the falling and rising edges of CS.  
4.2  
4.3  
Dual SPI Operation  
The AT25QL641 supports Dual SPI operation. This instruction allows data to be transferred to or from the device at two  
times the rate of the standard SPI. The Dual Read instruction is ideal for quickly downloading code to RAM upon power-  
up (code-shadowing) or for execute-in-place (XiP) non-speed-critical code directly from the SPI bus. When using Dual  
SPI instructions the SI and SO pins become bidirectional I/0 pins; I/O0 and I/O1.  
Quad SPI Operation  
The AT25QL641 supports Quad SPI operation. This instruction allows data to be transferred to or from the device at  
four times the rate of the standard SPI. The Quad Read instruction offers a significant improvement in continuous  
and random access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus. When  
using Quad SPI instruction the SI and SO pins become bidirectional I/O0 and I/O1, and the WP and HOLD pins become  
I/O2 and I/O3 respectively. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be  
set.  
4.4  
QPI Operation  
The AT25QL641 is shipped with the Quad Enable bit set and the device powers up in QPI mode. When using QPI  
instructions, the SI and SO pins become bidirectional I/O0 and I/O1, and the WP and HOLD pins become I/O2 and I/O3  
respectively.  
The typical SPI protocol requires that the byte-long instruction code being shifted into the device only via SI pin in eight  
serial clocks. The QPI mode utilizes all four I/O pins to input the instruction code, thus only two serial clocks are required.  
This can significantly reduce the SPI instruction overhead and improve system performance in an XiP environment.  
Standard/ Dual/ Quad SPI mode and QPI mode are exclusive. Only one mode can be active at any given time, Enable  
QPI (38h) and Disable QPI (FFh) instructions are used to switch between these two modes. Upon power-up or after  
software reset using Reset (99h) instruction, the default state of the device is Standard/Dual/Quad SPI mode.  
AT25QL641  
DS-25QL641–130E–10/2018  
8
5.  
Write Protection  
To protect inadvertent writes by the possible noise, several means of protection are applied to the Flash memory.  
5.1  
Write Protect Features  
The write protect features are listed below.  
ò
ò
While Power-on reset, all operations are disabled and no instruction is recognized.  
An internal time delay of tPUW can protect the data against inadvertent changes while the power supply is outside  
the operating specification. This includes the Write Enable, Page Program, Block Erase, Chip Erase, Write Security  
Register and the Write Status Register commands.  
ò
ò
For data changes, Write Enable instruction must be issued to set the Write Enable Latch (WEL) bit to “0”. Power-  
up, Completion of Write Disable, Write Status Register, Page Program, Block Erase and Chip Erase are subjected to  
this condition.  
Status Register protect (SRP) and Block protect (SEC, TB, BP2, BP1, and BP0) bits may be used to configure a  
portion of the memory as read-only (software protection).  
ò
ò
The Write Protect (WP) pin can be used to change the Status register (hardware control).  
The Deep Power Down (DPD) mode provides extra protection from unexpected data changes as all instructions are  
ignored under this status except for the ‘Release from Deep Power Down’ instruction.  
AT25QL641  
DS-25QL641–130E–10/2018  
9
6.  
Status Registers  
The Read Status Register instruction can be used to provide status on the availability of the Flash memory array, if the device  
is write enabled or disabled, the state of write protection, and the Quad SPI setting. The Write Status Register instruction can  
be used to configure the devices write protection features and Quad SPI setting. Write access to the Status register is  
controlled, in some cases, by the WP pin.  
Table 6-1. Status Register-1  
S7  
S6  
S5  
S4  
S3  
S2  
S1  
S0  
SRP  
SEC  
TB  
BP2  
BP1  
BP0  
WEL  
BUSY  
Status  
Register  
Protect 0  
Sector Protect Top/Bottom  
(Non- Volatile) Write Protect (Non- Volatile) (Non- Volatile) (Non- Volatile)  
(Non- Volatile)  
Block Protect Block Protect Block Protect Write Enable Erase or Write  
Latch  
in Progress  
(Non- Volatile)  
Table 6-2. Status Register-2  
S15  
S14  
S13  
(R)  
S12  
(R)  
S11  
(R)  
S10  
(R)  
S9  
S8  
SUS  
CMP  
QE  
SRP1  
Suspend  
Status  
Complement  
Protect  
Reserved  
Reserved  
Reserved  
Reserved  
Quad Enable  
(Non-Volatile)  
Register  
Protect 1  
(Non-Volatile)  
(Non-Volatile)  
6.1  
Busy  
BUSY is a read-only bit (S0) that is set to a 1 state when the device is executing a Page Program, Erase, Write Status Register  
or Write Security Register instruction. During this time the device will ignore further instruction except for the Read Status  
Register and Erase / Program Suspend instruction (see tW, tPP, tSE, tBE1, tBE2 and tCE in Table 8-7, AC Electrical Characteristics).  
When the Program, Erase, Write Status Register or Write Security Register command has completed, hardware clears the  
BUSY bit (to a 0 state), indicating the device is ready for further instructions.  
6.2  
6.3  
Write Enable Latch (WEL)  
Write Enable Latch (WEL) is a read only bit in status register (S1) that is set to a 1 after executing a Write Enable instruction.  
The WEL status bit is cleared to a 0 when device is write disabled. A write disable state occurs upon power-up or after any of  
the following instructions: Write Disable, Page Program, Erase and Write Status Register.  
Block Protect Bits (BP2, BP1, BP0)  
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits (S4, S3, and S2) that provide write protection control and  
status. Block protect bits can be set using the Write Status Register Instruction (see tW in Table 8-7, AC Electrical  
Characteristics). All, none or a portion of the memory array can be protected from Program and Erase commands (see Status  
Register Memory Protection table). The factory default setting for the Block Protection Bits is 0, none of the array protected.  
6.4  
Top/Bottom Block Protect (TB)  
The Top/Bottom bit (TB) is non-volatile bits (S5) that controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB  
= 0) or the Bottom (TB = 1) of the array as shown in the Status Register Memory Protection table. The factory default setting is  
TB = 0. The TB bit can be set with the Write Status Register Instruction depending on the state of the SRP0, SRP1, and WEL  
bits.  
AT25QL641  
DS-25QL641–130E–10/2018  
10  
6.5  
6.6  
Sector/Block Protect (SEC)  
The Sector protect bit (SEC) is a non-volatile bit (S6) that controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB Sectors  
(SEC = 1) or 64 KB blocks (SEC = 0) in the Top (TB = 0) or the Bottom (TB = 1) of the array as shown in the Status Register  
Memory protection table. The default setting is SEC = 0.  
Status Register Protect (SRP1, SRP0)  
The Status Register Protect bits (SRP1 and SRP0) are non  
-
volatile read/write bits in the status register (S8 and S7)  
. The  
SRP bits control the method of write protection: software protection, hardware protection  
,
power supply lock down or one time  
-
programmable (OTP) protection  
.
Table 6-3. Protection Types  
SRP1  
SRP0  
WP  
Type of Protection  
Description  
WP pin no control. The register can be written to after a Write Enable  
command, WEL = 1 (factory default)  
0
0
X
Software Protection  
When WP pin is low the Status Register locked and can not be written  
to.  
0
0
1
1
1
1
0
1
0
1
Hardware Protected  
Hardware  
Unprotected  
When WP pin is high the Status register is unlocked and can be  
written to after a Write Enable command, WEL = 1.  
Power Supply  
Lock-Down  
Status Register is protected and cannot be written to again until the  
(1)  
next power down, power-up cycle  
X
X
Status Register is permanently protected and cannot be written to.  
One Time Program  
Note: 1. When SRP1, SRP0=(1,0), a power down, power-up cycle will change SRP1, SRP0 to(0,0) state.  
6.7  
Quad Enable (QE)  
The Quad Enable (QE) bit is a non-volatile read/write bit (S9) that allows Quad operation. When the QE bit is set to  
a 0 state (factory default) the WP pin and HOLD are enabled. When the QE pin is set to a 1 the Quad I/O2 and I/O3 pins  
are enabled.  
WARNING: The QE bit should never be set to a 1 during standard SPI or Dual SPI operation if the WP or HOLD  
pins are tied directly to the power supply or ground.  
6.8  
6.9  
Complement Protect (CMP)  
The Complement Protect bit (CMP) is a non-volatile read/write bit (S14). It is used in conjunction with SEC, TB, BP2,  
BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array protection set  
by SEC, TB, BP2, BP1 and BP0 is reversed. For instance, when CMP = 0, a top 4KB sector can be protected while the  
rest of the array is not; when CMP = 1, the top 4KB sector becomes unprotected while the rest of the array becomes  
read-only. For more information, refer to Table and Table 6-5 below. The default setting is CMP = 0.  
Erase/Program Suspend Status (SUS)  
The Suspend Status bit (SUS) is a read only bit in the status register (S15) that is set to 1 after executing an Erase/Program  
Suspend (75h) instruction  
down power up cycle  
. The SUS status bit is cleared to 0 by Erase/Program Resume (7Ah) instruction as well as a power  
,
-
.
AT25QL641  
DS-25QL641–130E–10/2018  
11  
Table 6-4. Status Register Memory Protection (CMP = 0)  
Status Register Bits  
Memory Protection  
SEC  
TB  
X
BP2  
BP1  
BP0  
Sector(s)  
Address Range  
NONE  
Density  
Portion of Memory  
NONE  
X
0
0
0
0
0
0
0
1
0
1
NONE  
NONE  
0
126 and 127 7E0000h - 7FFFFFh 128 KB  
124 thru 127 7C0000h - 7FFFFFh 256 KB  
120 thru 127 780000h - 7FFFFFh 512 KB  
Upper 1/64  
Upper 1/32  
0
0
0
0
0
0
0
0
0
0
0
0
X
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
0
1
1
1
0
0
0
1
1
1
1
0
0
0
1
0
0
0
1
1
0
0
1
0
1
1
0
0
1
1
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
1
0
1
X
1
0
1
X
Upper 1/16  
Upper 1/8  
Upper 1/4  
Upper 1/2  
Lower 1/64  
Lower 1/32  
Lower 1/16  
Lower 1/8  
Lower 1/4  
Lower 1/2  
ALL  
112 thru 127 700000h - 7FFFFFh  
1 MB  
2 MB  
4 MB  
96 thru 127  
64 thru 127  
0 and 1  
0 thru 3  
0 thru 7  
0 thru 15  
0 thru 31  
0 thru 63  
0 thru 127  
127  
600000h - 7FFFFFh  
400000h - 7FFFFFh  
000000h - 01FFFFh 128 KB  
000000h - 03FFFFh 256 KB  
000000h - 07FFFFh 512 KB  
000000h - 0FFFFFh  
000000h - 1FFFFFh  
000000h - 3FFFFFh  
000000h - 7FFFFFh  
7FF000h - 7FFFFFh  
7FE000h - 7FFFFFh  
7FC000h - 7FFFFFh  
7F8000h - 7FFFFFh  
000000h - 000FFFh  
000000h - 001FFFh  
000000h - 003FFFh  
000000h - 007FFFh  
1 MB  
2 MB  
4 MB  
8 MB  
4 KB  
U – 1/2048 (Note 4)  
U – 1/1024  
U – 1/512  
U – 1/256  
L – 1/2048  
L – 1/1024  
L – 1/512  
127  
8 KB  
127  
16 KB  
32 KB  
4 KB  
127  
0
0
8 KB  
0
16 KB  
32 KB  
0
L – 1/256  
Note:  
1.  
X = Don’t care  
L = Lower; U = Upper  
2.  
3.  
If any Erase or Program instruction specifies a memory region that contains protected data portion, this instruction will  
be ignored.  
4.  
Note 3 does not apply to this Status Register Bit setting. See Errata 1 in Appendix A for details.  
AT25QL641  
DS-25QL641–130E–10/2018  
12  
Table 6-5. Status Register Memory Protection (CMP = 1)  
Status Register Bits  
Memory Protection  
SEC  
X
0
TB  
X
0
0
0
0
0
0
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
BP2  
BP1  
BP0  
Sector(s)  
0 thru 127  
0 thru 125  
0 and 121  
0 thru 119  
0 thru 111  
0 thru 95  
Address Range  
Density  
Portion of Memory  
ALL  
0
0
0
000000h - 7FFFFFh  
8 MB  
0
0
1
000000h – 7DFFFFh 8,064 KB  
000000h – 7BFFFFh 7,936 KB  
000000h – 77FFFFh 7,680 KB  
000000h – 6FFFFFh 7,168 KB  
Lower 63/64  
Lower 31/32  
Lower 15/16  
Lower 7/8  
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
000000h – 5FFFFFh  
000000h – 3FFFFFh  
6 MB  
4 MB  
Lower 3/4  
0
1
1
0
0 thru 63  
Lower 1/2  
0
0
0
1
2 thru 127  
4 and 127  
8 thru127  
16 thru 127  
32 thru 127  
64 thru 127  
NONE  
020000h - 7FFFFFh 8,064 KB  
040000h - 7FFFFFh 7,936 KB  
080000h - 7FFFFFh 7,680 KB  
100000h - 7FFFFFh 7,168 KB  
Upper 63/64  
Upper 31/32  
Upper 15/16  
Upper 7/8  
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
200000h - 7FFFFFh  
400000h - 7FFFFFh  
NONE  
6 MB  
4 MB  
Upper 3/4  
0
1
1
0
Upper 1/2  
X
1
1
1
1
NONE  
NONE  
0
0
1
0 thru 127  
0 thru 127  
0 thru 127  
0 thru 127  
0 thru 127  
0 thru 127  
0 thru 127  
0 thru 127  
000000h - 7FEFFFh 8,188 KB  
000000h - 7FDFFFh 8,184 KB  
000000h - 7FBFFFh 8,176 KB  
000000h - 7F7FFFh 8,160 KB  
L – 2047/2048  
L – 1023/1024  
L – 511/512  
L – 255/256  
1
0
1
0
1
0
1
1
1
1
0
X
1
1
0
0
001000h - 7FFFFFh 8,188 KB U – 2047/2048 (Note 4)  
1
0
1
0
002000h - 7FFFFFh 8,184 KB  
004000h - 7FFFFFh 8,176 KB  
008000h - 7FFFFFh 8,160 KB  
U – 1023/1024  
U – 511/512  
1
0
1
1
1
1
0
X
U – 255/256  
Note:  
1.  
