CY14MB064J2-SXI [CYPRESS]
64-Kbit (8 K x 8) Serial (I2C) nvSRAM Nonvolatile STORE/RECALL; 64千位（为8K ×8 ）串行（ I2C ）的nvSRAM非易失性存储/调用
| 型号： | CY14MB064J2-SXI |
| 厂家： | 
CYPRESS |
| 描述： | 64-Kbit (8 K x 8) Serial (I2C) nvSRAM Nonvolatile STORE/RECALL |
| 文件： | 总31页 (文件大小：2004K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CY14MB064J
CY14ME064J
64-Kbit (8 K × 8) Serial (I2C) nvSRAM
64-Kbit (8
K × 8) Serial (I2C) nvSRAM
■ Industry standard configurations
❐ Operating voltages:
Features
■ 64-Kbit nonvolatile static random access memory (nvSRAM)
❐ Internally organized as 8 K × 8
❐ STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by using I2C
command (SoftwareSTORE) orHSBpin(HardwareSTORE)
❐ RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by I2C command (Software RECALL)
❐ Automatic STORE on power-down with a small capacitor
(except for CY14MX064J1)
• CY14MB064J: VCC = 2.7 V to 3.6 V
• CY14ME064J: VCC = 4.5 V to 5.5 V
❐ Industrial temperature
❐ 8- and 16-pin small outline integrated circuit (SOIC) package
❐ Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14MB064J/CY14ME064J combines a 64-Kbit
nvSRAM[1] with a nonvolatile element in each memory cell. The
memory is organized as 8 K words of 8 bits each. The embedded
nonvolatile elements incorporate the QuantumTrap technology,
creating the world’s most reliable nonvolatile memory. The
SRAM provides infinite read and write cycles, while the
QuantumTrap cells provide highly reliable nonvolatile storage of
data. Data transfers from SRAM to the nonvolatile elements
(STORE operation) takes place automatically at power-down
(except for CY14MX064J1). On power-up, data is restored to the
SRAM from the nonvolatile memory (RECALL operation). The
STORE and RECALL operations can also be initiated by the user
through I2C commands.
■ High reliability
❐ Infinite read, write, and RECALL cycles
❐ 1 million STORE cycles to QuantumTrap
❐ Data retention: 20 years at 85 C
■ High speed I2C interface
❐ Industry standard 100 kHz and 400 kHz speed
❐ Fast-mode Plus: 1 MHz speed
❐ High speed: 3.4 MHz
❐ Zero cycle delay reads and writes
■ Write protection
❐ Hardware protection using Write Protect (WP) pin
❐ Software block protection for 1/4, 1/2, or entire array
■ I2C access to special functions
❐ Nonvolatile STORE/RECALL
❐ 8 byte serial number
❐ Manufacturer ID and Product ID
❐ Sleep mode
Configuration
Feature
AutoStore
CY14MX064J1 CY14MX064J2 CY14MX064J3
No
Yes
Yes
Yes
Yes
Software
STORE
Yes
■ Low power consumption
Hardware
STORE
No
No
Yes
❐ Average active current of 1 mA at 3.4 MHz operation
❐ Average standby mode current of 150 µA
❐ Sleep mode current of 8 µA
Slave Address
pins
A2, A1, A0
A2, A1
A2, A1, A0
Logic Block Diagram
Serial Number
8 x 8
VCC VCAP
Manufacture ID/
Product ID
Power Control
Block
Memory Control Register
Command Register
Quantrum Trap
8 K x 8
Sleep
STORE
SRAM
8 K x 8
Control Registers Slave
Memory Slave
SDA
SCL
A2, A1, A0
WP
I2C Control Logic
Slave Address
Decoder
Memory
Address and Data
Control
RECALL
Note
2
1. Serial (I C) nvSRAM is referred to as nvSRAM throughout the datasheet.
Cypress Semiconductor Corporation
Document #: 001- 65051 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 6, 2011
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CY14ME064J
Contents
Pinouts ..............................................................................3
Pin Definitions ..................................................................3
I2C Interface ......................................................................4
Protocol Overview ............................................................4
I2C Protocol – Data Transfer .......................................4
Data Validity ......................................................................5
START Condition (S) ........................................................5
STOP Condition (P) ..........................................................5
Repeated START (Sr) .......................................................5
Byte Format .......................................................................5
Acknowledge / No-acknowledge .....................................5
High Speed Mode (Hs-mode) ...........................................6
Serial Data Format in Hs-mode ...................................6
Slave Device Address ......................................................7
Memory Slave Device .................................................7
Control Registers Slave Device ...................................7
Memory Control Register ............................................8
Command Register .....................................................8
Write Protection (WP) .......................................................9
AutoStore Operation ........................................................9
Hardware STORE and HSB pin Operation .....................9
Hardware RECALL (Power-Up) ..................................9
Write Operation ...............................................................10
Read Operation ...............................................................10
Memory Slave Access ....................................................10
Write nvSRAM ...........................................................10
Current nvSRAM Read ..............................................12
Random Address Read .............................................13
Control Registers Slave .................................................14
Write Control Registers .............................................14
Current Control Registers Read ................................15
Random Control Registers Read ..............................15
Serial Number .................................................................16
Serial Number Write ..................................................16
Serial Number Lock ...................................................16
Serial Number Read ..................................................16
Device ID Read .........................................................17
Executing Commands Using Command Register .......17
Best Practices .................................................................18
Maximum Ratings ...........................................................19
Operating Range .............................................................19
DC Electrical Characteristics ........................................19
Data Retention and Endurance .....................................20
Thermal Resistance ........................................................20
AC Test Conditions ........................................................21
AC Switching Characteristics .......................................22
nvSRAM Specifications .................................................23
Software Controlled STORE/RECALL Cycles ..............24
Hardware STORE Cycle .................................................25
Ordering Information ......................................................26
Ordering Code Definitions .........................................26
Package Diagrams ..........................................................27
Acronyms ........................................................................29
Document Conventions .................................................29
Units of Measure .......................................................29
Document History Page ................................................30
Sales, Solutions, and Legal Information ......................31
Worldwide Sales and Design Support .......................31
Products ....................................................................31
PSoC Solutions .........................................................31
Document #: 001- 65051 Rev. *B
Page 2 of 31
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CY14ME064J
Pinouts
Figure 1. Pin Diagram – 8-pin SOIC
V
8
7
6
5
V
CAP
1
2
3
8
7
6
5
V
A0
A1
A2
CC
1
2
3
CC
A1
A2
WP
CY14MX064J2
Top View
not to scale
WP
CY14MX064J1
Top View
not to scale
SCL
SDA
SCL
SDA
V
4
SS
V
4
SS
Figure 2. Pin Diagram – 16-pin SOIC
V
16
15
14
13
12
NC
NC
NC
NC
1
2
CC
NC
V
3
4
5
6
7
8
CAP
CY14MX064J3
Top View
A2
not to scale
SDA
SCL
A1
WP
A0
11
10
NC
SS
V
9
HSB
Pin Definitions
Pin Name
SCL
I/O Type
Input
Description
Clock. Runs at speeds up to a maximum of fSCL
I/O. Input/Output of data through I2C interface.
.
SDA
Input/Output
Input
WP
Write Protect. Protects the memory from all writes. This pin is internally pulled LOW and hence can
be left open if not connected.
A2-A0[2]
HSB
Input
Slave Address. Defines the slave address for I2C. This pin is internally pulled LOW and hence can
be left open if not connected.
Input/Output
Hardware STORE Busy:
Output: Indicates busy status of nvSRAM when LOW. After each Hardware and Software STORE
operation HSB is driven HIGH for a short time (tHHHD) with standard output high current and then a
weak internal pull-up resistor keeps this pin HIGH (External pull up resistor connection optional).
Input: Hardware STORE implemented by pulling this pin LOW externally.
VCAP
Power supply AutoStore Capacitor. Supplies power to the nvSRAM during power loss to STORE data from the
SRAM to nonvolatile elements. If not required, AutoStore must be disabled and this pin left as no
connect. It must never be connected to ground.
