CY7C12611KV18 [CYPRESS]

36-Mbit QDR® II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency); 36兆位QDR® II SRAM 4字突发架构( 2.0周期读延迟)
CY7C12611KV18
元器件型号: CY7C12611KV18
生产厂家: CYPRESS SEMICONDUCTOR    CYPRESS SEMICONDUCTOR
描述和应用:

36-Mbit QDR® II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36兆位QDR® II SRAM 4字突发架构( 2.0周期读延迟)

静态存储器
PDF文件: 总30页 (文件大小:897K)
下载文档:  下载PDF数据表文档文件
型号参数:CY7C12611KV18参数

CY7C1261KV18

36-Mbit QDR? II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

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14 CYPRESS

CY7C1261V18

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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4 CYPRESS

CY7C1261V18-300BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1261V18-300BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1261V18-300BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1261V18-300BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1261V18-333BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS

CY7C1261V18-333BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
1 CYPRESS

CY7C1261V18-333BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
0 CYPRESS

CY7C1261V18-333BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
0 CYPRESS

CY7C1261V18-375BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
0 CYPRESS

CY7C1261V18-375BZI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
1 CYPRESS

CY7C1261V18-375BZXC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
0 CYPRESS

CY7C1261V18-375BZXI

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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-
1 CYPRESS

CY7C1261V18-400BZC

36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

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0 CYPRESS