X = don’t care  
L = Lower; U = Upper  
2.  
3.  
If any Erase or Program instruction specifies a memory region that contains protected data portion, this instruction will be ignored.  
4.  
Note 3 does not apply to this Status Register Bit setting. See Errata 2 in Appendix A for details.  
AT25QL641  
DS-25QL641–130E–10/2018  
13  
7.  
Instructions  
The SPI instruction set of the AT25QL641 consists of thirty eight basic instructions and the QPI instruction set of the  
AT25QL641 consists of thirty one basic instructions that are fully controlled through the SPI bus (see Instruction Set  
table). Instructions are initiated with the falling edge of Chip Select (CS). The first byte of data clocked into the input  
pins (SI or I/O [3:0]) provides the instruction code. Data on the SI input is sampled on the rising edge of clock with  
most significant bit (MSB) first.  
Instructions are completed with the rising edge of edge CS. All read instructions can be completed after any clocked  
bit. However, all instructions that Write, Program or Erase must complete on a byte (CS driven high after the full 8 bits  
has been clocked) otherwise the instruction is terminated. This feature further protects the device from inadvertent  
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is being written, all  
commands except for Read Register are ignored until the program or erase cycle has completed.  
Table 7-1. Manufacturer and Device Identification  
ID code  
Instruction  
Manufacturer ID  
Device ID  
Adesto  
AT25QL641  
SPI / QPI  
64M  
1Fh  
16h  
43h  
17h  
90h, 92h, 94h, 9Fh  
90h, 92h, 94h, ABh  
Memory Type ID  
Capacity Type ID  
9Fh  
9Fh  
7.1  
Instruction Tables  
(1)  
Table 7-2. Instruction Set Table 1 (SPI Instructions)  
Instruction Byte  
Clock Number  
Write Enable  
0
1
2
3
4
5
0 - 7  
06h  
50h  
8 - 15  
16 - 23  
24 - 31  
32 - 39  
40 - 47  
Write Enable  
(for volatile Status registers)  
Write Disable  
Read Status Register 1  
Read Status Register 2  
Write Status Register 1  
Write Status Register 2  
Read Data  
04h  
05h  
SR7:SR0 (2)  
SR15:SR8(2)  
SR7:SR0  
SR15:SR8  
A23:A16  
35h  
01h  
SR15:SR8  
31h  
03h  
A15:A8  
A15:A8  
A15:A8  
A7:A0  
A7:A0  
A7:A0  
D7:D0  
Dummy  
D7:D0 (3)  
Fast Read Data  
0Bh  
02h  
A23:A16  
D7:D0  
Page Program  
A23:A16  
Enable QPI  
38h  
Block Erase (4 KB)  
Block Erase (32 KB)  
Block Erase (64 KB)  
Chip Erase  
20h  
A23:A16  
A23:A16  
A23:A16  
A15:A8  
A15:A8  
A15:A8  
A7:A0  
A7:A0  
A7:A0  
52h  
D8h  
60h/7Ch  
AT25QL641  
DS-25QL641–130E–10/2018  
14  
Table 7-2. Instruction Set Table 1 (SPI Instructions) (Continued) (1)  
Instruction Byte  
Clock Number  
0
1
2
3
4
5
0 - 7  
75h  
7Ah  
B9h  
ABh  
8 - 15  
16 - 23  
24 - 31  
32 - 39  
40 - 47  
Erase/Program Suspend  
Erase/Program Resume  
Deep Power Down  
Release from Deep Power  
Down/Device ID  
Dummy  
Dummy  
Dummy  
D7:D0(2)  
Read Manufacturer ID (4)  
Read JEDEC ID  
90h  
9Fh  
66h  
99h  
B1h  
C1h  
2Bh  
2Fh  
5Ah  
00h  
00h  
00h or 01h  
D7:D0  
MID7:MID0  
DID7:DID0  
MID7:MID0  
D7:D0  
Reset Enable  
Reset  
Enter Secured OTP  
Exit Secured OTP  
Read Security Register  
Write Security Register  
SC7:SC0 (5)  
A23:A16  
Read Serial Flash  
A15:A8  
A7:A0  
Dummy  
D7:D0  
Discovery Parameters  
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being read from the device on the I/O pin.  
2. SR = status register, The Status Register contents and Device ID repeats continuously until CS terminates the instruction.  
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security Register, up to 256 bytes of data input. If more  
than 256 bytes of data are sent to the device, the addressing will wrap to the beginning of the page and overwrite previously sent data.  
4. See Manufacturer and Device Identification table for Device ID information.  
5. SC = security register.  
Table 7-3. Instruction Set Table 2 (Dual SPI Instructions)  
Instruction Byte  
Clock Number  
0
1
2
3
4
5
0 - 7  
3Bh  
BBh  
8 - 15  
16 - 23  
A15:A8  
24 - 31  
A7:A0  
32 - 39  
Dummy  
40 - 47  
D7:D0 (1)  
Fast Read Dual Output  
Fast Read Dual I/O  
A23:A16  
A23:A8 (2)  
A7:A0,  
D7:D0....(1)  
M7:M0(2)  
Read Manufacturer ID (3)  
92h  
0000h  
(00h, xxxx) or MID7:MID0  
01h, xxxx)  
DID7:DID0(1)  
1. Dual Output data: I/O0 = (D6, D4, D2, D0), I/O1 = (D7, D5, D3, D1)  
2. Dual input address:  
I/O0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0  
I/O1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1  
3. See Manufacturer and Device Identification table for Device ID information.  
AT25QL641  
DS-25QL641–130E–10/2018  
15  
Table 7-4. Instruction Set Table 3 (Quad SPI Instructions)  
Instruction Byte  
Clock Number  
0
1
2
3
4
5
0 - 7  
6Bh  
EBh  
8 - 15  
16 - 23  
A15:A8  
24 - 31  
A7:A0  
32 - 39  
Dummy  
40 - 47  
D7:D0 (1)  
Fast Read Quad Output  
Fast Read Quad I/O  
A23:A16  
A23:A0,  
(xxxx,  
D7:D0....(1)  
M7:M0 (2)  
D7:D0...) (3)  
Quad Page Program  
33h  
94h  
A23:A0  
(D7:D0, ...)(1)  
Read Quad Manufacturer ID (4)  
00_0000h, xx  
or  
(xxxx,  
MID7:MID0)  
(xxxx,  
00_00001h, xx  
DID7:DID0)(3)  
Fast Read Quad I/O  
Set Burst with Wrap  
EBh  
77h  
A23:A0  
(xx, D7:D0)  
D7:D0(1)  
M7:M0(2)  
xxxxxx,  
W6:W4 (5)  
1. Quad Input/ Output Data  
I/O0 = (D4, D0...)  
I/O1 = (D5, D1...)  
I/O2 = (D6, D2...)  
I/O3 = (D7, D3...)  
2. Quad Input Address  
I/O0 = A20, A16, A12, A8, A0, M4, M0  
I/O1 = A21, A17, A13, A9, A1, M5, M1  
I/O2 = A22, A18, A14, A10, A2, M6, M2  
I/O3 = A23, A19, A15, A11, A3, M7, M3  
3. Fast Read Quad I/O Data Output  
I/O0 = (x, x, x, x, D4, D0...)  
I/O1 = (x, x, x, x, D5, D1...)  
I/O2 = (x, x, x, x, D6, D2...)  
I/O3 = (x, x, x, x, D7, D3...)  
4. See Manufacturer and Device Identification table for Device ID information.  
5. Set Burst With Wrap  
I/O0 = x, x, x, x, x, x, W4, x  
I/O1 = x, x, x, x, x, x, W5, x  
I/O2 = x, x, x, x, x, x, W6, x  
I/O3 = x, x, x, x, x, x, W7, x  
Table 7-5. Instruction Set Table 4 (QPI Instructions)  
Instruction Byte (1)  
Clock Number  
Write Enable  
0
1
2
3
4
5
6
7
8
0, 1  
06h  
50h  
2, 3  
4, 5  
6, 7  
8, 9  
10, 11  
12, 13  
14, 15 16, 17  
Write Enable  
(for volatile Status registers)  
Write Disable  
04h  
Read Status Register 1  
05h (SR7:SR0)(2)  
AT25QL641  
DS-25QL641–130E–10/2018  
16  
Table 7-5. Instruction Set Table 4 (QPI Instructions) (Continued)  
Instruction Byte (1)  
0
1
2
3
4
5
6
7
8
Clock Number  
0, 1  
35h  
2, 3  
4, 5  
6, 7  
8, 9  
10, 11  
12, 13  
14, 15 16, 17  
Read Status Register 2  
(SR15:SR8)  
(2)  
Write Status Register 1(2)  
Write Status Register 2  
01h  
31h  
0Bh  
(SR7:SR0) (SR15:SR8)  
(SR15:SR8)  
Fast Read Data up to 80  
MHz  
A23:A16  
A23:A16  
A23:A16  
A15:A8  
A15:A8  
A15:A8  
A7:A0 Dummy Dummy (D7:D0)  
up to 104  
MHz  
A7:A0 Dummy Dummy Dummy (D7:D0)  
Page Program  
02h  
A7:A0 (D7:D0)  
(3)  
Block Erase (4 KB)  
Block Erase (32 KB)  
Block Erase (64 KB)  
Chip Erase  
20h  
52h  
A23:A16  
A23:A16  
A23:A16  
A15:A8  
A15:A8  
A15:A8  
A7:A0  
A7:A0  
A7:A0  
D8h  
60h/7Ch  
75h  
Erase/Program Suspend  
Erase/Program Resume  
Deep Power Down  
7Ah  
B9h  
Release from Deep  
Power Down  
ABh  
Read Manufacturer/  
Device ID (4)  
90h  
00h  
00h  
00h or  
01h  
(MID7:  
MID0)  
(DID7:  
DID0)  
Read JEDEC ID  
9Fh (MID7:MID0) (D7:D0)  
(D7:D0)  
(Cap)  
(Mfg ID)  
(Mem Typ)  
Enter Secured OTP  
Exit Secured OTP  
B1h  
C1h  
Read Security Register  
Write Security Register  
2Bh (SC7:SC0)(5)  
2Fh  
Fast Read  
Quad I/O  
up to 80  
MHz  
EBh  
A23:A16  
A23:A16  
A23:A16  
A15:A8  
A15:A8  
A15:A8  
A7:A0 (M7:M0) Dummy (D7:D0)  
up to 104  
MHz  
A7:A0 (M7:M0) Dummy Dummy (D7:D0)  
A7:A0 (M7:M0) Dummy Dummy Dummy (D7:D0)  
up to 133  
MHz  
Reset Enable  
66h  
99h  
FFh  
Reset  
Disable QPI  
AT25QL641  
DS-25QL641–130E–10/2018  
17  
Table 7-5. Instruction Set Table 4 (QPI Instructions) (Continued)  
Instruction Byte (1)  
0
1
2
3
4
5
6
7
8
Clock Number  
0, 1  
0Ch  
2, 3  
4, 5  
6, 7  
8, 9  
10, 11  
12, 13  
14, 15 16, 17  
Burst Read with up to 80  
A23:A16  
A15:A8  
A7:A0 Dummy Dummy (D7:D0)  
Wrap  
MHz  
up to 104  
MHz  
A23:A16  
A23:A16  
A15:A8  
A15:A8  
A7:A0 Dummy Dummy Dummy (D7:D0)  
up to 133  
MHz  
A7:A0 Dummy Dummy Dummy Dummy (D7:D0)  
Set Read Parameter  
Quad Page Program  
C0h  
33h  
P7:P0  
A23:A16  
A15:A8  
A7:A0 (D7:D0)  
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being read from the device on the I/O pin.  
2. SR = Status Register. The Status Register contents and Device ID will repeat continuously until CS terminates the instruction.  
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security Register, up to 256 bytes of data input. If more  
than 256 bytes of data are sent to the device, the addressing will wrap to the beginning of the page and overwrite previously sent data.  