NC
VSS
VCC
No connect
No Connect. This pin is not connected to the die.
Power supply Ground
Power supply Power supply
Note
2. A0 pin is not available in CY14MX064J2.
Document #: 001- 65051 Rev. *B
Page 3 of 31
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CY14MB064J
CY14ME064J
2
bit slave address and eighth bit (R/W) indicating a read (1) or a
write (0) operation. All signals are transmitted on the open-drain
SDA line and are synchronized with the clock on SCL line. Each
byte of data transmitted on the I2C bus is acknowledged by the
receiver by holding the SDA line LOW on the ninth clock pulse.
The request for write by the master is followed by the memory
address and data bytes on the SDA line. The writes can be
performed in burst-mode by sending multiple bytes of data. The
memory address increments automatically after receiving
/transmitting of each byte on the falling edge of 9th clock cycle.
The new address is latched just prior to sending/receiving the
acknowledgment bit. This allows the next sequential byte to be
accessed with no additional addressing. On reaching the last
memory location, the address rolls back to 0x0000 and writes
continue. The slave responds to each byte sent by the master
during a write operation with an ACK. A write sequence can be
terminated by the master generating a STOP or Repeated
START condition.
I C Interface
I2C bus consists of two lines – serial clock line (SCL) and serial
data line (SDA) that carry information between multiple devices
on the bus. I2C supports multi-master and multi-slave
configurations. The data is transmitted from the transmitter to the
receiver on the SDA line and is synchronized with the clock SCL
generated by the master.
The SCL and SDA lines are open-drain lines and are pulled up
to VCC using resistors. The choice of pull-up resistor on the
system depends on the bus capacitance and the intended speed
of operation. The master generates the clock and all the data
I/Os are transmitted in synchronization with this clock. The
CY14MX064J supports up to 3.4 MHz clock speed on SCL line.
Protocol Overview
This device supports only a 7-bit addressable scheme. The
master generates
a
START condition to initiate the
A read request is performed at the current address location
(address next to the last location accessed for read or write). The
memory slave device responds to a read request by transmitting
the data on the current address location to the master. A random
address read may also be performed by first sending a write
request with the intended address of read. The master must
abort the write immediately after the last address byte and issue
a Repeated START or STOP signal to prevent any write
operation. The following read operation starts from this address.
The master acknowledges the receipt of one byte of data by
holding the SDA pin LOW for the ninth clock pulse. The reads
can be terminated by the master sending a no-acknowledge
(NACK) signal on the SDA line after the last data byte. The
no-acknowledge signal causes the CY14MX064J to release the
SDA line and the master can then generate a STOP or a
Repeated START condition to initiate a new operation.
communication followed by broadcasting a slave select byte.
The slave select byte consists of a seven bit address of the slave
that the master intends to communicate with and R/W bit
indicating a read or a write operation. The selected slave
responds to this with an acknowledgement (ACK). After a slave
is selected, the remaining part of the communication takes place
between the master and the selected slave device. The other
devices on the bus ignore the signals on the SDA line till a STOP
or Repeated START condition is detected. The data transfer is
done between the master and the selected slave device through
the SDA pin synchronized with the SCL clock generated by the
master.
2
I C Protocol – Data Transfer
Each transaction in I2C protocol starts with the master
generating a START condition on the bus, followed by a seven
Figure 3. System Configuration using Serial (I2C) nvSRAM
Vcc
R
R
= (V - V max) / I
CC OL OL
Pmin
= t / C
Pmax
r
b
SDA
SCL
Microcontroller
Vcc
Vcc
A0
SCL
SDA
A0
A1
SCL
SDA
A0
A1
A2
SCL
SDA
A1
A2
A2
WP
WP
WP
CY14MX064J
#1
CY14MX064J
#0
CY14MX064J
#7
Document #: 001- 65051 Rev. *B
Page 4 of 31
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CY14ME064J
Data Validity
STOP Condition (P)
The data on the SDA line must be stable during the HIGH period
of the clock. The state of the data line can only change when the
clock on the SCL line is LOW for the data to be valid. There are
only two conditions under which the SDA line may change state
with SCL line held HIGH, that is, START and STOP condition.
The START and STOP conditions are generated by the master
to signal the beginning and end of a communication sequence
on the I2C bus.
A LOW to HIGH transition on the SDA line while SCL is HIGH
indicates a STOP condition. This condition indicates the end of
the ongoing transaction.
START and STOP conditions are always generated by the
master. The bus is considered to be busy after the START
condition. The bus is considered to be free again after the STOP
condition.
Repeated START (Sr)
START Condition (S)
If an Repeated START condition is generated instead of a STOP
condition the bus continues to be busy. The ongoing transaction
on the I2C lines is stopped and the bus waits for the master to
send a slave ID for communication to restart.
A HIGH to LOW transition on the SDA line while SCL is HIGH
indicates a START condition. Every transaction in I2C begins
with the master generating a START condition.
Figure 4. START and STOP Conditions
SDA
SCL
SDA
SCL
S
P
STOP Condition
START Condition
Figure 5. Data Transfer on the I2C Bus
handbook, full pagewidth
P
SDA
Sr
Acknowledgement
signal from slave
Acknowledgement
signal from receiver
MSB
S
Sr
or
P
SCL
1
2
7
8
9
ACK
1
2
3 - 8
9
or
Sr
ACK
START or
STOP or
Repeated START
condition
Repeated START
condition
Byte complete,
interrupt within slave
Clock line held LOW while
interrupts are serviced
does not acknowledge the receipt of data and the operation is
aborted.
NACK can be generated by master during a READ operation in
following cases:
Byte Format
Each operation in I2C is done using 8 bit words. The bits are sent
in MSB first format on SDA line and each byte is followed by an
ACK signal by the receiver.
■ The master did not receive valid data due to noise
An operation continues till a NACK is sent by the receiver or
STOP or Repeated START condition is generated by the master
The SDA line must remain stable when the clock (SCL) is HIGH
except for a START or STOP condition.
■ The master generates a NACK to abort the READ sequence.
After a NACK is issued by the master, nvSRAM slave releases
control of the SDA pin and the master is free to generate a
Repeated START or STOP condition.
NACK can be generated by nvSRAM slave during a WRITE
operation in following cases:
Acknowledge / No-acknowledge
After transmitting one byte of data or address, the transmitter
releases the SDA line. The receiver pulls the SDA line LOW to
acknowledge the receipt of the byte. Every byte of data
transferred on the I2C bus needs to be responded with an ACK
signal by the receiver to continue the operation. Failing to do so
is considered as a NACK state. NACK is the state where receiver
■ nvSRAM did not receive valid data due to noise.
■ The master tries to access write protected locations on the
nvSRAM. Master must restart the communication by
generating a STOP or Repeated START condition.
Document #: 001- 65051 Rev. *B
Page 5 of 31
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CY14ME064J
Figure 6. Acknowledge on the I2C Bus
DATA OUTPUT
BY MASTER
not acknowledge (A)
DATA OUTPUT
BY SLAVE
acknowledge (A)
8
SCL FROM
MASTER
1
2
9
S
clock pulse for
acknowledgement
START
condition
Serial Data Format in Hs-mode
High Speed Mode (Hs-mode)
Serial data transfer format in Hs-mode meets the standard-mode
I2C-bus specification. Hs-mode can only commence after the
following conditions (all of which are in F/S-modes):
In Hs-mode, nvSRAM can transfer data at bit rates of up to
3.4 Mbit/s. A master code (0000 1XXXb) must be issued to place
the device into high speed mode. This enables master/slave
communication for speed upto 3.4 MHz. A stop condition exits
Hs-mode.
1. START condition (S)
2. 8-bit master code (0000 1XXXb)
3. No-acknowledge bit (A)
Figure 7. Data transfer format in Hs-mode
Hs-mode
F/S-mode
F/S-mode
S
P
A/A
MASTER CODE
A
Sr SLAVE ADD. R/W
A
DATA
n (bytes+ack.)
Hs-mode continues
SLAVE ADD.
