PT62SCMD12_技术文档

PT62SCMD12

Dual 1200V SIC MOSFET driver

Features:



Designed for driving CREE CAS300M12BM2 SIC MOSFETS modules

Low jitter: typical 1ns

+20V/-6V gate driving

Over-current protected

Switching frequencies up to 125kHz

Adjustable dead and blanking time

Dead-time generator

Output currents up to +/- 20A

Under and over voltage lock out

High dV/dt immunity

No optocouplers

RS422 input interface

Large power supply range, from 15V up to 24V

Driver ID

Associated SIC MOSFET module

PT62SCMD12 R01

CAS300M12BM2

Overview:

OCP settings

C_BLA

NK

GND

R_OC

CONTROLLER

P

PRIMARY

SIDE

X23

V_{DRAIN,HI GH}

OCP

V_{D,HI GH}

DE-MODULATOR

Dead time

setting

R_{GATE,OF F}

ENABLE

STATUS

CONTROLLER

X21

X22

V_{GATE,HI GH}

C_GS

ISOLATED

SUPPLY

CONTROLLER

MODULATOR

GND_{HI GH}

VOLTAGE

MONITOR

R_GATE,ON

V_IN+,HIGH

V_IN-,HIGH

DIFFERENTIAL

RECEIVER

DEAD TIME

GENERATOR

HIGH SIDE

GND_{HI GH}

V_IN+,LOW

V_IN-,LOW

DIFFERENTIAL

RECEIVER

SECONDARY HIGH SIDE

SECONDARY LOW SIDE

CONTROLLER

X10

STATUS

RESET

GND_{LO W}

STATUS

CONTROLLER

MODULATOR

LOW SIDE

VOLTAGE

MONITOR

R_GATE,ON

X31

X32

GND_{LO W}

V_POWER

C_GS

BOARD

SUPPLIES

STATUS

CONTROLLER

GND

V_{GATE,LO W}

ENABLE

R_{GATE,OF F}

DE-MODULATOR

VOLTAGE

MONITOR

FAULT

DETECTION

V_{D,LO W}

OCP

X33

V_DRAIN,LOW

CONTROLLER

R_OC

P

C_BLA

NK

OCP settings

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

1 of 12

1. Electrical characteristics

1.1. Operating range

Within the operating range the driver operates as described in the functional description. Unless

otherwise noted all voltages refer to GND.

Table 1-1, Operating range

Item

Description

Supply voltage

Inputs OCP

Min

14.5

0

Typ

-

Max

26

1700

Unit

[V]

Remarks

V_POWER

V_D,HIGH

V_D,LOW

-

Referred to

respectively

GND_HIGHand

GND_LOW

-

|V_GND,HIGH/dt|

|V_GND,LOW/dt|

T_AMB

Maximum voltage transients @ the

secondary ground

Operating temperature range, no

airflow

-

100

85

kV/µs

[°C ]

-40

No condensation

1.2. Electrical characteristics

Table 1-2, Input power

Item

Description

Min

-

Typ

12

3.5

Max

-

4

Unit

[W]

Remarks

f_SWITCH=100kHz

-

P_{IN,OPERATIONAL}Power consumption PT62SCMD12¹⁾

P_IN,IDLE

Idle Power consumption

PT62SCMD12

Note¹⁾In combination with module CAS300M12BM2

Table 1-3, Differential RS422 inputs

Item

Description

Min

Typ

Max

Unit

Remarks

V_INX,X

Single ended input level

-7

-

12

[V]

-

ΔV_IN,X

Differential input high-threshold

voltage

Differential input low-threshold

voltage

0.7

-

[V]

ΔV_IN,X= ΔV_IN+,X- ΔV_IN-,X

-0.2

R_ID

Differential input impedance

120

[Ohm]

-

Table 1-4, Logic output

Item

V_STATUS= OK

Description

Status output voltage when

Min

4.7

Typ

-

Max

-

Unit

[V]

Remarks

-

the status of the driver is OK

Status output voltage when

the status of the driver is

NOK

V_STATUS= NOK

-

0.8

[V]

-

Table 1-5, Gate drivers

Item

Description

Min

Typ

Max

Unit

Remarks

V_GATE,HIGH= HIGH

V_GATE,LOW= HIGH

V_GATE,HIGH= LOW

V_GATE,LOW= LOW

High level output voltage,

V_POWER=24V

Low level output voltage,

V_POWER=24V

18

20

22

[V]

Referred to

respectively

GND_HIGHand

GND_LOW

-8

-6

-

-4

-

[V]

[A]

V_GATE,HIGH= HIGH

V_GATE,LOW= HIGH

Note¹⁾With R_GATE,ON= R_GATE,OFF= 0Ohm

Peak output current

capability¹⁾

20

-

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

2 of 12

Table 1-6, Reset

Item

Description

Min

Typ

Max

Unit

Remarks

V_RESET

Input voltage range RESET

input

-0.3

-

6

[V]

-

V_RESET= HIGH

V_RESET= LOW

t_RESET

Reset high input voltage

Reset low input voltage

Pulse width of RESET for

clearing errors

3.5

-

10

-

1.5

-

[V]

[us]

-

Table 1-7, Dynamical characteristics @ T_AMB= 25°C

Item

Description

Min

Typ

Max

Unit

[ns]

Remarks

t_ON,PROP

t_OFF,PROP

t_ON,RISE

t_OFF,FALL

Δt

Turn on propagation delay

Turn off propagation delay

Turn on rise time PT62SCMD12¹⁾

Turn off fall time PT62SCMD12¹⁾

Delay mismatch (high and low side turn

on and off)²⁾

-

100

400

250

0.25

125

500

300

2.5

See section 1.2.1

for definitions

|t_JITTER

|

Absolute jitter of turn off and turn on

-

DC

0

1

-

2.5

125

1000

-

[ns]

[kHz]

[ns]

-

delay²⁾

f_SWITCH

Switching frequency

Limited by

P_OUT,AVG

See section 1.3.2

and section 4.4

t_DEAD,PROG

t_BLANKING

Programmable dead time

-

Blanking time. This is the time in

between turning on the MOSFET and

monitoring the V_DS.