4. See Manufacturer and Device Identification table for Device ID information.  
5. SC = Security Register.  
7.2  
Write Enable (06h)  
Write Enable instruction is for setting the Write Enable Latch (WEL) bit in the Status Register  
.
The WEL bit must be set prior to  
CS goes low prior to the  
every Program Erase and Write Status Register instruction To enter the Write Enable instruction,  
,
.
instruction “06h” into Data Input (SI) pin on the rising edge of SCK, and then driving CS high  
.
Figure 7-1. Write Enable Instruction for SPI Mode (left) and QPI Mode (right)  
7.3  
Write Enable for Volatile Status Register (50h)  
This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting  
for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. To write the  
volatile values into the Status Register bits, the Write Enable for Volatile Status Register (50h) instruction must be issued  
prior to a Write Status Register (01h) instruction. Write Enable for Volatile Status Register instruction (Figure 7-2) does  
not set the Write Enable Latch (WEL) bit. Once Write Enable for Volatile Status Register is set, a Write Enable  
instruction should not have been issued prior to setting Write Status Register instruction (01h or 31h). When Write  
AT25QL641  
DS-25QL641–130E–10/2018  
18  
Enable for Volatile Status Register (50h) is set in QPI Mode, the SUS bit (S15) and Reserved bits (S13, S12, S11 and  
S10) of Status Register-2 must be driven to high after Write Status Register instruction (01h). Once Read Status Register  
(05h or 35h) is issued the read values of SUS bit (S15) and Reserved bits (S13, S12, S11 and S10) of the Status  
Register-2 are ignored.  
Figure 7-2. Write Enable for Volatile Status Register Instruction for SPI Mode (left) and QPI Mode (right)  
7.4  
Write Disable (04h)  
The Write Disable instruction is used to reset the Write Enable Latch (WEL) bit in the Status Register  
Disable instruction CS goes low prior to the instruction “04h” into Data Input (SI) pin on the rising edge of SCK, and then  
driving CS high The WEL bit is automatically reset write- disable status of “0” after power up and upon completion of the  
every Program Erase and Write Status Register instructions  
. To enter the Write  
,
.
-
,
.
Figure 7-3. Write Disable Instruction for SPI Mode (left) and QPI Mode (right)  
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7.5  
Read Status Register-1 (05h) and Read Status Register-2 (35h)  
The Read Status Register instructions are to read the Status register. The Read Status Register instructions can be  
executed at any time (even in the Program/Erase/Write Status Register and Write Security Register conditions). It is  
recommended to check the BUSY bit before sending a new instruction when a Program, Erase, Write Status  
Register or Write Status Register operation is in progress.  
The instruction is entered by driving CS low and sending the instruction code “05h” for Status Register-1 or “35h” for Status  
Register-2 into the SI pin on the rising edge of SCK. The status register bits are then shifted out on the SO pin at the falling  
edge of SCK with most significant bit (MSB) first as shown in (Figure 7-4 and Figure 7-5). The Status Register can be read  
continuously. The instruction is completed by driving CS high.  
Figure 7-4. Read Status Register Instruction (SPI Mode)  
Figure 7-5. Read Status Register Instruction (QPI Mode)  
7.6  
Write Status Register (01h)  
The Write Status Register instruction is us ed to write only the non-volatile Status Register-1 bit SRP0, and Status  
Register-2 bits QE and SRP1. All other Status Register bit locations are read-only and are not affected by the Write  
Status Register instruction.  
A Write Enable instruction must previously have been issued prior to setting Write Status Register Instruction (Status  
Register bit WEL must equal 1). Once the write is enabled, the instruction is entered by driving CS low, sending the  
instruction code, and then writing the status register data byte as illustrated in Figure 7-6 and Figure 7-7.  
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The CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not done the Write  
Status Register instruction will not be executed. If CS is driven high after the eighth clock, the CMP, QE and SRP1  
(Status Register 2) bits are cleared to 0. After CS is driven high, the self- timed Write Status Register cycle commences  
for a time duration of tW (see Table 8-7, AC Electrical Characteristics).  
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be accessed to  
check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a 0 when the  
cycle is finished and ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable Latch  
(WEL) bit in Status Register is cleared to 0.  
Figure 7-6. Write Status Register Instruction (SPI Mode)  
Figure 7-7. Write Status Register Instruction (QPI Mode)  
7.7  
Write Status Register-2 (31h)  
The Write Status Register-2 instruction is used to write only non-volatile Status Register-2 bits CMP, QE and SRP1.  
A Write Enable instruction must previously have been issued prior to setting Write Status Register Instruction (Status  
Register bit WEL must equal 1). Once write is enabled, the instruction is entered by driving CS low, sending the  
instruction code, and then writing the status register data byte as illustrated in Figure 7-8 and Figure 7-9.  
Using the Write Status Register-2 (31h) instruction  
different instruction  
, software can individually access each one-byte Status register via a  
.
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Figure 7-8. Write Status Register-2 Instruction (SPI Mode)  
Figure 7-9. Write Status Register-2 Instruction (QPI Mode)  
7.8  
Read Data (03h)  
The Read Data instruction is to read data out from the device  
.
The instruction is initiated by driving the CS pin low and then  
After the address is received the  
sending the instruction code “03h” with following a 24 bit address (A23 - A0) into the SI pin  
-
.
,
data byte of the addressed memory location is shifted out on the SO pin at the falling edge of SCK with the most significant bit  
(MSB) first. The address is automatically incremented to the next higher address after byte of data is shifted out allowing for a  
continuous stream of data  
continues The instruction is completed by driving CS high. The Read Data instruction sequence is shown in Figure 7-10. If a  
Read Data instruction is issued while an Erase Program or Write Status Register cycle is in process (BUSY = 1) the instruction  
is ignored and does not have any effects on the current cycle  
maximum of f (see Table 8-7, AC Electrical Characteristics).  
. This means that the entire memory can be accessed with a single instruction as long as the clock  
.
,
.
The Read Data instruction allows clock rates from D.C to a  
R
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Figure 7-10. Read Data Instruction  
7.9  
Fast Read (0Bh)  
The Fast Read instruction is high speed reading mode that it can operate at the highest possible frequency of FR  
. The address  
is latched on the rising edge of the SCK. After the 24  
Figure 7-11 The dummy clocks means the internal circuits require time to set up the initial address  
the data value on the SO pin is a “don’t care” Data of each bit shifts out on the falling edge of SCK.  
-
bit address  
,
this is accomplished by adding “dummy” clocks as shown in  
.
.
During the dummy clocks,  
.
Figure 7-11. Fast Read Instruction (SPI Mode)  
7.10 Fast Read in QPI Mode  
When QPI mode is enabled, the number of dummy clock is configured by the “Set Read Parameters (C0h)” instruction to  
accommodate wide range applications with different needs for either maximum Fast Read frequency or minimum data  
access latency. Depending on the Read Parameter Bit P[4] and P[5] setting, the number of dummy clocks can be  
configured as either 4, or 6 or 8. The default number of dummy clocks upon power up or after a Reset instruction is 4.  
Refer to Figure 7-12 and Figure 7-13 below.  
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Figure 7-12. Fast Read instruction (QPI Mode, 80 MHz)  
Figure 7-13. Fast Read instruction (QPI Mode, 104 MHz)  
7.11 Fast Read Dual Output (3Bh)  
By using two pins (I/O  
0
and I/O  
1
, instead of just I/O  
0
) The Fast Read Dual Output instruction allows data to be transferred  
,
from the AT25QL641 at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly  
downloading code from Flash to RAM upon power-up or for application that cache code-segments to RAM for execution.  
The Fast Read Dual Output instruction can operate at the highest possible frequency of F  
Characteristics). After the 24 bit address, this is accomplished by adding eight “dummy” clocks as shown in Figure 7-14. The  
dummy clocks allow the internal circuits additional time for setting up the initial address. During the dummy clocks the data  
value on the SO pin is a “don’t care”. However  
the I/O pin should be high impedance prior to the falling edge of the first data  
out clock  
R
(see Table 8-7, AC Electrical  
-
,
,
0
-
.
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Figure 7-14. Fast Read Dual Output instruction (SPI Mode)  
7.12 Fast Read Quad Output (6Bh)  
By using four pins (I/O  
0
, I/O  
1
, I/O  
2
, and I/O  
3
), the ‘Fast Read Quad Output’ instruction allows data to be transferred from the  
AT25QL641 at four times the rate of standard SPI devices. A Quad enable of Status Register-2 must be executed before  
the device accepts the Fast Read Quad Output instruction (Status register bit QE must equal 1).  
The Fast Read Quad Output’ instruction can operate at the highest possible frequency of F (see Table 8-7, AC  
R
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in  
Figure 7-15. The dummy clocks allow the internal circuits additional time for setting up the initial address. During the  
dummy clocks, the data value on the SO pin is a “don’t care”. However, the I/O  
pin should be high-impedance prior to  
0
the falling edge of the first data out clock.  
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Figure 7-15. Fast Read Quad Output Instruction (SPI Mode)  
7.13 Fast Read Dual I/O (BBh)  
The Fast Read Dual I/O instruction reduces cycle overhead through double access using two I/O pins: I/O  
0
and I/O .  
1
Continuous read mode  
The Fast Read Dual I/O instruction can further reduce cycle overhead through setting the Mode bits (M7-0) after the  
input Address bits (A23-0). The upper nibble of the Mode (M7-4) controls the length of the next Fast Read Dual I/O  
instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0)  
are don’t care (“X”), However, the I/O pins should be high-impedance prior to the falling edge of the first data out clock.  
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Dual I/O instruction (after CS is raised and then lowered) does  
not require the instruction (BBh) code, as shown in Figure 7-16 and Figure 7-17. This reduces the instruction sequence  
by eight clocks and allows the address to be immediately entered after CS is asserted low. If Mode bits (M7-0) are any  
value other “Ax” hex, the next instruction (after CS is raised and then lowered) requires the first byte instruction code,  
thus returning to normal operation. A mode bit reset can be used to reset the mode bits (M7-0) before issuing  
normal instructions.  
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Figure 7-16. Fast Read Dual I/O Instruction (initial instruction or previous M7-0 Axh)  
Figure 7-17. Fast Read Dual I/O Instruction (previous M7-0= Axh)  
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7.14 Fast Read Quad I/O (EBh)  
The Fast Read Quad I/O instruction reduces cycle overhead through quad access using four I/O pins: I/O  
0
, I/O , I/O2, and  
1
I/O3. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast read Quad I/O Instruction.  
Continuous read mode  
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the Mode bits (M7-0) with  
following the input address bits (A23-0), as shown in Figure 7-18. The upper nibble of the mode (M7-4) controls the  
length of the next ‘Fast Read Quad I/O’ instruction through the inclusion or exclusion of the first byte instruction code.  
The lower nibble bits of the Mode (M3-0) are don’t care (“X”). However, the I/O pins should be high-impedance prior to  
the falling edge of the first data out clock.  
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Read Quad I/O instruction (after CS is raised and then  
lowered) does not require the EBh instruction code, as shown in Figure 7-19. This reduces the instruction sequence by  
eight clocks and allows the address to be immediately entered after CS is asserted low. If the Mode bits (M7-0) are any  
value other than “Ax” hex, the next instruction (after CS is raised and then lowered) requires the first byte instruction  
code, thus retuning normal operation. A Mode Bit Reset can be used to reset Mode Bits (M7-0) before issuing normal  
instructions.  
Figure 7-18. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 Axh, SPI mode)  
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Figure 7-19. Fast Read Quad I/O Instruction (previous M7-0 = Axh, SPI mode)  
Wrap Around in SPI mode  
The Fast Read Quad I/O instruction can also be used to access specific portion within a page by issuing a ‘Set Burst  
with Wrap’ (77h) instruction prior to a ‘Fast Read Quad I/O’ (EBh) instruction. The ‘Set Burst with Wrap’ (77h)  
instruction can either enable or disable the “Wrap Around” feature for the following ‘Fast Read Quad I/O’ instruction.  
When “Wrap Around” is enabled, the data being accessed can be limited to an 8/16/32/64-byte section of a 256-byte  
page. The output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the  
8/16/32/64-byte section, the output wraps around to the beginning boundary automatically until CS is pulled high to  
terminate the instruction.  
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the  
cache afterwards within a fixed length (8/16/32/64 bytes) of data without issuing multiple read instructions. (Please  
refer to Section 7.32 Set Burst with Wrap).  
Fast Read Quad I/O in QPI mode  
When QPI mode in enabled, the number of dummy clocks is configured by the ‘Set Read Parameters’ (C0h) instruction  
to accommodate a wide range applications with different needs for either maximum Fast Read frequency or minimum  
data access latency. Depending on the state of read parameter bits P[4] and P[5], the number of dummy clocks can be  
configured as either 4, 6, or 8. The default number of dummy clocks upon power up or after a Reset (99h) instruction is  
4.  
The “Continuous Read Mode” feature is also available in QPI mode for Fast Read Quad I/O instruction. In QPI mode, the  
“Continuous Read Mode” bits M7-0 are also considered as dummy clocks. In the default setting, the data output follows  
the Continuous Read Mode bits immediately.  