Sr
Single and multiple-byte reads and writes are supported. After
the device enters into Hs-mode, data transfer continues in
Hs-mode until stop condition is sent by master device. The slave
switches back to F/S-mode after a STOP condition (P). To
continue data transfer in Hs-mode, the master sends Repeated
START (Sr).
See Figure 13 on page 11 and Figure 16 on page 12 for Hs-mode
timings for read and write operation.
Document #: 001- 65051 Rev. *B
Page 6 of 31
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CY14MB064J
CY14ME064J
accessing mechanism is described in Memory Slave Device on
page 7.
Slave Device Address
Every slave device on an I2C bus has a device select address.
The first byte after START condition contains the slave device
address with which the master intends to communicate. The
seven MSBs are the device address and the LSB (R/W bit) is
used for indicating Read or Write operation. The CY14MX064J
reserves two sets of upper 4 MSBs [7:4] in the slave device
address field for accessing Memory and Control Registers. The
The nvSRAM product provides two different functionalities:
Memory and Control Registers functions (such as serial number
and product ID). The two functions of the device are accessed
through different slave device addresses. The first four most
significant bits [7:4] in the device address register are used to
select between the nvSRAM functions.
Table 1. Slave device Addressing
nvSRAM
Function Select
Bit 7 Bit 6 Bit 5 Bit 4
Bit 3
Bit 2
Bit 1 Bit 0
CY14MX064J Slave Devices
1
0
0
0
1
1
0
1
Device Select ID
R/W Selects Memory
Memory, 8 K × 8
Control Registers
- Memory Control Register, 1 × 8
- Serial Number, 8 × 8
- Device ID, 4 × 8
Selects Control
Registers
Device Select ID
R/W
- Command Register, 1 × 8
Memory Slave Device
Control Registers Slave Device
The nvSRAM device is selected for Read/Write if the master
issues the slave address as 1010b followed by two/three bits of
device select. For CY14MX064J1/J3 device select is 3 bits and
for CY14MX064J2 it is two bits with third bit don’t care. If slave
address sent by the master matches with the Memory Slave
device address then depending on the R/W bit of the slave
address, data is either read from (R/W = ‘1’) or written to (R/W =
’0’) the nvSRAM.
The Control Registers Slave device includes the Serial Number,
Product ID, Memory Control and Command Register.
The nvSRAM Control Register Slave device is selected for
Read/Write if the master issues the Slave address as 0011b
followed by two/three bits of device select. For
CY14MX064J1/J3 device select is 3 bits and for CY14MX064J2
it is two bits with third bit don’t care. If the slave address sent by
the master matches with the Memory Slave device address then
depending on the R/W bit of the slave address, data is either read
from (R/W = ‘1’) or written to (R/W = ’0’) the nvSRAM.
The address length for CY14MX064J is 13 bits and thus it
requires 2 address bytes to map the entire memory address
location. The dedicated two address bytes represent bit A0 to
A12. However, since the address is only 13-bits, it implies that
the first three MSB bits that is fed in is ignored by the device.
Although these bits are ‘don’t care’, Cypress recommends that
this bit is treated as 0 to enable seamless transition to higher
memory densities.
Figure 9. Control Registers Slave Device Address
handbook, halfpMagSe B
LSB
R/W
0
0
1
1
A2 A1 A0/X
Device Select
Slave ID
Figure 8. Memory Slave Device Address
handbook, halfpMagSe B
LSB
1
0
1
A2 A1
0
A0/X R/W
Device Select
Slave ID
Document #: 001- 65051 Rev. *B
Page 7 of 31
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Command Register
Table 2. Control Registers map
The Command Register resides at address “AA” of the Control
Registers Slave device. This is a write only register. The byte
written to this register initiates a STORE, RECALL, AutoStore
Enable, AutoStore Disable and sleep mode operation as listed in
Table 5. Refer to Serial Number on page 16 for details on how to
execute a command register byte.
Address Description Read/Write
Details
0x00
Memory
Control
Register
Read/Write Contains Block
ProtectBitsandSerial
Number Lock bit
0x01
0x02
0x03
0x04
0x05
0x06
0x07
0x08
0x09
0x0A
0x0B
0x0C
0x0D
0xAA
Serial Number Read/Write Programmable Serial
8 Bytes
(Read only Number. Locked by
when SNL setting the Serial
Table 5. Command Register bytes
is set)
Number lock bit in the
Memory Control
Register to ‘1’.
Data Byte
Command
Description
[7:0]
0011 1100
STORE
STORE SRAM data to nonvolatile
memory
0110 0000
RECALL RECALL data from nonvolatile
memory to SRAM
0101 1001
0001 1001
1011 1001
ASENB
ASDISB
SLEEP
Enable AutoStore
Disable AutoStore
Device ID
Reserved
Read only Device ID is factory
programmed
Enter Sleep Mode for low power
consumption
Reserved Reserved
■ STORE: Initiates nvSRAM Software STORE. The nvSRAM
cannot be accessed for tSTORE time after this instruction has
been executed. When initiated, the device performs a STORE
operation regardless of whether a write has been performed
since the last NV operation. After the tSTORE cycle time is
completed, the SRAM is activated again for read/write
operations.
Command
Register
Write only Allows commands for
STORE, RECALL,
AutoStore
Enable/Disable,
SLEEP Mode
Memory Control Register
■ RECALL: Initiates nvSRAM Software RECALL. The nvSRAM
cannot be accessed for tRECALL time after this instruction has
been executed. The RECALL operation does not alter the data
in the nonvolatile elements. A RECALL may be initiated in two
ways: Hardware RECALL, initiated on power-up; and Software
RECALL, initiated by a I2C RECALL instruction.
The Memory Control Register contains the following bits:
Table 3. Memory Control Register Bits
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
0
SNL
(0)
0
0
BP1
(0)
BP0
(0)
0
0
■ ASENB: Enables nvSRAM AutoStore. The nvSRAM cannot be
accessed for tSS time after this instruction has been executed.
This setting is not nonvolatile and needs to be followed by a
manual STORE sequence if this is desired to survive power
cycle. The part comes from the factory with AutoStore Enabled.
■ BP1:BP0: Block Protect bits are used to protect 1/4, 1/2 or full
memory array. These bits can be written through a write
instruction to the 0x00 location of the Control Register Slave
device. However, any STORE cycle causes transfer of SRAM
data into a nonvolatile cell regardless of whether or not the
block is protected. The default value shipped from the factory
for BP0 and BP1 is ‘0’.
■ ASDISB: Disables nvSRAM AutoStore. The nvSRAM cannot
be accessed for tSS time after this instruction has been
executed. This setting is not nonvolatile and needs to be
followed by a manual STORE sequence if this is desired to
survive the power cycle.
Table 4. Block Protection
Note If AutoStore is disabled and VCAP is not required, it is
required that the VCAP pin is left open. VCAP pin must never be
connected to ground. Power-Up RECALL operation cannot be
disabled in any case.
Level
0
BP1:BP0
Block Protection
00
01
10
11
None
1/4
1/2
1
0x1800-0x1FFF
0x1000-0x1FFF
0x0000-0x1FFF
■ SLEEP: SLEEP instruction puts the nvSRAM in a sleep mode.
When the SLEEP instruction is registered, the nvSRAM
performs a STORE operation to secure the data to nonvolatile
memory and then enters into sleep mode. Whenever nvSRAM
enters into sleep mode, it initiates non volatile STORE cycle
which results in losing an endurance cycle per sleep command
execution. A STORE cycle starts only if a write to the SRAM
has been performed since the last STORE or RECALL cycle.
SNL (S/N Lock) Bit: Serial Number Lock bit (SNL) is used to lock
the serial number. Once the bit is set to ‘1’, the serial number
registers are locked and no modification is allowed. This bit
cannot be cleared to ‘0’. The serial number is secured on the next
STORE operation (Software STORE or AutoStore). If AutoStore
is not enabled, user must perform the Software STORE
operation to secure the lock bit status. If a STORE was not
performed, the serial number lock bit will not survive the power
cycle. The default value shipped from the factory for SNL is ‘0’.
