PTRA087008NB [CREE]
Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 â 805 MHz;
| 型号： | PTRA087008NB |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 â 805 MHz |
| 文件： | 总11页 (文件大小：660K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTRA087008NB
Thermally-Enhanced High Power RF LDMOS FET
650 W, 48 V, 755 – 805 MHz
Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for
use in multi-standard cellular power amplifier applications from 755
MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTRA087008NB
Package PG-HB2SOF-6-
Features
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 510 mA,
•ꢀ Broadband internal input and output matching
•ꢀ Asymmetric design
VGS(PEAK) = 2.4 V, ƒ = 805 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
- Main: P
- Peak: P
= 245 W Typ
= 380 W Typ
1dB
1dB
24
60
40
20
0
ergoqhgorgn'
qp
Efficiency
•ꢀ Typical pulsed CW performance, 805 MHz, 48 V,
20
16
12
8
Doherty configuration
- Output power at P
- Efficiency = 52%
- Gain = 19.5 dB
= 650 W
3dB
Gain
•ꢀ Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
-20
-40
-60
PAR @ 0.01% CCDF
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
4
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
•ꢀ RoHS-compliant
ra087008nb-gr1a
0
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 48 V, I = 510 mA, P = 107 W avg, V = 2.4 V, ƒ = 805 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/
V
DD
DQ
OUT
GS(PEAK)
average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
17.5
48.5
—
Typ
18.5
52
Max
—
Unit
dB
Gain
G
ps
D
Drain Efficiency
h
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
–31
–7.2
–28
—
dBc
dB
6.7
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03.1, 2018-07-12
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
2
PTRA087008NB
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
105
—
Typ
—
Max
—
1
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
= 48 V, V = 0 V
I
I
—
µA
µA
µA
DS
DS
GS
DSS
DSS
GSS
V
= 105 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
V
GS
= 10 V, V = 0 V
I
—
—
DS
On-State Resistance
(Main)
(Peak)
V
= 10 V, V = 0.1 V
R
R
—
—
0.07
0.05
—
—
W
W
GS
DS
DS(on)
DS(on)
V
GS
= 10 V, V = 0.1 V
DS
Operating Gate Voltage (Main)
(Peak)
V
= 48 V, I
= 48 V, I
= 0.2 A
= 0 A
V
GS
3.0
—
3.5
2.4
4.0
—
V
V
DS
DS
DQ
DQ
V
V
GS
Maximum Ratings
Parameter
Symbol
Value
105
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +12
0 to +55
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
°C
°C
J
T
STG
–65 to +150
Thermal Chracteristics
V
DD
= 48 V, I
= 500 mA, 780 MHz
DQ
Parameter
Symbol
Value
Unit
Thermal Resistance (Main)
T
CASE
= 70°C, P
= 107 W CW
R
qJC
0.70
°C/W
OUT
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PTRA087008NB V1 R2
PTRA087008NB-V1-R2
PG-HB2SOF-6-1, overmold
Tape & Reel, 250 pcs
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA087008NB
3
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 50 V, IDQ(MAIN) = 510 mA,
VDD = 48 V, IDQ(MAIN) = 510 mA,
VGS(PEAK) = 2.4 V, ƒ = 805 MHz,
VGS(PEAK) = 2.4 V, ƒ = 780 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
24
20
16
12
8
60
40
20
0
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
ACPL
ACPU
Efficiency
Gain
Efficiency
PAR @ 0.01% CCDF
-20
-40
-60
4
ra087008nb-gr1b
ra087008nb-gr2a
0
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Broadband
VDD = 48 V, IDQ(MAIN) = 510 mA,
VDD = 48 V, IDQ(MAIN) = 510 mA,
V
GS(PEAK) = 2.4 V, ƒ = 780 MHz,
VGS(PEAK) = 2.4 V, POUT = 50.3 dBm,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
20
19
18
17
16
15
14
60
55
50
45
40
35
30
ACPL
ACPU
Efficiency
Gain
Efficiency
ra087008nb-gr3
ra087008nb-gr2b
650
700
750
800
850
900
25
30
35
40
45
50
55
Frequency (MHz)
Average Output Power (dBm)
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
4
PTRA087008NB
Typical Performance (cont.)
Single-carrier WCDMA Broadband
CW Performance
VDD = 48 V, IDQ(MAIN) = 510 mA,
VDD = 48 V, IDQ(MAIN) = 510 mA,
VGS(PEAK) = 2.4 V, POUT = 50.3 dBm,
VGS(PEAK) = 2.4 V
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
ACPU
ACPL
IRL
Gain
Efficiency
805 MHz
758 MHz
780 MHz
ra087008nb-gr5
ra087008nb-gr4
29
34
39
44
49
54
59
650
700
750
800
850
900
Output Power (dBm)
Frequency (MHz)
CW Performance at various VDD
IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V,
ƒ = 780 MHz
CW Performance at various VDD
IDQ(MAIN) = 510 mA, VGS(PEAK) = 2.4 V,
ƒ = 805 MHz
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
44V
48 V
52 V
44 V
48 V
52 V
Gain
Gain
Efficiency
Efficiency
ra087008nb-gr6a
ra087008nb-gr6b
29
34
39
44
49
54
59
29
34
39
44
49
54
59
Output Power (dBm)
Output Power (dBm)
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA087008NB
5
Typical Performance (cont.)
