AM29LV400B-120WAC [CYPRESS]
Flash Memory;
| 型号： | AM29LV400B-120WAC |
| 厂家： | 
CYPRESS |
| 描述： | Flash Memory 内存集成电路 |
| 文件： | 总40页 (文件大小：519K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Top or bottom boot block configurations
available
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■ Embedded Algorithms
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ High performance
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
— Full voltage range: access times as fast as 100
ns
■ Typical 1,000,000 write cycles per sector
— Regulated voltage range: access times as fast
as 90 ns
(100,000 cycles minimum guaranteed)
■ Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
■ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 10 mA read current
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— 20 mA program/erase current
■ Flexible sector architecture
— Superior inadvertent write protection
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
■ Ready/Busy# pin (RY/BY#)
— Supports full chip erase
— Provides a hardware method of detecting
program or erase cycle completion
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Sectors can be locked via programming
equipment
■ Hardware reset pin (RESET#)
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
— Hardware method to reset the device to reading
array data
Publication# 20514 Rev: C Amendment/+2
Issue Date: July 1998
P R E L I M I N A R Y
GENERAL DESCRIPTION
The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash
memory organized as 524,288 bytes or 262,144 words.
The device is offered in 48-ball FBGA, 44-pin SO, and
48-pin TSOP packages. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to be
programmed in-system using only a single 3.0 volt VCC
supply. No VPP is required for write or erase opera-
tions. The device can also be programmed in standard
EPROM programmers.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
The standard device offers access times of 90, 100,
120, and 150 ns, allowing high speed microprocessors
to operate without wait states. To eliminate bus conten-
tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
Hardware data protection measures include a low
detector that automatically inhibits write opera-
VCC
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed) be-
fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
Am29LV400
2
P R E L I M I N A R Y
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV400
Regulated Voltage Range: V =3.0–3.6 V
-90R
CC
Speed Options
Max access time, ns (t
Full Voltage Range: V = 2.7–3.6 V
-100
-120
120
120
40
-150
150
150
55
CC
)
90
90
40
100
100
40
ACC
Max CE# access time, ns (t
)
CE
Max OE# access time, ns (t
)
OE
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
V
CC
Sector Switches
V
SS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
Y-Gating
STB
V
Detector
Timer
CC
Cell Matrix
X-Decoder
A0–A17
20514C-1
3
Am29LV400
P R E L I M I N A R Y
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DQ12
DQ4
VCC
WE#
RESET#
NC
NC
RY/BY#
NC
Standard TSOP
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
48
A16
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Reverse TSOP
OE#
VSS
CE#
A0
A3
A2
A1
20514C-2
Am29LV400
4
P R E L I M I N A R Y
CONNECTION DIAGRAMS
NC
RY/BY#
A17
A7
1
2
3
4
5
6
7
8
9
44 RESET#
43 WE#
42 A8
41 A9
A6
40 A10
A5
39 A11
A4
38 A12
A3
37 A13
A2
36 A14
A1 10
A0 11
CE# 12
VSS 13
35 A15
34 A16
SO
33 BYTE#
32 VSS
OE# 14
DQ0 15
DQ8 16
DQ1 17
DQ9 18
DQ2 19
DQ10 20
DQ3 21
DQ11 22
31 DQ15/A-1
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
FBGA
Bump Side (Bottom) View
A1
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
A3
CE#
OE#
VSS
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
H2
A17
DQ0
DQ8
DQ9
DQ1
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
NC
NC
DQ2
DQ10
DQ11
DQ3
A4
B4
C4
D4
E4
F4
G4
H4
WE# RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A10
A11
DQ7
DQ14
DQ13
DQ6
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE# DQ15/A-1 VSS
20514C-3
5
Am29LV400
P R E L I M I N A R Y
Flash memory devices in FBGA packages may be
Special Handling Instructions for Fine
PItch Ball Grid Array (FBGA)
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be
compromised if the package body is exposed to
temperatures above 150°C for prolonged periods of
time.