Document #: 001- 65051 Rev. *B
Page 8 of 31
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CY14ME064J
The nvSRAM enters into sleep mode as follows:
1. The Master sends a START command
Figure 10. AutoStore Mode
VCC
2. The Master sends Control Registers Slave device ID with I2C
Write bit set (R/W = ’0’)
0.1 uF
3. The Slave (nvSRAM) sends an ACK back to the Master
4. The Master sends Command Register address (0xAA)
5. The Slave (nvSRAM) sends an ACK back to the Master
VCC
6. The Master sends Command Register byte for entering into
Sleep mode
VCAP
7. The Slave (nvSRAM) sends an ACK back to the Master
8. The Master generates a STOP condition.
VCAP
VSS
Once in Sleep mode the device starts consuming IZZ current
t
SLEEP time after SLEEP instruction is registered. The device is
not accessible for normal operations until it is out of sleep mode.
The nvSRAM wakes up after tWAKE duration after the device
slave address is transmitted by the master.
Hardware STORE and HSB pin Operation
Transmitting any of the two slave addresses wakes the nvSRAM
from Sleep mode. The nvSRAM device is not accessible during
tSLEEP and tWAKE interval, and any attempt to access the
nvSRAM device by the master is ignored and nvSRAM sends
NACK to the master. As an alternative method of determining
when the device is ready, the master can send read or write
commands and look for an ACK.
The HSB pin in CY14MX064J is used to control and
acknowledge STORE operations. If no STORE or RECALL is in
progress, this pin can be used to request a Hardware STORE
cycle. When the HSB pin is driven LOW, device conditionally
initiates a STORE operation after tDELAY duration. An actual
STORE cycle starts only if a write to the SRAM has been
performed since the last STORE or RECALL cycle. Reads and
Writes to the memory are inhibited for tSTORE duration or as long
as HSB pin is LOW.
Write Protection (WP)
The WP pin is an active high pin and protects entire memory and
all registers from write operations. To inhibit all the write
operations, this pin must be held high. When this pin is high, all
memory and register writes are prohibited and address counter
is not incremented. This pin is internally pulled LOW and hence
can be left open if not used.
The HSB pin also acts as an open drain driver (internal 100 k
weak pull-up resistor) that is internally driven LOW to indicate a
busy condition when the STORE (initiated by any means) is in
progress.
Note After each Hardware and Software STORE operation HSB
is driven HIGH for a short time (tHHHD) with standard output high
current and then remains HIGH by internal 100 k pull-up
resistor.
AutoStore Operation
The AutoStore operation is a unique feature of nvSRAM which
automatically stores the SRAM data to QuantumTrap cells
during power-down. This STORE makes use of an external
capacitor (VCAP) and enables the device to safely STORE the
data in the nonvolatile memory when power goes down.
Note For successful last data byte STORE, a hardware STORE
should be initiated at least one clock cycle after the last data bit
D0 is received.
Upon completion of the STORE operation, the nvSRAM memory
access is inhibited for tLZHSB time after HSB pin returns HIGH.
Leave the HSB pin unconnected if not used.
During normal operation, the device draws current from VCC to
charge the capacitor connected to the VCAP pin. When the
voltage on the VCC pin drops below VSWITCH during power-down,
the device inhibits all memory accesses to nvSRAM and
automatically performs a conditional STORE operation using the
charge from the VCAP capacitor. The AutoStore operation is not
initiated if no write cycle has been performed since the last
STORE or RECALL.
Hardware RECALL (Power-Up)
During power-up, when VCC crosses VSWITCH, an automatic
RECALL sequence is initiated which transfers the content of
nonvolatile memory on to the SRAM. The data would previously
have been stored on the nonvolatile memory through a STORE
sequence.
Note If a capacitor is not connected to VCAP pin, AutoStore must
be disabled by issuing the AutoStore Disable instruction
specified in Command Register on page 8. If AutoStore is
enabled without a capacitor on VCAP pin, the device attempts an
AutoStore operation without sufficient charge to complete the
Store. This will corrupt the data stored in nvSRAM as well as the
serial number and it will unlock the SNL bit.
A Power-Up RECALL cycle takes tFA time to complete and the
memory access is disabled during this time. HSB pin can be
used to detect the Ready status of the device.
Figure 10 shows the proper connection of the storage capacitor
(VCAP
) for AutoStore operation. Refer to DC Electrical
Characteristics on page 19 for the size of the VCAP
.
Document #: 001- 65051 Rev. *B
Page 9 of 31
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CY14ME064J
Write Operation
Read Operation
The last bit of the slave device address indicates a read or a write
operation. In case of a write operation, the slave device address
is followed by the memory or register address and data. A write
operation continues as long as a STOP or Repeated START
condition is generated by the master or if a NACK is issued by
the nvSRAM.
If the last bit of the slave device address is ‘1’, a read operation
is assumed and the nvSRAM takes control of the SDA line
immediately after the slave device address byte is sent out by
the master. The read operation starts from the current address
location (the location following the previous successful write or
read operation). When the last address is reached, the address
counter loops back to the first address.
A NACK is issued from the nvSRAM under the following
conditions:
In case of the Control Register Slave, whenever a burst read is
performed such that it flows to a non-existent address, the reads
operation will loop back to 0x00. This is applicable, in particular
for the Command Register.
1. A valid Device ID is not received.
2. A write (burst write) access to a protected memory block
address returns a NACK from nvSRAM after the data byte is
received. However, the address counter is set to this address
and the following current read operation starts from this
address.
There are the following ways to end a read operation:
1. The Master issues a NACK on the 9th clock cycle followed by
a STOP or a Repeated START condition on the 10th clock
cycle.
3. A write/random read access to an invalid or out-of-bound
memory address returns a NACK from the nvSRAM after the
address is received. The address counter remains unchanged
in such a case.
2. Master generates a STOP or Repeated START condition on
the 9th clock cycle.
More details on write instruction are provided in Section Memory
Slave Access on page 10.
4. A write to the Command Register with an invalid command.
This operation would return a NACK from the nvSRAM.
Memory Slave Access
After a NACK is sent out from the nvSRAM, the write operation
is terminated and any data on the SDA line is ignored till a STOP
or a Repeated START condition is generated by the master.
The following sections describe the data transfer sequence
required to perform Read or Write operations from nvSRAM.
For example, consider a case where the burst write access is
performed on Control Register Slave address 0x01 for writing the
serial number and continued to the address 0x09, which is a read
only register. The device returns a NACK and address counter
will not be incremented. A following read operation will be started
from the address 0x09. Further, any write operation which starts
from a write protected address (say, 0x09) will be responded by
the nvSRAM with a NACK after the data byte is sent and set the
address counter to this address. A following read operation will
start from the address 0x09 in this case also.
Write nvSRAM
Each write operation consists of a slave address being
transmitted after the start condition. The last bit of slave address
must be set as ‘0’ to indicate a Write operation. The master may
write one byte of data or continue writing multiple consecutive
address locations while the internal address counter keeps
incrementing automatically. The address register is reset to
0x0000 after the last address in memory is accessed. The write
operation continues till a STOP or Repeated START condition is
generated by the master or a NACK is issued by the nvSRAM.
Note In case the user tries to read/write access an address that
does not exist (for example 0x0D in Control Register Slave),
A write operation is executed only after all the 8 data bits have
been received by the nvSRAM. The nvSRAM sends an ACK
signal after a successful write operation. A write operation may
be terminated by the master by generating a STOP condition or
a Repeated START operation. If the master desires to abort the
current write operation without altering the memory contents, this
should be done using a START/STOP condition prior to the 8th
data bit.
nvSRAM responds with
a NACK immediately after the
out-of-bound address is transmitted. The address counter
remains unchanged and holds the previous successful read or
write operation address.
A write operation is performed internally with no delay after the
eighth bit of data is transmitted. If a write operation is not
intended, the master must terminate the write operation before
the eighth clock cycle by generating a STOP or Repeated
START condition.
