CYM74P435BPM-50C [CYPRESS]

Cache SRAM Module, 128KX32, 13.5ns, CMOS;
CYM74P435BPM-50C
型号: CYM74P435BPM-50C
厂家: CYPRESS    CYPRESS
描述:

Cache SRAM Module, 128KX32, 13.5ns, CMOS

静态存储器 内存集成电路
文件: 总7页 (文件大小:555K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1CY M74 P43 4B/4 35B  
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Intel™ 82430FX, HX, VX PCIset  
Pipelined L2 Cache Modules  
The CYM74P430B/431B/434B/435B modules are based on  
industry standard 32Kx32 synchronous pipelined BSRAM.  
Features  
Secondary cache modules that are ideal for the Intel  
The CYM74P430B (256-Kbyte) and CYM74P431B  
(512-Kbyte) are high performance modules compatible with all  
three chipsets.  
82430FX, 82430HX, and 82430VX chip sets  
Complies with Intel COAST 3.0 cache module specifi-  
cations  
High-performance cache modules based on synchro-  
nous pipelined 32Kx32 data BSRAM  
All modules contain series damping resistors on the  
data lines to improve system signal quality  
Operates at 50, 60, and 66 MHz  
160-position connector is compatible with all four Key-  
ing Options defined in COAST 3.0.  
3.3V compatible inputs/data outputs  
The CYM74P434B (256-Kbyte) and CYM74P435B  
(512-Kbyte) are high performance modules with extended  
cacheability for systems based on the 82430HX chipset.  
Multiple ground pins and on-board decoupling capacitors en-  
sure high performance with maximum noise immunity. All  
modules have series damping resistors on the data lines.  
All components on the cache modules are surface mounted  
on a multi-layer epoxy laminate (FR-4) substrate. The contact  
pins are plated with 150 micro-inches of nickel covered by 30  
micro-inches of gold.  
Functional Description  
The cache modules are designed for Intel P54C/P55C sys-  
tems with the 82430FX, 82430HX, and 82430VX chip sets.  
Logic Block Diagram  
PD  
PD  
PD  
PD  
0
3
2
1
Note:The tag rams are 8Kx8 for CYM74P430B/434B  
CYM74P430B/434B  
CYM74P431B/435B  
NC  
GND NC  
GND NC  
NC  
and 32Kx8 for CYM74P431B/435B  
WE  
GND GND  
[1]  
Extended cache ability only CYM74P434B/435B  
CYM74P430B/434BA  
CYM74P431B/435BA  
A
D
D
TIO  
10:8  
17:3  
18:3  
2:0  
7:0  
CE  
CYM74P430B/434BECS  
CYM74P431B/435BNC  
ECS  
2
1
TWE  
WE  
A
TIO  
7:0  
CYM74P430B/434BECS  
CYM74P431B/435BGND  
1
CE  
CYM74P431B/435B ONLY  
CK CK  
D
63:0  
CLK  
1
CLK  
0
CK  
CK  
D
D
31:0  
D
31:0  
D
63:32  
D
31:0  
D
31:0  
D
31:0  
D
63:32  
31:0  
A
17:3  
A
14:0  
A
14:0  
A
14:0  
A
14:0  
CWE  
CWE  
CWE  
CWE  
7:4  
3:0  
7:4  
3:0  
CWE  
BW  
BW  
BW  
BW  
3:0  
7:0  
3:0  
3:0  
3:0  
ADSP  
ADSC  
ADV  
ADSP  
ADSC  
ADV  
ADSP  
ADSC  
ADV  
ADSP  
ADSC  
ADV  
ADSP  
ADSC  
ADV  
CCS  
CS  
CS  
CS  
CS  
1
1
1
1
COE  
GWE  
BWE  
OE  
OE  
OE  
OE  
GWE  
BWE  
GWE  
BWE  
GWE  
BWE  
GWE  
BWE  
CYM74P430B/434BECS  
CS  
CS  
GND  
CS  
CS  
2
1
2
2
2
CYM74P431B/435BA  
18  
MODE  
CS  
MODE  
CS  
MODE  
CS  
MODE  
CS  
BOSEL  
V
A
18  
CC3  
2
2
2
2
32Kx32  
Note:All modules have series damping resistors on each data line between the SRAM and the module connector  
Intel is a trademark of Intel Corporation.  
32Kx32  
32Kx32  
32Kx32  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
December 1995 – Revised June 1996  
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Selection Guide  
Synchronous Pipelined Cache Modules  
Part Number  
74P430B50  
74P430B60  
256 KB  
60  
74P430B66  
74P431B50  
74P431B60  
74P431B66  
Cache Size  
512 KB  
System Clock  
(MHz)  
50  
66  
50  
60  
66  
Data SRAM t  
w/0 pF loading  
13.5 ns  
20 ns  
10 ns  
15 ns  
8.5 ns  
15 ns  
13.5 ns  
20 ns  
10 ns  
15 ns  
8.5 ns  
15 ns  
CO  
Tag SRAM t  
AA  
Synchronous Pipelined Cache Modules  
