BSS84S6R [CYSTEKEC]

Dual P-Channel MOSFET; 双P沟道MOSFET
BSS84S6R
型号: BSS84S6R
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

Dual P-Channel MOSFET
双P沟道MOSFET

文件: 总8页 (文件大小:305K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/ 8  
Dual P-Channel MOSFET  
BVDSS  
ID  
-50V  
-170mA  
BSS84S6R  
RDSON@VGS=-10V, ID=-100mA  
RDSON@VGS=-5V, ID=-100mA  
RDSON@VGS=-3V, ID=-30mA  
5Ω (typ)  
6Ω (typ)  
8Ω (typ)  
Features  
• Low on-resistance  
• High ESD capability  
• High speed switching  
• Low-voltage drive(-2.5V)  
• Pb-free package  
Equivalent Circuit  
Outline  
BSS84S6R  
SOT-363R  
Tr1  
Tr2  
The following characteristics apply to both Tr1 and Tr2  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
VDS  
Limits  
-50  
±20  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
-170  
-120  
-800  
Continuous Drain Current @ TA=25°C, VGS=-5V (Note 3)  
Continuous Drain Current @ TA=85°C, VGS=-5V (Note 3)  
Pulsed Drain Current (Notes 1, 2)  
ID  
mA  
mA  
IDM  
TA=25℃  
300  
Maximum Power Dissipation  
(Note 3)  
PD  
mW  
TA=85℃  
160  
Operating Junction and Storage Temperature  
Tj, Tstg  
-55~+150  
°C  
Note : 1. Pulse width limited by maximum junction temperature.  
2. Pulse width300μs, duty cycle2%.  
3.Surface mounted on 1 in² copper pad of FR-4 board, t5s.  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/ 8  
Thermal Performance  
Parameter  
Symbol  
Limit  
415  
Unit  
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)  
Rth,ja  
°C/W  
Note : Surface mounted on 1 in² copper pad of FR-4 board, t5s.  
Electrical Characteristics (Tj=25°C, unless otherwise noted)  
Symbol  
Static  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVDSS  
VGS(th)  
IGSS  
-50  
-1  
-
-
-
-
-
-
-
-2  
V
V
VGS=0, ID=-250μA  
VDS=VGS, ID=-250μA  
-1.4  
-
-
-
5
±
8
±
VGS= 20V, VDS=0  
μA  
1
10  
7
VDS=50V, VGS=0  
IDSS  
VDS=40V, VGS=0 (Tj=70°C)  
VGS=-10V, ID=-100mA  
VGS=-5V, ID=-100mA  
6
8.5  
*RDS(ON)  
Ω
-
8
-
12  
-
VGS=-3V, ID=-30mA  
*GFS  
Dynamic  
80  
mS  
VDS=-10V, ID=-100mA  
Ciss  
Coss  
Crss  
td(ON)  
-
-
-
-
-
-
-
-
-
-
24  
4.6  
1.5  
2.7  
3.3  
7.4  
5
1.4  
0.36  
0.29  
-
-
-
-
-
-
-
-
-
-
pF  
ns  
VDS=-25V, VGS=0, f=1MHz  
VDS=-25V, ID=-100mA, VGS=-5V,  
tr  
Ω
RG=3.3  
td(OFF)  
tf  
Qg  
Qgs  
Qgd  
nC  
V
VDS=-40V, ID=-170mA, VGS=-5V  
Source-Drain Diode  
*VSD  
-
-0.85  
-1.2  
VGS=0V, IS=-130mA  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
Ordering Information  
Device  
Package  
SOT-363  
Shipping  
BSS84S6R-0-T1-G  
3000 pcs / Tape & Reel  
(Pb-free lead plating and halogen-free package)  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/ 8  
Typical Characteristics  
Brekdown Voltage vs Ambient Temperature  
Typical Output Characteristics  
1.4  
1.2  
1
600  
500  
400  
300  
200  
100  
0
-VGS=5V  
μ
ID=-250 A,  
V
GS=0V  
-VGS=4.5V  
-VGS=4V  
-VGS=3.5V  
-VGS=3V  
0.8  
0.6  
-VGS=2.5V  
-VGS=2V  
-75 -50 -25  
0
25 50 75 100 125 150 175  
0
1
2
3
4
5
6
7
8
9
10  
-VDS, Drain-Source Voltage(V)  
Tj, Junction Temperature(°C)  
Static Drain-Source On-State resistance vs Drain Current  
Reverse Drain Current vs Source-Drain Voltage  
12  
11  
10  
9
1.2  
VGS=0V  
Tj=25°C  
1
0.8  
0.6  
0.4  
0.2  
-VGS=3V  
8
Tj=150°C  
-VGS=5V  
7
6
5
-VGS=10V  
4
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.001  
0.01  
0.1  
1
D
-IDR, Reverse Drain Current (A)  
-I , Drain Current(A)  
Drain-Source On-State Resistance vs Junction Tempearture  
Static Drain-Source On-State Resistance vs Gate-Source  
Voltage  
2
1.8  
1.6  
1.4  
1.2  
1
20  
18  
16  
14  
12  
10  
8
VGS=-5V, ID=-100mA  
ID=-100mA  
ID=-30mA  
6
0.8  
0.6  
0.4  
4
VGS=-10V, ID=-100mA  
