DB606 [DEC]
6 AMP SILICON BRIDGE RECTIFIERS; 6 AMP硅桥式整流器
| 型号： | DB606 |
| 厂家： | 
DIOTEC ELECTRONICS CORPORATION |
| 描述： | 6 AMP SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-600-1D
ABDB-600-1D
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
6 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE
DT
SERIES DB600 - DB610 and ADB604 - ADB608
DB602
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
BH
SURGE OVERLOAD RATING TO 250 AMPS PEAK
LL
UL RECOGNIZED - FILE #E124962
_
LD
+
RoHS COMPLIANT
D1
MECHANICAL DATA
MILLIMETERS
INCHES
+
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated copper pins
SYM
MIN
14.7
5.8
MAX
15.7
6.9
MIN
0.58
0.23
MAX
0.62
0.27
D1
BL
BL
BH
D1
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.13 Ounces (3.6 Grams)
_
10.3
11.3
0.405 0.445
0.75 n/a
0.039 0.042
LL
19.0
n/a
LD
1.0
1.1
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
UNITS
Series Number
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
V
V
VOLTS
V
RMS Reverse Voltage
V
Power Dissipation in V
Region for 100 mS Square Wave
Region
P
WATTS
Continuous Power Dissipation in V
P
I t
I
@ T =80 C (Heat Sink Temp)
AMPS
Thermal Energy (Rating for Fusing) t < 8.3mSec
SEC
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). Tc = 60 C
AMPS
I
T , T
V
Average Forward Rectified Current, T = 60 C (Note 2)
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
°C
See Note 5
Maximum Avalanche Voltage
V
VOLTS
See Note 5
Maximum Forward Voltage (Per Diode) at 6 Amps DC
V
Typical Junction Capacitance (Note 4)
C
pF
@ T = 25 C
@T = 125 C
Maximum Reverse Current at Rated V
I
mA
V
VOLTS
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance, Junction to Case (Note 2)
R
C/W
E25
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRDB-600-2D
ABDB-600-2D
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
6 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
9.0
60Hz
7.5
6.0
4.5
3.0
1.5
0
Resistive or Inductive Loads
Case, Tc
NOTE 1
NOTE 2
0
50
100
150
Number of Cycles at 60 Hz
Temperature, C
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 1. FORWARD CURRENT DERATING CURVE
100
100
10
1.0
0.1
1.0
NOTE 3
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
NOTES
(1) Case Temperature, T With Bridge Mounted on 4"Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
NOTE 4
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
50 - 400V
600 - 1000V
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
E26
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