If the master tries to access a write protected memory address
on the nvSRAM, a NACK is returned after the data byte intended
to write the protected address is transmitted and address counter
will not be incremented. Similarly, in a burst mode write
operation, a NACK is returned when the data byte that attempts
to write a protected memory location and address counter will not
be incremented.
More details on write instruction are provided in Section Memory
Slave Access on page 10.
Document #: 001- 65051 Rev. *B
Page 10 of 31
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CY14ME064J
Figure 11. Single-Byte Write into nvSRAM (except Hs-mode)
S
T
A
R
T
S
T
By Master
SDA Line
By nvSRAM
Memory Slave Address
Address MSB
X X
Address LSB
Data Byte
0
P
P
X
1
A2 A1
A0
S
1
0
0
0
A
A
A
A
Figure 12. Multi-Byte Write into nvSRAM (except Hs-mode)
S
T
A
R
T
S
T
0
By Master
Memory Slave Address
Address MSB
X X
Address LSB
Data Byte 1
Data Byte N
P
P
S
1
0
0
A0
0
SDA Line
1
A2 A1
X
By nvSRAM
A
A
A
A
A
Figure 13. Single-Byte Write into nvSRAM (Hs-mode)
S
T
A
R
T
S
T
0
By Master
Hs-mode command
Memory Slave Address
A2 A1 A0
Address MSB
X X X
Address LSB
Data Byte
P
SDA Line
P
0
1
X
X
X
1
Sr
0
1
0
S
0
0
0
0
By nvSRAM
A
A
A
A
A
Figure 14. Multi-Byte Write into nvSRAM (Hs-mode)
S
T
A
R
T
By Master
Hs-mode command
Memory Slave Address
Address MSB
X X
X
Address LSB
Data Byte 1
0
1
X
X
X
1
0
1 0
A2 A1
A0
S
0
0
0
Sr
0
SDA Line
By nvSRAM
A
A
A
A
A
S
T
0
Data Byte N
Data Byte 3
Data Byte 2
By Master
P
SDA Line
P
A
By nvSRAM
A
A
Document #: 001- 65051 Rev. *B
Page 11 of 31
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CY14ME064J
Current nvSRAM Read
Each read operation starts with the master transmitting the nvSRAM slave address with the LSB set to ‘1’ to indicate “Read”. The
reads start from the address on the address counter. The address counter is set to the address location next to the last accessed with
a “Write” or “Read” operation. The master may terminate a read operation after reading 1 byte or continue reading addresses
sequentially till the last address in the memory after which the address counter rolls back to the address 0x0000. The valid methods
of terminating read access are described in Section Read Operation on page 10.
Figure 15. Current Location Single-Byte nvSRAM Read (except Hs-mode)
S
T
A
R
T
S
T
0
A
Memory Slave Address
By Master
P
P
SDA Line
1
A2 A1
A0
S
1
0
0
1
By nvSRAM
Data Byte
A
Figure 16. Current Location Multi-Byte nvSRAM Read (except Hs-mode)
S
T
A
R
T
S
T
0
A
A
Memory Slave Address
By Master
SDA Line
By nvSRAM
P
P
1
A2 A1 A0
1
S
1
0
0
Data Byte N
Data Byte
A
Figure 17. Current Location Single-Byte nvSRAM Read (Hs-mode)
S
T
A
R
T
S
T
A
0
P
By Master
Hs-mode command
Memory Slave Address
SDA Line
1
1 0 A2 A1 A0
P
0
1
X
X
X
1
Sr
0
S
0
0
0
By nvSRAM
Data Byte
A
A
Figure 18. Current Location Multi-Byte nvSRAM Read (Hs-mode)
S
T
A
R
T
S
T
0
A
A
By Master
Hs-mode command
Memory Slave Address
P
1
1 0 A2 A1 A0
P
SDA Line
0
1
X
X
X
1
Sr
0
S
0
0
0
Data Byte N
Data Byte
By nvSRAM
A
A
Document #: 001- 65051 Rev. *B
Page 12 of 31
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CY14ME064J
Random Address Read
A random address read is performed by first initiating a write operation and generating a Repeated START immediately after the last
address byte is acknowledged. The address counter is set to this address and the next read access to this slave will initiate read
operation from here. The master may terminate a read operation after reading 1 byte or continue reading addresses sequentially till
the last address in the memory after which the address counter rolls back to the start address 0x0000.
Figure 19. Random Address Single-Byte Read (except Hs-mode)
S
T
A
R
T
S
T
0
A
By Master
Memory Slave Address
Address MSB
X
Address LSB
Memory slave Address
P
P
SDA Line
1
A2 A1
Sr
0
1
A2 A1 A0
1
X
S
1
0
0
A0
X
1
0
0
By nvSRAM
Data Byte
A
A
A
A
Figure 20. Random Address Multi-Byte Read (except Hs-mode)
S
T
A
R
T
A
By Master
Memory Slave Address
Address MSB
X X
Address LSB
Memory slave Address
1
A2 A1
Sr
0
1
A2 A1 A0
1
A0
X
S
1
0
0
1
0
0
SDA Line
By nvSRAM
Data Byte 1
A
A
A
A
S
T
0
A
P
P
Data Byte N
Figure 21. Random Address Single-Byte Read (Hs-mode)
S
T
A
R
T
By Master
Hs-mode command
Memory Slave Address
Address MSB
X
Address LSB
Memory Slave Address
1
1 0 A2 A1 A0
0
1
Sr
0
SDA Line
0
1
X
X
X
1
0
1
0
A2 A1 A0
X
X
S
0
0
0
Sr
A
By nvSRAM
A
A
A
A
A
S
T
0
P
P
Data Byte
Document #: 001- 65051 Rev. *B
Page 13 of 31
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CY14ME064J
Figure 22. Random Address Multi-Byte Read (Hs-mode)
S
T
A
R
T
By Master
Hs-mode command
Memory Slave Address
A2 A1 A0
0
Address MSB
X X
Address LSB
Memory Slave Address
SDA Line
1
1 0 A2 A1 A0
1
Sr
0
0
1
X
X
X
1
0
1
0
S
0
0
0
Sr
X
By nvSRAM
A
A
A
A
A
S
T
0
A
A
P
P
Data Byte
Data Byte N
first address (0x00) as in this case, the current address is an
out-of-bound address. The address is not incremented and the
next current read operation begins from this address location. If
a write operation is attempted on an out-of-bound address
location, the nvSRAM sends a NACK immediately after the
address byte is sent.
Control Registers Slave
The following sections describes the data transfer sequence
required to perform Read or Write operations from Control
Registers Slave.
Write Control Registers
Further, if the serial number is locked, only two addresses (0xAA
or Command Register, and 0x00 or Memory Control Register)
are writable in the Control Registers Slave. On a write operation
to any other address location, the device will acknowledge
command byte and address bytes but it returns a NACK from the
Control Registers Slave for data bytes. In this case, the address
will not be incremented and a current read will happen from the
last acknowledged address.
To write the Control Registers Slave, the master transmits the
Control Registers Slave address after generating the START
condition. The write sequence continues from the address
location specified by the master till the master generates a STOP
condition or the last writable address location.
If a non writable address location is accessed for write operation
during a normal write or a burst, the slave generates a NACK
after the data byte is sent and the write sequence terminates.
Any following data bytes are ignored and the address counter is
not incremented.
The nvSRAM Control Registers Slave sends a NACK when an
out of bound memory address is accessed for write operation, by
the master. In such a case, a following current read operation
begins from the last acknowledged address.
If a write operation is performed on the Command Register
(0xAA), the following current read operation also begins from the
Figure 23. Single-Byte Write into Control Registers
S
T
A
R
T
S
T
Control Registers
Slave Address
Control Register Address
Data Byte
By Master
0
P
P
1
A2 A1 A0
0
SDA Line
S
0
0
1
By nvSRAM
A
A
A
Figure 24. Multi-Byte Write into Control Registers
S
T
A
R
T
S
T
0
Control Registers
Slave Address
Control Register Address
Data Byte
Data Byte N
By Master
P
P
1
A2 A1 A0
0
SDA Line
S
0
0
1
By nvSRAM
A
A
A
A
Document #: 001- 65051 Rev. *B
Page 14 of 31
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CY14ME064J
Current Control Registers Read
A read of Control Registers Slave is started with master sending the Control Registers Slave address after the START condition with
the LSB set to ‘1’. The reads begin from the current address which is the next address to the last accessed location. The reads to
Control Registers Slave continues till the last readable address location and loops back to the first location (0x00). Note that the
Command Register is a write only register and is not accessible through the sequential read operations. If a burst read operation
begins from the Command Register (0xAA), the address counter wraps around to the first address in the register map (0x00).