Special handling is required for Flash Memory products
in FBGA packages.
PIN CONFIGURATION
LOGIC SYMBOL
A0–A17
= 18 addresses
18
DQ0–DQ14 = 15 data inputs/outputs
A0–A17
16 or 8
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
DQ0–DQ15
(A-1)
BYTE#
CE#
=
=
=
=
=
=
=
Selects 8-bit or 16-bit mode
Chip enable
CE#
OE#
OE#
Output enable
WE#
WE#
Write enable
RESET#
BYTE#
RESET#
RY/BY#
VCC
Hardware reset pin, active low
Ready/Busy# output
RY/BY#
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
20514C-4
VSS
NC
=
=
Device ground
Pin not connected internally
Am29LV400
6
P R E L I M I N A R Y
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Am29LV400
T
90R
E
C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E
=
48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
F
=
48-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR048)
S
=
=
44-Pin Small Outline Package (SO 044)
WA
48-ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 8 mm package
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
B = Bottom Sector
DEVICE NUMBER/DESCRIPTION
Am29LV400
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations
EC, EI, FC,
Valid Combinations list configurations planned to be sup-
Am29LV400T90R,
Am29LV400B90R
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
FI, SC, SI, WAC
Am29LV400T100,
Am29LV400B100
EC, EI, EE,
FC, FI, FE,
SC, SI, SE,
Am29LV400T120,
Am29LV400B120
WAC, WAI, WAE
Am29LV400T150,
Am29LV400B150
7
Am29LV400
P R E L I M I N A R Y
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location.
The register is composed of latches that store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1. Am29LV400 Device Bus Operations
DQ8–DQ15
Addresses
(See Note)
DQ0– BYTE# BYTE#
Operation
CE# OE# WE# RESET#
DQ7
= V
= V
IL
IH
Read
L
L
H
H
A
D
D
OUT
IN
IN
OUT
DQ8–DQ14 = High-Z,
DQ15 = A-1
Write
L
H
L
H
A
D
D
IN
IN
V
0.3 V
±
V
0.3 V
±
CC
CC
Standby
X
X
X
High-Z High-Z
High-Z
Output Disable
Reset
L
X
X
H
X
X
H
X
X
H
L
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
High-Z
Temporary Sector Unprotect
V
A
D
D
IN
ID
IN
IN
Legend:
L = Logic Low = V , H = Logic High = V , V = 12.0 ± 0.5 V, X = Don’t Care, A = Addresses In, D = Data In, D = Data Out
IL
IH ID
IN
IN
OUT
Note: Addresses are A17:A0 in word mode (BYTE# = V ), A17:A-1 in byte mode (BYTE# = V ).
IH
IL
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. The device remains enabled for
read access until the command register contents are
altered.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and control-
led by CE# and OE#.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 12 for the timing diagram. ICC1 in
the DC Characteristics table represents the active cur-
rent specification for reading array data.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are ac-
tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or
bytes.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more in-
formation.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector ad-
dress” consists of the address bits required to uniquely
select a sector. The “Command Definitions” section
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory con-
tent occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
Am29LV400
8
P R E L I M I N A R Y
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses remain stable for
tACC + 30 ns. The automatic sleep mode is
independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new
data when addresses are changed. While in sleep
mode, output data is latched and always available to
the system. ICC4 in the DC Characteristics table
represents the automatic sleep mode current
specification.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.
ICC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris-
tics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
ternal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algo-
rithms). The system can read data tRH after the RE-
SET# pin returns to VIH.
