CTH7003NS-T52 [CTMICRO]
N-Channel Enhancement MOSFET;
| 型号： | CTH7003NS-T52 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总12页 (文件大小：602K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTH7003NS-T52
N-Channel Enhancement MOSFET
Features
Description
The CTH7003NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Drain-Source Breakdown Voltage VDSS 30V
Drain-Source On-Resistance
DS(ON) 4.3m , at VGS= 10V, ID= 20A
RDS(ON) 6m , at VGS= 4.5V, ID= 20A
Continuous Drain Current at TC=25 ID =
•
•
R
Ω
Ω
70.7A
•
•
•
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
•
•
•
DC/DC Converter
Power Management
Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Gate
Source
Source
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 1
CTH7003NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
Test Conditions
Min
V
Note
Drain-Source Voltage
30
20
V
DS
GS
Gate-Source Voltage
V
V
Continuous Drain Current @TC=25
70.7
A
1
1
2
I
D
Pulsed Drain Current
284
A
IDM
Total Power Dissipation @TC=25
42
W
°C
°C
P
D
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Characteristics
Symbol
Parameters
Thermal Resistance
Junction-Case
Test Conditions
Min
--
Typ
Max
3.0
Units Notes
R
ӨJC
oC /W
1,4
--
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 2
CTH7003NS-T52
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
= 250µA
DS = 30V, VGS = 0V
Min
Typ
Max
-
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
V
GS= 0V, I
D
30
-
-
-
V
B
VDSS
DSS
V
1
µA
nA
I
-
-
IGSS
V
GS = 20V, VDS = 0V
100
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
4.3
6
Max
5.2
8
Units Notes
V
GS = 10V, I
GS = 4.5V, I
GS = VDS, I
D
= 20A
= 20A
-
mΩ
Drain-Source On-Resistance
Gate-Source Threshold Voltage
3
RDS(ON)
V
V
D
mΩ
1.0
-
3.0
VGS(th)
D
=250µA
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
VGS
Min
Typ
2580
393
Max
Units Notes
Input Capacitance
-
-
-
-
-
-
C
ISS
=0V,
Output Capacitance
V
DS =15V
f=1MHz
pF
C
OSS
RSS
Reverse Transfer Capacitance
128
C
Switching Characteristics
Symbol
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
VDS = 15V,
Min
Typ
23
17
76
12
28
9
Max
Units
Notes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
D(ON)
RG = 3Ω,
T
R
ns
VGS = 10V,
Turn-Off Delay Time
Fall Time
T
D(OFF)
RL
= 15Ω,
T
F
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
VDS = 15V ,
Q
G
VGS = 4.5V,
ID =20A
nC
Q
GS
13
Q
GD
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 3
CTH7003NS-T52
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
0.8
-
Max
1.2
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
V
GS = 0V, ISD = 20A
-
-
V
A
1
1
VSD
20
ISD
Note:
1.The power dissipation is limited by 150 junction temperature.
The data tested by pulsed , pulse width
300 s , duty cycle
2%
2.
3.Thermal Resistance follow JESD51-3.
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 4
CTH7003NS-T52
N-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
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CTH7003NS-T52
N-Channel Enhancement MOSFET
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
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CTH7003NS-T52
N-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 7
CTH7003NS-T52
N-Channel Enhancement MOSFET
Package Dimension (TO-252)
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
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CTH7003NS-T52
N-Channel Enhancement MOSFET
Dimensions in mm unless otherwise stated
Recommended pad
mount leadform
layout for surface
CT
H7003N
YWWA
：Denotes “ CT M
CT
：Device Numbe
：Fiscal Year
H7003N
Y
：Work Week
WW
A
：Production Code
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 9
CTH7003NS-T52
N-Channel Enhancement MOSFET
Ordering Information
Part Number
Description
Quantity
CTH7003NS-T52
TO-252 Reel
2500 pcs
Reflow Profile
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
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CTH7003NS-T52
N-Channel Enhancement MOSFET
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
Time 25°C to Peak Temperature
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labelling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 11
CTH7003NS-T52
N-Channel Enhancement MOSFET
CT Micro
Proprietary & Confidential
Rev 3
Jun, 2015
Page 12
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