CTLM13PS05-R3 [CTMICRO]
P-Channel Enhancement MOSFET;
| 型号： | CTLM13PS05-R3 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总11页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTLM13PS05-R3
P-Channel Enhancement MOSFET
Features
Description
The CTLM13PS05-R3 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
• Drain-Source Breakdown Voltage VDSS - 50 V
• Drain-Source On-Resistance
R
DS(ON) 5Ω, at VGS= - 5.0V, IDS= - 100mA
• Continuous Drain Current at TA=25 ID = -130mA
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Source
Gate
CT Micro
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
VDS
VGS
ID
Parameters
Ratings
-50
Units
V
Notes
Drain-Source Voltage
Gate-Source Voltage
20
V
Continuous Drain Current @TA=25
-0.13
A
1
1
2
Pulsed Drain Current
-0.52
A
IDM
Total Power Dissipation @TA=25
0.225
W
PD
Storage Temperature Range
-55 to 150
-55 to 150
oC
oC
TSTG
TJ
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units Notes
Thermal Resistance
Junction-Ambient (t=10s)
-
555
-
oC /W
1,4
RӨJA
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
BVDSS
IDSS
Parameters
Test Conditions
VGS=0V, ID= -250µA
VDS = -50V, VGS = 0V
VGS = 20V, VDS = 0V
Min
Typ
Max
-
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
-50
-
-
-
V
-
-
-1
µA
nA
IGSS
100
On Characteristics
Symbol
RDS(ON)
VGS(TH)
Parameters
Test Conditions
VGS = -5V, ID = -100mA
VGS = VDS, ID = -250µA
Min
-
Typ
Max
10
Units
Notes
Fig 4
Fig 5
Drain-Source On-Resistance
Gate-Source Threshold Voltage
5
-
-0.8
-2.0
V
Dynamic Characteristics
Symbol
CISS
Parameters
Input Capacitance
Test Conditions
VDS = -5V ,
VGS = 0V,
Min
Typ
30
10
5
Max
Units
Notes
-
-
-
-
-
-
Output Capacitance
pF
Fig 3
COSS
CRSS
f=1MHz
Reverse Transfer Capacitance
Switching Characteristics
Symbol
TD(ON)
TR
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
Min
Typ
2.5
1.0
16
Max
Units
Notes
-
-
-
-
-
-
-
VDS = -15V , RL = 50Ω
Fig
ns
ID = -2.5A
11 & 12
Turn-Off Delay Time
Fall Time
TD(OFF)
TF
8
CT Micro
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
-2.5
-
Max
-
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
VGS = 0V, ID = -0.1A
-
-
V
A
VSD
-0.13
1
ISD
Note:
1. The power dissipation is limited by 150
2. Device mounted on a glass-epoxy board
junction temperature.
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width
4. Thermal Resistance follow JESD51-3.
300 s , duty cycle
2%
CT Micro
Proprietary & Confidential
Rev 1
Jun, 2015
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
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Rev 1
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
CT Micro
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 8: Gate Charge Test Circuit
Figure 9: Gate Charge Waveform
Figure 10: Switching Time Test Circuit
Figure 11: Switching Time Waveform
CT Micro
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Rev 1
Jun, 2015
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Package Dimension (SC-59)
Recommended pad layout for surface mount leadform
CT Micro
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Marking Information
B 3 0 5 D
B305D : Device Number
Ordering Information
Part Number
Description
Quantity
CTLM13PS05-R3
SC-59 Reel
3000 pcs
CT Micro
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Rev 1
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
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Jun, 2015
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CTLM13PS05-R3
P-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION..
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
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