DS1384FP-12 [DALLAS]

Watchdog Timekeeping Controller; 看门狗计时控制器
DS1384FP-12
型号: DS1384FP-12
厂家: DALLAS SEMICONDUCTOR    DALLAS SEMICONDUCTOR
描述:

Watchdog Timekeeping Controller
看门狗计时控制器

计时器或实时时钟 微控制器和处理器 外围集成电路 双倍数据速率
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DS1384  
Watchdog Timekeeping Controller  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
Keeps track of hundredths of seconds,  
seconds, minutes, hours, days, date of the  
month, months, and years with leap year  
compensation valid up to 2100  
Watchdog timer restarts an out-of-control  
processor  
Alarm function schedules real-time related  
activities  
Programmable interrupts and square wave  
outputs  
Bytewide RAM-like access  
50 bytes of on board user RAM  
Greater than 10 years timekeeping and data  
retention in the absence of power with small  
lithium coin cells  
Supports up to 128k x 8 of external static RAM  
All timekeeping registers and on board RAM  
are individually addressable via the address  
and data bus  
44  
34  
1
33  
INTB/(INTB)  
A15  
VBAT1  
WE  
A13  
A8  
NC  
A14  
A12  
A7  
A6  
A5  
A4  
A9  
A11  
OE  
A3  
A2  
A1  
A10  
CE  
OER  
23  
11  
12  
22  
PIN DESCRIPTION  
ORDERING INFORMATION  
INTA  
- Interrupt Output A (open drain)  
DS 1384FP-12  
44-Pin FP  
INTB (INTB) - Interrupt Output B (open drain)  
A0-A16  
- Address Inputs  
DQ0-DQ7  
- Data Input/Output  
CE  
OE  
- Chip Enable  
- Output Enable  
WE  
- Write Enable  
VCC  
- +5V Input  
GND  
NC  
SQW  
X1, X2  
- Ground  
- No Connection  
- Square Wave Output  
- 32.768 kHz Crystal Connections  
PFO  
CEO  
- Power Fail Output  
- Chip Enable RAM  
OER  
- Output Enable RAM  
- Voltage Out  
- +3V Battery Input  
- +3V Battery Input  
VCCO  
VBAT1  
VBAT2  
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091300  
DS1384  
DESCRIPTION  
The DS1384 Watchdog Timekeeping Controller is a self-contained real time clock, alarm, watchdog  
timer, and interval timer which provides control of up to 128k x 8 of external low power CMOS static  
RAM in a 44-pin quad flat pack package. An external crystal and battery are the only components  
required to maintain time of day and RAM memory contents in the absence of power. Access to all RTC  
functions and the external RAM is the same as conventional bytewide SRAM. Data is maintained in the  
Watchdog Timekeeper by intelligent control circuitry which detects the status of VCC and write protects  
both memory and timekeeping functions when VCC is out of tolerance. Timekeeper information includes  
hundredths of seconds, seconds, minutes, hours, day, date, month, and year. The date at the end of the  
month is automatically adjusted for months with less than 31 days, including correction for leap year. The  
timekeeper operates in either 12- or 24-hour format with an AM/PM indicator. The watchdog internal  
timer provides watchdog alarm windows and interval timing between 0.01 seconds and 99.99 seconds.  
The real time alarm provides for preset times of up to one week. All of the RTC functions and the  
internal 50 bytes of RAM reside in the lower 64 bytes of the attached RAM memory map. The externally  
attached static RAM is controlled by the DS1384 via the OER and CEO signals.  
Automatic backup and write protection for an external SRAM is provided through the VCCO, CEO and  
OER pins. The lithium energy source used to permanently power the real time clock is also used to retain  
RAM data in the absence of VCC power through the VCCO pin. The chip enable output to RAM (CEO ) and  
the output enable to RAM (OER ) are controlled during power transients to prevent data corruption. The  
DS1384 is a complete one-chip solution in that an external crystal and battery are the only components  
required to maintain time of day memory status in the absence of power.  
SIGNAL DESCRIPTIONS  
VCC, GND - DC power inputs: DC operating voltage is provided to the device on these pins. VCC is the  
+5V input.  