V
CC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires
standard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 13 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
9
Am29LV400
P R E L I M I N A R Y
Table 2. Am29LV400T Top Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
A17
0
A16
0
A15
0
A14
X
X
X
X
X
X
X
0
A13
X
A12
X
Kwords)
Address Range
Address Range
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–77FFFh
78000h–79FFFh
7A000h–7BFFFh
7C000h–7FFFFh
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3BFFFh
3C000h–3CFFFh
3D000h–3DFFFh
3E000h–3FFFFh
0
0
1
X
X
0
1
0
X
X
0
1
1
X
X
1
0
0
X
X
1
0
1
X
X
1
1
0
X
X
1
1
1
X
X
1
1
1
1
0
0
1
1
1
1
0
1
8/4
1
1
1
1
1
X
16/8
Table 3. Am29LV400B Bottom Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
A17
0
A16
0
A15
0
A14
0
A13
0
A12
X
Kwords)
Address Range
Address Range
16/8
8/4
00000h–03FFFh
04000h–05FFFh
06000h–07FFFh
08000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
00000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
0
0
0
0
1
0
0
0
0
0
1
1
8/4
0
0
0
1
X
X
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
0
0
1
X
X
X
X
X
X
X
X
X
0
1
0
X
X
0
1
1
X
X
1
0
0
X
X
1
0
1
X
X
1
1
0
X
X
1
1
1
X
X
Note for Tables 2 and 3: Address range is A17:A-1 in byte mode and A171:A0 in word mode. See “Word/Byte Configuration”
section for more information.
Am29LV400
10
P R E L I M I N A R Y
Table 4. In addition, when verifying sector protection,
Autoselect Mode
the sector address must appear on the appropriate
highest order address bits (see Tables 2 and 3). Table
4 shows the remaining address bits that are don’t care.
When all necessary bits have been set as required, the
programming equipment may then read the corre-
sponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and de-
vice identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 4. Am29LV400 Autoselect Codes (High Voltage Method)
A17 A11
to to
Mode CE# OE# WE# A12 A10 A9
A8
to
A7
A5
to
A2
DQ8
to
A0 DQ15
DQ7
to
DQ0
Description
A6
A1
Manufacturer ID: AMD
L
L
L
L
H
H
X
X
V
X
L
X
L
L
X
01h
B9h
ID
Device ID:
Am29LV400
(Top Boot Block)
Word
Byte
22h
X
X
V
X
L
L
X
L
L
H
ID
L
L
L
L
H
H
X
B9h
BAh
Device ID:
Am29LV400
(Bottom Boot
Block)
Word
22h
X
X
X
V
V
X
X
X
X
H
L
ID
Byte
L
L
H
X
BAh
01h
(protected)
X
X
Sector Protection Verification
L
L
H
SA
L
H
ID
00h
(unprotected)
L = Logic Low = V , H = Logic High = V , SA = Sector Address, X = Don’t care.
IL
IH
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both pro-
gram and erase operations in previously protected
sectors.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RE-
SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 21 shows the timing diagrams, for this feature.
Sector protection/unprotection is implemented using
programming equipment, and requires VID on address
pin A9 and OE#. Publication number 20873 contains
further details; contact an AMD representative to re-
quest a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
11
Am29LV400
P R E L I M I N A R Y
against inadvertent writes (refer to Table 5 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
START
RESET# = V
(Note 1)
ID
Low V
Write Inhibit
CC
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
Perform Erase or
Program Operations
RESET# = V
IH
tional writes when VCC is greater than VLKO
.
Temporary Sector
Unprotect Completed
(Note 2)
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
20514C-5
Logical Inhibit
Notes:
1. All protected sectors unprotected.
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
2. All previously protected sectors are protected once
again.
Power-Up Write Inhibit
Figure 1. Temporary Sector Unprotect Operation
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
Am29LV400
12
P R E L I M I N A R Y
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 5 defines the valid register command
sequences. Writing incorrect address and data val-
ues or writing them in the improper sequence resets
the device to reading array data.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
See “AC Characteristics” for parameters, and to Figure
13 for the timing diagram.
Autoselect Command Sequence
Reading Array Data
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires VID
on address bit A9.
