NJ10N80F-LI [DGNJDZ]
10A 800V N-CHANNEL POWER MOSFET;
| 型号： | NJ10N80F-LI |
| 厂家： | 
Nanjing International |
| 描述： | 10A 800V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：748K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NJ10N80 POWER MOSFET
10A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ10N80 uses advanced proprietary, planar stripe,
DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device
is suitable for use as a load switch or in PWM applications.
1
TO-220
FEATURES
* VDS = 800V
* ID = 10A
* RDS(ON) =1.1Ω@VGS = 10V.
* Ultra Low Gate Charge ( Typical 45nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 15pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
SYMBOL
ORDERING INFORMATION
Pin Assignment
Packing
Ordering Number
Package
1
G
G
2
D
D
3
S
S
NJ10N80-LI
TO-220
TO-220
TO-220F
Tape Box
Bulk
Tube
NJ10N80-BL
NJ10N80F-LI
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
NJ10N80 POWER MOSFET
TO-220F1
6±
ABSOLUTE MAXIMUM RATINGS (TC =25°ɋ, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TC = 25°ɋ)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
SYMBOL
VDSS
VGSS
ID
RATINGS
800
±±0
10
UNIT
V
V
A
A
IDM
IAR
40
10
A
Single Pulsed (Note ±)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAS
EAR
dv/dt
920
24
4.0
mJ
mJ
V/ns
Avalanche Energy
TO-220
TO-220F
TO-220
156
Power Dissipation
W
63
PD
1.25
Linear Derating Factor above TC = 25°ɋ
W/°ɋ
TO-220F
0.504
Junction Temperature
Storage Temperature
TJ
TSTG
150
-55 ~ +150
°ɋ
°ɋ
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
±. L=17.±mH, IAS=10A, VDD=50V, RG=25ȍ, Starting TJ=25°C
4. ISD 10 A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ=25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220F
TO-220
Junction to Ambient
Junction to Case
șJA
°ɋ/W
TO-220
0.8
șJC
°ɋ/W
TO-220F
1.98
NJ10N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°ɋ, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS =0 V, ID =250 μA
DS =800V, VGS =0 V
VDS =640V, TC =125°C
VDS =0 V, VGS = ±±0 V
800
V
V
10
100
Drain-Source Leakage Current
Gate-Body Leakage Current
μA
IGSS
±100 nA
Breakdown Voltage Temperature Coefficient ǻBVDSS/ǻTJ ID=250μA, Referenced to 25°C
0.98
V/°ɋ
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS =VGS, ID =250μA
VGS = 10V, ID = 5.0A
±.0
5.0
0.9 1.1
V
ȍ
CISS
COSS
CRSS
2150 2800 pF
180 2±0
15 20
VDS =25V, VGS =0V,
f=1MHz
Output Capacitance
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(ON)
tR
tD(OFF)
tF
50 110
1±0 270
90 190
80 170
VDD=400V, ID=10.0A,
RG=25ġ(Note 1,2)
ns
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
45
1±.5
17
58
VDS =640V, VGS =10V,
ID =10.0A (Note 1,2)
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
IS=10.0 A,VGS=0V
1.4
V
A
IS
10.0
ISM
40.0
Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
7±0
10.9
ns
nC
VGS = 0V, dIF /dt = 100 A/μs,
IS = 10.0A (Note 1)
Notes: 1. Pulse Test: Pulse Width ±00μs, Duty Cycle 2%.
2. Independent of operating temperature.
NJ10N80 POWER MOSFET
TEST CIRCUIT
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
NJ10N80 POWER MOSFET
TEST CIRCUIT(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
NJ10N80 POWER MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-State
Resistance Characteristics
Drain Current vs. Source to Drain Voltage
10
5
VGS=10V,
ID=5A
8
6
4
3
4
2
0
2
1
0
200
400
600
1
2
3
0
800 1000
0
4
5
Source to Drain Voltage,VSD (mV)
Drain to Source Voltage, VDS (V)
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
3
400
350
2.5
300
250
200
150
2
1.5
1
0.5
0
100
50
0
0
1
2
4
3
0
200
400
600
800
1000
Gate Threshold Voltage,VTH (V)
Drain-Source Breakdown Voltage,BVDSS(V)
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