VBAT1, VBAT2 - Battery inputs for any standard 3-volt lithium cell or other energy source. Battery voltage  
must be held between 2.4 and 4-volts for proper operation. In the absence of power, the DS1384 will have  
a maximum load of 0.5 µA at 25°C. This should be added to the amount of current drawn from the  
external RAM in standby mode at 25°C to size the external energy source. The DS1384 samples VBAT1  
and VBAT2 and always selects the battery with the higher voltage. If only one battery is used, the unused  
battery input must be grounded.  
A16-A0 - Address Bus (inputs): The address bus inputs qualified by CE , OE , WE , and VCC voltage are  
used to select the on-chip 64 timekeeping/RAM registers within the memory map of the external SRAM  
controlled as nonvolatile storage. When the qualified address bus value is within the range of  
00000H - 0003FH, one of the internal registers will be selected and OER will remain inactive. When the  
value is outside of the range, OE will be passed through to OER .  
D7-D0 - Data Bus (bi-directional): When a qualified address from 00000H through 0003FH is presented  
to the device, data is passed to or from the on-chip 64 timekeeping/RAM registers via the data bus lines.  
Data will be written on the rising edge of WE when CE is active. If CE is active without WE , data is  
read from the device and driven onto the data bus pins when OE is low.  
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DS1384  
VCCO - Switched DC power for SRAM (output): This pin will be connected to VCC when VCC voltage is  
above VSO (the greater of VBAT1 or VBAT2). When VCC voltage falls below this level, VCCO will be  
connected to the higher voltage battery pin.  
CEO - RAM chip enable (output; active low): When power is good the CE input will be passed through  
to CEO . If VCC is below VPF, CEO will remain at an inactive high level.  
OER - RAM output enable (output; active low): When power is good and the address value is not within  
the range of 00000H and 0003FH, and CE is active, the OE input will be passed through to OER . If these  
conditions are not met, OER will remain at an inactive high level.  
CE - Chip enable (input; active low): The chip enable signal must be asserted low during a bus cycle to  
access the on-chip timekeeping RAM registers, or to access the external RAM via CEO .  
OE - Output enable (input; active low): The output enable signal identifies the time period when either  
the RTC or the external SRAM drives the bus with read data, provided that CE is valid with WE  
disabled. When one of the 64 on-chip registers is selected during a read cycle, the OE is the enable signal  
for the DS1384 output buffers and the data bus will be driven with read data. When the external RAM is  
selected during a read cycle, the OE signal will be passed through to the OER pin so that read data will be  
driven by the external SRAM.  
WE - Write enable (input; active low): The write enable signal identifies the time period during which  
data is written to either the on-chip registers or to an external SRAM location. When one of the on-chip  
64 registers is addressed, data will be written to the selected register on the rising edge of WE .  
INTA - Interrupt Output A (output; active low): Interrupt output A can be programmed as a Time of Day  
Alarm or as a Watchdog Alarm (Interrupt output B becomes the alternate function). In addition, INTA  
can be programmed to output either a pulse or a level.  
INTB - Interrupt Output B (output; active high or low): Interrupt output B outputs the alarm (Time of  
Day or Watchdog) that is not selected for INTA . Interrupt output B is programmable high or low.  
Both INTA and INTB (INTB) are open drain outputs. The two interrupts and the internal clock continue to  
run regardless of the level of VCC. However, it is important to insure that the pull-up resistors used with  
the interrupt pins are never pulled up to a value which is greater than VCC + 0.3V. As VCC falls below  
approximately 3.0 volts, a power switching circuit turns the lithium energy source on the maintain the  
clock, and timer data functionality. It is also required to insure that during this time (battery backup  
mode), the voltage present at INTA and INTB (INTB) does never exceed VBAT. At all times the current on  
each should not exceed +2.1 mA or -1.0 mA.  
X1, X2 - Crystal inputs: Connections for a standard 32.768 kHz quartz crystal. When ordering, request a  
load capacitance or 6 pF. The internal oscillator circuitry is designed for operation with a crystal having a  
specified load capacitance (CL) of 6 pF.  
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DS1384  
For more information on crystal selection and crystal layout considerations, please consult Application  
Note 58, “Crystal Considerations with Dallas Real Time Clocks.”  
SQW - Square Wave (output): This pin can be programmed to output a 1024 Hz square wave signal.  
When the signal is turned off, the pin is high Z.  
PFO - Power Fail Signal (output; active low when VWP occurs): High state occurs tREC after power-up and  
VCC >4.5 volts.  