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See “Erase Sus-
pend/Erase Resume Commands” for more information
on this mode.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect com-
mand. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code. A
read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode) re-
turns 01h if that sector is protected, or 00h if it is unpro-
tected. Refer to Tables 2 and 3 for valid sector
addresses.
The system must issue the reset command to re-ena-
ble the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com-
mand” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Figure 12 shows the timing diagram.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or tim-
ings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table
5 shows the address and data requirements for the
byte program command sequence.
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
13
Am29LV400
P R E L I M I N A R Y
Any commands written to the device during the Em-
Chip Erase Command Sequence
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program-
ming operation. The Byte Program command se-
quence should be reinitiated once the device has reset
to reading array data, to ensure data integrity.
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Figure 2 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 16 for
timing diagrams.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately ter-
minates the operation. The Chip Erase command se-
quence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
The system can determine the status of the erase op-
eration by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these sta-
tus bits. When the Embedded Erase algorithm is com-
plete, the device returns to reading array data and
addresses are no longer latched.
START
Write Program
Command Sequence
Figure 3 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.
Data Poll
from System
Embedded
Program
algorithm
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock write cycles are then followed by the ad-
dress of the sector to be erased, and the sector erase
command. Table 5 shows the address and data re-
quirements for the sector erase command sequence.
in progress
Verify Data?
No
Yes
No
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
Increment Address
Last Address?
Yes
Programming
Completed
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time be-
tween these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
20514C-6
Note: See Table 5 for program command sequence.
Figure 2. Program Operation
Am29LV400
14
P R E L I M I N A R Y
ensure all commands are accepted. The interrupts can
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence
and any additional sector addresses and commands.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the op-
eration. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. (Refer to “Write Operation Status” for informa-
tion on these status bits.)
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine the
status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.
Figure 3 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 17 for timing diagrams.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
15
Am29LV400
P R E L I M I N A R Y
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
20514C-7
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3. Erase Operation
Am29LV400
16
P R E L I M I N A R Y
Table 5. Am29LV400 Command Definitions
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Sixth
Addr Data Addr Data
Data Addr Data Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
RD
F0
Word
Byte
Word
Byte
Word
Byte
2AA
555
2AA
555
2AA
555
555
AAA
555
Manufacturer ID
4
4
4
AA
AA
AA
55
55
55
90
90
90
X00
01
AAA
555
X01 22B9
X02
B9
X01 22BA
Device ID,
Top Boot Block
AAA
555
AAA
555
Device ID,
Bottom Boot Block
AAA
AAA
X02
BA
XX00
XX01
00
(SA)
X02
Word
Byte
555
2AA
555
555
Sector Protect Verify
(Note 9)
4
AA
55
90
(SA)
X04
AAA
AAA
01
Word
Byte
Word
Byte
Word
Byte
555
AAA
555
2AA
555
2AA
555
2AA
555
555
AAA
555
Program
4
6
6
AA
AA
AA
55
55
55
A0
80
80
PA
PD
AA
AA
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
55
55
10
30
AAA
555
AAA
555
AAA
Sector Erase
SA
AAA
XXX
XXX
AAA
AAA
Erase Suspend (Note 10)
Erase Resume (Note 11)
1
1
B0
30
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
RA = Address of the memory location to be read.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations.
8. The fourth cycle of the autoselect command sequence is a
read cycle.
2. All values are in hexadecimal.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
5. Address bits A17–A11 are don’t cares for unlock and
command cycles, except when SA or PA required.
6. No unlock or command cycles required when reading array
data.
11. The Erase Resume command is valid only during the Erase
Suspend mode.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
17
Am29LV400
P R E L I M I N A R Y
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 and the following subsections de-
scribe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 4 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
Read DQ7–DQ0
Addr = VA
The Data# Polling bit, DQ7, indicates to the host sys-
tem whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command se-
quence.
Yes
DQ7 = Data?
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to pro-
gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for ap-
proximately 1 µs, then the device returns to reading
array data.