The “Wrap Around” feature is not available in QPI mode for Fast Read Quad I/O instruction. To perform a read operation  
with fixed data length wrap around in QPI mode, a ‘Burst Read with Wrap’ (0Ch) instruction must be used. For more  
information, refer to Section 7.33, Burst Read with Wrap (0Ch).  
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Figure 7-20. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 Axh, QPI mode, 80 MHz)  
Figure 7-21. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 Axh, QPI mode, 133 MHz)  
7.15 Page Program (02h)  
The Page Program instruction is for programming the memory to be “0”. A Write Enable instruction must be issued  
before the device accept the Page Program Instruction (Status Register bit WEL= 1). After the Write Enable (WREN)  
instruction has been decoded, the device sets the Write Enable Latch (WEL). The instruction is entered by driving the  
CS pin low and then sending the instruction code “02h” with following a 24-bits address (A23-A0) and at least one data  
byte, into the SI pin. The CS pin must be driven low for the entire time of the instruction while data is being sent to the  
device. (Please refer to Figure 7-22 and Figure 7-23).  
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set  
to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining page length, the addressing  
wraps around to the beginning of the page. In some cases, less than 256 bytes (a partial page) can be programmed  
without having any effect on other bytes within the same page. One condition to perform a partial page program is that  
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the number of clocks cannot exceed the remaining page length. If more than 256 bytes are sent to the device the  
addressing wraps around to the beginning of the page and overwrites previously sent data.  
The CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done, the Page  
Program instruction is not executed. After CS is driven high, the self-timed ‘Page Program’ instruction commences for  
a time duration of tPP (see Table 8-7, AC Electrical Characteristics). While the page program operation is in progress, the  
‘Read Status Register’ instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1  
during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other  
instructions again. When the BUSY bit is asserted, the Write Enable Latch (WEL) bit in the Status Register is cleared to  
0.  
Figure 7-22. Page Program Instruction (SPI Mode)  
Figure 7-23. Page Program Instruction (QPI Mode)  
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7.16 Quad Page Program (33h)  
The Quad Page Program’ instruction is to program the memory as being “0” at previously erased memory areas. The ‘Quad  
Page Program’ requires four pins: I/O0, I/O1, I/O and I/O3, as address and data inputs, which can improve performance. A  
2
system using a faster clock speed does not get more benefit for the Quad Page Program as the required internal page program  
time is far more than the time data clock-in.  
To use ‘Quad Page Program’ instruction, the Quad Enable bit must be set. A Write Enable instruction must be executed  
before the device accepts the ‘Quad Page Program’ instruction (Status Register-1, WEL = 1). The instruction is initiated  
by driving the CS pin low then sending the instruction code “33h” with following a 24-bit address (A23-A0) and at least  
one data, into the I/O pins. The CS pin must be held low for the entire length of the instruction while data is being sent to  
the device. All other functions of Quad Page Program’ instruction are the same as the standard Page Program’  
instruction. (Please refer to Figure 7-24 and Figure 7-25).  
Figure 7-24. Quad Page Program Instruction (SPI mode)  
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Figure 7-25. Quad Page Program Instruction (QPI mode)  
7.17 4 Kbyte Block Erase (20h)  
The ‘Block Erase’ instruction is to erase the data of the selected block as being “1”. The instruction is used for 4K-byte  
block. Prior to the ‘Block Erase’ instruction, the ‘Write Enable’ (06h) instruction must be issued. The instruction is  
initiated by driving the CS pin low and shifting the instruction code “20h” followed a 24-bit block address (A23-A0) as  
shown in Figure 7-26 and Figure 7-27. The CS pin must go high after the eighth bit of the last byte has been latched in,  
otherwise the Block Erase instruction is not executed. After CS goes high, the self-timed ‘Block Erase’ instruction  
commences for a time duration of tSE (see Table 8-7, AC Electrical Characteristics).  
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be accessed for  
checking the status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the  
cycle is finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write  
Enable Latch (WEL) bit in the Status Register is cleared to 0.  
Figure 7-26. Block Erase Instruction (SPI Mode)  
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Figure 7-27. Block Erase Instruction (QPI Mode)  
7.18 32 Kbyte Block Erase (52h)  
The 32 KB ‘Block Erase’ instruction is used for a 32 Kbyte block erase operation. Prior to the ‘Block Erase’ Instruction,  
a ‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the  
instruction code “52h” followed a 24-bit block address (A23-A0). Refer to Figure 7-28 and Figure 7-29 below. The CS  
pin must go high after the eighth bit of the last byte has been latched in, otherwise the Block Erase instruction is not  
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE1 (see Table  
8-7, AC Electrical Characteristics).  
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read the  
status of the BUSY bit. The BUSY bit is a 1 during the block erase operation and becomes a 0 when the cycle is  
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable  
Latch (WEL) bit in the Status Register is cleared to 0.  
Figure 7-28. 32KB Block Erase Instruction (SPI Mode)  
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Figure 7-29. 32KB Block Erase Instruction (QPI Mode)  
7.19 64 Kbyte Block Erase (D8h)  
The 64 KB ‘Block Erase’ instruction is to erase a 64 Kbyte block of memory. Prior to the Block Erase Instruction, a  
‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the  
instruction code “D8h” followed a 24-bit block address (A23-A0). Refer to Figure 7-30 and Figure 7-31 below. The CS  
pin must go high after the eighth bit of the last byte has been latched in, otherwise, the Block Erase instruction is not  
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of tBE2 (see Table  
8-7, AC Electrical Characteristics).  
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read  
the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is  
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable  
Latch (WEL) bit in the Status Register is cleared to 0.  
Figure 7-30. 64KB Block Erase Instruction (SPI Mode)  
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Figure 7-31. 64KB Block Erase Instruction (QPI Mode)  
7.20 Chip Erase (C7h / 60h)  
The ‘Chip Erase’ instruction sets all bits in the memory to 1. Prior to the ‘Chip Erase’ instruction, a ‘Write Enable’ (06h)  
instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the instruction code “C7h” or  
“60h”. Refer to Figure 7-32 below. The CS pin must go high after the eighth bit of the last byte has been latched in,  
otherwise, the Chip Erase instruction is not executed. After CS is driven high, the self-timed Chip Erase instruction  
commences for a duration of tCE (see Table 8-7, AC Electrical Characteristics).  
While the chip erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be accessed to check  
the status of the BUSY bit. The BUSY bit is a 1 during the chip erase operation and becomes a 0 when the cycle is  
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable  
Latch (WEL) bit in the Status Register is cleared to 0.  
Figure 7-32. Chip Erase Instruction for SPI Mode (left) and QPI Mode (right)  
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7.21 Erase / Program Suspend (75h)  
The ‘ Erase/Program Suspend’ instruction allows the system to interrupt a Block Erase operation, or a Page  
Program, Quad Data Input Page Program, Quad Page Program operation.  
The Erase Suspend is valid only during the Block or Block erase operation. The Write Status Register-1 (01h), Write  
Status Register-2 (31h) instruction and Erase instructions (20h, 52h, D8h, C7h, 60h) are not allowed during an Erase  
Suspend operation. During the Chip Erase operation, the Erase Suspend instruction is ignored.  
Program Suspend is valid only during the Page Program, Quad Data Input Page Program or Quad Page Program  
operation. The Write Status Register-1 (01h), Write Status Register-2 (31h) instruction, Program instructions (02h and  
33h) and Erase Instructions (20h, 52h, D8h, C7h, 60h) are not allowed during Program Suspend.  
The Erase/Program Suspend instruction “75h” is accepted by the device only if the SUS bit in the Status Register equals  
to 0 and the BUSY bit equals to 1 while a Block Erase or a Page Program operation is on-going. If the SUS bit equals  
to 1 or the BUSY bit equals to 0, the Suspend instruction is ignored by the device. A maximum time of “tSUS” (see Table  
8-7, AC Electrical Characteristics) is required to suspend the erase or program operation. After Erase/Program Suspend,  
the SUS bit in the Status Register is set (0 to 1) immediately and the BUSY bit in the Status Register is cleared (1 to 0)  
within “tSUS”. For a previously resumed Erase/Program operation, it is also required that the Suspend instruction “75h” is  
not issued earlier than a minimum of time of “tSUS” following the preceding Resume instruction “7Ah”.  
Unexpected power off during the Erase/Program suspend state resets the device and release the suspend state. The  
SUS bit in the Status Register also resets to 0. The data within the page, or block that was being suspended may  
become corrupted. It is recommended for the user to implement system design techniques against the accidental  
power interruption and preserve data integrity during erase/program suspend state. (Please refer to Figure 7-33 and  
Figure 7-34).  
Figure 7-33. Erase Suspend Instruction (SPI Mode)  
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Figure 7-34. Erase Suspend Instruction (QPI Mode)  
7.22 Erase / Program Resume (7Ah)  
The Erase/Program Resume instruction “7Ah” is to restart the Block Erase operation or the Page Program operation  
upon an Erase/Program Suspend. The Resume instruction 7Ah” is accepted by the device only if the SUS bit in the  
Status Register equals to 1 and the BUSY bit equals to 0. After the instruction is issued, the SUS bit is cleared  
immediately, the BUSY bit is set within 200 ns, and the block completes the erase operation, or the page completes the  
program operation. If the SUS bit equals to 0 or the BUSY bit equals 1, the Resume instruction “7Ah” is ignored by the  
device.  
Resume instruction cannot be accepted if the previous Erase/Program Suspend operation was interrupted by  
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be issued within a  
minimum of time of “tSUS” following a previous Resume instruction. Refer to Figure 7-35 and Figure 7-36 below.  
Figure 7-35. Erase / Program Resume Instruction (SPI Mode)  
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Figure 7-36. Erase / Program Resume Instruction (QPI Mode)  
7.23 Deep Power Down (B9h)  
Executing the Deep Power Down instruction is the best way to put the device in the lowest power consumption. The  
Deep Power Down instruction reduces the standby current (from ICC1 to ICC2, as specified in Table 8-7, AC Electrical  
Characteristics). The instruction is entered by driving the CS pin low with following the instruction code “B9h”. Refer to  
Figure 7-37 and Figure 7-38 below.  
The CS pin must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in);  
otherwise, the Deep Power Down instruction is not executed. After CS goes high, it requires a delay of tDP and the Deep  
Power Down mode is entered. While in the Deep Power Down state, the ‘Release Deep Power Down / Device ID’ (ABh)  
instruction, which restores the device to normal operation, will be recognized. All other instructions are ignored, including  
the ‘Read Status Register’ (05h) instruction, which is always available during normal operation.  
Figure 7-37. Deep Power Down Instruction (SPI Mode)  
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Figure 7-38. Deep Power Down Instruction (QPI Mode)  
7.24 Release Deep Power Down / Device ID (ABh)  
The Release Deep Power Down / Device ID’ instruction is a multi-purpose instruction. It can be used to release the  
device from the Deep Power Down state and also obtain the device identification (ID).  
The instruction is issued by driving the CS pin low, sending the instruction code “ABh” and driving CS high as shown in  
Figure 7-39 and Figure 7-40. The ‘Release from Deep Power Down’ instruction requires the time duration of tRES1 (see  
Table 8-7, AC Electrical Characteristics). The CS pin must keep high during the tRES1 time duration.  
The Device ID can be read during SPI mode only. In other words, Device ID feature is not available in QPI mode for Release  
Deep Power Down/Device ID instruction. To obtain the Device ID in SPI mode, the instruction is initiated by driving the CS  
pin low and sending the instruction code “ABh” with following 3-dummy bytes. The Device ID bits are then shifted on  
the falling edge of SCK with most significant bit (MSB) first as shown in Figure 7-41. After CS is driven high it must  
keep high for a time duration of tRES2 (See Table 8-7, AC Electrical Characteristics). The Device ID can be read  
continuously. The instruction is completed by driving CS high.  
If the ‘Release from Deep Power Down /Device ID’ instruction is issued while an Erase, Program or Write cycle is in process  
(when BUSY equals 1) the instruction is ignored and does not have any effects on the current cycle.  
Figure 7-39. Release Power Down Instruction (SPI Mode)  
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Figure 7-40. Release Power Down Instruction (QPI Mode)  
Figure 7-41. Release Power Down / Device ID Instruction (SPI Mode)  
7.25 Read Manufacturer / Device ID Dual I/O (90h)  
The ‘Read Manufacturer/ Device ID Dual I/O’ instruction provides both the JEDEC assigned manufacturer ID and the  
specific device ID.  
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Dual I/O instruction. The instruction is  
initiated by driving the CS pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of  
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (16h) are shifted out on the falling edge of  
SCK with most significant bit (MSB) first as shown in Figure 7-42 and Figure 7-43. If the 24-bit address is initially set to  
000001h, the Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be  
read continuously, alternating from one to the other. The instruction is completed by driving CS high.  
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Figure 7-42. Read Manufacturer/ Device ID Instruction (SPI Mode)  
Figure 7-43. Read Manufacturer/ Device ID Instruction (QPI Mode)  
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7.26 Read Manufacturer / Device ID Dual I/O (92h)  
The Read Manufacturer/ Device ID Dual I/O instruction provides both the JEDEC assigned manufacturer ID and the  
specific device ID.  
