B1S [DAESAN]
CURRENT 0.8 Amperes VOLTAGE 100 to 1000 Volts; 电流0.8安培电压100到1000伏
| 型号： | B1S |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 0.8 Amperes VOLTAGE 100 to 1000 Volts |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 0.8 Amperes
VOLTAGE 100 to 1000 Volts
B1S THRU B10S
Features
· Glass Passivated Die Construction
· Diffused Junction
L
G
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 30A Peak
· Designed for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
A
B
D E
H
C
J
MiniDIP
Min
Dim
A
Max
5.75
4.00
0.35
0.20
7.00
1.10
4.90
2.90
2.70
0.80
K
5.43
Mechanical Data
B
3.60
C
0.15
· Case : Molded Plastic
D
E
0.05
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 2026
· Polarity : As Marked on Case
· Approx. Weight : 0.125 grams
· Mounting Position : Any
G
H
J
0.70
4.50
2.80
2.50
0.50
K
· Marking : Type Number
L
All Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Units
B1S
B2S
B4S
B6S
B8S
B10S
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
V
V
V
RMM
RWM
100
70
200
140
400
280
600
420
800
560
1000
700
Volts
R
RMS Reverse voltage
V
RMS
Volts
Amp
Average Rectified Output Current @ T
A=40
Io
0.8
30
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
Amp
V
FM
1.0
Volts
Forward voltage (per element)
@ IF=0.4 A
@ T
@ T
A
=25℃
10
Peak Reverse Current at Rated
DC Blocking voltage (per element)
IRM
μA
A=125℃
500
Typical Junction Capacitance
per element (Note 1)
C
j
10
75
pF
Typical Thermal Resistance,
Junction to Ambient (Note 2)
℃/W
RθJA
T
STG
j
Operating and Storage Temperature Range
-55 to +150
℃
T
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas.
RATING AND CHARACTERISTIC CURVES B1S THRU B10S
10
0.8
0.6
0.4
1.0
0.1
Ceramic PC Board
0.2
0
Tj = 25
C
Resistive or Inductive Load
Pulse Width = 300
s
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
40
80
120
160
TA, AMBIENT TEMPERA TURE ( C )
Fig. 1 Output Current Deratin g Curve
VF, INST ANT ANEOUS FOR WARD VOLTAGE (V)
Fig. 2 T ypical Forward Characteristics (per leg)
100
35
Tj = 25
C
f = 1.0MHz
30
20
10
10
0
TA = 25
C
Single Half Sine-W ave
Pulse Width = 5.3ms
(JEDEC Method)
1
1
10
100
1.0
10
NUMBER OF CYCLES AT 60 Hz
VR , REVERSE VOL TAGE (V)
Fig. 3 Maximum Peak Forward Sur ge Current (per leg)
Fig. 4 Typical Junction Capacitance
100
Tj = 125
C
10
1.0
0.1
Tj = 25
C
0.01
0
20
40
60
80
100
120 140
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
相关型号：
B1S-T3-LF
Bridge Rectifier Diode, 1 Phase, 0.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MB-S, 4 PIN
WTE
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