PTAC210802FC [CREE]
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 â 2170 MHz;
| 型号： | PTAC210802FC |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 â 2170 MHz |
| 文件： | 总9页 (文件大小：719K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 1805 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an
asymmetrical design intended for use in multi-standard cellular
power amplifier applications in the 1805 to 2170 MHz frequency
band. Features include dual-path design, input matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Wolfspeed's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PTAC210802FC
Package H-37248-4
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture
•
Asymmetrical design
- Main: P1dB = 19 W Typ
- Peak: P1dB = 60 W Typ
•
•
•
Broadband internal matching
Wide video bandwidth
19
18
17
16
15
14
13
55
50
45
40
35
30
25
Efficiency
Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P
- Efficiency = 48%
= 75 W
3dB
- Gain @ P3dB = 14 dB
Gain
•
Typical CW pulsed performance, 1880 MHz, 28 V
(Doherty fixture)
- Output power @ P
- Output power @ P
- Efficiency = 48%
= 45 W
= 80 W
1dB
3dB
c210802fc-gc
- Gain@ P
= 14 dB
3dB
32
34
36
38
40
42
44
46
48
•
•
•
Capable of handling 10:1 VSWR @28 V, 80 W
(CW) output power
Output Power (dBm)
Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
RF Characteristics
Pb-free and RoHS compliant
Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
= 28V, I = 85 mA,V = 1.3V, P = 5W avg, ƒ = 2165 MHz, ƒ = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
GS1
OUT
1
2
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Symbol
Min
15.5
39
Typ
—
Max
17.5
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
IMD
43
%
Intermodulation Distortion
Output PAR at 0.01% probability on CCDF
—
–31
—
–26
—
dBc
dB
OPAR
8
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 07, 2018-06-25
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
PTAC210802FC
2
RF Characteristics (cont.)
Two-carrier WCDMA Specifications (not subject to production test, verified by design/characterization in Wolfspeed
Doherty test fixture)
V
DD
= 28V, I = 150 mA,V
= 2V, P = 5W avg, ƒ = 1880 MHz, ƒ = 1870 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
OUT 1 2
DQ
GS1
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Symbol
Min
17.5
33.5
—
Typ
18.3
36
Max
19.5
—
Unit
dB
Gain
G
ps
Drain Efficiency
Adjacent Channel Power Ratio
hD
%
ACPR
–38
–33
dBc
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
65
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
—
1
µA
µA
V
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
V
GS
= 10 V, I
= 0 V
I
—
—
DQ
GSS
On-State Resistance
On-State Resistance
Operating Gate Voltage
(main)
(peak)
(main)
(peak)
V
= 10 V, V = 0.1 V
R
R
—
0.6
0.19
2.65
2.70
—
W
GS
DS
DS(on)
DS(on)
V
GS
= 10 V, V = 0.1 V
—
—
W
DS
V
= 28 V, I
= 28 V, I
= 85 mA
V
GS
2.30
2.35
3.0
3.05
V
DS
DS
DQ
DQ
V
= 360 mA
V
GS
V
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
T
°C
°C
J
Storage Temperature Range
T
STG
–65 to +150
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
3
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance (main)
R
2.5
°C/W
JC
q
q
(T
CASE
= 70 °C, 19 W (CW), V
= 28 V, I
= 28 V, I
= 85 mA
DD
DQ
Thermal Resistance (peak)
(T = 70 °C, 60 W (CW), V
R
0.8
°C/W
JC
= 360 mA
CASE
DD
DQ
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PTAC210802FC V1 R0
PTAC210802FC V1 R250
PTAC210802FC V1 S250
PTAC210802FC-V1-R0
PTAC210802FC-V1-R250
PTAC210802FC-V1-S250
H-37248-4, earless flange
H-37248-4, earless flange
H-37248-4, earless flange
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 250 pcs
Typical Performance (data taken in a Doherty test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 150 mA, VGS1 = 2 V,
ƒ = 1880 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Power Sweep, CW
VDD = 28 V, IDQ = 150 mA, VGS1 = 2 V,
= 1880 MHz
18
17
16
15
14
13
50
45
40
35
30
25
20
19
18
17
16
15
14
13
60
50
40
30
20
10
0
Gain
Gain
Efficiency
Efficiency
c210802fc-1880_g1_rev01
c210802fc-1880_g2_rev01
32 33 34 35 36 37 38 39 40 41
Output Power (dBm)
30 32 34 36 38 40 42 44 46 48
Output Power (dBm)
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
4
Typical Performance (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
BW 3.84 MHz
-10
-15
-20
-25
-30
-35
-40
55
50
45
40
35
30
25
-18
-20
-22
-24
-26
-28
-30
IMD Low
IMD Up
ACPR
Efficiency
2110 IMDL
2140 IMDL
2170 IMDL
2110 IMDU
2140 IMDU
2170 IMDU
c210802fc-g2
c210802fc-g1
32
34
36
38
40
42
44
46
48
32
34
36
38
40
42
44
46
48
Output Power (dBm)
Output Power (dBm)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
-10
55
50
45
40
35
30
25
12
10
8
26
22
18
14
10
6
2110 MHz
2140 MHz
Efficiency
2170 MHz
OPAR
-15
-20
-25
-30
-35
-40
Gain
6
ACPU
2110 MHz
2140 MHz
2170 MHz
4
2
c210802fc-g3
c210802fc-g4
32
34
36
38
40
42
44
46
48
32
34
36
38
40
42
44
46
48
Output Power (dBm)
Output Power (dBm)
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
5
Typical Performance (cont.)