with Extended Cacheability  
Part Number  
74P434B50  
74P434B60  
256 KB  
60  
74P434B66  
74P435B50  
74P435B60  
74P435B66  
Cache Size  
512 KB  
System Clock  
(MHz)  
50  
66  
50  
60  
66  
Data SRAM t  
w/0 pF loading  
13.5 ns  
20 ns  
10 ns  
15 ns  
8.5 ns  
15 ns  
13.5 ns  
20 ns  
10 ns  
15 ns  
8.5 ns  
15 ns  
CO  
Tag SRAM t  
AA  
2
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Pin Configuration  
Dual Read–Out SIMM (DIMM)  
Top View  
GND  
TIO1  
TIO7  
TIO5  
GND  
TIO0  
TIO2  
TIO6  
TIO4  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
1
2
3
4
5
6
7
8
9
TIO3  
[1]  
[1]  
[1]  
(CYM74P434B,CYM74P435B)TIO9  
TIO8 (CYM74P434B,CYM74P435B)  
VCC5  
VCC3  
TWE  
ADSC  
GND  
CWE4  
CWE6  
CWE0  
(CYM74P434B,CYM74P435B)TIO10  
ADV  
GND  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
COE  
CWE5  
CWE7  
CWE1  
VCC5  
CWE3  
NC  
NC  
CWE2  
VCC3  
CCS  
GWE  
BWE  
GND  
A3  
97  
98  
99  
GND  
RSVD  
A4  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
A7  
A6  
A5  
A8  
A11  
A10  
A16  
VCC5  
A17  
GND  
A9  
A14  
A15  
RSVD  
PD0  
PD2  
BOSEL  
GND  
CLK0  
GND  
D63  
VCC5  
D61  
VCC3  
A18 (CYM74P431B,CYM74P435B)  
GND  
A12  
A13  
ADSP  
ECS1  
ECS2  
PD1  
PD3  
GND  
[2]  
CLK1 (CYM74P431B,CYM74P435B)  
GND  
D62  
VCC3  
D60  
D58  
D56  
117  
118  
119  
120  
121  
122  
D59  
D57  
GND  
D55  
D53  
D51  
D49  
GND  
D47  
D45  
D43  
VCC5  
D41  
D39  
D37  
GND  
D35  
D33  
D31  
VCC  
D29  
D27  
D25  
GND  
D54  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
D52  
D50  
D48  
GND  
D46  
D44  
D42  
VCC3  
D40  
D38  
D36  
GND  
D34  
D32  
D30  
VCC3  
D28  
D26  
D24  
GND  
D22  
D20  
D18  
VCC3  
D16  
D14  
D12  
GND  
D10  
D8  
GND  
D23  
D21  
D19  
VCC5  
D17  
D15  
D13  
GND  
D11  
Notes:  
1. For the CYM74P434B and CYM74P435B  
TIO8 and TIO9 are pulled up on the mod-  
ule through a 8.2Kresistor. TIO10 is  
pulled to ground on the module through  
an 8.2Kresisitor.  
2. BOSEL is pulled up through a 4.7Kresistor  
on the module for backward compatible opera-  
tion in systems not supporting BOSEL opera-  
tion.  
D9  
D7  
D6  
VCC3  
D4  
D2  
D0  
VCC5  
D
5
157  
158  
159  
160  
77  
78  
79  
80  
D3  
D1  
GND  
GND  
3
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Pin Definitions  
Common Signals  
Description  
V
V
5V Supply  
CC5  
CC3  
3.3V Supply  
GND  
Ground  
A
Addresses from processor  
Output Enable  
18:3  
COE  
CWE  
BWE  
GWE  
Byte Write Selects  
Byte Write Enable  
Global Write Enable  
Data lines from processor  
Tag data bits  
7:0  
D
63:0  
TIO  
TIO  
7:0  
10:8  
Extended cacheability tag data bits for CYM74P434B or CYM74P435B  
Tag Write Enable signal  
TWE  
ADSP  
ADSC  
ADV  
Processor Address Strobe  
Cache Controller Address Strobe  
Burst Address Advance  
CCS  
Cache Chip Select  
ECS  
ECS  
256-Kbyte Expansion Chip Select input pin (CYM74P430B or CYM74P434B)  
256-Kbyte Expansion Chip Select output pin (CYM74P430B or CYM74P434B)  
1
2
CLK  
Clock signals, CLK is not used on CYM74P430B or CYM74P434B  
1:0  
1
PD  
Presence Detect output pins  
3:0  
BOSEL  
Burst Order Select. When LOW, linear burst sequence is selected. When HIGH, inter-  
leaved burst sequence is selected. If not driven (a no-connect on the motherboard) a  
pull-up resistor on the module will default to interleaved burst sequence.  
RSVD  
NC  
Reserved.  
Signal not connected on module.  
Presence Detect Pins  
PD  
PD  
PD  
PD  
0
3
2
1
CYM74P430B, CYM74P434B  
CYM74P431B, CYM74P435B  
NC  
GND  
NC  
NC  
NC  
GND  
GND  
GND  
4
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
DC Voltage Applied to Outputs  
