521-9740 [DIALIGHT]
Photo Transistor, 900nm, 0.015A I(C), 2 PIN;
| 型号： | 521-9740 |
| 厂家： | 
Dialight Corporation |
| 描述： | Photo Transistor, 900nm, 0.015A I(C), 2 PIN LTE 光电 |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEW
3mm
Dia lig h t
Infrared Discrete LED
Silicon PNP Photo Transistor
521-9740
Features
5.18
[.204]
• Silicon PNP type transistor
• Narrow acceptance angle
• Daylight filtered
4.09
[.161]
3.98
[.157]
.61
[.024]
SQ.
.79
[.031]
.71
[.028]
3.10
[.122]
• Good linearity
• High reliability
3.51
[.138]
1.80
[.071]
ANODE
CHIP POSITION
ABS OLUTE MAXIMUM RATINGS (TA=25°C)
6.30
[.248]
28.96
[1.140]
Operating and Storage
Temperature Range (°C)
-55/+100
Soldering Temperature
Dimensions in mm [inches]
(≥2mm from case bottom)
Dip Soldering Time (T ) t≤5 s
260°C
300°C
35V
S
Iron Soldering Time (T ) t≤3 s
S
Collector Emitter Voltage (V
)
CEO
4
Collector Current (I )
C
15 mA
75 mA
165 mW
450 kW
Collector Peak Current (I ) t<10µs
PK
Power Dissipation (P
) T =25°C
A
TOT
Thermal Resistance (R
)
THJA
OP ERATING CHARACTERIS TICS (TA=25°C)
Parameter
Symbol
Value
Unit
nm
Maximum Sensitivity Wavelength
Spectral Range, Photosensitivity
Radiant Sensitive Area
λ
900
Smax
λ
730 min, 1120 max
.045 typ
nm
A
H
1
2θ /
2
mm2
mm
Deg.
Distance, Chip Surface and Lens
Full Angle
2.4 typ, 2.8 max
24°
Capacitance
(V =0 V, f=1 MHz, E=0 lux)
CE
C
5
pF
nA
CE
Leakage Current (V =25 V, E=0 lx)
CE
I
1 typ, 200 max
ce0
Photocurrent, Collector-
Emitter(1) (Ee=0.5 mW/cm2,
V
=5 V, λ=950 nm)
I
.63 min, 1.5 typ
6.5 typ
mA
CE
Rise/Fall Time (I =1 mA,
PCE
C
V
=5 V, R =1kΩ)
t ,t
µs
CC
L
R F
Collector Emitter
Saturation Voltage
(I =I
PCEmin (1) • 0.3, λ=950 nm
C
E =0.5 mW/cm2)
V
200
mV
CEsat
e
Notes: (1) I
PCEmin
= minimum photocurrent
Solder Adherance per MIL-STD-202E, Method 208C
Dialight Corporation • 1913 Atlantic Avenue • Manasquan, NJ 08736 • TEL: (732) 223-9400 • FAX: (732) 223-8788 • www.dialight.com
4-61
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