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Dual I/O instruction. The instruction is  
initiated by driving the CS pin low and shifting the instruction code “92h” followed by a 24-bit address (A23-A0) of  
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (17h) are shifted out on the falling edge of  
SCK with most significant bit (MSB) first as shown in Figure 7-44. If the 24-bit address is initially set to 000001h the  
Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read  
continuously, alternating from one to the other. The instruction is completed by driving CS high.  
Figure 7-44. Read Dual Manufacturer/ Device ID Dual I/O Instruction (SPI Mode)  
7.27 Read Manufacturer / Device ID Quad I/O (94h)  
The Read Manufacturer/ Device ID Quad I/O instruction provides both the JEDEC assigned manufacturer ID and the  
specific device ID.  
The Read Manufacturer/ Device ID instruction is very similar to the Fast Read Quad I/O instruction. The instruction is  
initiated by driving the CS pin low and shifting the instruction code “94h” followed by a 24-bit address (A23-A0) of  
000000h. After which, the Manufacturer ID for Adesto (1Fh) and the Device ID (17h) are shifted out on the falling edge of  
SCK with most significant bit (MSB) first as shown in Figure 7-45. If the 24-bit address is initially set to 000001h the  
Device ID is read first and then followed by the Manufacturer ID. The Manufacturer and Device ID can be read  
continuously, alternating from one to the other. The instruction is completed by driving CS high.  
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Figure 7-45. Read Quad Manufacturer/ Device ID Quad I/O instruction (SPI Mode)  
7.28 JEDEC ID (9Fh)  
For compatibility reasons, the AT25QL641 provides several instructions to electronically determine the identity of the  
device. The Read JEDEC ID instruction is compliant with the JEDEC standard for SPI compatible serial Flash memories  
that was adopted in 2003. The instruction is entered by driving the CS pin low with following the instruction code “9Fh”.  
JEDEC assigned Manufacturer ID byte for Adesto (1Fh) and two Device ID bytes, Memory Type (ID15-ID8) and  
Capacity (ID7-ID0) are then shifted out on the falling edge of SCK with most significant bit (MSB) first shown in Figure  
7-46 and Figure 7-47. For memory type and capacity values refer to Manufacturer and Device Identification table. The  
JEDEC ID can be read continuously. The instruction is terminated by driving CS high.  
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Figure 7-46. Read JEDEC ID Instruction (SPI Mode)  
Figure 7-47. Read JEDEC ID Instruction (QPI Mode)  
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7.29 Enable QPI (38h)  
The AT25QL641 supports both the Standard/Dual/Quad Serial Peripheral interface (SPI) and the Quad Peripheral  
Interface (QPI) modes. However, SPI mode and QPI mode cannot be used at the same time. Enable QPI instruction is  
the only way to switch the device from SPI mode to QPI mode.  
In order to switch the device to QPI mode, the Quad Enable (QE) bit in Status Register 2 must be set to 1 first, and an  
Enable QPI instruction must be issued. If the Quad Enable (QE) bit is 0, the Enable QPI instruction is ignored and the  
device remains in SPI mode.  
After power-up, the default state of the device is SPI mode. See the instruction set Table 7-2 for all the commands  
supported in SPI mode and the instruction Set Table 7-5 for all the instructions supported in QPI mode.  
When the device is switched from SPI mode to QPI mode, the existing write enable and program/erase suspend status,  
and the wrap length setting remains unchanged.  
Figure 7-48. Enable QPI Instruction (SPI Mode only)  
7.30 Disable QPI (FFh)  
By issuing Disable QPI (FFh) instruction, the device is reset SPI mode. When the device is switched from QPI mode to  
SPI mode, the existing Write Enable Latch (WEL) and Program/Erase Suspend status, and the Wrap Length setting  
remains unchanged.  
Figure 7-49. Disable QPI Instruction for QPI Mode  
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7.31 Word Read Quad I/O (E7h)  
The Quad I/O dramatically reduces instruction overhead allowing faster random access for code execution (XiP) directly  
from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to enable the Word Read Quad I/O  
instruction. The lowest Address bit (A0) must equal 0 and only two dummy clocks are required prior to the data output.  
Continuous Read Mode  
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the “Continuous Read  
Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 7-50. The upper nibble of the (M7-4)  
controls the length of the next Word Read Quad I/O’ instruction through the inclusion or exclusion of the first byte  
instruction code. The lower nibble bits of the (M[3:0]) are don’t care (“X”). However, the I/O pins should be high-  
impedance prior to the falling edge of the first data out clock.  
If the continuous read mode bits M[7-4] = Ah, then the next ‘Fast Read Quad I/O’ instruction (after CS is raised and then  
lowered) does not require the E7h instruction code, as shown in Figure 7-51. This reduces the instruction sequence by  
eight clocks and allows the Read address to be immediately entered after CS is asserted low. If the continuous read  
mode bits M[7:4] do not equal to Ah (1010), the next instruction (after CS is raised and then lowered) requires the first  
byte instruction code, thus returning to normal operation.  
Figure 7-50. Word Read Quad I/O Instruction (Initial instruction or previous set M7-0 ≠ Axh, SPI Mode)  
Figure 7-51. Word Read Quad I/O Instruction (Previous instruction set M7-0 = Axh, SPI Mode)  
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Wrap Around in SPI mode  
The ‘Word Read Quad I/O’ instruction can also be used to access a specific portion within a page by issuing a ‘Set  
Burst with Wrap’ (77h) instruction prior to E7h. The ‘Set Burst with Wrap’ (77h) instruction can either enable or disable  
the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is enabled, the output data starts at  
the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64-byte section,  
the output wraps around to the beginning boundary automatically until CS is pulled high to terminate the instruction.  
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache  
afterwards within a fixed length (8/16/32/64-byte) of data without issuing read instructions.  
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable  
the “Wrap Around” operation while W6-5 is used to specify the length of the wrap around section within a page.  
7.32 Set Burst with Wrap (77h)  
The Set Burst with Wrap’ (77h) instruction is used in conjunction with ‘Fast Read Quad I/O’ and ‘Word Read Quad  
I/O’ instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page. Certain applications can  
benefit from this feature and improve the overall system code execution performance. Before the device can accept the  
‘Set Burst with Wrap’ instruction, the QE bit in the Status register bit must be set.  
The Set Burst with Wrap’ instruction is initiated by driving the CS pin low and then shifting the instruction code  
“77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The instruction sequence is shown in ‘Set Burst with Wrap’  
instruction sequence. Wrap bits W7 and W3-0 are not used.  
Table 7-6. Encoding of the W6 - W4 Wrap Bits  
W4 = 0  
W4 = 1 (Default)  
W6, W5  
Wrap Around  
Wrap Length  
8-byte  
Wrap Around  
Wrap Length  
N/A  
0 0  
0 1  
1 0  
1 1  
Yes  
Yes  
Yes  
Yes  
No  
No  
No  
No  
16-byte  
N/A  
32-byte  
N/A  
64-byte  
N/A  
Once W6-4 are set by a ‘Set Burst with Wrap’ instruction  
instructions use the W6-4 setting to access the corresponding 8/16/32/64  
To exit the “Wrap Around” function and return to normal read operation, another ‘Set Burst with Wrap’ instruction should be  
issued to set W4 = 1 The default value of W4 upon power on is 1 In the case of a system reset while W4 = 0 it is  
recommended that the controller issues a ‘Set Burst with Wrap’ instruction or Reset (99h) instruction to reset W4 = 1 prior to  
any normal Read instructions since the AT25QL641 does not have an external hardware reset pin  
,
all the following “Fast Read Quad I/O” and ‘Word Read Quad I/O’  
-
byte section within any page.  
.
.
,
.
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Figure 7-52. Set Burst with Wrap Instruction Sequence  
7.33 Burst Read with Wrap (0Ch)  
The ‘Burst Read with Wrap’ (0Ch) instruction provides an alternative way to perform the read operation with wrap around  
in QPI mode. The instruction is similar to the ‘Fast Rea’ (0Bh) instruction in QPI mode, except the addressing of the  
read operation wraps around to the beginning boundary of the wrap length once the ending boundary is reached.  
The “Wrap Length” and the number of dummy of clocks can be configured by the ‘Set Read Parameters’ (C0h)  
instruction.  
Figure 7-53. Burst Read with Wrap instruction (QPI Mode, 80MHz)  
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Figure 7-54. Burst Read with Wrap instruction (QPI Mode, 133 MHz)  
7.34 Set Read Parameters (C0h)  
In QPI mode, to accommodate a wide range of applications with different needs for either maximum read frequency or  
minimum data access latency, the Set Read Parameters’ (C0h) instruction can be used to configure the number of  
dummy clocks for ‘Fast Read’ (0Bh), ‘Fast Read Quad I/O’ (EBh) and ‘Burst Read with Wrap’ (0Ch) instructions, and  
to configure the number of bytes of “Wrap Length” for the ‘Burst Read with Wrap’ (0Ch) instruction.  
In Standard SPI mode, the ‘Set Read Parameters’ (C0h) instruction is not accepted. The dummy clocks for various ‘Fast  
Read’ instructions in Standard/Dual/Quad SPI mode are fixed, please refer to the instruction. The “Wrap Length” is set  
by W6-5 bit in the “Set Burst with Wrap (77h)” instruction. This setting remains unchanged when the device is switched  
from Standard SPI mode to QPI mode.  
The default “Wrap Length” after a power up or a ‘Reset’ instruction is 8 bytes, the default number of dummy clocks is 4.  
When the Set Read Parameters instruction is executed, an 8-bit value (P7-P0) is transferred to the memory. Within this 8-bit  
value, bits P5-P4 are used to set the number of dummy clocks and the maximum read frequency as shown in Table 7-7. The  
P1-P0 bits are used to set the wrap length as shown in Table 7-8. All other bits are unused.  
Table 7-7. Encoding of P[5:4] Bits  
Dummy  
Clocks  
Maximum  
Read Frequency  
P5, P4  
00  
01  
10  
11  
4
4
6
8
80 MHz  
80 MHz  
104 MHz  
133 MHz  
Table 7-8. Encoding of P[1:0] Bits  
P1, P0  
Wrap Length  
0 0  
0 1  
1 0  
1 1  
8-byte  
16-byte  
32-byte  
64-byte  
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Figure 7-55. Set Read Parameters Instruction (QPI Mode)  
7.35 Enable Reset (66h) and Reset (99h)  
For eight-pin packages, the AT25QL641 provide a software Reset instruction instead of a dedicated RESET pin.  
Once the Reset instruction is accepted, any ongoing internal operations are terminated and the device returns to its  
default power-on state and loses all the current volatile settings, such as Volatile Status Register bits, Write Enable  
Latch (WEL) status, Program/Erase Suspend status, Continuous Read Mode bit setting, Read parameter setting and  
Wrap bit setting.  
The ‘Enable Reset’ (66h) and ‘Reset’ (99h) instructions can be issued in either SPI mode or QPI mode. To avoid  
accidental reset, both instructions must be issued in sequence. Any other instructions other than ‘Reset’ (99h) that  
occur after the ‘Enable’ (66h) instruction disables the reset enable state. As such, a new sequence of ‘Enable Reset’  
(66h) and ‘Reset’ (99h) is needed to reset the device. Once the Reset instruction is accepted by the device takes  
approximately tRST = 30 µs to reset. During this period, no instructions are accepted.  
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset  
instruction sequence is accepted by device. It is recommended to check the BUSY bit and the SUS bit in Status Register  
before issuing the Reset instruction sequence.  
Figure 7-56. Enable Reset and Reset Instruction (SPI Mode)  
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Figure 7-57. Enable Reset and Reset Instruction (QPI Mode)  
7.36 Read Serial Flash Discovery Parameter (5Ah)  
The Read Serial Flash Discovery Parameter (SFDP) instruction allows reading the Serial Flash Discovery Parameter  
area (SFDP). This SFDP area is composed of 2048 read-only bytes containing operating characteristics and vendor  
specific information. The SFDP area is factory programmed. If the SFDP area is blank, the device is shipped with all the  
SFDP bytes at FFh. If only a portion of the SFDP area is written to, the portion not used is shipped with bytes in the  
erased state (FFh).  
The instruction sequence for the read SFDP has the same structure as that of a ‘Fast Read’ instruction. First, the device  
is selected by driving Chip Select (CS) low. Next, the 8-bit instruction code (5Ah) and the 24-bit address are shifted in,  
followed by 8 dummy clock cycles. The bytes of SFDP content are shifted out on the Serial Data Output (SO) starting  
from the specified address. Each bit is shifted out during the falling edge of Serial Clock (SCK). The instruction sequence  
is shown here. The ‘Read SFDP’ instruction is terminated by driving Chip Select (CS) high at any time during data  
output.  
