MTP1013S3 [CYSTEKEC]
-20V P-CHANNEL Enhancement Mode MOSFET; -20V P沟道增强型MOSFET
| 型号： | MTP1013S3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | -20V P-CHANNEL Enhancement Mode MOSFET |
| 文件： | 总8页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 1/ 8
CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET
BVDSS
ID
-20V
-540mA
0.64Ω(typ)
0.68Ω(typ)
1.1Ω(typ)
1.9Ω(typ)
MTP1013S3
RDSON@VGS=-4.5V, ID=-430mA
RDSON@VGS=-4V, ID=-300mA
RDSON@VGS=-2.5V, ID=-300mA
RDSON@VGS=-1.8V, ID=-150mA
Features
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V.
• Compact industrial standard SOT-323 surface mount package.
• Pb-free package.
Equivalent Circuit
Outline
MTP1013S3
SOT-323
D
G：Gate
S
G
S：Source
D：Drain
Ordering Information
Device
Package
Shipping
SOT-23
MTP1013S3-0-T1-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Symbol
VDS
Parameter
Limits
-20
±10
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
ID
IDM
PD
-0.54
-1.5
350
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃ (Note 2)
A
mW
°C/W
°C
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Rth,ja
357
Tj, Tstg
-55~+150
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
-20
-0.5
-
-0.8
0.5
-
-
-
0.64
0.68
1.1
1.9
-
-1.2
-
V
V
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=-10V, ID=-200mA
-
-
-
-
-
-
-
-
±
10
±
IGSS
VGS= 10V, VDS=0
μA
-1
VDS=-20V, VGS=0
IDSS
-10
0.9
0.9
1.4
2.7
VDS=-20V, VGS=0, Tj=55°C
VGS=-4.5V, ID=-430mA
VGS=-4V, ID=-300mA
VGS=-2.5V, ID=-300mA
VGS=-1.8V, ID=-150mA
*RDS(ON)
Ω
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
-
-
-
-
-
-
-
-
-
-
59
21
15
5
6
42
14
1.2
0.38
0.23
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-10V, VGS=0, f=1MHz
VDS=-6V, ID=-500mA, VGS=-4.5V,
Ω
RG=50
nC
VDS=-5V, ID=-250mA, VGS=-4.5V
*Qgs
*Qgd
Source-Drain Diode
*IS
*ISM
*VSD
-
-
-
-
-
-0.54
-1.5
-1.2
A
V
-0.77
VGS=0V, IS=-100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 3/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
2
-VGS=5V, 4.5V,4V
μ
ID=-250 A,
V
GS=0V
1.6
1.2
0.8
0.4
0
-VGS=3.5V
-VGS=3V
-VGS=2.5V
-VGS=2V
0.8
0.6
-VGS=1.8V
-VGS=1.5V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
12
10
8
1.2
Tj=25°C
VGS=0V
1
0.8
0.6
0.4
0.2
-VGS=1.2V
6
-VGS=2.5V
-VGS=4.5V
Tj=150°C
-VGS=1.5V -VGS=1.8V
4
2
0
0
0.3
0.6
0.9
1.2
1.5
0.001
0.01
0.1
1
D
-IDR, Reverse Drain Current (A)
-I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
4
3.6
3.2
2.8
2.4
2
1.8
1.6
1.4
1.2
1
VGS=-4.5V, ID=-500mA
1.6
1.2
0.8
0.4
0
ID=-500mA
ID=-300mA
ID=-10mA
0.8
0.6
0.4
VGS=-2.5V, ID=-300mA
-60
-20
20
60
100
140
180
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
100
10
1
Ciss
μ
ID=-250 A
C
oss
Crss
0.8
0.6
0.4
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
20
5
4
3
2
1
0
VDS=-15V
VDS=-10V
TJ(MAX)=150°C
TA=25°C
θJA
16
12
8
R
=357°C/W
VDS=-5V
4
ID=-250mA
0
0
0.2 0.4
0.6
0.8
1
1.2 1.4
1.6
0.001
0.01
0.1
1
10
100
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
10
1
0.6
0.5
0.4
0.3
0.2
0.1
0
μ
100 s
1ms
10ms
0.1
100m
DC
TA=25°C, Tj=150°C,
θ
GS=-4.5V, R JA=357°C/W
0.01
0.001
V
Single Pulse
TA=25°C, VGS=-4.5V, RθJA=357°C/W
0.01
0.1
1
10
100
25
50
75
100
125
150
175
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
0.35
0.3
1200
1000
800
600
400
200
0
-VDS=5V
TJ= -40°C, 0°C, 25°C
0.25
0.2
0.15
0.1
150°C
0.5
0.05
0
0
20
40
60
80 100 120 140 160
0
1
1.5
2
2.5
3
-VGS, Gate-Source Voltage(V)
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
1
D=0.5
0.2
JA
1.Rθ (t)=r(t)*RθJA
0.1
0.1
2.Duty Factor, D=t1/t2
0.05
JM
A
DM
3.T -T =P *Zθ (t)
JA
=357
4.RθJA
°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-02
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 6/ 8
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 7/ 8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 8/ 8
CYStech Electronics Corp.
SOT-323 Dimension
Marking:
TW
Date Code
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
Max.
Max.
0.043
0.004
0.039
0.016
0.006
0.087
0.053
Min.
Max.
Min.
Max.
A
A1
A2
b
0.900
0.000
0.900
0.200
0.080
2.000
1.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
0.035
0.000
0.035
0.008
0.003
0.079
0.045
E1
e
e1
L
L1
θ
2.150
2.450
0.085
0.096
0.650 TYP
0.026 TYP
1.200
1.400
0.047
0.055
0.525 REF
0.021 REF
c
D
E
0.260
0.460
0.010
0.018
0°
8°
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP1013S3
CYStek Product Specification
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