Single-carrier WCDMA
Broadband Performance
Power Sweep, CW
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
POUT = 9 W, 3GPP WCDMA signal,
PAR = 10 dB, BW 3.84 MHz
20
19
18
17
16
15
14
13
12
60
55
50
45
40
35
30
25
20
60
0
RL
50
-10
-20
-30
-40
-50
-60
Gain
Efficiency
40
IMD
30
20
10
0
Gain
2110 MHz
2140 MHz
2170 MHz
Efficiency
OPAR
c210802fc-g6
c210802fc-g5
2010 2050 2090 2130 2170 2210 2250
Frequency (MHz)
32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
Load Pull Performance
Z Source
Z Load
D1
S
G1
G2
D2
Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; V
= 28 V, 100 mA
DD
P
1dB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
P
PAE
[%]
Zl
[W]
Gain
[dB]
P
P
OUT
PAE
[%]
OUT
OUT
OUT
[dBm]
43.40
43.50
43.64
[W]
22
22
23
[dBm]
41.3
41.3
42.1
[W]
13
13
16
2110 28.4 – j28.1 15.1 – j11.9
2140 32.4 – j27.7 7.7 – j10
2170 45.1 – j33.3 10.8 – j10.6
20.8
22.0
21.6
50
61
58
4.6 – j5.2
4.15 – j6
5.2 – j7.2
23.6
23.9
23.4
68.1
71.9
68.6
Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; V
= 28 V, V
= 1.41 V, Doherty Class C
DD
Gs1
P
3dB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
P
PAE
[%]
Zl
[W]
Gain
[dB]
P
P
OUT
PAE
[%]
OUT
OUT
OUT
[dBm]
49.60
49.50
49.60
[W]
91
89
91
[dBm]
48.3
48.7
48.6
[W]
68
74
72
2110 14.8 – j14.6
2140 20.6 – j13.6
2.4 – j7.4
2.7 – j7.8
2.6 – j8.1
14.1
14.0
13.9
62.0
58.8
57.7
1.6 – j6.0
1.8 – j6.5
2.0 – j6.6
15.3
15.2
15.3
72.5
68.5
67.9
2170
24.5 – j9.8
Rev. 07, 2018-06-25
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
PTAC210802FC
6
Reference Circuit
Reference Circuit Assembly
DUT
PTAC210802FC
LTA/PTAC210802FC
Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, ε = 3.66
Test Fixture Part No.
PCB
r
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
GSPK
V
C205
(62)
DD
V
C211
C201
C202
(63)
C110
RO4350, .030
C206
C109
C106
R106
C108
R104
C103
C207
R103
S1
RF_OUT
RF_IN
C204
R102 C101
C107
R101
R105
GS
V
C102
PTAC210802F
OUT_01_D
C104
C105
C210C208
C203
C209
DD
V
PTAC210802F_IN_01_D
RO4350, .030
c
2 1 0 8 0 2 f c _ C D _ 0 2 - 0 8 - 2 0 1 8
Reference circuit assembly diagram (not to scale)
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
7
Reference Circuit (cont.)
Components Information
Component
Input
Description
Supplier
P/N
C101, C102, C103, C109
C104, C110
C105, C108
C106, C107
R101, R102, R104
R103
Chip capacitor, 24 pF
Capacitor, 100 µF
Chip capacitor, 0.1 µF
Capacitor, 10 µF
Resistor, 10 W
ATC
ATC800A240JT250XB
EEE-FP1V101AP
C1210C104K5RACTU
UMK325C7106MM-T
ERJ-3GEYJ100V
C16A50Z4
Panasonic Electronic Components
Kemet
Taiyo Yuden
Panasonic Electronic Components
Resistor, 50 W
Anaren
R105, R106
S1
Resistor, 1000 W
Hybrid coupler
Panasonic Electronic Components
Anaren
ERJ-8GEYJ102V
X3C21P1-03S
Output
C201, C208, C210, C211
C202, C209
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
EEE-FP1V221AP
Capacitor, 220 µF
Chip capacitor, 24 pF
Panasonic Electronic Components
ATC
C203, C204, C205, C206,
C207
ATC800A240JT250XB
Pinout Diagram (top view)
S
Peak
D1
Main
D2
Pin
Description
Drain device 1 (Peak)
Drain device 2 (Main)
Gate device 1 (Peak)
Gate device 2 (Main)
Source (flange)
D1
D2
G1
G2
S
H-37248-4__do_pd_10-10-2012
G1
G2
Lead connections for PTAC210802FC
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
8
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
C
L
+0.13
-0.38
4X R0.76
2X 4.83±0.51
[.190±0.020]
D1
D2
+0.005
-0.015
R.030
[
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
C
L
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
H-37248-4_po_02_01-09-2013
3.76±0.25
[.148±0.010]
C
L
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Rev. 07, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTAC210802FC
9
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
01
2013-06-11
2012-06-12
2013-10-17
2013-12-17
Data Sheet reflects advance specification for product development
Updated power level measured for thermal data
01.1
02
Advance
2
Production
Production
All
Data Sheet reflects released product specification
03
1
2
7
Added ESD classification, revised two-carrier WCDMA Specifications
Added operating voltage in Maximum Ratings table
Updated package outline
04
2014-05-14
2014-10-31
2015-12-23
2016-06-17
2017-04-07
2018-02-08
2018-06-25
Production
Production
Production
Production
Production
Production
Production
2
Revised juntion temperature in Maximum Ratings table
Revised ESD classification. Corrected IMD to ACPR in RF Characteristics table.
DC Chracteristic Table
05
1
05.1
05.2
06
2
2
Updated ordering code to include R0
1
Updated RF Characteristics table to include OPAR
Updated RF Characteristics table and ordering information
Converted to Wolfspeed Data Sheet
06.1
07
1, 3
All
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 07, 2018-06-25
www.wolfspeed.com
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