CY7C1265KV18-550BZXC [CYPRESS]

36-Mbit QDR? II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency); 36 - Mbit的QDR ? II + SRAM 4字突发架构( 2.0周期读延迟)
CY7C1265KV18-550BZXC
型号: CY7C1265KV18-550BZXC
厂家: CYPRESS SEMICONDUCTOR    CYPRESS SEMICONDUCTOR
描述:

36-Mbit QDR? II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36 - Mbit的QDR ? II + SRAM 4字突发架构( 2.0周期读延迟)

存储 内存集成电路 静态存储器 时钟
文件: 总28页 (文件大小:922K)
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CY7C1265V18

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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6 CYPRESS

CY7C1265V18-300BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1265V18-300BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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4 CYPRESS

CY7C1265V18-300BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1265V18-300BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1265V18-333BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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2 CYPRESS

CY7C1265V18-333BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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1 CYPRESS

CY7C1265V18-333BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1265V18-333BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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8 CYPRESS

CY7C1265V18-375BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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2 CYPRESS

CY7C1265V18-375BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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13 CYPRESS

CY7C1265V18-375BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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1 CYPRESS

CY7C1265V18-375BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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1 CYPRESS

CY7C1265V18-400BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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24 CYPRESS

CY7C1265V18-400BZC

QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

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0 CYPRESS