Figure 25. Control Registers Single-Byte Read
S
T
A
R
T
S
T
0
Control Registers
Slave Address
A
By Master
P
P
SDA Line
1
A2 A1
A0
S
0
0
1
1
By nvSRAM
Data Byte
A
Figure 26. Current Control Registers Multi-Byte Read
S
T
A
R
T
S
T
0
Control Registers
Slave Address
A
A
By Master
P
P
1
A2 A1 A0
1
SDA Line
S
0
0
1
By nvSRAM
Data Byte
Data Byte N
A
Random Control Registers Read
A read of random address may be performed by initiating a write operation to the intended location of read and immediately following
with a Repeated START operation. The reads to Control Registers Slave continues till the last readable address location and loops
back to the first location (0x00). Note that the Command Register is a write only register and is not accessible through the sequential
read operations. A random read starting at the Command Register (0xAA) loops back to the first address in the Control Registers map
(0x00). If a random read operation is initiated from an out-of-bound memory address, the nvSRAM sends a NACK after the address
byte is sent
.
Figure 27. Random Control Registers Single-Byte Read
S
T
A
R
T
S
T
0
Control Registers
Slave Address
A
Control Register Address
Control Registers Slave Address
By Master
P
Sr
1
A2
A1 A0 1
P
0
1
SDA Line
0
1
A2 A1
A0
S
0
0
1
0
By nvSRAM
Data Byte
A
A
A
Document #: 001- 65051 Rev. *B
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CY14ME064J
Figure 28. Random Control Registers Multi-Byte Read
S
T
A
R
T
Control Registers
Slave Address
A
Control Register Address
Control Registers Slave Address
By Master
Sr
1
A2
A1 A0
0
1
1
0
1
A2 A1
A0
SDA Line
S
0
0
1
0
By nvSRAM
Data Byte
A
A
A
S
T
0
A
P
P
Data Byte N
when the lock bit is set, a NACK is returned and write will not be
performed.
Serial Number
Serial number is an 8 byte memory space provided to the user
to uniquely identify this device. It typically consists of a two byte
customer ID, followed by five bytes of unique serial number and
one byte of CRC check. However, nvSRAM does not calculate
the CRC and it is up to the user to utilize the eight byte memory
space in the desired format. The default values for the eight byte
locations are set to ‘0x00’.
Serial Number Lock
After writes to Serial Number registers is complete, master is
responsible for locking the serial number by setting the serial
number lock bit to ‘1’ in the Memory Control Register (0x00). The
content of Memory Control Register and serial number are
secured on the next STORE operation (STORE or AutoStore). If
AutoStore is not enabled, user must perform STORE operation
to secure the lock bit status.
Serial Number Write
The serial number can be accessed through the Control
Registers Slave Device. To write the serial number, master
transmits the Control Registers Slave address after the START
condition and writes to the address location from 0x01 to 0x08.
The content of Serial Number registers is secured to nonvolatile
memory on the next STORE operation. If AutoStore is enabled,
nvSRAM automatically stores the Serial number in the
nonvolatile memory on power-down. However, if AutoStore is
disabled, user must perform a STORE operation to secure the
contents of Serial Number registers.
If a STORE was not performed, the serial number lock bit will not
survive power cycle. The serial number lock bit and 8 - byte serial
number is defaults to ‘0’ at power-up.
Serial Number Read
Serial number can be read back by a read operation of the
intended address of the Control Registers Slave. The Control
Registers Device loops back from the last address (excluding the
Command Register) to 0x00 address location while performing
burst read operation. The serial number resides in the locations
from 0x01 to 0x08. Even if the serial number is not locked, a
serial number read operation will return the current values written
to the serial number registers. Master may perform a serial
number read operation to confirm if the correct serial number is
written to the registers before setting the lock bit.
Note If the serial number lock (SNL) bit is not set, the serial
number registers can be re-written regardless of whether or not
a STORE has happened. Once the serial number lock bit is set,
no writes to the serial number registers are allowed. If the master
tries to perform a write operation to the serial number registers
Document #: 001- 65051 Rev. *B
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CY14ME064J
Device ID Read
Device ID is a 4 byte code consisting of JEDEC assigned manufacturer ID, product ID, density ID, and die revision. These registers
are set in factory and are read only registers for the user.
Table 6. Device ID
Bits
#of Bits
31 - 21
(11 bits)
20 - 7
(14 bits)
6- 3
(4 bits)
2 - 0
(3 bits)
Device
Manufacture ID
00000110100
00000110100
00000110100
00000110100
00000110100
00000110100
Product ID
Density ID
0001
Die Rev
000
CY14MB064J1
CY14MB064J2
CY14MB064J3
CY14ME064J1
CY14ME064J2
CY14ME064J3
00001001010001
00001101010001
00001101010101
00001001100001
00001101100001
00001101100101
0001
000
0001
000
0001
000
0001
000
0001
000
The device ID is divided into four parts as shown in Table 6:
1. Manufacturer ID (11 bits)
4. Die Rev (3 bits)
This is used to represent any major change in the design of the
product. The initial setting of this is always 0x0.
This is the JEDEC assigned manufacturer ID for Cypress.
JEDEC assigns the manufacturer ID in different banks. The first
three bits of the manufacturer ID represent the bank in which ID
is assigned. The next eight bits represent the manufacturer ID.
Executing Commands Using Command
Register
Cypress manufacturer ID is 0x34 in bank 0. Therefore the
manufacturer ID for all Cypress nvSRAM products is given as:
The Control Registers Slave allows different commands to be
executed by writing the specific command byte in the command
register (0xAA). The command byte codes for each command
are specified in Table 5. During the execution of these
commands the device is not accessible and returns NACK if any
of the two slave devices is selected. If an invalid command is sent
by the master, nvSRAM responds with a NACK indicating that
command was not successful. The address latch of this slave
continues to point to the command register address.
Cypress ID - 000_0011_0100
2. Product ID (14 bits)
The product ID for device is shown in the Table 6.
3. Density ID (4 bits)
The 4-bit density ID is used as shown in Table 6 for indicating the
64-Kb density of the product.
Figure 29. Command Execution using Command Register
S
T
A
R
T
S
T
O
P
Control Register
Slave Address
Command Register Address
Command Byte
By Master
SDA Line
1
A2 A1
A0
S
0
0
1
P
0
1
1
0
1
0
1
0
0
By nvSRAM
A
A
A
Document #: 001- 65051 Rev. *B
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Best Practices
nvSRAM products have been used effectively for over 26 years.
While ease-of-use is one of the product’s main system values,
experience gained working with hundreds of applications has
resulted in the following suggestions as best practices:
■ Power-up boot firmware routines should rewrite the nvSRAM
into the desired state (for example, AutoStore enabled). While
the nvSRAM is shipped in a preset state, best practice is to
again rewrite the nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently such as
program bugs and incoming inspection routines.
■ The nonvolatile cells in this nvSRAM product are delivered from
Cypress with 0x00 written in all cells. Incoming inspection
routines at customer or contract manufacturer’s sites
sometimes reprogram these values. Final NV patterns are
typically repeating patterns of AA, 55, 00, FF, A5, or 5A. End
product’s firmware should not assume an NV array is in a set
programmed state. Routines that check memory content
values to determine first time system configuration, cold or
warm boot status, and so on should always program a unique
NV pattern (that is, complex 4-byte pattern of 46 E6 49 53 hex
or more random bytes) as part of the final system
manufacturing test to ensure these system routines work
consistently.