in High Z State................................................–0.5V to +4.6V  
DC Input Voltage ............................................–0.5V to +4.6V  
Output Current into Outputs (LOW)............................. 20 mA  
Maximum Ratings  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Storage Temperature .................................. –55°C to +125°C  
Operating Range  
Ambient Temperature  
with Power Applied ......................................... –0°C to +70°C  
Ambient  
Temperature  
Range  
V
V
CC3  
CC5  
3.3V Supply Voltage to Ground Potential....... –0.5V to +4.6V  
5V Supply Voltage to Ground Potential.......... –0.5V to +7.0V  
Commercial  
0° to 70°C  
5V ± 5%  
3.3V  
+10%–5%  
Electrical Characteristics Over the Operating Range  
Parameter  
Description  
Input HIGH Voltage  
Input LOW Voltage  
Output HIGH Voltage  
Output LOW Voltage  
Test Condition  
Min.  
Max.  
+ 0.3  
CC3  
Unit  
V
2.0  
–0.3  
2.4  
V
V
V
IH  
V
V
V
0.8  
IL  
V
V
V
V
V
V
=Min. I = –4 mA  
V
OH  
CC  
CC  
CC  
CC  
CC  
CC  
OH  
=Min. I = 8 mA  
0.4  
750  
V
OL  
OL  
I
I
I
I
V
V
V
V
Operating Supply Current  
Operating Supply Current  
Operating Supply Current  
Operating Supply Current  
=Max., I  
=Max., I  
=Max., I  
=Max., I  
=0 mA, f=f  
=0 mA, f=f  
=0 mA, f=f  
=0 mA, f=f  
mA  
mA  
mA  
mA  
CC (74P430B)  
CC (74P431B)  
CC (74P434B)  
CC (74P435B)  
CC  
CC  
CC  
CC  
OUT  
OUT  
OUT  
OUT  
MAX  
MAX  
MAX  
MAX  
1400  
900  
1550  
Ordering Information  
Speed  
(MHz)  
Package  
Name  
Operating  
Range  
Ordering Code  
Package Type  
Description  
50  
CYM74P430BPM-50C  
CYM74P431BPM-50C  
CYM74P434BPM-50C  
CYM74P435BPM-50C  
CYM74P430BPM-60C  
CYM74P431BPM-60C  
CYM74P434BPM-60C  
CYM74P435BPM-60C  
CYM74P430BPM-66C  
CYM74P431BPM-66C  
CYM74P434BPM-66C  
CYM74P435BPM-66C  
PM38  
PM40  
PM39  
PM41  
PM38  
PM40  
PM39  
PM41  
PM38  
PM40  
PM39  
PM41  
160-Pin Dual-Readout SIMM  
160-Pin Dual-Readout SIMM  
160-Pin Dual-Readout SIMM  
256 KB  
512 KB  
Commercial  
Commercial  
Commercial  
256 KB extendedcache  
512 KB extendedcache  
256 KB  
60  
66  
512 KB  
256 KB extendedcache  
512 KB extendedcache  
256 KB  
512 KB  
256 KB extendedcache  
512 KB extendedcache  
Document #: 38-M-00079  
5
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Package Diagrams  
CYM74P430BPM in 160-pin Dual Readout SIMM PM38  
CYM74P434BPM in 160-pin Dual Readout SIMM PM39  
6
CYM74P430B/431B  
CYM74P434B/435B  
PRELIMINARY  
Package Diagrams (continued)  
CYM74P431BPM in 160-pin Dual Readout SIMM PM40  
*
CYM74P435BPM in 160-pin Dual Readout SIMM PM41  
*
* The 512-KByte modules CYM74P431B and CYM74P435B have a 1.300 max. height vs. 1.140 for the 256-KB modules.  
© Cypress Semiconductor Corporation, 1996. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of anycircuitry other than circuitry embodied in a CypressSemiconductor product. Nor does it conveyor imply any license under patent or other rights. CypressSemiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  

相关型号:

CYM74P435BPM-60C

Cache SRAM Module, 128KX32, 10ns, CMOS
CYPRESS

CYM74P435BPM-66C

Cache SRAM Module, 128KX32, 8.5ns, CMOS
CYPRESS
ETC

CYM74P54PM-60

Cache SRAM Module, 32KX64, 10.5ns, CMOS
CYPRESS

CYM74P54PM-66

Cache SRAM Module, 32KX64, 8.5ns, CMOS
CYPRESS

CYM74P550APM-50C

Cache Tag SRAM Module, 32KX64, 12ns, CMOS
CYPRESS

CYM74P550APM-60C

Cache Tag SRAM Module, 32KX64, 9ns, CMOS
CYPRESS

CYM74P55PM-60

Cache SRAM Module, 64KX64, 10.5ns, CMOS
CYPRESS

CYM74P55PM-66

Cache SRAM Module, 64KX64, 8.5ns, CMOS
CYPRESS

CYM74S430PM-50

x64 Interleaved Burst Mode SRAM Module
ETC

CYM74S430PM-50C

Cache SRAM Module, 32KX64, 13.5ns, CMOS
CYPRESS

CYM74S430PM-60

x64 Interleaved Burst Mode SRAM Module
ETC