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Figure 7-58. Read SFDP Register Instruction  
Table 7-9. SFDP Signature and Headers  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
00h  
01h  
02h  
03h  
04h  
05h  
07:00  
15:08  
23:16  
31:24  
07:00  
15:08  
0101 0011  
0100 0110  
0100 0100  
0101 0110  
0000 0110  
0000 0001  
53h  
46h  
44h  
50h  
06h  
01h  
SFDP Signature  
Start from 00h  
Start from 01h  
SFDP Minor Revision  
SFDP Major Revision  
Number of Parameters  
Headers  
Start from 00h  
FFh  
06h  
23:16  
0000 0001  
01h  
Reserved  
07h  
08h  
31:24  
07:00  
1111 1111  
FFh  
00h  
JEDEC Parameter ID  
(LSB) = 00H  
0000 0000  
JEDEC Parameter ID (LSB)  
Parameter Table Minor  
Revision  
Start from 00  
h
09h  
15:08  
0000 0110  
06h  
Parameter Table Major  
Revision  
Start from 01h  
0Ah  
0Bh  
23:16  
31:24  
0000 0001  
0001 0000  
01h  
10h  
Parameter Table Length  
(double words)  
How many DWORDs in  
the parameter table  
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Table 7-9. SFDP Signature and Headers (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
0Ch  
0Dh  
0Eh  
07:00  
15:08  
23:16  
0011 0000  
0000 0000  
0000 0000  
30h  
00h  
00h  
Address of Adesto  
Parameter Table  
Parameter Table Pointer  
JEDEC Parameter ID  
JEDEC Parameter ID (MSB)  
JEDEC Parameter ID (LSB)  
0Fh  
10h  
11h  
31:24  
07:00  
15:08  
1111 1111  
0001 1111  
0000 0000  
FFh  
1Fh  
00h  
(MSB)  
:FFH  
Adesto Manufacturer ID  
Start from 00h  
Parameter Table Minor  
Revision  
Parameter Table Major  
Revision  
Start from 01h  
12h  
13h  
23:16  
31:24  
0000 0001  
0000 0010  
01h  
02h  
Parameter Table Length  
(double words)  
How many DWORDs in  
the parameter table  
14h  
15h  
16h  
17h  
07:00  
15:08  
23:16  
31:24  
1000 0000  
0000 0000  
0000 0000  
0000 0001  
80h  
00h  
00h  
01h  
Parameter Table Pointer  
(PTP)  
Address of Adesto  
Parameter Table  
Reserved  
FFh  
Table 7-10. SFDP Parameters Table 1  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
01: 4 KB available  
11: 4 KB not available  
Erase Granularity  
01:00  
01  
0: 1 byte  
1: 64 bytes or larger  
Write Granularity  
02  
03  
04  
1
0
0
Volatile Status Register Block  
Protect Bits  
0: Nonvolatile status bit  
1: Volatile status bit  
30h  
E5h  
Volatile Status Register Write  
Enable Opcode  
0: 50h Opcode to enable,  
if bit-3 = 1  
Reserved  
07:05  
15:08  
111  
4KB Erase Opccde  
Opcode or FFh  
31h  
0010 0000  
20h  
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Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
Fast Dual Read Output  
(1 -1 -2)  
0: Not supported  
1: Supported  
16  
1
00: 3 bytes only  
01: 3 or 4 bytes  
10: 4 bytes only  
11: Reserved  
Number of Address Bytes  
18:17  
00  
0: Not supported  
1: Supported  
Double Transfer Rate (DTR)  
Clocking  
19  
20  
21  
22  
0
1
1
1
32h  
F1h  
Fast Dual I/O Read  
(1-2- 2)  
0: Not supported  
1: Supported  
Fast Quad I/O Read  
(1-4-4)  
0: Not supported  
1: Supported  
Fast Quad Output Read  
(1-1-4)  
0: Not supported  
1: Supported  
Reserved  
Reserved  
FFh  
FFh  
23  
1
33h  
34h  
35h  
36h  
37h  
31:24  
07:00  
15:08  
23:16  
31:24  
1111 1111  
1111 1111  
1111 1111  
1111 1111  
0000 0011  
FFh  
FFh  
FFh  
FFh  
03h  
Flash Memory Density  
Fast Quad I/O (1-4-4)  
Number of dummy clocks  
04:00  
07:05  
15:08  
20:16  
23:21  
31:24  
04:00  
07:05  
15:08  
00100  
010  
Number of dummy clocks  
Number of mode bits  
Opcode or FFh  
38h  
39h  
3Ah  
3Bh  
3Ch  
3Dh  
44h  
EBh  
08h  
6Bh  
08h  
3Bh  
Fast Quad I/O (1-4-4)  
Number of mode bits  
Fast Quad I/O (1-4-4) Read  
Opcode  
1110 1011  
01000  
Fast Quad Output (1-1-4)  
Number of dummy clocks  
Number of dummy clocks  
Number of mode bits  
Opcode or FFh  
Fast Quad Output (1-1-4)  
Number of mode bits  
000  
Fast Quad Output (1-1-4)  
Read Opcode  
0110 1011  
01000  
Fast Dual Output (1-1-2)  
Number of dummy clocks  
Number of dummy clocks  
Number of mode bits  
Opcode or FFh  
Fast Dual Output (1-1-2)  
Number of mode bits  
000  
Fast Dual Output (1-1-2)  
Read Opcode  
0011 1011  
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Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
Fast Dual I/O (1-2-2)  
Number of dummy clocks  
20:16  
23:21  
31:24  
00000  
100  
Number of dummy clocks  
3Eh  
3Fh  
80h  
Fast Dual I/O (1-2-2)  
Number of mode bits  
Number of mode bits  
Opcode or FFh  
Fast Dual I/O (1-2-2) Read  
Opcode  
1011 1011  
BBh  
0: Not supported  
1: Supported  
Fast Dual DPI (2-2-2)  
Reserved  
0
0
111  
1
FFh  
03:01  
04  
40h  
FEh  
0: Not supported  
1: Supported  
Fast Quad QPI (4-4-4)  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
FFh  
FFh  
FFh  
FFh  
FFh  
FFh  
07:05  
15:08  
23:16  
31:24  
07:00  
15:08  
111  
41h  
42h  
43h  
44h  
45h  
1111 1111  
1111 1111  
1111 1111  
1111 1111  
1111 1111  
FFh  
FFh  
FFh  
FFh  
FFh  
Fast Dual DPI (2-2-2)  
Number of dummy clocks  
20:16  
23:21  
31:24  
0 0000  
000  
Number of dummy clocks  
Number of mode bits  
Opcode or FFh  
46h  
00h  
Fast Dual DPI (2-2-2)  
Number of mode bits  
Fast Dual DPI(2-2-2) Read  
Opcode  
47h  
1111 1111  
FFh  
Reserved  
Reserved  
FFh  
FFh  
48h  
49h  
07:00  
15:08  
1111 1111  
1111 1111  
FFh  
FFh  
Fast Quad QPI (4-4-4)  
Number of dummy clocks  
20:16  
23:21  
31:24  
00010  
010  
Number of dummy clocks  
Number of mode bits  
Opcode or FFh  
4Ah  
4Bh  
42h  
Fast Quadl QPI (4-4-4)  
Number of mode bits  
Fast Quad QPI (4-4-4) Read  
Opcode  
1110 1011  
EBh  
4 KB = 2^0Ch, 32 KB = 2^0Fh,  
64 KB = 2^10h; (2^Nbyte)  
Erase type-1 Size  
Erase type-1 Opcode  
Erase type-2 Size  
Erase type-2 Opcode  
4Ch  
4Dh  
4Eh  
4Fh  
07:00  
15:08  
23:16  
31:24  
0000 1100  
0010 0000  
0000 1111  
0101 0010  
0Ch  
20h  
0Fh  
52h  
Opcode or FFh  
4 KB = 2^0Ch, 32 KB = 2^0Fh,  
64 KB = 2^10h; (2^Nbyte)  
Opcode or FFh  
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Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
4 KB = 2^0Ch, 32 KB = 2^0Fh,  
64 KB = 2^10h; (2^Nbyte)  
07:00  
Erase Type-3 Size  
50h  
0001 0000  
10h  
Opcode or FFh  
Erase Type-3 Opcode  
Erase Type-4 Size  
51h  
52h  
53h  
15:08  
23:16  
31:24  
1101 1000  
0000 0000  
1111 1111  
D8h  
00h  
FFh  
4 KB = 2^0Ch, 32 KB = 2^0Fh,  
64 KB = 2^10h; (2^Nbyte)  
Opcode or FFh  
Erase Type-4 Opcode  
Erase Maximum/Typical  
Ratio  
Maximum = 2 * (COUNT + 1) *  
Typical  
03:00  
08:04  
0011  
Erase type-1 Typical time  
Erase type-1 Typical units  
Erase type-2 Typical time  
Erase type-2 Typical units  
Erase type-3 Typical time  
Erase type-3 Typical units  
Erase type-4 Typical time  
Erase type-4 Typical units  
Count or 00h  
0 0011  
00b: 1 ms  
01b: 16 ms  
10b: 128 ms  
11b: 1 sec  
10:09  
15:11  
17:16  
22:18  
24:23  
29:25  
31:30  
01  
0110 0  
01  
Count or 00h  
00b: 1 ms  
01b: 16 ms  
10b: 128 ms  
11b: 1 sec  
54h  
55h  
56h  
57h  
33h  
62h  
D5h  
00h  
Count or 00h  
101 01  
01  
00b: 1 ms  
01b: 16 ms  
10b: 128 ms  
11b: 1 sec  
Count or 00h  
00 000  
00  
00b: 1 ms  
01b: 16 ms  
10b: 128 ms  
11b: 1 sec  
Program Maximum/Typical  
Ratio  
Maximum = 2 * (COUNT + 1) *  
Typical  
03:00  
07:04  
0100  
1000  
58h  
84h  
Page Size  
2^N bytes  
AT25QL641  
DS-25QL641–130E–10/2018  
57  
Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
Program Page Typical time  
Count or 00h  
12:08  
13  
0 1001  
1
0: 8  
µs,  
Program Page Typical units  
1: 64  
µs  
Program Byte Typical time,  
1st byte  
Count or 00h  
17:14  
18  
01 00  
0
Program Byte Typical units,  
1st byte  
0: 1  
1: 8  
µs,  
µs  
59h  
5Ah  
5Bh  
Program Additional Byte  
Typical time  
29h  
01h  
C7h  
Count or 00h  
22:19  
000 0  
Program Additional Byte  
Typical units  
0: 1  
1: 8  
µs,  
23  
0
µs  
Erase Chip Typical time  
Erase Chip Typical units  
Reserved  
Count or 00h  
28:24  
0 0111  
00b: 16 ms  
01b: 256 ms  
10b: 4 sec  
30:29  
31  
10  
1
11b: 64 sec  
1h  
Prohibited Op during  
Program Suspend  
see Datasheet  
see Datasheet  
03:00  
07:04  
11010  
1110  
5Ch  
ECh  
Prohibited Op during Erase  
Suspend  
AT25QL641  
DS-25QL641–130E–10/2018  
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Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Reserved  
Comment  
1h  
08  
1
Program Resume to  
Suspend time  
Count of 64us  
12:09  
0 000  
Program Suspend Maximum  
time  
Count or 00h  
00b: 128 ns,  
17:13  
19:18  
11 101  
01  
Program Suspend Maximum  
units  
01b: 1  
10b: 8  
µ
µ
s,  
s,  
11b: 64  
µs  
5Dh  
5Eh  
5Fh  
A1h  
07h  
3Dh  
Erase Resume to Suspend  
time  
Count of 64  
µ
s
23:20  
28:24  
0000  
Erase Suspend Maximum  
time  
Count or 00h  
00b: 128 ns,  
1 1101  
Erase Suspend Maximum  
units  
01b: 1  
10b: 8  
11b: 64 µs  
µ
µ
s,  
s,  
30:29  
31  
01  
0
0: Program and Erase suspend  
supported  
Suspend / Resume  
supported  
1: not supported  
Program Resume Opcode  
Program Suspend Opcode  
Resume Opcode  
Opcode or FFh  
Opcode or FFh  
Opcode or FFh  
Opcode or FFh  
11b  
60h  
61h  
62h  
63h  
7:0  
0111 1010  
0111 0101  
0111 1010  
0111 0101  
11  
7Ah  
75h  
7Ah  
75h  
15:8  
23:16  
31:24  
01:00  
Suspend Opcode  
Reserved  
xxxxx1b: Opcode = 05h, bit-0 =  
1 Busy,  
64h  
F7h  
Status Register Busy Polling  
xxxx1xb: Opcode = 70h, bit-7 =  
0 Busy,  
07:02  
1111 01  
Others: reserved  
Count or 00h  
00b: 128 ns,  
Exit Deep Powerdown time  
Exit Deep Powerdown units  
12:08  
14:13  
0 0010  
01  
01b: 1  
10b: 8  
µ
µ
s,  
s,  
11b: 64 µs  
65h  
66h  
67h  
A2h  
D5h  
5Ch  
Exit Deep Powerdown  
Opcode  
Opcode or FFh  
Opcode or FFh  
22:15  
30:23  
31  
101 0101 1  
101 1100 1  
0
Enter Deep Powerdown  
Opcode  
0: Deep Powerdown supported  
1: Not supported  
Deep Powerdown Supported  
AT25QL641  
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59  
Table 7-10. SFDP Parameters Table 1 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
Disable 4-4-4 Read Mode  
Enable 4-4-4 Read Mode  
03:00  
08:04  
1001  
0 0001  
Fast Quad I/O Continuous  
(0-4-4) supported  
0: not supported,  
1: Quad I/O 0-4-4 supported  
09  
1
Fast Quad I/O Continuous  
(0-4-4) Exit  
15:10  
19:16  
22:20  
1111 01  
1100  
001  
68h  
69h  
6Ah  
19h  
F6h  
1Ch  
Fast Quad I/O Continuous  
(0-4-4) Enter  
Quad Enable Requirements  
(QER)  
0: not supported,  
1: use Configuration Register  
bit-4  
HOLD or RESET Disable  
23  
0
Reserved  
FFh  
6Bh  
6Ch  
31:24  
06:00  
07  
1111 1111  
110 1000  
1
FFh  
E8h  
Status Register Opcode  
Reserved  
1h  
Soft Reset Opcodes  
4-Byte Address Exit  
4-Byte Address Enter  
6Dh  
6Eh  
6Fh  
13:08  
23:14  
31:24  
01 0000  
10h  
C0h  
1100 0000 00  
1000 0000  
80h  
Table 7-11. SFDP Parameters Table 2  
Description  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Comment  
1650h: 1.65V,  
1700h: 1.70V,  
2300h: 2.30V,  
2500h: 2.50V,  
2700h: 2.70V  
80h  
81h  
0000 0000  
0001 0111  
00h  
17h  
VCC Minimum Voltage  
VCC Maximum Voltage  
15:0  
1950h: 1.95V,  
3600h: 3.60V,  
4000h: 4.00V,  
4400h: 4.40V  
82h  
83h  
0000 0000  
0010 0000  
00h  
20h  
31:16  
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Table 7-11. SFDP Parameters Table 2 (Continued)  
Address  
(h) Byte  
Address  
(Bit)  
Data (b)  
(Bit)  
Data (h)  
(Byte)  
Description  
Comment  
10b: Use non-volatile  
status register  
Array Protection Method  
01:00  
02  
00  
0
0: Power up unprotected  
1: Power up protected  
Power up Protection default  
Protection Disable Opcodes  
Protection Enable Opcodes  
011b: Use status register  
011b: Use status register  
011b: Use status register  
05:03  
08:06  
11:09  
00 0  
0 00  
000  
84h  
85h  
00h  
00h  
Protection Read Opcodes  
00b: Not supported  
01b: Opcodes  
3Dh, 2Ah, 7Fh, FCh  
Protection Register Erase  
Opcode  
13:12  
15:14  
00  
00  
00b: Not supported  
01b: Opcodes  
3Dh, 2Ah, 7Fh, FCh  
Protection Register Program  
Opcode  
Reserved  
Reserved  
Reserved  
FFh  
FFh  
FFh  
86h  
87h  
23:16  
31:24  
1111 1111  
1111 1111  
FFh  
FFh  
88h - FFh  
Reserved  
7.37 Enter Secured OTP (B1h)  
The ‘Enter Secured OTP’ instruction is for entering the additional 4 Kbit secured OTP mode. This additional mode is  
independent from the main array, which may be used to store unique serial number for system identifier. After entering  
the Secured OTP mode, the standard read or program procedure can be used to read or write data. The Secured OTP  
data cannot be updated again once it is locked down.  