ADDRESS DECODING  
The DS1384 accommodates 17 address lines, which allows direct connection of up to 128k bytes of static  
RAM. The lower 14 bytes of RAM, regardless of the density used, will always contain the timekeeping,  
alarm, and watchdog registers. The 14 clock registers reside in the lower 14 RAM locations without  
conflict by inhibiting the OER (output enable RAM) signal during clock access. Since the watchdog  
timekeeping chip actually contains 64 registers (14 RTC and 50 user RAM), the lower 64 bytes of any  
attached memory resides within the DS1384. However, the RAM’s physical location is transparent to the  
user and the memory map looks continuous from the first clock address to the upper most attached RAM  
address.  
OPERATION - READ CYCLE  
The DS1384 executes a read cycle whenever WE is inactive (high) and CE and OE are active (low). The  
unique address specified by the address inputs (A0-A16) defines which of the on-chip 64 RTC/RAM or  
external SRAM locations is to be accessed. When the address value presented to the DS1384 is in the  
range of 00000H through 0003FH, one of the 64 on-chip registers will be selected and valid data will be  
available to the eight data output drivers within tACC (access time) after the address input signal is stable,  
providing that the CE and OE access times are also satisfied. If they are not, then data access must be  
measured from the latter occurring signal (CE or OE ) and the limiting parameter is either tCO for CE or  
tOE for OE rather than the address access time. When one of the on-chip registers is selected for read, the  
OER signal will remain inactive throughout the read cycle.  
When the address value presented to the DS1384 is in the range of 00040H through 1FFFFH, an external  
SRAM location will be selected. In this case the OE signal will be passed to the OER pin, with the  
specified delay times of tAOEL or tOERL  
.
OPERATION - WRITE CYCLE  
The DS1384 is in the write mode whenever the WE (Write Enable) and CE (Chip Enable) signals are in  
the active (low) state after the address inputs are stable. The latter occurring falling edge of CE or WE  
will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of CE  
or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state  
for a minimum recovery state (tWR) before another cycle can be initiated. Data must be valid on the data  
bus with sufficient Data Set Up (tDS) and Data Hold Time (tDH) with respect to the earlier rising edge of  
CE or WE . The OE control signal should be kept inactive (high) during write cycles to avoid bus  
contention. However, if the output bus has been enabled (CE and OE active), then WE will disable the  
outputs in tWEZ from its falling edge.  
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DS1384  
When the address value presented to the DS1384 during the write is in the range of 00000H through  
0003FH, one of the 64 on-chip registers will be selected and data will be written into the device.  
When the address value presented to the DS1384 during the write is in the range of 00040H through  
1FFFFH, an external SRAM location will be selected.  
DATA RETENTION MODE  
When VCCI is within nominal limits (VCC > 4.5 volts) the DS1384 can be accessed as described above  
with read or write cycles. However, when VCC is below the power-fail point, VPF, (point at which write  
protection occurs) the internal clock registers and external RAM is blocked from access. This is  
accomplished internally by inhibiting access to the clock registers via the CE signal. At this time the  
power fail output signal ( PFO ) is driven active and will remain active until VCC returns to nominal levels.  
External RAM access is inhibited in a similar manner by forcing CEO to high level. This level is within  
0.2 volts of the VCCI input. CEO will remain at this level as long as VCCI remains at an out-of-tolerance  
condition. When VCCI falls below the level of the battery (VBAT1 or VBAT2), power input is switched from  
the VCCI pin to the VBAT pin and the clock registers are maintained from the attached battery supply.  
External RAM is also powered by the VBAT input when VCCI is below VBAT pin through the VCCO pin. The  
VCCO pin is capable of supplying 100 µA of current to the attached memory with less than 0.3 volts drop  
under this condition. On power-up, when VCCI returns to in-tolerance conditions, write protection  
continues for 150 ms by inhibiting CEO . The PFO signal also remains active during this time. The  
DS1384 is capable of supporting two batteries which are used in a redundant fashion for applications  
which require added reliability or increased battery capacity. When two batteries are used, the higher of  
the two is selected for use. A selected battery will remain as backup supply until it is significantly below  
the other. When the selected battery voltage falls below the alternate battery by about 0.6 volts, the  
alternate battery is selected and then becomes the backup supply. This switching occurs transparently to  
the user and continues until both batteries are exhausted. When only a single battery is required, both  
battery inputs can be connected together. However, a more effective method of using a single battery  
supply is to ground the unused battery input. When using a single battery, VBAT1 is the preferred input.  
