S30U150CT [CTC]
Extreme Low VF Trench MOS Schottky;
| 型号： | S30U150CT |
| 厂家： | 
COMPACT TECHNOLOGY CORP. |
| 描述： | Extreme Low VF Trench MOS Schottky |
| 文件： | 总2页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S30U150CT
REVERSE VOLTAGE - 150 Volts
Extreme Low VF Trench MOS Schottky
FEATURES
FORWARD CURRENT - 30.0 Amperes
TO-220
‧ Low power loss, high efficiency
‧ Low forward voltage drop
‧ High forward surge capability
‧ High frequency operation
‧ Excellent high temperature stability
‧ Trench MOS Schottky technology
MECHANICAL DATA
‧ Case: TO-220
‧ Polarity: As marked
‧ Weight: Approximated 1.86 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristics
Maximum Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Symbol
VRRM
Value
150
Unit
V
VRMS
105
V
Forward Voltage Drop
Typ.
0.80
0.64
0.85
0.69
Typ.
3
Max.
-
IF=10A
IF=10A
(TJ=25℃)
(TJ=125℃)
VF
-
V
IF=15 A (TJ=25℃)
IF=15 A (TJ=125℃)
Maximum Reverse Current at Rated VRRM
TJ=25°C
0.90
0.75
Max.
30
IR
µA
TJ=125°C
3
20
mA
Maximum Average Forward Rectified Current
Total device
Per diode
Peak Forward Surge Current,
8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IO
30
15
A
A
IFSM
200
Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,
Operating and StorageTemperature Range
IRRM
1.0
A
TJ, TSTG
-65 to +150
°C
S30U150CT_V0
1
S30U150CT
Rating and Characteristic Curves
S30U150CT_V0
2
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