1N4007 [CTC]
PLASTIC SILICON RECTIFIERS; 塑料硅整流
| 型号： | 1N4007 |
| 厂家： | 
COMPACT TECHNOLOGY CORP. |
| 描述： | PLASTIC SILICON RECTIFIERS |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Compact Technology
1N4001 thru 1N4007
- 50 1000
REVERSE VOLTAGE
FORWARD CURRENT
to
Volts
PLASTIC SILICON RECTIFIERS
- 1.0
Ampere
DO-41
FEATURES
Low cost
A
A
B
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
C
D
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
DO-41
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
Min.
25.4
4.20
0.70
2.00
Max.
-
5.20
0.90
2.70
Dim.
A
B
C
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ꢀ
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N4007
CHARACTERISTICS
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
50
35
50
RRM
RMS
V
V
V
V
V
V
DC
Maximum Average Forward
Rectified Current
A
I
(AV)
1.0
A=
@T 75 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
A
I
FSM
30
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
V
V
F
1.1
5
50
@T
J
=25 C
I
R
uA
at Rated DC Blocking Voltage
@T
J
=100 C
Typical Junction
Capacitance (Note 1)
15
35
C
J
pF
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
0JA
C/W
C
T
J
-55 to +150
T
STG
-55 to +150
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Thermal Resistance Junction to Case at 9.5mm Lead Length.PCB Mounted JEDEC Registered Value.
CTC0140 Ver. 1.0
1 of 2
1N4001 thru 1N4007
Compact Technology
1N4001 thru 1N4007
RATINGSAND CHARACTERISTICCURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL FORWARD CHARACTERISTICS
20
10
1.0
.8
2
1.0
.6
.4
.4
.2
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
.1
Tj = 25OC
Pulse Width = 300us
1% Duty Cycle
.2
0
.04
.02
.01
.6
.8
1.0 1.2
FORWARD VOLTAGE. (V)
1.4 1.5
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE.(OC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4- TYPICAL JUNCTIONCAPACITANCE
50
40
30
100
60
40
8.3ms Single Half SineWave
JEDEC Method
20
10
20
10
Tj=25OC
6
4
2
1
0
.1 .2 .4
1.0
2
4
10 20 40
100
1
2
4
6
8
10
20
40 6 0 80 100
REVERSE VOLTAGE. (V)
NUMBER OF CYCLESAT 60Hz
FIG.5- TYPICAL REVERSECHARACTERISTICS
10
4
Tj=100OC
1.0
.4
.1
Tj=25OC
.04
.01
0
20
40
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
60 80 100 120 140
CTC0140 Ver. 1.0
2 of 2
1N4001 thru 1N4007
相关型号：
1N4007-AP
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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