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase al-
gorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in-
formation on DQ7.
Yes
DQ7 = Data?
No
PASS
FAIL
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the de-
vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
20514C-8
following read cycles. This is because DQ7
DQ0 on the
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 18, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.
Figure 4. Data# Polling Algorithm
Am29LV400
18
P R E L I M I N A R Y
Table 6 shows the outputs for Toggle Bit I on DQ6. Fig-
RY/BY#: Ready/Busy#
ure 5 shows the toggle bit algorithm. Figure 19 in the
“AC Characteristics” section shows the toggle bit timing
diagrams. Figure 20 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsec-
tion on DQ2: Toggle Bit II.
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
DQ2: Toggle Bit II
pull-up resistor to VCC
.
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 6 shows the outputs for RY/BY#. Figures 13, 16
and 17 shows RY/BY# for reset, program, and erase
operations, respectively.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for eras-
ure. (The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish whether
the sector is actively erasing or is erase-suspended.
DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and mode
information. Refer to Table 6 to compare outputs for
DQ2 and DQ6.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op-
eration), and during the sector erase time-out.
Figure 5 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 19 shows the toggle bit timing diagram. Figure
20 shows the differences between DQ2 and DQ6 in
graphical form.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE#
to control the read cycles. When the operation is com-
plete, DQ6 stops toggling.
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected sec-
tors, and ignores the selected sectors that are
protected.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 5 for the following discussion. When-
ever the system initially begins reading toggle bit sta-
tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has com-
pleted the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read cy-
cle.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that
is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system
must write the reset command to return to reading
array data.
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
19
Am29LV400
P R E L I M I N A R Y
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, de-
termining the status as described in the previous para-
graph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 5).
START
Read DQ7–DQ0
(Note 1)
Read DQ7–DQ0
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
No
Toggle Bit
= Toggle?
Yes
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has ex-
ceeded the timing limits, DQ5 produces a “1.”
No
DQ5 = 1?
Yes
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
(Notes
1, 2)
Read DQ7–DQ0
Twice
DQ3: Sector Erase Timer
Toggle Bit
= Toggle?
No
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence” sec-
tion.
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device has ac-
cepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has be-
gun; all further commands (other than Erase Suspend)
are ignored until the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been ac-
cepted. Table 6 shows the outputs for DQ3.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1” . See text.
20514C-9
Figure 5. Toggle Bit Algorithm
Am29LV400
20
P R E L I M I N A R Y
Table 6. Write Operation Status
DQ7
DQ5
DQ2
Operation
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Erase
Suspend Reading within Non-Erase
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Mode
Suspended Sector
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
21
Am29LV400
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
–2.0 V
VCC (Note 1) . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
All other pins (Note 1) . . . . . –0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
20514C-10
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may undershoot V
to –2.0 V for periods of up to 20 ns. See Figure 6.
Figure 6. Maximum Negative Overshoot
Waveform
SS
Maximum DC voltage on input or I/O pins is V +0.5 V.
CC
During voltage transitions, input or I/O pins may overshoot
to V +2.0 V for periods up to 20 ns. See Figure 7.
CC
20 ns
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
V
CC
RESET# may undershoot V to –2.0 V for periods of up
SS
+2.0 V
V
+0.5 V
to 20 ns. See Figure 6. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.