Please note that ‘Write Status Register-1’, ‘Write Status Register-2’ and ‘Write Security Register’ instructions are not  
acceptable during the access of secure OTP region. Once security OTP is locked down, only commands related with  
read are valid. The ‘Enter Secured OTP’ instruction sequence is shown in Figure 7-59.  
Figure 7-59. Enter Secured OTP Instruction for SPI Mode (left) and QPI Mode (right)  
AT25QL641  
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61  
7.38 Exit Secured OTP (C1h)  
The Exit Secured OTP instruction is for exiting the additional 4 Kbit secured OTP mode. (Please refer to Figure 7-60).  
Figure 7-60. Exit Secured OTP instruction for SPI Mode (left) and QPI Mode (right)  
7.39 Read Security Register (2Bh)  
The Read Security Register can be read the value of Security Register bits at any time (even in program/erase/write  
status register-1 and write status register-2 condition) and continuously. Bits 0 and 1 of this register are described below.  
All other bits of the register are reserved.  
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before or not. When it is  
“0”, it indicates a non-factory lock, a “1” indicates a factory lock.  
Lock-down Secured OTP (LDSO) bit. By executing the ‘Write Security Register’ instruction, the LDSO bit may be set to  
“1” for customer lock down purposes. However, once the bit it set to “1” (locked down), the LDSO bit and the 4 Kbit  
Secured OTP area cannot be updated any more. While it is in 4 Kbit Secured OTP mode, array access is not allowed to  
write.  
Table 7-12. Security Register Definition  
Bit 7  
Bit 6  
Bit 5  
Bit 4  
Bit 3  
Bit 2  
Bit 1  
Bit 0  
LDSO (indicate if  
lock- down)  
Secured OTP  
indicator bit  
x
x
x
x
x
x
0 = not  
0 = non factory  
lock  
lock-down  
Reserved Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
1 = lock- down  
(cannot program/  
erase OTP)  
1 = factory lock  
Volatil  
e bit  
Volatile  
bit  
Volatile  
bit  
Volatile  
bit  
Volatile  
bit  
Volatile  
bit  
Non  
-
Volatile bit  
Non  
-
Volatile  
bit  
AT25QL641  
DS-25QL641–130E–10/2018  
62  
Figure 7-61. Read Security Register instruction (SPI Mode)  
Figure 7-62. Read Security Register Instruction (QPI Mode)  
7.40 Write Security Register (2Fh)  
The ‘Write Security Register’ instruction is for change the state of the bits in the Security Register. Unlike the ‘Write  
Status Register’ instruction, the ‘Write Enable’ instruction is not required before executing the ‘Write Security Register’  
instruction. The instruction may change the value of bit 1 (LDSO bit) for a customer to lock down the 4 Kbit Secured  
OTP area. Once the LDSO bit is set to “1”, the Secured OTP area cannot be updated any more.  
The CS must go high exactly at the boundary; otherwise, the instruction is not executed.  
AT25QL641  
DS-25QL641–130E–10/2018  
63  
Figure 7-63. Write Security Register Instruction for SPI Mode (left) and QPI Mode (right)  
7.41 4 Kbit Secured OTP  
The AT25QL641 provides a 4 Kbit one-time-program area for setting a unique serial number which can be set by  
either the factory or the customer. Security register bit 0 indicates whether the chip is locked by factory or not.  
The 4 Kbit OTP space is accessed using the B1h instruction as described above. After the OTP value has been  
programmed, the C1h instruction is used to exit from the secured OTP space.  
The secure OTP space is divided into a 128-bit electronic serial number, and 3968 bits is user-defined data as shown in  
Table 7-13.  
Note. Once the OTP space is locked down, either by the factory or the customer, it cannot be changed any more.  
While in 4 Kbit secured OTP mode, array access is not allowed to write.  
Table 7-13. Secure OTP Address Space  
Standard  
Address Range  
000000 ~ 00000F  
000010 ~ 0001FF  
Size  
Customer Lock  
ESN  
128-bit  
3968-bit  
(Electrical Serial Number)  
Determined by customer  
N/A  
AT25QL641  
DS-25QL641–130E–10/2018  
64  
8.  
ElectricalCharacteristics  
Table 8-1. Absolute Maximum Ratings (1)  
Parameter  
Supply Voltage  
Symbol  
VCC  
Conditions  
Value  
Units  
-0.6 to VCC+0.4  
-0.6 to VCC +0.4  
V
V
V
Voltage Applied to any pin  
V
IO  
Relative to Ground  
Transient Voltage on any pin  
<20nS Transient Relative  
to Ground  
V
IOT  
-1.0V to VCC +1.0V  
Storage temperature  
Lead temperature  
T
STG  
-65 to +150  
See Note (2)  
˚C  
˚C  
V
TLEAD  
Electrostatic discharge  
voltage  
V
ESD  
Human Body Model (3)  
-2000 to +2000  
1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The “Absolute  
Maximum Ratings” are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated  
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods  
may affect device reliability. Voltage extremes referenced in the “Absolute Maximum Ratings” are intended to accommodate short  
duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended  
period of time.  
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on  
restrictions on hazardous substances (RoHS) 2002/95/EU.  
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500, R2 = 500).  
Table 8-2. Operating Ranges  
Parameter  
Symbols  
Conditions  
Min  
Max  
Units  
fR = 133 MHz (Single/Dual/Quad SPI)  
fR = 50 MHz (Read Data 03h)  
Supply Voltage  
VCC  
1.7  
2.0  
V
Ambient Operating  
Temperature  
TA  
Industrial  
-40  
+85  
oC  
Table 8-3. Endurance and Data Retention  
Parameter  
Conditions  
Min  
100,000  
Max  
Units  
Cycles  
Years  
Erase/Program Cycles  
Data Retention  
4 KB Block  
, 32/64 KB block, or full chip  
Full Temperature Range  
20  
AT25QL641  
DS-25QL641–130E–10/2018  
65  
Table 8-4. Power-up Timing and Write Inhibit Threshold  
Parameter  
Symbol (1)  
Min  
10  
1
Max  
Units  
VCC (min) to CS low  
tVSL  
tPUW  
VWI  
µs  
Time Delay before Write Instruction  
Write Inhibit Threshold Voltage  
10  
ms  
V
1.0  
1.4  
1. These parameters are characterized at -10C and +85C only  
Figure 8-1. Power-up Timing and Voltage Levels  
8.1  
DC Electrical Characteristics  
Table 8-5. DC Electrical Characteristics  
Parameter  
Input Capacitance (1)  
Output Capacitance(1)  
Input Leakage  
Symbol  
CIN  
Condition  
Min  
Typ  
Max  
6
Units  
pF  
VIN = 0V  
COUT  
ILI  
VOUT = 0V  
8
pF  
±2  
±2  
µA  
Output Leakage  
ILO  
µA  
CS = VCC  
VIN = GND or VCC  
Standby Current  
ICC1  
ICC2  
ICC3  
10  
2
50  
20  
7
µA  
µA  
CS = VCC  
VIN = GND or VCC  
Power Down Current  
Current Read Data  
Dual/Quad 1 MHz (2)  
C = 0.1 VCC / 0.9 VCC  
IO = Open  
mA  
AT25QL641  
DS-25QL641–130E–10/2018  
66  
Table 8-5. DC Electrical Characteristics (Continued)  
Parameter  
Symbol  
Condition  
Min  
Typ  
Max  
Units  
Current Read Data  
C = 0.1 VCC / 0.9 VCC  
IO = Open  
ICC3  
15  
mA  
Dual/Quad 50 MHz(2)  
Current Read Data  
C = 0.1 VCC / 0.9 VCC  
IO = Open  
ICC3  
ICC3  
ICC3  
ICC4  
18  
20  
27  
20  
mA  
mA  
mA  
mA  
Dual/Quad 80 MHz(2)  
Current Read Data  
C = 0.1 VCC / 0.9 VCC  
IO = Open  
Dual/Quad 104 MHz(2)  
Current Read Data  
C = 0.1 VCC / 0.9 VCC  
IO = Open  
Dual/Quad 133 MHz(2)  
Current Write Status  
Register  
CS = VCC  
10  
Current Page Program  
Current Block Erase  
Current Chip Erase  
ICC5  
ICC6  
ICC7  
CS = VCC  
CS = VCC  
CS = VCC  
15  
15  
15  
25  
25  
25  
mA  
mA  
mA  
1. Tested on sample basis and specified through design and characterization data, TA = 25C, VCC = 1.8V.  
2. Checked board pattern.  
8.2  
AC Measurement Conditions  
Table 8-6. AC Measurement Conditions  
Parameter  
Symbol  
CL  
Min  
Max  
30  
5
Units  
Load Capacitance  
pF  
ns  
V
Input Rise and Fall Times  
Input Pulse Voltages  
tR, tF  
VIN  
0.2 VCC to 0.8 VCC  
0.3 VCC to 0.7 VCC  
0.5 VCC to 0.5 VCC  
Input Timing Reference Voltages  
Output Timing Reference Voltages  
IN  
V
OUT  
V
Figure 8-2. AC Measurement I/O Waveform  
AT25QL641  
DS-25QL641–130E–10/2018  
67  
8.3  
AC Electrical Characteristics  
Table 8-7. AC Electrical Characteristics  
Parameter (1)  
Symbol  
Alt  
Min  
Typ  
Max  
Unit  
Clock frequency for all instructions, except Read Data and  
Fast Read Data in SPI mode (03h, 0Bh)  
f
R
f
c
D.C.  
133  
MHz  
1.7V- 2.0V VCC and industrial temperature  
Clock freq. Fast Read Data instruction in SPI mode (0Bh)  
Clock freq. Read Data instruction in SPI mode (03h)  
Clock High, Low Time except Read Data (03h)  
Clock High, Low Time for Read Data (03h)  
Clock Rise Time peak-to-peak  
f
f
R
R
D.C.  
D.C.  