CW Performance Small Signal
VDD = 48 V, IDQ(MAIN) = 510 mA,
GSPEAK = 2.4 V
V
22
20
18
16
14
12
10
8
-10
-12
-14
-16
-18
-20
-22
-24
-26
Gain
PAR @ 0.01% CCDF
ra087008nb-gr7
6
700
750
800
850
Frequency (MHz)
See Load Pull Performance, next page
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
6
PTRA087008NB
Load Pull Performance
Main side
Pulsed CW signal: 10 µsec, 10% duty cycle, V
= 48 V, I
= 510 mA, class AB
DQ
DD
P
1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
[dBm]
P
[W]
hD
[%]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
hD
[%]
OUT
OUT
OUT
760
780
805
0.6 – j1.9
0.6 – j2.0
0.6 – j2.3
1.3 – j0.5
1.3 – j0.5
1.2 – j0.3
21.41
21.45
21.39
54.81
54.73
54.66
303
297
292
59.5
59.0
58.5
2.7 + j1.1
2.5 + j2.0
2.3 + j1.2
23.40
23.55
23.58
52.50
52.42
52.50
178
175
178
71.7
71.4
71.1
P
3dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
hD
[%]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
hD
[%]
OUT
OUT
760
780
805
0.6 – j1.9
0.6 – j2.0
0.6 – j2.3
1.4 – j0.6
1.3 – j0.6
1.3 – j0.6
19.53
19.52
19.62
55.56
55.49
55.44
360
354
350
62.9
61.7
61.7
2.3 + j0.6
2.3 + j0.6
2.0 + j0.5
21.02
21.24
21.13
53.91
53.92
54.15
246
247
260
72.5
72.3
71.0
Peak side
Pulsed CW signal: 10 µsec, 10% duty cycle, V
= 48 V, V
= 2.4 V, class B
DD
GS(PEAK)
P
1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
[dBm]
P
[W]
hD
[%]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
hD
[%]
OUT
OUT
OUT
760
780
805
0.3 – j2.1
0.5 – j2.3
0.7 – j2.8
0.7 – j0.6
0.8 – j0.4
0.8 – j0.3
19.78
20.13
19.91
56.85
56.75
56.65
484
473
462
60.1
61.0
61.1
1.2 + j0.4
1.3 + j0.6
1.4 + j0.8
21.46
21.40
21.40
54.72
54.56
54.12
296
286
258
73.2
73.0
72.2
P
3dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
[dBm]
P
[W]
hD
[%]
Zl
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
hD
[%]
OUT
OUT
OUT
760
780
805
0.3 – j2.1
0.5 – j2.3
0.7 – j2.8
0.8 – j0.7
0.8 – j0.5
0.8 – j0.3
17.86
18.16
17.90
57.63
57.45
57.34
579
556
542
62.8
62.4
62.4
1.2 + j0.2
1.3 + j0.4
1.1 + j0.5
19.35
19.39
19.13
55.84
55.49
55.50
384
354
355
74.3
73.3
72.7
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA087008NB
7
Reference Circuit, tuned for 755 to 805 MHz
Reference Circuit Assembly
DUT
PTRA087008NB V1
Reference Circuit Part No. LTN/PTRA087008NB V1
PCB
Rogers 4360, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
VDD
RO4350, 20 MIL
RO4350, 20 MIL
C209
VGG
Main
Main
C201
C102
C101
C213
R101
C210
C212
C211
C104
R103
C106
C202
C204
C206
R104
C105
C208
C207
C103
C203
C214
C205
C216
U1
RF_IN
RF_OUT
C111
C113
C109
C218
C219
C110
R102
C217
C215
C112
C107
C221
C225
VDD
C220
C222
C223
C226
VGG
C108
C224
Peak
Peak
PTRA087008NB_OUT_07
PTRA087008NB_IN_07
p t r a 0 8 7 0 0 8 n b _ C D _ 0 5 - 0 9 - 1 9 _ b n
Reference circuit assembly diagram (not to scale)
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
8
PTRA087008NB
Reference Circuit (cont.)
