1N5401 [DAESAN]
CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts; 当前3.0安培电压50到1000伏特型号: | 1N5401 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts |
文件: | 总2页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
1N5400 THRU 1N5408
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· Construction utilizes void-free molded plastic technique
· High surge current capability
DO-201AD
· 3.0A operation at T
L
=70℃ with no thermal runaway
0.210(5.3)
0.188(4.8)
DIA.
· Typical I
R
less than 0.1μA
1.0(25.4)
MIN.
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5lbs.(2.3kg) tension
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
1.0(25.4)
MIN.
0.042(1.1)
0.037(0.9)
DIA.
· Weight : 0.042 ounce, 0.19 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Units
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
Maximum DC blocking voltage to T
A
=105℃
V
DC
100
1000
Maximum average forward rectified current
Amps
I
(AV)
3.0
200.0
1.1
0.375"(9.5mm) lead length T =105℃
L
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method)
I
FSM
Amps
Volts
μA
Maximum instantaneous forward voltage
at 3.0A
VF
T
A
=25℃
10.0
300.0
20.0
Maximum reverse current
at rated DC blocking voltage
I
R
TA
=100℃
Typical thermal resistance (Note 2)
RθJA
℃/W
pF
CJ
Typical junction capacitance (Note 1)
Maximum DC Blocking Voltage Temperature
35.0
TA
+150.0
℃
TJ
℃
Operating and Storage temperature Range
-50 to +175
T
STG
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted
RATINGS AND CHARACTERISTIC CURVES 1N5400 THRU 1N5408
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL INSTANTANEOUS FORWARD
VOLTAGE.(V)
4
3
100
30
10
2
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.375"(9.5mm) lead length
1
0
3
1
0
25
50
75
100
125
150
175
LEAD TEMPERATURE ( ℃)
0.1
TJ=25℃
PULSE WIDTH=300
μS
1% DUTY CYCLE
0.3
FIG.3-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
200
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
NON-REPETITIVE
50
FIG.4-TYPICAL REVERSE CHARACTERISTICS
REPETITIVE
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1
10
100
NUMBER OF CYCLES AT 60Hz
1.0
0.1
FIG.5-TYPICAL JUNCTION CAPACITANCE
TJ
=25℃
200
100
0.01
0
20
40
60
80
100
120
140
TJ=25℃
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
1
0.1
100
1
10
REVERSE VOLTAGE.VOLTS
相关型号:
1N5401-AP
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
1N5401-B
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
DIODES
1N5401-BC01
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
1N5401-BC01-BP
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
1N5401-BC01-TP
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
1N5401-BC02
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
1N5401-BC02-BP
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
1N5401-BC02-TP
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
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