BSS84S6R [CYSTEKEC]
Dual P-Channel MOSFET; 双P沟道MOSFET型号: | BSS84S6R |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | Dual P-Channel MOSFET |
文件: | 总8页 (文件大小:305K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 8
Dual P-Channel MOSFET
BVDSS
ID
-50V
-170mA
BSS84S6R
RDSON@VGS=-10V, ID=-100mA
RDSON@VGS=-5V, ID=-100mA
RDSON@VGS=-3V, ID=-30mA
5Ω (typ)
6Ω (typ)
8Ω (typ)
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(-2.5V)
• Pb-free package
Equivalent Circuit
Outline
BSS84S6R
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
-50
±20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
-170
-120
-800
Continuous Drain Current @ TA=25°C, VGS=-5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=-5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
ID
mA
mA
IDM
TA=25℃
300
Maximum Power Dissipation
(Note 3)
PD
mW
TA=85℃
160
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 8
Thermal Performance
Parameter
Symbol
Limit
415
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Rth,ja
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
-50
-1
-
-
-
-
-
-
-
-2
V
V
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
-1.4
-
-
-
5
±
8
±
VGS= 20V, VDS=0
μA
1
10
7
VDS=50V, VGS=0
IDSS
VDS=40V, VGS=0 (Tj=70°C)
VGS=-10V, ID=-100mA
VGS=-5V, ID=-100mA
6
8.5
*RDS(ON)
Ω
-
8
-
12
-
VGS=-3V, ID=-30mA
*GFS
Dynamic
80
mS
VDS=-10V, ID=-100mA
Ciss
Coss
Crss
td(ON)
-
-
-
-
-
-
-
-
-
-
24
4.6
1.5
2.7
3.3
7.4
5
1.4
0.36
0.29
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-25V, VGS=0, f=1MHz
VDS=-25V, ID=-100mA, VGS=-5V,
tr
Ω
RG=3.3
td(OFF)
tf
Qg
Qgs
Qgd
nC
V
VDS=-40V, ID=-170mA, VGS=-5V
Source-Drain Diode
*VSD
-
-0.85
-1.2
VGS=0V, IS=-130mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
SOT-363
Shipping
BSS84S6R-0-T1-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
600
500
400
300
200
100
0
-VGS=5V
μ
ID=-250 A,
V
GS=0V
-VGS=4.5V
-VGS=4V
-VGS=3.5V
-VGS=3V
0.8
0.6
-VGS=2.5V
-VGS=2V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
12
11
10
9
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
-VGS=3V
8
Tj=150°C
-VGS=5V
7
6
5
-VGS=10V
4
0
0.1
0.2
0.3
0.4
0.5
0.001
0.01
0.1
1
D
-IDR, Reverse Drain Current (A)
-I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
1.8
1.6
1.4
1.2
1
20
18
16
14
12
10
8
VGS=-5V, ID=-100mA
ID=-100mA
ID=-30mA
6
0.8
0.6
0.4
4
VGS=-10V, ID=-100mA
2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
100
10
1
μ
ID=-250 A
Ciss
C
oss
0.8
0.6
0.4
Crss
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 1)
Gate Charge Characteristics
10
10
VDS=-40V
ID=-170mA
TJ(MAX)=150°C
TA=25°C
θJA
8
6
4
2
0
8
6
4
2
0
R
=415°C/W
0
0.6
1.2
1.8
2.4
3
3.6
0.001
0.01
0.1
1
10
100
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
1
0.1
0.2
0.18
0.16
0.14
0.12
0.1
μ
100 s
RDS(ON)
Limited
1ms
10ms
100ms
0.08
0.06
0.04
0.02
0
1s
0.01
TA=25°C, Tj=150°C,
θ
GS=-5V, R JA=415°C/W
DC
V
Single Pulse
θJA
TA=25°C, VGS=-5V, R =415°C/W
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
175
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 8
Typical Characteristics(Cont.)
Power Derating Curves
Typical Transfer Characteristics
500
450
400
350
300
250
200
150
100
50
0.4
0.3
0.2
0.1
0
-VDS=10V
Single
Dual
Mounted on FR-4 board
with 1 in² pad area
0
0
20
40
60
80 100 120 140 160
0
1
2
3
4
5
6
TA, Ambient Temperature(℃)
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
0.1
1
2
2.Duty Factor, D=t /t
3.TJM-TC=PDM*ZθJC(t)
=415
0.05
4.RθJA
°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-02
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BSS84S6R
CYStek Product Specification
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 8
SOT-363 Dimension
Marking:
Date
Code
PD
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
Max.
1.100
0.100
1.000
0.350
0.150
2.200
1.350
Max.
0.043
0.004
0.039
0.014
0.006
0.087
0.053
Min.
Max.
Min.
Max.
A
A1
A2
b
0.900
0.000
0.900
0.150
0.080
2.000
1.150
0.035
0.000
0.035
0.006
0.003
0.079
0.045
E1
e
e1
L
L1
θ
2.150
2.450
0.085
0.096
0.650 TYP
0.026 TYP
1.200
1.400
0.047
0.055
0.525 REF
0.021 REF
c
D
0.260
0.460
0.010
0.018
0°
8°
0°
8°
E
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BSS84S6R
CYStek Product Specification
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