2SB772 [DAYA]
PNP SILICON POWER TRANSISTOR; PNP硅功率晶体管
| 型号： | 2SB772 |
| 厂家： | 
DAYA ELECTRIC GROUP CO., LTD. |
| 描述： | PNP SILICON POWER TRANSISTOR |
| 文件： | 总3页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
PNP SILICON POWER2TSRABNS7IS7TO2R
PNP SILICON POWER TRANSISTOR
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
8.5 MAX.
3.2 ±±.2
2.8 MAX.
FEATURES
• Low saturation voltage
VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = −2 V, IC = −1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
12 TYP.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
−55 to +150°C
+±.±8
Junction Temperature
150°C Maximum
±.55
–±.±5
Maximum Power Dissipation
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
1.0 W
10 W
+±.±8
±.8
–±.±5
1.2 TYP.
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
−40 V
−30 V
−5.0 V
−3.0 A
−7.0 A
2.3 TYP.
2.3 TYP.
1: Emitter
Note
2: Collector: connected to mounting plane
3: Base
Collector Current (pulse)
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
SYMBOL
hFE1
hFE2
fT
Cob
ICBO
IEBO
VCE(sat)
VBE(sat)
TEST CONDITIONS
VCE = −2.0 V, IC = −20 mANote
VCE = −2.0 V, IC = −1.0 mANote
VCE = −5.0 V, IC = −0.1 A
VCB = −10 V, IE = 0, f = 1.0 MHz
VCB = −30 V, IE = 0 A
MIN.
30
60
TYP.
220
160
80
MAX.
400
UNIT
MHz
pF
µA
µA
V
55
−1.0
−1.0
−0.5
−2.0
VEB = −3.0 V, IC = 0 A
IC = −2.0 A, IB = −0.2 ANote
IC = −2.0 A, IB = −0.2 ANote
−0.3
−1.0
V
Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
60 to 120
100 to 200
160 to 320
200 to 400
Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2SB772
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.)
V
CE
I
C
T
C
T
A
I
C(pulse)
50%
V
CE
I
C(DC)
h
FE
V
BE
TC = 25°C
I
B
VCE
VCE
IC
•
I
C
= 10 A
I
B
VCE
I
I
E
C
= 0 A (Cob
= 0 A (Cib
)
)
VBE(sat)
Cib
Cob
IC
V
V
CB
EB
IC
2
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