3.5  
8
104  
50  
MHz  
MHz  
ns  
(2)  
tCLH, tCLL  
(2)  
tCRLH, tCRLL  
ns  
(3)  
tCLCH  
0.1  
0.1  
5
V/ns  
V/ns  
ns  
(3)  
Clock Fall Time peak-to-peak  
tCHCL  
CS Active Setup Time relative to Clock  
CS Not Active Hold Time relative to Clock  
Data In Setup Time  
tSLCH  
tCHSL  
tDVCH  
tCHDX  
tCHSH  
tCHSH  
tSHSL  
tCSS  
5
ns  
tDSU  
tDH  
2
ns  
Data In Hold Time  
3
ns  
CS Active Hold Time relative to Clock  
CS NotActive Setup Time relative to Clock  
5
ns  
5
ns  
CS Deselect Time (for Read instructions/Write,  
Erase and Program instructions)  
tCSH  
100  
ns  
Output Disable Time  
tSHQZ(3)  
tCLQV  
tCLQV  
tCLQX  
tHLCH  
tCHHH  
tHHCH  
tCHHL  
tDIS  
tV1  
7
6
7
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
Clock Low to Output Valid  
(4)  
Clock Low to Output Valid (Except Main Read)  
tV2  
Output Hold Time  
tHO  
1.5  
5
HOLD Active Setup Time relative to Clock  
HOLD Active Hold Time relative to Clock  
HOLD Not Active Setup Time relative to Clock  
HOLD Not Active Hold Time relative to Clock  
HOLD to Output Low-Z  
5
5
5
(3)  
tHHQX  
t
LZ  
7
(3)  
HOLD to Output High-Z  
tHLQZ  
t
HZ  
12  
(5)  
Write Protect Setup Time Before CS Low  
Write Protect Setup Time After CS High  
CS High to Power Down Mode  
tWHSL  
20  
(5)  
tSHWL  
100  
(3)  
3
3
tDP  
(3)  
CS High to Standby Mode without  
Electronic Signature Read  
tRES1  
(3)  
CS High to Standby Mode with  
Electronic Signature Read  
tRES2  
1.8  
µs  
AT25QL641  
DS-25QL641–130E–10/2018  
68  
Table 8-7. AC Electrical Characteristics (Continued)  
Parameter (1)  
Symbol  
Alt  
Min  
Typ  
Max  
30  
Unit  
µs  
µs  
ms  
µs  
ms  
s
(3)  
CS High to next Instruction after Suspend  
CS High to next Instruction after Reset  
Write Status Register Time  
Byte Program Time  
tSUS  
(3)  
tRST  
30  
tw  
5
5
15  
t
t
t
BP  
PP  
SE  
150  
5
Page Program Time  
0.6  
0.06  
0.2  
0.35  
60  
Block Erase Time (4KB)  
0.4  
1.5  
2
Block Erase Time (32KB)  
t
t
BE1  
BE2  
s
Block Erase Time (64KB)  
s
Chip Erase Time  
t
CE  
300  
s
1. Commercial temperature only applies to Fast Read (FR). Industrial temperature applies to all other parameters.  
2. Clock high + Clock low must be less than or equal to 1/fc.  
3. Value guaranteed by design and/or characterization, not 100% tested in production.  
4. Contains: Read Status Register-1, 2/ Read Manufacturer/Device ID, Dual, Quad/ Read JEDEC ID/ Read Security Register/ Read Serial Flash Discovery  
Parameter.  
5. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.  
8.4  
Input Timing  
AT25QL641  
DS-25QL641–130E–10/2018  
69  
8.5  
Output Timing  
8.6  
Hold Timing  
AT25QL641  
DS-25QL641–130E–10/2018  
70  
9.  
Ordering Information  
9.1  
Ordering Code Detail  
A T 2 5 Q L 6 4 1 – S U E – T  
Designator  
Shipping Carrier Option  
T = Tape and reel  
Product Family  
Operating Voltage  
E = 1.7V to 2.0V  
Device Grade  
U
= Green, Matte Sn or Sn alloy,  
Industrial temperature range  
(–40°C to +85°C)  
Device Density  
641 = 64-megabit  
H = NiPdAu lead-frame  
Industrial Temp range (-40C+85C)  
Package Option  
= 8-pad, 5 x 6 x 0.6 mm UDFN  
M
S = 8-lead, 0.208" wide SOIC  
U = 8-ball 0.5mm pitch dBGA  
Operating  
Voltage  
Max. Freq.  
(MHz)  
Ordering Code (1) (2)  
AT25QL641-MHE-T  
AT25QL641-SUE-T  
AT25QL641-UUE-T  
Package  
8MA1  
Lead Finish  
Operation Range  
NiPdAu  
-40 oC to 85 oC  
8S4  
1.7V - 2.0V  
133 MHz  
(Industrial  
Temperature Range)  
SnAgCu  
8-WLCSP  
1. The AT25QL641 is shipped with the QE bit set to 1 enabling the Quad / QPI mode.  
2. The shipping carrier option code is not marked on the devices.  
Package Type  
8S4  
8-lead, 0.208" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)  
8MA1  
8-pad (5 x 6 x 0.6 mm body), Thermally Enhanced Plastic Ultra-Thin Dual Flat No-lead (UDFN)  
8-ball, 0.5mm pitch, die Ball Grid Array (dBGA)  
8-WLCSP  
AT25QL641  
DS-25QL641–130E–10/2018  
71  
10. Packaging Information  
10.1 8S4 – 8-lead, .208” EIAJ SOIC  
MILLIMETERS  
INCHES  
NOM  
0.077  
0.006  
0.071  
0.017  
0.008  
0.208  
0.311  
0.208  
0.050 BSC  
0.026  
-
SYMBOL  
MIN  
1.75  
0.05  
1.70  
0.35  
0.19  
5.18  
7.70  
5.18  
NOM  
1.95  
0.15  
1.80  
0.42  
0.20  
5.28  
7.90  
5.28  
1.27 BSC  
0.65  
-
MAX  
2.16  
0.25  
1.91  
0.48  
0.25  
5.38  
8.10  
5.38  
MIN  
MAX  
0.085  
0.010  
0.075  
0.019  
0.010  
0.212  
0.319  
0.212  
A
A1  
A2  
B
0.069  
0.002  
0.067  
0.014  
0.007  
0.204  
0.303  
0.204  
C
D
E
E1  
e
L
0.50  
0.80  
8˚  
0.020  
0.031  
8˚  
Θ
0˚  
0˚  
Y
-
-
0.10  
-
-
0.004  
5/5/16  
REV.  
DRAWING NO.  
GPC  
STN  
TITLE  
®
8S3, 8-lead, 0.208Body, Plastic Small  
Outline Package (EIAJ)  
Package Drawing Contact:  
contact@adestotech.com  
8S3  
A
AT25QL641  
DS-25QL641–130E–10/2018  
72  
10.2 8MA1 – UDFN  
E
C
Pin 1 ID  
SIDE VIEW  
D
y
TOP VIEW  
A1  
A
K
8
E2  
Option A  
0.45  
Pin #1  
Cham fer  
(C 0.35)  
1
2
3
Pin #1 Notch  
(0.20 R)  
COMMON DIMENSIONS  
(Unit of Measure = mm)  
(Option B)  
MIN  
MAX  
NOM  
NOTE  
SYMBOL  
7
D2  
6
A
0.45  
0.55  
0.60  
e
A1  
b
0.00  
0.35  
0.02  
0.40  
0.152 REF  
5.00  
4.00  
6.00  
3.40  
1.27  
0.60  
0.05  
0.48  
C
D
D2  
E
4.90  
3.80  
5.90  
3.20  
5.10  
4.20  
6.10  
3.60  
5
4
b
BOTTOM VIEW  
L
E2  
e
L
0.50  
0.00  
0.20  
0.75  
0.08  
y
K
4/15/08  
GPC  
YFG  
DRAWING NO.  
TITLE  
REV.  
®
Package Drawing Contact:  
contact@adestotech.com  
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally  
Enhanced Plastic Ultra Thin Dual Flat No Lead  
Package (UDFN)  
8MA1  
D
AT25QL641  
DS-25QL641–130E–10/2018  
73  
10.3 8-WLCSP — die Ball Grid Array  
TOP VIEW  
1
2
3
4
A
B
C
D
E
F
SIDE VIEW  
BOTTOM VIEW  
0.45  
4
3
2
1
A
B
C
D
E
F
COMMON DIMENSIONS  
(Unit of Measure = mm)  
Pin Assignment Matrix  
A
B
C
D
E
F
NC  
NC  
1
I/O0(SI)  
VCC I/O3(HOLD)  
SCK  
2
3
4
I/O1(SO) I/O2(WP)  
GND  
CS  
NC  
NC  
11/10/16  
GPC  
YFG  
DRAWING NO.  
TITLE  
REV.  
®
Package Drawing Contact:  
contact@adestotech.com  
8-WLCSP, 8-ball (2 x 4 Array), Wafer Level Chip Scale  
Package (WLCSP)  
8W-8A  
A
AT25QL641  
DS-25QL641–130E–10/2018  
74  
11. Revision History  
Revision  
Date  
Change Description  
Initial release of AT25QL641 datasheet.  
A
B
12/2016  
02/2017  
Updated Note 1 on Table 8.1.  
Updated Table 1-1 (WP pin description). Updated 5.1 (Write Protect Features). Updated  
Tables 6-1 and 6-2. Restored Sector and Block Protect descriptions. Restored Status  
Register Memory Protection tables (Tables 6-3 and 6-4). Added clarification to Write Status  
Register (01h) description. Updated document status from Advanced to Complete. Added  
Errata 11.1.  
C
D
05/2017  
11/2017  
Removed references to 133 MHz option. Removed RESET option. Removed 18-WLCSP and  
24-ball BGA package options. Removed references to ACC feature.  
Added 133 MHz frequency option to document.  
Updated maximum frequency to 133 MHz on page 1.  
Updated frequencies in Section 1.  
Updated formatting of all tables in document.  
Updated Word Read Quad I/O instruction diagram in Figure 7-50.  
Updated frequency in Burst Read with Wrap instruction in Figure 7-54.  
Updated tables in Section 7.33, Set Read Parameters (C0h).  
Updated AC Electrical Characteristics table in Table 8-7 with 133 MHz option.  
Clarified frequency and timing parameters for the 03h and 0Bh instructions in Table 8-7.  
Updated ordering code table in Section 9.1.  
E
10/2018  
Removed DWF package.  
Updated maximum continuous data transfer rate from 52 Mbps to 66 Mbps on page 1.  
11.1 Errata:  
Appendix A  
1. If Status Register-2 CMP bit is 0, and Status Register-1 bits {SEC,TB,BP2,BP1,BP} are {1,0,0,0,1}, address 7FF000h-  
7FFFFFh is protected from any Program or Erase commands. However, this setting does not protect the rest of Sector  
127 or the rest of Block 255 from 64Kbit or 32kbit Block Erase commands. If a 64Kbit Block Erase Command is issued to  
Sector 127, address 7F0000h-7FEFFFh will be erased. If a 32Kbit Block Erase Command is issued to Block 255,  
address 7F8000h-7FEFFFh will be erased.  
Workaround: If this protection bit combination is used and the behavior described in Note 3 is required, avoid using  
64Kbit or 32kbit Block Erase commands for this specific memory region.  
2. If Status Register-2 CMP bit is 1, and Status Register-1 bits {SEC,TB,BP2,BP1,BP} are {1,1,0,0,1}, address 001000h-  
7FFFFFh is protected from any Program or Erase commands. However, this setting does not protect the rest of Sector 0  
or the rest of Block 0 from 64Kbit or 32kbit Block Erase commands. If a 64Kbit Block Erase Command is issued to Sector  
0, address 000000h-000FFFh will be erased. If a 32Kbit Block Erase Command is issued to Block 0, address 000000h-  
000FFFh will be erased.  
Workaround: If this protection bit combination is used and the behavior described in Note 3 is required, avoid using  
64Kbit or 32kbit Block Erase commands for this specific memory region.  
AT25QL641  
DS-25QL641–130E–10/2018  
75  
Corporate Office  
California | USA  
Adesto Headquarters  
3600 Peterson Way  
Santa Clara, CA 95054  
Phone: (+1) 408.400.0578  
Email: contact@adestotech.com  
© 2018 Adesto Technologies. All rights reserved. DS-25QL641-130E–10/2018  
Adesto, the Adesto logo, CBRAM and DataFlash are trademarks or registered trademarks of Adesto Technologies Corporation in the United States and other countries. Other company, product, and service  
names may be trademarks or service marks of others. Adesto products are covered by one or more patents listed at http://www.adestotech.com/patents.  
Disclaimer: Adesto Technologies Corporation (“Adesto”) makes no warranties of any kind, other than those expressly set forth in Adesto’s Terms and Conditions of Sale at  
http://www.adestotech.com/terms-conditions. Adesto assumes no responsibility or obligations for any errors which may appear in this document, reserves the right to change devices or specifications  
herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by Adesto  
herewith or in connection with the sale of Adesto products, expressly or by implication. Adesto’s products are not authorized for use in medical applications (including, but not limited to, life support systems  
and other medical equipment), weapons, military use, avionics, satellites, nuclear applications, or other high risk applications (e.g., applications that, if they fail, can be reasonably expected to result in  
personal injury or death) or automotive applications, without the express prior written consent of Adesto.  

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