KBJ4K [DAESAN]
CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts; 当前4.0安培电压50到1000伏特
| 型号： | KBJ4K |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 4.0 Amperes VOLTAGE 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 4.0 Amperes
VOLTAGE 50 to 1000 Volts
KBJ4A THRU KBJ4M
Features
P
N
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
A
H
· Surge Overload Rating to 120A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
C
B
L
_
M
K
J
E
R
D
G
Mechanical Data
K B J
Dim
A
Min
Max
Dim
J
Min
3.30
1.50
Max
· Case : Molded Plastic
· Terminals : Plated Leads, Solderable per
MIL-STD-202, Method 208
24.80
14.70
25.20
15.30
3.70
1.90
B
K
L
C
4.00 Nominal
9.30
2.50
3.40
4.40
0.60
9.70
2.90
3.80
4.80
0.80
17.20
0.90
7.30
17.80
1.10
7.70
M
N
P
· Polarity : Molded on Body
D
· Mounting : Through Hole for #6 Screw
· Mounting Torque : 5.0 in-Ibs Maximum
· Approx. Weight : 4.6 grams
E
G
O
/
O
3.40
R
H
3.10
/
All Dimens ions in mm
· Marking : Type Number
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
KBJ
4A
KBJ
4B
KBJ
4D
KBJ
4G
KBJ
4J
KBJ
4K
KBJ
4M
Symbols
Units
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
V
V
V
RMM
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
Volts
R
RMS Reverse voltage
V
R(RMS)
280
4.0
Volts
Average Rectified Output Current @ T
C
=115
Io
Amps
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
I
FSM
120
Amps
V
FM
1.0
Volts
Forward voltage per element
@ IF=2.0 A
@ T
C
C
=25℃
5.0
Peak Reverse Current at Rated
DC Blocking voltage
I
R
μA
@ T
=125℃
500
Typical Junction Capacitance
per element (Note 1)
Cj
40
pF
Typical Thermal Resistance (Note 2)
5.5
℃/W
RθJA
T
STG
j
Operating and Storage Temperature Range
-65 to +150
℃
T
Notes:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
RATINGS AND CHARACTERISTIC CURVES KBJ4A THRU KBJ4M
6
10
5
4
TJ = 150°C
TJ = 25°C
1.0
3
2
1
0.1
Resistive or
Inductive load
Pulse width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6 1.8
VF, INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fig. 2 Typical Forward Characteristics
TC , CASE TEMPERA TURE (°C)
Fig. 1 Forward Current Deratin g Curve
180
160
1000
f = 1MHz
Tj = 25°C
Single half-sine-wave
(JEDEC method)
Tj = 150°C
120
80
100
40
0
10
1
100
10
0.1
1.0
10
100
VR , REVERSE VOL TAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Sur ge Current
Fig. 4 Typical Junction Capacitance
1000
TJ = 150°C
TJ = 125°C
100
10
TJ = 100°C
1.0
0.1
TJ = 25°C
0
20
40
60
80
100
120
140
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fig. 5 Typical Reverse Characteristics
相关型号：
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DACHANG
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