WATCHDOG TIMEKEEPER REGISTERS  
The DS1384 Watchdog Timekeeper Controller has 14 internal registers, which are 8 bits wide and  
contain all of the Timekeeping, Alarm, Watchdog, Control, and Data information. The Clock, Calendar,  
Alarm and Watchdog Registers are memory locations, which contain external (user accessible) and  
internal copies of the data. The external copies are independent of internal functions except that they are  
updated periodically by the simultaneous transfer of the incremented internal copy (see Figure 1). The  
Command Register bits are affected by both internal and external functions. This register will be  
discussed later. The 50 bytes of RAM registers are accessed from the external address and data bus and  
reside or overlay external static RAM. Registers 0, 1, 2, 4, 6, 8, 9 and A contain time of day and date  
information (see Figure 2). Time of day information is stored in BCD. Registers 3, 5, and 7 contain the  
time of day alarm information. Time of day alarm information is stored in BCD. Register B is the  
Command Register and information in this register is binary. Register C and D are the Watchdog Alarm  
Registers and information, which is stored in these two registers, is in BCD. Registers 0000EH through  
register 0003FH are on-chip user bytes and can be used to contain data at the user’s discretion.  
5 of 17  
DS1384  
DS1384 BLOCK DIAGRAM Figure 1  
6 of 17  
DS1384  
DS1384 WATCHDOG TIMEKEEPER REGISTERS Figure 2  
7 of 17  
DS1384  
TIME OF DAY ALARM MASK BITS Figure 3  
REGISTER  
MINUTES HOURS DAYS  
1
0
0
0
1
1
0
0
1
1
1
0
ALARM ONCE PER MINUTE  
ALARM WHEN MINUTES MATCH  
ALARM WHEN HOURS AND MINUTES MATCH  
ALARM WHEN HOURS, MINUTES, AND DAYS MATCH  
NOTE:  
ANY OTHER BIT COMBINATIONS OF MASK BIT SETTINGS PRODUCE ILLOGICAL  
OPERATION.  
TIME OF DAY REGISTERS  
Registers 0, 1, 2, 4, 6, 8, 9 and A contain time of day data in BCD. Ten bits within these eight registers  
are not used and will always read 0 regardless of how they are written. Bits 6 and 7 in the Months  
Register (9) are binary bits.  
When set to logical 0, EOSC (bit 7) enables the real-time clock oscillator. This bit will normally be turned  
on by the user during device initialization. However, the oscillator can be turned on and off as necessary  
by setting this bit to the appropriate level.  
Bit 6 of this same byte controls the square wave output (pin 24). When set to logical 0, the square wave  
output pin will output a 1024 Hz square wave signal. When set to logic 1 the square wave output pin is in  
a high impedance state.  
Bit 6 of the Hours Register is defined as the 12- or 24-Hour Select Bit. When set to logic 1, the 12-hour  
format is selected. In the 12-hour format, bit 5 is the AM/ PM bit with logical one being PM. In the 24-  
hour mode, bit 5 is the second 10-hour bit (20-23 hours). The time of day registers are updated every 0.01  
seconds from the real time clock, except when the TE bit (bit 7 of register B) is set low or the clock  
oscillator is not running.  
The preferred method of synchronizing data access to and from the Watchdog Timekeeper is to access the  
Command Register by doing a write cycle to address location 0B and setting the TE bit (Transfer Enable  
bit) to a logic 0. This will freeze the external time of day registers at the present recorded time allowing  
access to occur without danger of simultaneous update. When the watch registers have been read or  
written a second write cycle to location 0B, setting the TE bit to a logic 1, will put the time of day  
registers back to being updated every 0.01 second. No time is lost in the real time clock because the  
internal copy of the time of day register buffers are continually incremented while the external memory  
registers are frozen. An alternate method of reading and writing the time of day registers is to ignore  
synchronization. However, any single read may give erroneous data as the real time clock may be in the  
process of updating the external memory registers as data is being read.  
The internal copies of seconds through years are incremented and Time of Day Alarm is checked during  
the period that hundredths of seconds reads 99 and are transferred to the external register when  
hundredths of seconds roll from 99 to 00. A way of making sure data is valid is to do multiple reads and  
compare. Writing the registers can also produce erroneous results for the same reasons. A way of making  
sure that the write cycle has caused proper update is to do read verifies and re-execute the write cycle if  
data is not correct. While the possibility of erroneous results from reads and write cycles has been stated,  
it is worth noting that the probability of an incorrect result is kept to a minimum due to the redundant  
structure of the Watchdog Timekeeper.  
