BTB1580SM3-0-T2-G [CYSTEKEC]
PNP Epitaxial Planar Transistor;
| 型号： | BTB1580SM3-0-T2-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | PNP Epitaxial Planar Transistor |
| 文件： | 总8页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 1/8
CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
BTB1580SM3
Description
The BTB1580SM3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
Outline
BTB1580SM3
SOT-89
≒4K
B C E
B：Base
C：Collector
E：Emitter
Ordering Information
Device
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
BTB1580SM3-0-T2-G
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
-120
-120
-5
-4
A
ICP
-6 (Note 1)
208
125 (Note 2)
62.5 (Note 3)
85 (Note 4)
43
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation
RθJA
RθJC
°C/W
0.7
1.2 (Note 2)
2.4 (Note 3)
1.8 (Note 4)
3.5
PD
W
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
Tj
Tstg
-55~+175
-55~+175
°C
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
-120
-120
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA
μA
mA
V
V
-
-
pF
IC=-1mA, IB=0
IC=-100μA, IE=0
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
VCE=-4V, IC=-2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
VCB=-10V, IE=0A, f=1MHz
-100
-1
-2
-1.8
-2.2
-
1000
1000
-
-
-
-
200
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 3/8
CYStech Electronics Corp.
Recommended soldering footprint
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Current Gain vs Collector Current
10000
1000
100
10
10000
25°C
85°C
25°C
140°C
1000
85°C
140°C
100
0
°C
0
°C
-40
10
1
°
-40
°
VCE=-3V
VCE=-4V
1
1
10
100
1000
10000
1
10
100
1000
10000
,
-IC Collector Current(mA)
-IC, Collector Current(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
1000
100
0°C
-40°C
0°C
-40°C
1000
140°
8
25°C
5°
85°C
140°C
25°C
VCESAT@IC=500IB
VCESAT@IC=250IB
100
10
100
1000
10000
10
100 1000
-IC, Collector Current(mA)
10000
-IC, Collector Current(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
10000
1000
100
-40°C
-40°C
0°C
0°C
25°C
25°C
85°C
85°C
140°C
VBESAT@IC=250IB
VBEON@VCE=-4V
140°C
10
100 1000
-IC, Collector Current(mA)
10000
1
10
100
-IC, Collector Current(mA)
1000
10000
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse-Biased Voltage
Built-in Diode Characteristics
100
10000
1000
100
Cib
-40°C
0°C
25°C
85°C
140°C
Cob
10
0.1
1 10
Reverse-Biased Voltage(V)
100
1
10
100
1000
10000
R
V ,
-IF, Forward Current(mA)
Power Derating Curves
Power Derating Curve
3
2.5
2
4
3.5
See
Note 3 on page 2
3
2.5
2
See Note 4 on page 2
See Note 2 on page 2
1.5
1
1.5
1
0.5
0
0.5
0
0
25
50
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TA, Ambient Temperature(℃)
TC, Case Temeprature(℃)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
7
6
5
4
3
2
1
0
6
5
4
3
2
1
IB=-20mA
IB=-50mA
IB=-10mA
IB=-6mA
IB=-4mA
IB=-2mA
IB=-25mA
IB=-10mA
IB=-5mA
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
,
,
-VCE Collector-to-Emitter Voltage(V)
-VCE Collector-to-Emitter Voltage(V)
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 6/8
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 7/8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
BTB1580SM3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 8/8
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
month code: 1~9,
A,B,C
A
Year code :
6→2006,
7→2007,…
2
1
3
Product
Code
H
C
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Inches
Millimeters
Inches
Min. Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min. Max.
1.50 TYP
3.00 TYP
DIM
DIM
Min.
Max.
Min.
4.40
3.94
Max.
4.60
4.25
A
B
C
D
E
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
F
G
H
I
1.55 REF
1.40
0.35
1.60
0.44
2.30
0.32
2.60
0.52
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1580SM3
CYStek Product Specification
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