CC
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
20514C-11
Figure 7. Maximum Positive Overshoot
Waveform
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range. . . . .+3.0 V to +3.6 V
VCC for full voltage range . . . . . . . . . .+2.7 V to +3.6 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
Am29LV400
22
P R E L I M I N A R Y
Test Conditions
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Min
Typ
Max
±1.0
35
Unit
µA
V
V
= V to V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
CC
OUT
SS
I
±1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
5 MHz
1 MHz
10
2
16
4
CE# = V OE#
Byte Mode
V
IL,
=
=
IH,
IH,
V
Active Read Current
CC
I
mA
CC1
(Note 1)
9
16
4
CE# = V OE#
V
IL,
Word Mode
2
V
Active Write Current
CC
I
I
I
I
CE# = V OE#
V
20
0.2
0.2
0.2
30
5
mA
µA
µA
µA
CC2
CC3
CC4
CC5
IL,
=
IH
(Notes 2 and 4)
V
= V
;
CC max
CC
V
V
Standby Current
Reset Current
CC
CE#, RESET# = V ±0.3 V
CC
V
= V
;
CC max
CC
5
CC
RESET# = V ± 0.3 V
SS
V
V
= V ± 0.3 V;
CC
IH
IL
Automatic Sleep Mode (Note 3)
5
= V ± 0.3 V
SS
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
V
0.7 x V
V
+ 0.3
IH
CC
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
CC min
V
V
OL
OL
OH
OH
CC
V
= –2.0 mA, V = V
0.85 V
OH1
OH2
CC
CC min
CC min
CC
Output High Voltage
V
= –100 µA, V = V
V
–0.4
CC
CC
Low V Lock-Out Voltage
(Note 4)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.
CC
IH
CC
2. I active while Embedded Erase or Embedded Program is in progress.
CC
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
4. Not 100% tested.
+ 30 ns.
ACC
23
Am29LV400
P R E L I M I N A R Y
DC CHARACTERISTICS (Continued)
Zero Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
20514C-12
Figure 8. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
15
10
5
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
20514C-13
Figure 9. Typical ICC1 vs. Frequency
Am29LV400
24
P R E L I M I N A R Y
TEST CONDITIONS
Table 7. Test Specifications
3.3 V
-90R,
-100
-120,
-150
Test Condition
Output Load
Unit
2.7 kΩ
Device
Under
Test
1 TTL gate
Output Load Capacitance, C
(including jig capacitance)
L
30
100
pF
C
L
6.2 kΩ
Input Rise and Fall Times
Input Pulse Levels
5
0.0–3.0
ns
V
Input timing measurement
reference levels
1.5
1.5
V
V
Note: Diodes are IN3064 or equivalent
Output timing measurement
reference levels
20514C-14
Figure 10. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
0.0 V
1.5 V
1.5 V
Input
Measurement Level
Output
20514C-15
Figure 11. Input Waveforms and Measurement Levels
25
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
Read Operations
Parameter
Speed Option
JEDEC
Std Description
Test Setup
Min
-90R -100 -120 -150 Unit
t
t
Read Cycle Time (Note 1)
Address to Output Delay
90
90
100
100
120
120
150
150
ns
ns
AVAV
RC
CE# = V
IL
IL
t
t
Max
AVQV
ACC
OE# = V
t
t
t
Chip Enable to Output Delay
OE# = V
Max
Max
Max
Max
Min
90
40
30
30
100
40
120
50
150
55
ns
ns
ns
ns
ns
ELQV
GLQV
EHQZ
GHQZ
CE
IL
t
t
Output Enable to Output Delay
OE
t
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
30
30
40
DF
DF
t
t
30
30
40
Read
0
Output Enable
t
OEH
Toggle and
Data# Polling
Hold Time (Note 1)
Min
Min
10
ns
ns
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
t
t
0
AXQX
OH
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 7 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
20514C-16
Figure 12. Read Operations Timings
Am29LV400
26
P R E L I M I N A R Y
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std Description
RESET# Pin Low (During Embedded
Test Setup
Max
All Speed Options
Unit
t
t
20
µs
READY
Algorithms) to Read or Write (See Note)
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
READY
t
t
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
RP
RESET# High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
RH
t
RPD
t
RB
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
20514C-17
Figure 13. RESET# Timings
27
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Std.