8 of 17  
DS1384  
TIME OF DAY ALARM REGISTERS  
Registers 3, 5, and 7 contain the time of day alarm registers. Bits 3, 4, 5, and 6 of register 7 will always  
read 0 regardless of how they are written. Bit 7 of registers 3, 5, and 7 are mask bits (Figure 3). When all  
of the mask bits are logic 0, a time of day alarm will only occur when registers 2, 4, and 6 match the  
values stored in registers 3, 5, and 7. An alarm will be generated every day when bit 7 of register 7 is set  
to a logic 1. Similarly, an alarm is generated every hour when bit 7 of registers 7 and 5 is set to a logic 1.  
When bit 7 of registers 7, 5, and 3 is set to a logic 1, an alarm will occur every minute when register 1  
(seconds) rolls from 59 to 00.  
Time of day alarm registers are written and read in the same format as the time of day registers. The time  
of day alarm flag and interrupt is always cleared when alarm registers are read or written.  
WATCHDOG ALARM REGISTERS  
Registers C and D contain the time for the Watchdog Alarm. The two registers contain a time count from  
00.01 to 99.99 seconds in BCD. The value written into the Watchdog Alarm Registers can be written or  
read in any order. Any access to Register C or D will cause the Watchdog Alarm to reinitialize and clears  
the Watchdog Flag Bit and the Watchdog Interrupt Output. When a new value is entered or the Watchdog  
Registers are read, the Watchdog Timer will start counting down from the entered value to 0. When 0 is  
reached, the Watchdog Interrupt Output will go to the active state. The Watchdog Timer Countdown is  
interrupted and reinitialized back to the entered value every time either of the registers are accessed. In  
this manner, controlled periodic accesses to the Watchdog Timer can prevent the Watchdog Alarm from  
ever going to an active level. If access does not occur, countdown alarm will be repetitive. The  
Watchdog Alarm Registers always read the entered value. The actual count down register is internal and  
is not readable. Writing registers C and D to 0 will disable the Watchdog Alarm feature.  
COMMAND REGISTER  
Address location 0Bh is the Command Register where mask bits, control bits and flag bits reside. The  
operation of each bit is as follows:  
TE - Bit 7 Transfer enable - This bit when set to a logic 0 will disable the transfer of data between  
internal and external clock registers. The contents in the external clock registers are now frozen and reads  
or writes will not be affected with updates. This bit must be set to a logic 1 to allow updates.  
IPSW - Bit 6 Interrupt switch - When set to a logic 1, INTA is the Time of Day Alarm and INTB /(INTB)  
is the Watchdog Alarm. When set to logic 0, this bit reverses the output pins. INTA is now the Watchdog  
Alarm output and INTB /(INTB) is the Time of Day Alarm output.  
IBH/LO - Bit 5 Interrupt B Sink or Source Current -When this bit is set to a logic 1 and VCC is applied,  
INTB /(INTB) will source current (see DC characteristics IOH). When this bit is set to a logic 0, INTB will  
sink current (see DC characteristics IOL).  
PU/LVL - Bit 4 Interrupt pulse mode or level mode - This bit determines whether both interrupts will  
output a pulse or level signal. When set to a logic 0, INTA and INTB /(INTB) will be in the level mode.  
When this bit is set to a logic 1, the pulse mode is selected and INTA will sink current for a minimum of  
3 ms and then release. INTB /(INTB) will either sink or source current, depending on the condition of bit  
5, for a minimum of 3 ms and then release.  
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DS1384  
WAM - Bit 3 Watchdog Alarm Mask - When this bit is set to a logic 0, the Watchdog Interrupt output  
will be activated. The activated state is determined by bits 1,4,5, and 6 of the Command Register. When  
this bit is set to a logic 1, the Watchdog interrupt output is deactivated.  
TDM - Bit 2 Time of Day Alarm Mask - When this bit is set to a logic 0, the Time of Day Alarm  
Interrupt output will be activated. The activated state is determined by bits 0, 4, 5, and 6 of the Command  
Register. When this bit is set to a logic 1, the Time of Day Alarm interrupt output is deactivated.  
