CTLM43NS20-R3 [CTMICRO]
N-Channel Enhancement MOSFET;
| 型号： | CTLM43NS20-R3 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总11页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLM43NS20-R3
N-Channel Enhancement MOSFET
Features
Description
The CTLM43NS20-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Drain-Source Breakdown Voltage VDSS 200 V
Drain-Source On-Resistance
RDS(ON) , at VGS= 10V, ID= 430m
•
•
Ω
3.6
A
RDS(ON) 3.7
Ω
, at VGS= 4.5V, ID= 425mA
•
•
•
Continuous Drain Current at TA=25 ID =0.43A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
•
Power Management
•
•
•
LCD Display inverter
DC/DC Converter
Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
Test Conditions
Min
V
Notes
Drain-Source Voltage
200
20
V
DS
GS
Gate-Source Voltage
V
V
Continuous Drain Current @TA=25
0.43
A
1
1
2
I
D
Pulsed Drain Current
1.7
A
IDM
Total Power Dissipation @TA=25
1.25
W
°C
°C
P
D
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Characteristics
Symbol
Parameters
Test Conditions
Min
--
Typ
Max
--
Units Notes
Thermal Resistance
Junction-Ambient (t=10s)
R
ӨJA4
oC /W
1,4
100
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
= 250µA
DS = 200V, VGS = 0V
Min
Typ
Max
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
V
GS= 0V, I
D
200
-
-
-
-
V
B
VDSS
DSS
V
-
-
1
µA
nA
I
V
GS
=
20V, VDS = 0V
100
IGSS
On Characteristics
Symbol
Parameters
Test Conditions
VGS = 10V, ID = 430mA
Min
Typ
3.6
3.7
---
Max
4.3
Units Notes
-
-
Ω
Drain-Source On-Resistance
Gate-Source Threshold Voltage
3
RDS(ON)
VGS
VGS
ID
= 4.5V, =425mA
4.5
Ω
VGS(th)
ID
1.0
3.0
V
3
= VDS, I =250µA
Dynamic Characteristics
Symbol
Parameters
Test Conditions
VGS
Min
Typ
373
25
Max
Units Notes
Input Capacitance
-
-
-
-
-
-
C
ISS
=0V,
Output Capacitance
V
DS =15V
f=1MHz
pF
C
OSS
RSS
Reverse Transfer Capacitance
8
C
Switching Characteristics
Symbol
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
VDS =25V ,
Min
Typ
10
Max
Units
Notes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
D(ON)
16
T
R
RL= 25Ω,
ns
VGS = 10V,
RG = 25Ω
Turn-Off Delay Time
Fall Time
33
T
D(OFF)
9
T
F
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
4.3
2.7
1.1
Q
G
VDS =10V ,
VGS = 4.5V,
ID = 0.35A
nC
Q
GS
Q
GD
CT Micro
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
= 430mA
Min
Typ
0.8
-
Max
1.2
1
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
V
GS = 0V, I
D
-
-
V
A
VSD
1
ISD
Note:
1. The power dissipation is limited by 150
2. Device mounted on a glass-epoxy board
junction temperature.
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
CT Micro
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 8: Gate Charge Test Circuit
Figure 9: Gate Charge Waveform
Figure 10: Switching Time Test Circuit
Figure 11: Switching Time Waveform
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Package Dimension (SC-59)
Note: Dimensions in mm
Recommended pad layout for surface mount leadform
Note: Dimensions in mm
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Marking Information
E302A: Device Number
Ordering Information
Part Number
Description
Quantity
CTLM43NS20-R3
SC-59 Reel
3000 pcs
CT Micro
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
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Jun, 2015
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CTLM43NS20-R3
N-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labelling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
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