Description
-90R
-100
-120
-150
Unit
ns
t
t
t
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
ELFL/ ELFH
30
90
30
30
40
ns
FLQZ
FHQV
100
120
150
ns
CE#
OE#
BYTE#
t
ELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
DQ0–DQ14
DQ15/A-1
Switching
from word
to byte
Address
Input
DQ15
Output
mode
t
FLQZ
t
ELFH
BYTE#
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
DQ15/A-1
mode
Address
Input
DQ15
Output
t
FHQV
20514C-18
Figure 14. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
t
SET
(t
)
AS
t
(t
)
HOLD AH
Note: Refer to the Erase/Program Operations table for t and t specifications.
AS
AH
20514C-19
Figure 15. BYTE# Timings for Write Operations
Am29LV400
28
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase/Program Operations
Parameter
JEDEC
Std.
Description
-90R
-100
-120
-150
Unit
ns
t
t
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
90
100
120
150
AVAV
WC
t
t
Min
Min
Min
Min
Min
0
ns
AVWL
WLAX
AS
AH
DS
DH
t
t
50
50
50
50
50
50
65
65
ns
t
t
t
ns
DVWH
WHDX
t
Data Hold Time
0
0
ns
t
Output Enable Setup Time
ns
OES
Read Recovery Time Before Write
(OE# High to WE# Low)
t
t
Min
0
ns
GHWL
GHWL
t
t
t
CE# Setup Time
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
Min
0
0
ns
ns
ns
ns
ELWL
WHEH
WLWH
WHWL
CS
CH
WP
t
t
CE# Hold Time
t
Write Pulse Width
Write Pulse Width High
50
30
50
30
50
30
65
35
t
t
WPH
Byte
9
11
0.7
50
0
t
t
t
t
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
µs
WHWH1
WHWH2
WHWH1
Word
sec
µs
WHWH2
t
V
Setup Time (Note 1)
VCS
CC
t
Recovery Time from RY/BY#
ns
RB
t
Program/Erase Valid to RY/BY# Delay
90
ns
BUSY
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
29
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tGHWL
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, D
is the true data at the program address.
OUT
2. Illustration shows device in word mode.
20514C-20
Figure 16. Program Operation Timings
Am29LV400
30
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tGHWL
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
20514C-21
Figure 17. Chip/Sector Erase Operation Timings
31
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
tRC
VA
Addresses
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
Status Data
True
DQ0–DQ6
Valid Data
Status Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
20514C-22
Figure 18. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
RY/BY#
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
20514C-23
Figure 19. Toggle Bit Timings (During Embedded Algorithms)
Am29LV400
32
P R E L I M I N A R Y
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
20514C-24
Figure 20. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std.
Description
Rise and Fall Time (See Note)
All Speed Options
Unit
t
V
Min
Min
500
ns
VIDR
ID
RESET# Setup Time for Temporary Sector
Unprotect
t
4
µs
RSP
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
20514C-25
Figure 21. Temporary Sector Unprotect Timing Diagram
33
Am29LV400
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Std.
Description
-90R
-100
-120
-150
Unit
ns
t
t
t
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
90
100
120
150
AVAV
AVEL
ELAX
DVEH
EHDX
WC
t
0
ns
AS
AH
DS
DH
t
t
50
50
50
50
50
50
65
65
ns
t
t
t
ns
t
Data Hold Time
0
0
ns
t
Output Enable Setup Time
ns
OES
Read Recovery Time Before Write
(OE# High to WE# Low)
t
t
t
Min
0
ns
GHEL
WLEL
GHEL
t
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
0
0
ns
ns
ns
ns
WS
t
t
EHWH
WH
t
t
CE# Pulse Width
CE# Pulse Width High
50
30
50
30
50
30
65
35
ELEH
EHEL
CP
t
t
CPH
Byte
Word
9
Programming Operation
(Note 2)
t
t
t
t
µs
WHWH1
WHWH1
11
0.7
Sector Erase Operation (Note 2)
sec
WHWH2
WHWH2
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29LV400
34
P R E L I M I N A R Y
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
device.