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C105,C107, C113
C102, C108
C103
Capacitor, 43 pF
Capacitor, 10 µF
Capacitor, 6.8 pF
Capacitor, 7.5 pF
Capacitor, 3.0 pF
Capacitor, 2.0 pF
Capacitor, 9.1 pF
Resistor, 6.2 ohms
ATC
ATC600F430JW250T
UMK325C7106MM-T
ATC600F6R8JW250T
ATC600F7R5JW250T
ATC600F3R0CT250T
ATC600F2R0CW250T
ATC600F9R1JW250T
P6.2ECT-ND
Taiyo Yuden
ATC
C104
ATC
C106
ATC
C109, C111, C112
C110
ATC
ATC
R101, R102
Panasonic
R103
R104
U1
Resistor, 5.1 ohms
Resistor, 50 ohms
Hybrid coupler
Panasonic
Anaren
P5.1ETR-ND
C8A50Z4A
Anaren
X3C09P1-03S
Output
C201, C210, C211, C212,
C221, C224, C225, C226
Capacitor, 10 µF, 100 V
TDK Corporation
C5750X7S2A106M230KB
C202
Capacitor, 9.1 pF
Capacitor, 8.2 pF
Capacitor, 3.0 pF
Capacitor, 2.2 pF
Capacitor, 0.6 pF
Capacitor, 10 pF
Capacitor, 43 pF
Capacitor, 100 µF, 63 V
Capacitor, 6.2 pF
ATC
ATC600F9R1JW250T
ATC600F8R2JW250T
ATC600F3R0CW250T
ATC600F2R2CW250T
ATC600F0R6CW250T
ATC600F100JW250T
ATC600F430JW250T
EEE-FK1J101P
C203
ATC
C204
ATC
C205
ATC
C206, C207
C208, C214, C215
C209, C218, C219, C220
C213, C222, C223
C216, C217
ATC
ATC
ATC
Panasonic
ATC
ATC600F6R2JW250T
Pinout Diagram (top view)
V1
Main
V2
Peak
Pin
D1
D2
G1
G2
S
Description
Drain device 1 (Main)
Drain device 2 (Peak)
Gate device 1 (Main)
Gate device 2 (Peak)
Source (flange)
D1
D2
S = flange
V1, V2 Drain video decoupling, no DC Bias
G1
G2
P
G - H B 2 S O F - 6 - 1 _ P D _ 0 9 - 2 1 - 2 0 1 6
Lead connections for PTRA087008NB
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA087008NB
9
Package Outline Specifications
Package PG-HB2SOF-6-1 (top and side views)
1
32.26
2x 14.12
2.83
2x 10.6
2x 1.02
V
1.57
2x 4.44
4x 11.29
7.06
V
D1
D2
G2
G1
2x 1.00
PG-HB2SOF-6-1_prelim_02-09-2017
0.25
5
32.26
3.81
Diagram Notes—unless otherwise specified:
1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included.
2. Fillets and radii: all radii are 0.3 mm max.
3. Interpret dimensions and tolerances per ISO 8015.
4. Dimensions are mm.
5. Does not include mold/dam bar and metal protrusion.
6. All tolerances 0.1 mm unless specified otherwise.
7. All metal surfaces tin pre-plated, except area of cut.
8. Lead thickness: 0.25 mm.
9. Pins: D1, D2 – drain; G1, G2 – gate; S – source;
V – drain video decoupling, no DC bias
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
10
PTRA087008NB
Package Outline Specifications
Package PG-HB2SOF-6-1 (bottom view)
2x 0.50
0.05
V
V
D2
G2
D1
G1
PG-HB2SOF-6-1_prelim_02-09-2017
31.26
Diagram Notes—unless otherwise specified:
1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included.
2. Fillets and radii: all radii are 0.3 mm max.
3. Interpret dimensions and tolerances per ISO 8015.
4. Dimensions are mm.
5. Does not include mold/dam bar and metal protrusion.
6. All tolerances 0.1 mm unless specified otherwise.
7. All metal surfaces tin pre-plated, except area of cut.
8. Lead thickness: 0.25 mm.
9. Pins: D1, D2 – drain; G1, G2 – gate; S – source;
V – drain video decoupling, no DC bias
Rev. 03.1, 2018-07-12
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA087008NB
Revision History
Revision Date
11
Data Sheet
Type
Page
Subjects (major changes at each revision)
01
2016-07-14
2017-08-15
2018-06-20
Advance
All
Data Sheet reflects advance specification for product development
Updated features, RF Characteristics, Max Ratings table and Pinout Diagram
Update specifications tables (pg 1-2), and graphs.
01.1
02
Advance
1, 2
All
Preliminary
Final specifications for Production-released product, including updates to Thermal
Characteristics table (p1) and circuit BOM (p8).
03
2018-06-26
2018-07-12
Production
Production
All
1
03.1
Revised title to 650W, removed R0 ordering information
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 03.1, 2018-07-12
www.wolfspeed.com
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SI9137LG
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SI9122E
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