■ The VCAP value specified in this data sheet includes a minimum
and a maximum value size. Best practice is to meet this
requirement and not exceed the maximum VCAP value because
the nvSRAM internal algorithm calculates VCAP charge and
discharge time based on this max VCAP value. Customers that
want to use a larger VCAP value to make sure there is extra store
charge and store time should discuss their VCAP size selection.
Document #: 001- 65051 Rev. *B
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Transient voltage (<20 ns) on
any pin to ground potential .................. –2.0 V to VCC + 2.0 V
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Package power dissipation
capability (TA = 25 °C) .................................................. 1.0 W
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
Surface mount lead soldering
temperature (3 seconds) .......................................... +260 C
DC output current (1 output at a time, 1 s duration). ... 15 mA
At 150 C ambient temperature....................... 1000 h
At 85 C ambient temperature..................... 20 Years
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Ambient temperature with
power applied ........................................... –55 C to +150 C
Latch up current..................................................... > 140 mA
Supply voltage on VCC relative to VSS
Operating Range
CY14MB064J: VCC = 2.7 V to 3.6 V ..–0.5 V to +4.1 V
CY14ME064J: VCC = 4.5 V to 5.5 V ..–0.5 V to +7.0 V
DC voltage applied to outputs
Ambient
Temperature
Product
Range
VCC
CY14MB064J Industrial –40 C to +85 C 2.7 V to 3.6 V
CY14ME064J 4.5 V to 5.5 V
in High Z state .....................................–0.5 V to VCC + 0.5 V
Input voltage........................................–0.5 V to VCC + 0.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
2.7
4.5
–
Typ[3]
3.0
5.0
–
Max
3.6
5.5
1
Unit
VCC
Power supply
CY14MB064J
CY14ME064J
V
V
ICC1
ICC2
ICC3
Average VCC current
fSCL = 3.4 MHz;
mA
Values obtained without output loads (IOUT = 0 mA)
Average VCC current
during STORE
All inputs don’t care, VCC = Max
Average current for duration tSTORE
–
–
–
–
2
1
mA
mA
Average VCC current fSCL All inputs cycling at CMOS levels.
= 100 kHz;
Values obtained without output loads (IOUT = 0 mA)
VCC = VCC (Typ), 25 °C
ICC4
ISB
Average VCAP current
during AutoStore cycle
All inputs don't care. Average current for duration
tSTORE
–
–
–
–
3
mA
VCC standby current
SCL > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after nonvolatile cycle is
complete. Inputs are static. fSCL = 0 MHz.
150
A
IZZ
Sleep mode current
tSLEEP time after SLEEP Instruction is Issued. All
inputs are static and configured at CMOS logic level.
–
–
–
–
8
A
A
A
[4]
IIX
Input current in each I/O
pin (except HSB)
–1
+1
+1
0.1 VCC < Vi < 0.9 VCCmax
Input current in each I/O
pin (for HSB)
–100
IOZ
Ci
Output leakage current
–1
–
–
–
+1
7
A
Capacitance for each I/O Capacitance measured across all input and output
pin signal pin and VSS
pF
.
Note
3. Typical values are at 25 °C, V = V (Typ). Not 100% tested.
CC
CC
4. Not applicable to WP, A2, A1 and A0 pins.
Document #: 001- 65051 Rev. *B
Page 19 of 31
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CY14MB064J
CY14ME064J
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter
Description
Input HIGH voltage
Input LOW voltage
Output LOW voltage
Test Conditions
Min
0.7 Vcc
– 0.5
0
Typ[3]
Max
Unit
V
VIH
VIL
–
–
–
–
–
–
VCC + 0.5
0.3 Vcc
V
VOL
IOL = 3 mA
0.4
–
V
[5]
Rin
Input resistance (WP, A2, For VIN = VIL (Max)
50
K
M
V
A1, A0)
For VIN = VIH (Max)
1
–
Vhys
Hysteresis of Schmitt
trigger inputs
0.05 VCC
–
VCAP
Storage capacitor
Between VCAP pin and VSS
42
47
180
F
Data Retention and Endurance
Parameter
Description
Min
20
Unit
Years
K
DATAR
NVC
Data retention
Nonvolatile STORE operations
1,000
Thermal Resistance
Parameter[6]
Description
Test Conditions
8-pin SOIC 16-pin SOIC
Unit
JA
Thermal resistance
(Junction to ambient)
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
101.08
56.68
C/W
JC
Thermal resistance
(Junction to case)
37.86
32.11
C/W
Notes
5. The input pull-down circuit is stronger (50 K) when the input voltage is below V and weak (1 M) when the input voltage is above V
.
IL
IH
6. These parameters are guaranteed by design and are not tested.
Document #: 001- 65051 Rev. *B
Page 20 of 31
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CY14MB064J
CY14ME064J
Figure 30. AC Test Loads and Waveforms
For 5.0 V (CY14ME064J)
5.0 V
For 3.0 V (CY14MB064J)
3.0 V
1.6 K
867
OUTPUT
OUTPUT
50 pF
100 pF
AC Test Conditions
Description
CY14MB064J
0 V to 3 V
10 ns
CY14ME064J
0 V to 5 V
10 ns
Input pulse levels
Input rise and fall times (10% - 90%)
Input and output timing reference levels
1.5 V
2.5 V
Document #: 001- 65051 Rev. *B
Page 21 of 31
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CY14MB064J
CY14ME064J
AC Switching Characteristics
3.4 MHz[7]
Min Max
1 MHz[7]
400 kHz[7]
Unit
Parameter
Description
Min
Max
1000
–
Min
–
Max
400
–
fSCL
Clock frequency, SCL
–
160
160
160
60
10
0
3400
–
–
250
250
500
260
100
0
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
tSU; STA
tHD;STA
tLOW
Setup time for Repeated START condition
Hold time for START condition
LOW period of the SCL
600
600
1300
600
100
0
–
–
–
–
–
–
tHIGH
HIGH period of the SCL
–
–
–
tSU;DATA
tHD;DATA
tDH
tr[8]
tf[8]
Data in setup time
–
–
–
Data hold time (In/Out)
–
–
–
Data out hold time
0
–
0
–
0
–
Rise time of SDA and SCL
Fall time of SDA and SCL
Setup time for STOP condition
Data output valid time
–
80
80
–
–
120
120
–
–
300
300
–
–
–
–
tSU;STO
tVD;DATA
tVD;ACK
160
–
250
–
600
–
130
130
80
–
400
400
120
–
900
900
300
–
ACK output valid time
–
–
–
[8]
tOF
Output fall time from VIH min to VILmax
Bus free time between STOP and next START condition
–
–
–
tBUF
tSP
0.3
–
0.5
–
1.3
–
Pulse width of spikes that must be suppressed by input
filter
5
50
50
Figure 31. Timing Diagram
SDA
SCL
t
r
t
f
t
t
t
BUF
SP
HD;STA
t
SU;DATA
t
LOW
t
t
t
f
r
HD;STA
t
t
t
t
SU;STA
SU;STO
HIGH
HD;DATA
S
S
Sr
P
Note
2
7. Bus Load (Cb) Considerations; Cb < 500 pF for I C clock frequency (SCL) 100/400/1000 kHz; Cb < 100 pF for SCL at 3.4 MHz.
