1N5401 [DCCOM]

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER; 硅整流技术规范
1N5401
型号: 1N5401
厂家: DC COMPONENTS    DC COMPONENTS
描述:

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
硅整流技术规范

二极管
文件: 总2页 (文件大小:413K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5400  
THRU  
DC COMPONENTS CO., LTD.  
RECTIFIER SPECIALISTS  
R
1N5408  
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER  
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 3.0 Amperes  
FEATURES  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-27  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: MIL-STD-202E, Method 208 guaranteed  
* Polarity: Color band denotes cathode end  
* Mounting position: Any  
* Weight: 1.18 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
SYMBOL  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
V
DC  
O
100  
1000  
Maximum Average Forward Rectified Current  
I
3.0  
Amps  
.375*(9.5mm) lead length at T  
L
= 105oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
I
FSM  
200  
Amps  
Volts  
1.1  
5.0  
500  
V
F
Maximum Instantaneous Forward Voltage at 3.0A DC  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
@T  
A
A
= 25oC  
= 100oC  
uAmps  
I
R
Maximum Full Load Reverse Current Average, Full Cycle  
.375*(9.5mm) lead length at T  
= 75oC  
30  
uAmps  
pF  
L
Typical Junction Capacitance (Note)  
CJ  
40  
Typical Thermal Resistance  
R θ J A  
30  
0C/ W  
0 C  
T
J
, TSTG  
-65 to + 175  
Operating and Storage Temperature Range  
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts  
112  
EXIT  
BACK  
NEXT  
RATING AND CHARACTERISTIC CURVES (1N5400 THRU 1N5408)  
DC COMPONENTS CO., LTD.  
R
113  
EXIT  
BACK  
NEXT  

相关型号:

1N5401-AP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

1N5401-AP-HF

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
MCC

1N5401-B

3.0A RECTIFIER
ONSEMI

1N5401-B

Rectifier Diode
MCC

1N5401-B

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon
FRONTIER

1N5401-B

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
DIODES

1N5401-BC01

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5401-BC01-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5401-BC01-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5401-BC02

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5401-BC02-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5401-BC02-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC