SDEM20161T-1R0MS [CYNTEC]
Sealed Choke Coil SDEM20161T type;型号: | SDEM20161T-1R0MS |
厂家: | Cyntec |
描述: | Sealed Choke Coil SDEM20161T type |
文件: | 总4页 (文件大小:87K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DOCUMENT : SDEM20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A4
: 1 OF 4
Sealed Choke Coil SDEM20161T type
ꢀ Features
Low profile 2.0 mm 1.6 mm 1.0 mm
High performance (Isat) realized by metal dust core.
Low loss realized with low DCR
High magnetic shield construction should actualize high resolution for EMC.
100% lead (Pb) free meet RoHS standard
ꢀ
Application
DC/DC converter for CPU in Notebook PC
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
VRM for server
ꢀ
Outline Dimensions
W
Code
L
Dimensions(mm)
1.6 0.1
L
T
W
T
2.0 0.1
1.0 Max.
Note This graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product.
ꢀ Recommend Land Pattern Dimensions
The customer shall determine the land dimensions shown below after confirming and safety.
B
A
B
C
1.6
0.7
A
2.0
Unit : mm
C
Jan., 2018
DOCUMENT : SDEM20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A4
: 2 OF 4
ꢀ
Specifications
L0
Heat Rating Current
DC Amps. Idc ( A )
Saturation Current
DC Amps. Isat ( A )
Rdc ( mΩ)
Inductance
( µH )
@ (0A)
Part Number
Typical
Maximum
Typical
Maximum
Typical
Maximum
SDEM20161T-R24MS
SDEM20161T-R33MS
SDEM20161T-R47MS
SDEM20161T-R68MS
SDEM20161T-1R0MS
SDEM20161T-1R5MS
SDEM20161T-2R2MS
SDEM20161T-3R3MS
SDEM20161T-4R7MS
SDEM20161T-6R8MS
SDEM20161T-100MS
0.24
0.33
0.47
0.68
1.0
20
27
24
32
5.0
4.0
3.5
3.2
2.7
2.4
1.8
1.2
1.1
0.8
0.7
4.50
3.60
3.00
2.80
2.40
2.16
1.60
1.08
1.00
0.72
0.63
6.1
4.6
4.4
3.7
3.15
2.7
1.9
1.5
1.4
1.15
0.8
5.50
4.10
3.90
3.30
2.70
2.43
1.70
1.35
1.26
1.05
0.72
34
41
46
55
60
72
1.5
100
134
255
355
532
840
120
159
306
426
639
1,010
2.2
3.3
4.7
6.8
10.0
*
If you require another part number please contact with us.
** Inductance Tolerance 20%
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
All test data is referenced to 25 ambient.
Test Condition 1MHz, 1.0Vrms
Idc : DC current (A) that will cause an approximate T of 40
Isat : DC current (A) that will cause L0 to drop approximately 30%
Operating Temperature Range -55 to + 125
The part temperature (ambient + temp rise) should not exceed 125
under the worst case operating
conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling
provision all affect the part temperature. Part temperature should be verified in the end application.
Note 7.
The rated current as listed is either the saturation current or the heating current depending on which value is
lower.
Jan., 2018
DOCUMENT : SDEM20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A4
: 3 OF 4
ꢀ
Current Characteristic
0.40
0.32
0.24
0.16
0.08
0.00
SDEM20161T-R33MS
80
70
60
50
40
30
20
10
0
0.30
0.25
0.20
0.15
0.10
0.05
0.00
SDEM20161T-R24MS
100
80
60
40
20
0
INDUCTANCE(µH)
TEMP. RISE(
)
INDUCTANCE(µH)
TEMP. RISE(
)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1
2
3
4
5
6
7
8
DC BIAS(Amps)
DC BIAS(Amps)
SDEM20161T-R47MS
0.60
0.50
0.40
0.30
0.20
0.10
0.00
100
0.84
0.70
0.56
0.42
0.28
0.14
0.00
SDEM20161T-R68MS
100
80
60
40
20
0
80
60
40
20
0
INDUCTANCE(µH)
TEMP.RISE(
INDUCTANCE(µH)
TEMP. RISE(
)
)
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
DC BIAS(Amps)
0
1
2
3
4
5
6
DC BIAS(Amps)
1.20
1.00
0.80
0.60
0.40
0.20
0.00
100
80
60
40
20
0
SDEM20161T-1R0MS
1.80
1.50
1.20
0.90
0.60
0.30
0.00
100
SDEM20161T-1R5MS
80
60
40
20
0
INDUCTANCE(µH)
TEMP. RISE(
)
INDUCTANCE(µH)
TEMP. RISE(
)
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
DC BIAS(Amps)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
DC BIAS(Amps)
2.70
2.25
1.80
1.35
0.90
0.45
0.00
SDEM20161T-2R2MS
100
80
60
40
20
0
4.20
3.50
2.80
2.10
1.40
0.70
0.00
SDEM20161T-3R3MS
100
80
60
40
20
0
INDUCTANCE(µH)
TEMP. RISE(
)
INDUCTANCE(µH)
TEMP. RISE(
)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
DC BIAS(Amps)
DC BIAS(Amps)
Jan., 2018
DOCUMENT : SDEM20161T-000
CYNTEC CO., LTD.
乾坤科技股份有限公司
REVISION
PAGE
: A4
: 4 OF 4
8.40
7.00
5.60
4.20
2.80
1.40
0.00
SDEM20161T-6R8MS
100
80
60
40
20
0
SDEM20161T-4R7MS
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
80
60
40
20
0
INDUCTANCE(µH)
INDUCTANCE(µH)
TEMP. RISE(
TEMP. RISE(
)
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
DC BIAS(Amps)
DC BIAS(Amps)
SDEM20161T-100MS
12.0
10.0
8.0
100
80
60
40
20
0
6.0
4.0
INDUCTANCE(µH)
2.0
TEMP. RISE(
)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
DC BIAS(Amps)
Jan., 2018
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