DC9013 [DCCOM]

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR; 作者: NPN外延平面型晶体管技术规格
DC9013
型号: DC9013
厂家: DC COMPONENTS    DC COMPONENTS
描述:

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
作者: NPN外延平面型晶体管技术规格

晶体 晶体管 局域网
文件: 总1页 (文件大小:216K)
中文:  中文翻译
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DC COMPONENTS CO., LTD.  
DC9013  
DISCRETE SEMICONDUCTORS  
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
Designed for use in 1W output amplifier of portable  
redios in class B push-pull operation.  
TO-92  
Pinning  
1 = Emitter  
2 = Base  
3 = Collector  
.190(4.83)  
.170(4.33)  
2oTyp  
2oTyp  
.190(4.83)  
.170(4.33)  
Absolute Maximum Ratings(TA=25oC)  
.500  
(12.70)  
Min  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
40  
20  
.022(0.56)  
.014(0.36)  
.022(0.56)  
.014(0.36)  
.050  
(1.27)  
V
Typ  
.100  
Typ  
5
V
(2.54)  
500  
mA  
mA  
mW  
oC  
oC  
.148(3.76)  
.132(3.36)  
3
2 1  
Base Current  
IB  
100  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PD  
625  
.050  
5oTyp. (1.27)  
Typ  
5oTyp.  
TJ  
+150  
-55 to +150  
Dimensions in inches and (millimeters)  
TSTG  
Electrical Characteristics  
(Ratings at 25oC ambient temperature unless otherwise specified)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
40  
20  
5
Typ  
Max  
-
Unit  
V
Test Conditions  
IC=100µA, IE=0  
Collector-Base Breakdown Volatge  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Volatge  
Collector Cutoff Current  
-
-
-
V
IC=1mA, IB=0  
-
-
V
IE=100µA, IC=0  
-
-
100  
100  
0.6  
1.2  
0.9  
300  
-
nA  
nA  
V
VCB=25V, IE=0  
Emitter Cutoff Current  
IEBO  
-
-
VEB=3V, IC=0  
Collector-Emitter Saturation Voltage(1) VCE(sat)  
-
-
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
IC=10mA, VCE=1V  
IC=50mA, VCE=1V  
IC=500mA, VCE=1V  
IC=10mA, VCE=1V, f=100MHz  
VCB=10V, f=1MHz  
Base-Emitter Saturation Voltage(1)  
Base-Emitter On Voltage  
DC Current Gain(1)  
VBE(sat)  
VBE(on)  
hFE1  
hFE2  
fT  
-
-
V
-
-
V
64  
40  
100  
-
120  
-
-
-
-
-
Transition Frequency  
Output Capacitance  
-
MHz  
pF  
Cob  
8
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%  
Classification of hFE1  
Rank  
D
E
F
G
H
I
I1  
I2  
Range  
64~91  
78~112  
96~135  
112~166  
144~202  
176~300  
176~246  
214~300  

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