DTC123YS3_16 [CYSTEKEC]
NPN Digital Transistors (Built-in Resistors);型号: | DTC123YS3_16 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | NPN Digital Transistors (Built-in Resistors) |
文件: | 总6页 (文件大小:277K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 1/6
NPN Digital Transistors (Built-in Resistors)
DTC123YS3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA123YS3
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-323
DTC123YS3
R1=2.2kΩ , R2=10 kΩ
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
Ordering Information
Device
Package
SOT-323
Shipping
3000 pcs / Tape & Reel
DTC123YS3-0-T1-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC123YS3
CYStek Product Specification
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Vcc
Vin
Limits
Unit
V
V
mA
mA
mW
°C/W
°C
Supply Voltage
Input Voltage
50
-5~+12
100
100
200
625
-55~+150
-55~+150
Io
Output Current
Io(max.)
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
RθJA
Tj
Tstg
°C
Electrical Characteristics (Ta=25℃)
Parameter
Input Voltage
Symbol Min. Typ. Max. Unit
Test Conditions
Vi(off)
Vi(on)
Vo(on)
Ii
Io(off)
Gi
-
3
-
-
-
-
-
0.3
-
0.3
3.8
0.5
-
V
V
V
Vcc=5V, Io=100uA
Vo=0.2V, Io=5mA
Io/Ii=10mA/0.5mA
Output Voltage
Input Current
0.1
-
-
-
mA Vi=5V
μA
-
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Vcc=50V, Vi=0V
Vo=5V, Io=5mA
33
R1
R2/R1
fT
1.54 2.2 2.86
-
-
kΩ
-
3.6
-
4.5
250
5.5
-
MHz VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
Recommended Soldering Footprint
DTC123YS3
CYStek Product Specification
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 3/6
Typical Characteristics
DC Current Gain vs Output Current
Output Voltage vs Output Current
1000
100
10
1000
100
10
1
Vo=5V
Io/Ii=20
1
10
100
1
10
Output Current ---Io(mA)
100
Output Current ---Io(mA)
Input Voltage vs Output Current (ON
Characteristics)
Output Current vs Input Voltage (OFF
Characteristics)
100
10
1
10
Vo=0.3V
Vcc=5V
1
0.1
0.1
0.1
1
10
100
0.1
1
10
Output Current --- Io(mA)
Input Voltage --- Vi(off)(V)
Power Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTC123YS3
CYStek Product Specification
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC123YS3
CYStek Product Specification
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC123YS3
CYStek Product Specification
Spec. No. : C362S3
Issued Date : 2016.05.20
Revised Date :
CYStech Electronics Corp.
Page No. : 6/6
SOT-323 Dimension
3
Marking:
A
Q
C
A1
8Y
Lp
1
2
detail Z
bp
e1
W
B
e
Device Code
Date Code
A
E
Z
D
θ
v
A
He
3-Lead SOT-323 Plastic
mm
2
0
1
Surface Mounted Package
CYStek Package Code: S3
scale
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min. Max.
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
0.80
0.00
0.20
0.08
1.80
1.15
1.20
Max.
1.10
0.10
0.40
0.15
2.20
1.35
1.40
Min.
Max.
A
A1
bp
C
D
E
0.0315 0.0433
0.0000 0.0039
0.0078 0.0157
0.0031 0.0059
0.0709 0.0866
0.0453 0.0531
0.0472 0.0551
e1
He
Lp
Q
v
w
0.0256*
0.65*
0.0846 0.0965
0.0105 0.0181
0.0051 0.0091
2.15
0.26
0.13
0.2
2.45
0.46
0.23
-
0.0079
0.0079
0°
-
-
8°
0.2
-
e
θ
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC123YS3
CYStek Product Specification
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