WAF - Bit 1 Watchdog Alarm Flag - This bit is set to a logic 1 when a watchdog alarm interrupt occurs.  
This bit is read-only.  
The bit is reset when any of the Watchdog Alarm registers are accessed.  
When the interrupt is in the pulse mode (see bit 4 definition), this flag will be in the logic 1 state only  
during the time the interrupt is active.  
TDF - Bit 0 Time of Day Flag - This is a read-only bit. This bit is set to a logic 1 when a time of day  
alarm has occurred. The time the alarm occurred can be determined by reading the Time of Day Alarm  
registers. This bit is reset to a logic 0 state when any of the Time of Day Alarm registers is accessed.  
When the interrupt is in the pulse mode (see bit 4 definition), this flag will be in the logic 1 state only  
during the time the interrupt is active.  
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DS1384  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-0.3V to +7.0V  
0°C to 70°C  
Storage Temperature  
-20°C to +70°C  
Soldering Temperature  
See J-STD-020A Specification  
This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operation sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods of time may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
(0°C to 70°C)  
PARAMETER  
SYMBOL  
VCC  
MIN  
4.5  
TYP  
MAX  
5.5  
VCC+0.3  
0.8  
UNITS  
NOTES  
Supply Voltage  
V
V
V
V
1
Logic 1 Voltage All Inputs  
Logic 0 Voltage All Inputs  
Battery Input Voltage  
VIH  
VIL  
VBAT  
2.0  
-0.3  
2.4  
4.0V  
DC ELECTRICAL CHARACTERISTICS  
(0°C to 70°C; VCC = 5V ± 10%)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
Average VCC Power  
Supply Current  
ICC1  
7
15  
mA  
2, 3  
TTL Standby Current  
ICC2  
2
1
5
mA  
2, 3  
2, 3  
(CE = VIH)  
CMOS Standby Current  
(CE VCC-0.2V)  
Input Leakage Current  
(any input)  
Output Leakage Current  
Output Logic 1 Voltage  
(IOH = -1.0 mA)  
ICC3  
IIL  
3
mA  
µA  
1
+1  
+1  
IIO  
VOH  
-1  
2.4  
µA  
V
Output Logic 0 Voltage  
(IOH = +2.1 mA)  
Output Voltage  
VOL  
0.4  
V
V
VCCO1  
VCC-  
0.3  
4
Output Current  
Write Protection Voltage  
Output Voltage  
ICCO1  
VPF  
VCCO2  
85  
4.5  
mA  
V
V
4
5
6
4.0  
VBAT  
-0.3  
4.25  
Output Current  
ICCO2  
IBAT1  
IBAT2  
VSO  
100  
500  
100  
µA  
nA  
nA  
V
6
Battery Leakage OSC ON  
Battery Leakage OSC OFF  
Switch Over Voltage  
VBAT1  
,
VBAT2  
11 of 17  
DS1384  
AC ELECTRICAL CHARACTERISTICS  
(0°C to 70°C; VCC = 5.0V ±10%)  
PARAMETER  
SYMBOL  
tRC  
MIN  
TYP  
MAX  
UNITS  
NOTES  
Read Cycle Time  
Address Access Time  
120  
ns  
ns  
ns  
tACC  
120  
120  
tCO  
CE Access Time  
tCEZ  
tOE  
40  
60  
ns  
ns  
CE Data Off Time  
Output Enable Access  
Time  
Output Enable Data  
Off Time  
Output Enable to DQ  
Low-Z  
tOEZ  
tOEL  
tCEL  
40  
ns  
ns  
ns  
5
10  
5
CE to DQ Low-Z  
Output Hold from Address  
tOH  
tCEPD  
ns  
ns  
25  
20  
CE to CEO Low or High  
tOERL  
tRO  
tAOEL  
tAOEH  
ns  
ns  
ns  
ns  
OE Low to OER Low  
A0-A16 > 00040h  
20  
50  
40  
OE High to OER High  
Time  
Address 00040h-1FFFFh  
to OER Low  
Address 00000h-0003Fh to  
OER High  
Write Cycle Time  
Address Setup Time  
tWC  
tAW  
tCEW  
120  
0
120  
ns  
ns  
ns  
CE Pulse Width  
Address Hold from  