2
0
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
-VGS, Gate-Source Voltage(V)  
Tj, Junction Temperature(°C)  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/ 8  
Typical Characteristics(Cont.)  
Threshold Voltage vs Junction Tempearture  
Capacitance vs Drain-to-Source Voltage  
1.6  
1.4  
1.2  
1
100  
10  
1
μ
ID=-250 A  
Ciss  
C
oss  
0.8  
0.6  
0.4  
Crss  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
0.1  
1
10  
100  
-VDS, Drain-Source Voltage(V)  
Tj, Junction Temperature(°C)  
Single Pulse Power Rating, Junction to Ambient  
(Note on page 1)  
Gate Charge Characteristics  
10  
10  
VDS=-40V  
ID=-170mA  
TJ(MAX)=150°C  
TA=25°C  
θJA  
8
6
4
2
0
8
6
4
2
0
R
=415°C/W  
0
0.6  
1.2  
1.8  
2.4  
3
3.6  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width(s)  
Qg, Total Gate Charge(nC)  
Maximum Safe Operating Area  
Maximum Drain Current vs JunctionTemperature  
1
0.1  
0.2  
0.18  
0.16  
0.14  
0.12  
0.1  
μ
100 s  
RDS(ON)  
Limited  
1ms  
10ms  
100ms  
0.08  
0.06  
0.04  
0.02  
0
1s  
0.01  
TA=25°C, Tj=150°C,  
θ
GS=-5V, R JA=415°C/W  
DC  
V
Single Pulse  
θJA  
TA=25°C, VGS=-5V, R =415°C/W  
0.001  
0.01  
0.1  
1
10  
100  
25  
50  
75  
100  
125  
150  
175  
-VDS, Drain-Source Voltage(V)  
Tj, Junction Temperature(°C)  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/ 8  
Typical Characteristics(Cont.)  
Power Derating Curves  
Typical Transfer Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
0.4  
0.3  
0.2  
0.1  
0
-VDS=10V  
Single  
Dual  
Mounted on FR-4 board  
with 1 in² pad area  
0
0
20  
40  
60  
80 100 120 140 160  
0
1
2
3
4
5
6
TA, Ambient Temperature(℃)  
-VGS, Gate-Source Voltage(V)  
Transient Thermal Response Curves  
1
D=0.5  
0.2  
0.1  
1.RθJA(t)=r(t)*RθJA  
0.1  
1
2
2.Duty Factor, D=t /t  
3.TJM-TC=PDM*ZθJC(t)  
=415  
0.05  
4.RθJA  
°C/W  
0.02  
0.01  
0.01  
0.001  
Single Pulse  
1.E-02  
1.E-04  
1.E-03  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
1.E+03  
t1, Square Wave Pulse Duration(s)  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/ 8  
Reel Dimension  
Carrier Tape Dimension  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 7/ 8  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
240 +0/-5 °C  
217°C  
60-150 seconds  
260 +0/-5 °C  
Peak Temperature(TP)  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 °C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
BSS84S6R  
CYStek Product Specification  
Spec. No. : C465S6R  
Issued Date : 2012.12.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 8/ 8  
SOT-363 Dimension  
Marking:  
Date  
Code  
PD  
6-Lead SOT-363R Plastic  
Surface Mounted Package  
CYStek Package Code: S6R  
Style:  
Pin 1. Source1 (S1)  
Pin 2. Gate1 (G1)  
Pin 3. Drain2 (D2)  
Pin 4. Source2 (S2)  
Pin 5. Gate2 (G2)  
Pin 6. Drain1 (D1)  
Millimeters  
DIM  
Inches  
Min.  
Millimeters  
Inches  
DIM  
Min.  
Max.  
1.100  
0.100  
1.000  
0.350  
0.150  
2.200  
1.350  
Max.  
0.043  
0.004  
0.039  
0.014  
0.006  
0.087  
0.053  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
0.900  
0.000  
0.900  
0.150  
0.080  
2.000  
1.150  
0.035  
0.000  
0.035  
0.006  
0.003  
0.079  
0.045  
E1  
e
e1  
L
L1  
θ
2.150  
2.450  
0.085  
0.096  
0.650 TYP  
0.026 TYP  
1.200  
1.400  
0.047  
0.055  
0.525 REF  
0.021 REF  
c
D
0.260  
0.460  
0.010  
0.018  
0°  
8°  
0°  
8°  
E
Notes : 1.Controlling dimension : millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material :  
Lead : Pure tin plated.  
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BSS84S6R  
CYStek Product Specification  

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