8. These parameters are guaranteed by design and are not tested.
Document #: 001- 65051 Rev. *B
Page 22 of 31
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CY14MB064J
CY14ME064J
nvSRAM Specifications
Parameters
[9]
Description
Min
–
Max
20
Unit
ms
ms
ns
µs
V
t
t
t
t
Power-Up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
rise time
FA
[10]
–
8
STORE
[11]
–
25
DELAY
[12]
V
150
–
–
VCCRISE
CC
V
Low voltage trigger level
CY14MB064J
CY14ME064J
2.65
4.40
5
SWITCH
[12]
–
V
t
HSB high to nvSRAM active time
–
µs
V
LZHSB
[12]
HSB output disable voltage
–
1.9
500
20
V
HDIS
HHHD
WAKE
[12]
t
t
t
t
HSB HIGH active time
–
ns
ms
ms
µs
Time for nvSRAM to wake up from SLEEP mode
Time to enter low power mode after issuing SLEEP instruction
Time to enter into standby mode after issuing STOP condition
–
–
8
SLEEP
SB
–
100
Figure 32. AutoStore or Power-Up RECALL[13]
VCC
VSWITCH
VHDIS
10
10
tVCCRISE
tSTORE
tSTORE
Note
Note
tHHHD
tHHHD
14
14
Note
Note
HSB OUT
AutoStore
tDELAY
tLZHSB
tLZHSB
tDELAY
POWER-
UP
RECALL
tFA
tFA
Read & Write
Inhibited
(RWI)
Read & Write
Read & Write
POWER-UP
RECALL
BROWN
OUT
AutoStore
POWER
DOWN
AutoStore
POWER-UP
RECALL
Notes
9.
10. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
t
starts from the time V rises above V
CC SWITCH.
FA
11. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time t
12. These parameters are guaranteed by design and are not tested.
.
DELAY
13. Read and Write cycles are ignored during STORE, RECALL, and while V is below V
CC
SWITCH.
14. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
Document #: 001- 65051 Rev. *B
Page 23 of 31
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CY14MB064J
CY14ME064J
Software Controlled STORE/RECALL Cycles
CY14MX064J
Parameter
Description
Unit
Min
–
Max
600
500
tRECALL
RECALL duration
Software sequence processing time
µs
µs
[15, 16]
–
tSS
Figure 33. Software STORE/RECALL Cycle[16]
DATA OUTPUT
BY MASTER
Command Reg Address
acknowledge (A) by Slave
Command Byte (STORE/RECALL)
nvSRAM Control Slave Address
acknowledge (A) by Slave
acknowledge (A) by Slave
SCL FROM
MASTER
2
8
9
1
2
8
9
1
2
8
9
1
S
P
START
STOP
condition
condition
RWI
t
t
/
STORE
RECALL
Figure 34. AutoStore Enable/Disable Cycle
DATA OUTPUT
BY MASTER
Command Reg Address
acknowledge (A) by Slave
Command Byte (ASENB/ASDISB)
nvSRAM Control Slave Address
acknowledge (A) by Slave
acknowledge (A) by Slave
SCL FROM
MASTER
2
8
9
1
2
8
9
1
2
8
9
1
S
P
START
STOP
condition
condition
RWI
t
SS
Notes
15. This is the amount of time it takes to take action on a soft sequence command. V power must remain HIGH to effectively register command.
CC
16. Commands such as STORE and RECALL lock out IO until operation is complete which further increases this time. See the specific command.
Document #: 001- 65051 Rev. *B
Page 24 of 31
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CY14MB064J
CY14ME064J
Hardware STORE Cycle
CY14MX064J
Parameter
Description
Hardware STORE pulse width
Unit
Max
Min
tPHSB
15
–
ns
Figure 35. Hardware STORE Cycle[17]
Write Latch set
t
PHSB
HSB (IN)
t
STORE
t
t
HHHD
DELAY
HSB (OUT)
RWI
t
LZHSB
Write Latch not set
t
PHSB
HSB (IN)
HSB pin is driven HIGH to V
only by Internal
CC
100 K: resistor, HSB driver is disabled
SRAM is disabled as long as HSB (IN) is driven LOW.
HSB (OUT)
RWI
t
DELAY
Note
17. If an SRAM write has not taken place since the last nonvolatile cycle, AutoStore or Hardware STORE is not initiated.
Document #: 001- 65051 Rev. *B
Page 25 of 31
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CY14MB064J
CY14ME064J
Ordering Information
Ordering Code
CY14MB064J1-SXIT
CY14MB064J1-SXI
CY14MB064J2-SXIT
CY14MB064J2-SXI
CY14ME064J1-SXIT
CY14ME064J1-SXI
CY14ME064J2-SXIT
CY14ME064J2-SXI
Package Diagram
Package Type
Operating Range
51-85066
8-pin SOIC (without VCAP
)
)
Industrial
8-pin SOIC (without VCAP
8-pin SOIC (with VCAP
8-pin SOIC (with VCAP
)
)
8-pin SOIC (without VCAP
)
)
8-pin SOIC (without VCAP
8-pin SOIC (with VCAP
8-pin SOIC (with VCAP
)
)
All these parts are Pb-free. This table contains Final information. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 14 M B 064 J 2 - S X I T
Option:
T - Tape and Reel
Blank - Std.
Temperature:
I - Industrial (–40 to 85 °C)
Pb-free
Package:
S - 8-pin SOIC
1 - Without VCAP
2 - With VCAP
SF - 16-pin SOIC
3 - With VCAP and HSB
J - Serial (I2C) nvSRAM
Density:
064 - 64 Kb
Voltage:
B - 3.0 V
E - 5.0 V
Metering
14 - nvSRAM
Cypress
Document #: 001- 65051 Rev. *B
Page 26 of 31
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CY14MB064J
CY14ME064J
Package Diagrams
Figure 36. 8-pin (150 mil) SOIC Package, 51-85066
51-85066 *D
Document #: 001- 65051 Rev. *B
Page 27 of 31
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CY14MB064J
CY14ME064J
Package Diagrams (continued)
Figure 37. 16-pin (300 mil) SOIC, 51-85022
51-85022 *C
Document #: 001- 65051 Rev. *B
Page 28 of 31
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CY14MB064J
CY14ME064J
Acronyms
Document Conventions
Units of Measure
Acronym
ACK
Description
Acknowledge
Symbol
Unit of Measure
CMOS
CRC
Complementary Metal Oxide Semiconductor
Cyclic Redundancy Check
Electronic Industries Alliance
Inter-Integrated Circuit Bus
Input/Output
°C
degrees Celsius
Hertz
Hz
kbit
kHz
K
A
mA
F
MHz
s
EIA
I2C
1024 bits
kilo Hertz
I/O
kilo ohms
JEDEC
nvSRAM
NACK
RWI
Joint Electron Devices Engineering Council
nonvolatile Static Random Access Memory
No acknowledge
micro Amperes
milli Ampere
micro Farad
mega Hertz
micro seconds
milli seconds
nano seconds
pico Farad
Volts
Read and Write Inhibited
Restriction of Hazardous Substances
Serial Number Lock
RoHS
SNL
ms
ns
SCL
Serial Clock Line
SDA
Serial Data Line
pF
V
SOIC
WP
Small Outline Integrated Circuit
Write protect
ohms
W
Watts
Document #: 001- 65051 Rev. *B
Page 29 of 31
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CY14MB064J
CY14ME064J
Document History Page
Document Title: CY14MB064J, CY14ME064J, 64-Kbit (8 K × 8) Serial (I2C) nvSRAM
Document Number: 001-65051
Submission
Date
Orig. of
Change
Rev.
ECN No.
Description of Change
**
3088565
3201457
11/17/2010
03/17/2011
GVCH
GVCH
New datasheet
*A
Updated Configuration (Added Slave Address information).
Updated Pin Definitions (Added Note 2).
Updated AutoStore Operation (description).
Updated Hardware STORE and HSB pin Operation. (Added more clarity on
HSB pin operation).
Updated Table 6 (Product ID column).
Updated DC Electrical Characteristics (Added Note 4).
Updated nvSRAM Specifications (description of tLZHSB parameter).
Fixed typo error in Figure 32.
Updated Ordering Code Definitions
Updated in new template.
*B
3248609
05/06/2011
GVCH
Datasheet status changed from “Preliminary to “Final”
Updated Ordering Information
Document #: 001- 65051 Rev. *B
Page 30 of 31
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CY14MB064J
CY14ME064J
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
cypress.com/go/automotive
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Interface
psoc.cypress.com/solutions
PSoC 1 | PSoC 3 | PSoC 5
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Touch Sensing
USB Controllers
Wireless/RF
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© Cypress Semiconductor Corporation, 2010-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001- 65051 Rev. *B
Revised May 6, 2011
Page 31 of 31
All products and company names mentioned in this document may be the trademarks of their respective holders.
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