End of Write  
tAH  
10  
ns  
Write Pulse Width  
tWP  
tCEZ  
80  
ns  
ns  
40  
40  
CE Data Off Time  
WE Data Off Time  
tWEZ  
tWR  
ns  
ns  
10  
WE or CE Inactive Time  
Data Setup Time  
Data Hold Time High  
tDS  
tDH  
tIPW  
45  
0
3
ns  
ns  
ms  
INTA and INTB Pulse  
Width  
AC TEST CONDITIONS  
Input Levels:  
Transition Times:  
0V to 3V  
5 ns  
12 of 17  
DS1384  
CAPACITANCE  
PARAMETER  
(tA = 25°C)  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
Capacitance on all pins  
(except DQ)  
CI  
7
15  
pF  
Capacitance on DQ pins  
CDQ  
7
15  
pF  
AC ELECTRICAL CHARACTERISTICS  
(0°C to 70°C)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
tPD  
0
µs  
CE at VIH before Power  
Down  
VPF (Max) to VPF (Min)  
VCC Fall Time  
VPF (Min) to VSO VCC Fall  
Time  
tF  
tFB  
tR  
300  
10  
0
µs  
µs  
µs  
VPF (Min) to VPF (Max)  
VCC Rise Time  
Power Up  
Expected Data Retention  
Time (Oscillator On)  
tREC  
tDR  
10  
10  
150  
ms  
years  
7
READ CYCLE TIMING: RTC AND EXTERNAL SRAM CONTROL SIGNALS  
13 of 17  
DS1384  
OER TIMING WHEN SWITCHING BETWEEN LOWER MEMORY (00000h-  
0003Fh) AND UPPER MEMORY (00040h-1FFFFh)  
WRITE CYCLE TIMING: RTC AND EXTERNAL SRAM CONTROL SIGNALS  
14 of 17  
DS1384  
TIMING DIAGRAM: POWER UP  
TIMING DIAGRAM: POWER DOWN  
15 of 17  
DS1384  
TIMING DIAGRAM: INTERRUPT OUTPUTS PULSE MODE (SEE NOTES 8, 9)  
NOTES:  
1. All voltages are referenced to ground.  
2. Typical values are at 25°C and nominal supplies.  
3. Outputs are open.  
4. Value for voltage and currents is from the VCCI input pin to the VCCO pin.  
5. Write protection trip point occurs during power fail prior to switchover from VCC to VBAT  
6. Value for voltage and currents is from the VBAT input pin to the VCCO pin.  
.
7. Data retention time depends on the size of battery selected and the amount of current demanded by  
the static RAM in back-up mode. The battery capacity (mA =hr) to achieve a TDR of 10 years is given  
by the formula: C=(IBAT1 + IRAM) x 24 x 365 x 10, where IRAM is the standby current of the static  
RAM at the battery voltage. For the DS1384 chip alone, a standard 48 mAh lithium cell battery will  
provide greater than 10 years of data retention in the absence of power.  
8. Applies to both interrupt pins when the alarms are set to pulse.  
9. Interrupt output occurs within 100 ns of the alarm condition existing.  
OUTPUT LOAD  
16 of 17  
DS1384  
DS1384 FP PACKAGE OUTLINES  
NOTES:  
1. DIMENSIONS D1 AND E1 INCLUDE  
MOLD MISMATCH, BUT DO NOT  
INCLUDE MOLD PROTRUSION;  
ALLOWABLE PROTRUSION IS 0.25 MM  
PER SIDE.  
2. DETAILS OF PIN 1 IDENTIFIER ARE  
OPTIONAL BUT MUST BE LOCATED  
WITHIN THE ZONE INDICATED.  
3. ALLOWABLE DAMPER PROTRUSION  
IS 0.08 MM TOTAL IN EXCESS OF THE  
B DIMENSION; AT MAXIMUM  
MATERIAL CONDITION. PROTRUSION  
NOT TO BE LOCATED ON LOWER  
RADIUS OF FOOT OF LEAD.  
4. CONTROLLING DIMENSIONS:  
MILLIMETERS.  
PKG  
DIM  
A
A1  
A2  
D
DS1384FP  
MIN MAX  
-
2.45  
0.30  
2.10  
0.10  
1.95  
13.65 14.30  
9.90 10.00  
13.65 14.30  
D1  
E
E1  
L
9.90  
0.63  
10.00  
1.03  
e
0.80 BSC  
B
C
0.30  
0.13  
0.45  
0.23  
56-G3001-001, 56-G4012-001  
17 of 17  

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