ZMM5247 [DAESAN]
0.5W SILICON PLANAR ZENER DIODES; 0.5W硅平面齐纳二极管型号: | ZMM5247 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | 0.5W SILICON PLANAR ZENER DIODES |
文件: | 总3页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
0.5W SILICON PLANAR
ZENER DIODES
ZMM5221 THRU ZMM5262
Features
· Standards Zener voltage tolerance is ±20%.Add suffix "A"
for ±10% tolerance and suffix "B" for ±5% tolerance other
tolerance, non standards and higher zener voltage upon
request.
MELF (DO-35)
· These diode are also available in DO-35 case with type
designation 1N5221 thru 1N5262
SOLDERABLE ENDS
0.020(0.50)
0.011(0.28)
0.063(1.60)
0.146(3.70)
0.051(1.30)
0.130(3.30)
Mechanical Data
· Case : MELF(DO-35) glass case
· Weight : Approx. 0.05 gram
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Limiting Values)
(TA=25℃)
Symbols
Value
Units
Zener current see table "Characteristics"
5001)
175
mW
℃
P
tot
Power dissipation at T
A=75℃
Junction Temperature
T
J
℃
Storage Temperature range
-65 to+175
TSTG
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
(TA=25℃)
Symbols
Min.
Typ.
Max.
Units
3001)
1.1
R
θJA
Thermal resistance junction to ambient
℃/W
VF
Forward voltage at I
F=200mA
V
1) Valid provided that electrodes are kept at ambient temperature
ZMM5221...ZMM5262 SILICON PLANAR ZENER DIODES
Maximum
Regulator
Current2)
Nominal
Typical
Temperature
Coefficient
Test
Current
Maximum zener
impedance1)
Zener
Maximum Reverse Leakage Current
Voltage
Type
at
Iz
at
Iz
ZK Iz
Test-Voltage
Suffix B
at
T
k
=0.25mA
mA
Suffix A
IZM mA
IZT mA
IR μA
αVZ %/K
IzT
VRV
VzV
Z
ZT Ω
Z
T
VRV
ZMM5221
ZMM5222
ZMM5223
ZMM5224
ZMM5225
ZMM5226
ZMM5227
ZMM5228
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
20
20
20
20
20
20
20
20
30
30
30
30
29
28
24
23
1200
1250
1300
1400
1600
1600
1700
1900
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
100
100
75
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
191
182
168
162
152
138
126
115
75
50
25
15
10
ZMM5229
ZMM5230
4.3
4.7
20
20
22
19
2000
1900
-0.055
5
5
0.95
1.9
1.0
2.0
106
97
±0.030
±0.030
+0.038
+0.038
ZMM5231
ZMM5232
ZMM5233
5.1
5.6
6.0
20
20
20
17
11
7
1600
1600
1600
5
5
5
1.9
2.9
3.3
2.0
3.0
3.5
89
81
76
ZMM5234
ZMM5235
6.2
6.8
20
20
7
5
1000
750
+0.045
+0.050
5
3
3.8
4.8
4.0
5.0
73
67
ZMM5236
ZMM5237
ZMM5238
ZMM5239
7.5
8.2
8.7
9.1
20
20
20
20
6
8
500
500
600
600
+0.058
+0.062
+0.065
+0.068
3
3
3
3
5.7
6.2
6.2
6.7
6.0
6.5
6.5
7.0
61
55
52
50
8
10
ZMM5240
ZMM5241
10
11
20
20
17
22
600
600
+0.075
+0.076
3
2
7.6
8.0
8.0
8.4
45
41
ZMM5242
ZMM5243
ZMM5244
12
13
14
20
9.5
9.0
30
13
15
600
600
600
+0.077
+0.079
+0.082
1
8.7
9.4
9.5
9.1
9.9
10
38
35
32
0.5
0.1
ZMM5245
ZMM5246
ZMM5247
ZMM5248
15
16
17
18
8.5
7.8
7.4
7.0
16
17
19
21
600
600
600
600
+0.082
+0.083
+0.084
+0.085
0.1
0.1
0.1
0.1
10.5
11.4
12.4
13.3
11
12
13
14
30
28
27
25
ZMM5249
ZMM5250
ZMM5251
ZMM5252
ZMM5253
ZMM5254
19
20
22
24
25
27
6.6
6.2
5.6
5.2
5.0
4.6
23
25
29
33
35
41
600
600
600
600
600
600
+0.086
+0.086
+0.087
+0.087
+0.089
+0.090
0.1
0.1
0.1
0.1
0.1
0.1
13.3
14.3
16.2
17.1
18.1
20
14
15
17
18
19
21
24
23
21
19.1
18.2
16.8
ZMM5255
ZMM5256
28
30
4.5
4.2
44
49
600
600
+0.091
+0.091
0.1
0.1
20
22
21
23
16.2
15.1
ZMM5257
ZMM5258
33
36
3.8
3.4
58
70
700
700
+0.092
+0.093
0.1
0.1
24
26
25
27
13.8
12.6
ZMM5259
ZMM5260
ZMM5261
ZMM5262
39
43
47
51
3.2
3.0
2.7
2.5
80
93
800
900
+0.094
+0.095
+0.095
+0.096
0.1
0.1
0.1
0.1
29
31
34
37
30
33
36
39
11.6
10.6
9.7
105
125
1000
1100
8.9
1) The zener impedance is derived from the 1kHz AC voltage which results when on AC current having an RMS value equal to 10% of the Zener
current (Iz or Iz ) is superimposed on Iz or Iz Zener impedance is measured at two points to insure a sharp knee on the breakdown curve
and to eliminate unstable units.
T
K
T
K
2) Vaild provided that leads are kept at ambient temperature at a distance of 8mm from case.
3) Measured with device junction in thermal equilibrium.
ZMM5221 THRU ZMM5262 SILICON PLANAR ZENER DIODES
Admissible power dissipation versus ambient temperature
(Valid provided that electrodes are kept at ambient
temperature)
ZMM5221...
mW
500
400
300
200
P
tot
100
0
0
50
100
150
200
250 ℃
T
amb
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