= data written to the
OUT
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
20514C-26
Figure 22. Alternate CE# Controlled Write Operation Timings
35
Am29LV400
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
s
Comments
Sector Erase Time
Chip Erase Time
0.7
11
9
15
Excludes 00h programming
prior to erasure (Note 4)
s
Byte Programming Time
Word Programming Time
300
360
13.5
8.7
µs
µs
s
11
4.5
2.9
Excludes system level
overhead (Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 3)
s
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V , 100,000 cycles. Additionally,
CC
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V = 2.7 V, 100,000 cycles.
CC
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaranteed.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to V on all pins except I/O pins
(including A9, OE#, and RESET#)
SS
–1.0 V
12.5 V
Input voltage with respect to V on all I/O pins
–1.0 V
V
+ 1.0 V
CC
SS
V
Current
–100 mA
+100 mA
CC
Includes all pins except V . Test conditions: V = 3.0 V, one pin at a time.
CC
CC
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Input Capacitance
Test Setup
Typ
6
Max
7.5
12
Unit
pF
C
V
= 0
IN
IN
C
Output Capacitance
Control Pin Capacitance
V
= 0
8.5
7.5
pF
OUT
OUT
C
V
= 0
IN
9
pF
IN2
Notes:
1. Sampled, not 100% tested.
2. Test conditions T = 25°C, f = 1.0 MHz.
A
DATA RETENTION
Parameter
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
Am29LV400
36
P R E L I M I N A R Y
PHYSICAL DIMENSIONS*
TS 048—48-Pin Standard TSOP (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1
48
11.90
12.10
0.50 BSC
24
25
0.05
0.15
18.30
18.50
19.80
20.20
16-038-TS48-2
TS 048
DT95
0.08
0.20
0.10
1.20
MAX
8-8-96 lv
0.21
0˚
5˚
0.25MM (0.0098") BSC
0.50
0.70
* For reference only. BSC is an ANSI standard for Basic Space Centering.
TSR048—48-Pin Reverse TSOP (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1
48
11.90
12.10
0.50 BSC
24
25
0.05
0.15
18.30
18.50
19.80
20.20
SEATING PLANE
16-038-TS48
TSR048
DT95
0.08
0.20
8-8-96 lv
1.20
MAX
0.10
0.21
0˚
5˚
0.25MM (0.0098") BSC
0.50
0.70
* For reference only. BSC is an ANSI standard for Basic Space Centering.
37 Am29LV400
P R E L I M I N A R Y
PHYSICAL DIMENSIONS
8 x 6 Fine-Pitch Ball Grid Array (FBGA) (measured in millimeters)
M
0.15
Z B M
7.80
8.20
DATUM B
5.80
6.20
M
0.15
Z B M
0.025
CHAMFER
INDEX
DATUM A
5.60
BSC
0.40
4.00
BSC
0.80
0.40 ± 0.08 (48x)
0.08 M Z A
0.40
B
0.10 Z
0.25
0.45
DETAIL A
0.20 Z
1.20 MAX
DETAIL A
16-038-FGA-2
EG137
12-2-97 lv
Am29LV400
38
P R E L I M I N A R Y
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package (measured in millimeters)
44
23
13.10
13.50
15.70
16.30
1
22
1.27 NOM.
TOP VIEW
28.00
28.40
0.10
0.21
2.17
2.45
2.80
MAX.
0˚
8˚
SEATING
PLANE
0.60
1.00
0.35
0.50
0.10
0.35
END VIEW
SIDE VIEW
16-038-SO44-2
SO 044
DF83
8-8-96 lv
39
Am29LV400
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV400
100% tested. Corrected the note reference for tVCS
This parameter is not 100% tested.
.
Revision C
Added FBGA package. Formatted for consistency with
other current 5.0 volt-only data sheets.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Revision C+1
DC Characteristics
Revision C+2
Changed Note 1 to indicate that OE# should be at VIH.
Ordering Information
AC Characteristics
Corrected the speed options to match the remainder of
document.
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29LV400
40
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