1

-

[us]

-

t_STARTUP

Start-up timing

-

75

100

[ms]

See section 1.2.1

for definitions

Note¹⁾In combination with module CAS300M12BM2

Note²⁾Measured without connected module/load and R_GATE,ON= R_GATE,OFF= 0Ohm

1.2.1. Timing definitions

V_IN

V_GATE

80%

20%

80%

20%

t_ON,RISE

t_ON,PROP

t_OFF,PROP

t_OFF,FALL

Figure 1-1, Propagation delay

Figure 1-2, Rise/fall time

V_IN,HIGH

V_POWER

15V

V_IN,LOW

V_IN,X

V_GATE,HIGH

V_GATE,X

V_GATE,LOW

t_STARTUP

Δt

Figure 1-3, Delay mismatch

Figure 1-4, Start-up timing

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

3 of 12

1.3. Protections

1.3.1. Under Voltage Lock Out (UVLO)

Both secondary sides are equipped with an UVLO indirectly monitoring the gate voltages.

Table 1-8, UVLO

Item

Description

Min

Typ

Max

Unit

Remarks

V_UVLO,SEC

Secondary side under voltage lock out

16

18

-

[V]

Only positive

voltage is

monitored

The primary side is equipped with an UVLO and an OVLO (Over Voltage Lock Out) monitoring an

internally generated supply voltage.

1.3.2. Dead-time generator

The driver has an on-board dead-time generator which overrules the input signals when the dead-

time of the applied PWM signals (t_DEAD,IN) becomes larger than the set dead-time (t_DEAD,PROG). Note

that when the dead-time generator has to intervene, the jitter increases to a maximum of 10ns.

The dead time is by default set at 500ns, but can be changed by modifying R901 and R902. See

chapter 4 for application information.

Table 1-9 Dead time settings

R₉₀₁

R₉₀₂

not assembled

assembled

not assembled

assembled

t_DEAD

1000

500

250

-

unit

[ns]

Remarks

not assembled

assembled

-

Default setting

-

Dead time disabled

assembled

1.3.3. Over Current Protection (OCP)

The driver features V_DSmonitoring for protecting the modules against overcurrent. Both the

blanking time (time the monitor is not-active when switching on), as the V_DSlevel (proportional with

I_DS) is user-adjustable.

Table 1-10 V_DSmonitoring

Item

Description

Default V_DStrip level PT62SCMD12

Default Blanking time

Delay between a detected over current

and a shutdown of the driver

Delay between an over current

protection and a low going STATUS at

the primary side.

Min

Typ

Max

-

1.25

1

Unit

[V]

[us]

Remarks

V_DS,TRIP

t_BLANKING

t_SHUTDOWN

-

0.75

-

4

1

-

See Figure 1-6

t_STATUS

-

100

[us]

-

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

4 of 12

V_IN

V_DRIVER

V_GATE

V_DS

V_IN

V_DRIVER

V_GATE

V_DS

SHORT

V_DS,TRIP

V_DS

MONITOR

V_DS

MONITOR

SHORT

DETECTED

OCP

t_SHUTDOWN

t_BLANKING

Figure 1-5, Timing V_DSmonitor under nominal

conditions

Figure 1-6, Timing V_DSmonitor when an over

current is detected

1.3.4. Errors and stating

In the table below the LED and the output status is listed for all situations.

Table 1-11 Optical status interfacing

State

LED PRIMARY

SIDE

LED SECONDARY

SIDE

OUTPUT STATUS

POWER

ERROR

OFF

HIGH

LOW

V_GATE,HIGH

As input

V_GATE,LOW

As input

Operational

Primary error

-

INIT

error²⁾

UVLO

or

OFF

0V

-

OFF

LOW

OVP

Secondary error

UVLO

or

OCP

-

OFF

LOW

UVLO

or

-

OFF

OCP

Note¹⁾The symbols and are representing blinking LED’s

Note²⁾Initialization error of the driver

1.4. Gate resistance

The applied gate resistances are listed in the table below.

Table 1-12 Gate resistances

Driver ID

PT62SCMD12

Item

unit

R_GATE,ON

R_GATE,OFF

C_GS

5

2.5

18

[Ohm]

[nF]

1)

Note¹⁾Note that the effective turn-off resistance is specified

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

5 of 12

1.5. Electrical isolation

Table 1-13 Grade of insulation¹⁾

Circuit

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

-

BASIC

-

BASIC

-

BASIC

Note¹⁾Based on NEN-EN-IEC 60950

Table 1-14 Clearance distances

Circuit

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

-

11.6mm

-

6.2mm

11.6mm

6.2mm

-

11.6mm

Table 1-15 Creepage distances

Circuit

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

PRIMARY

SECUNDARY_LOW

SECUNDARY_HIGH

-

11.6mm

-

23.2mm

11.6mm

23.2mm

-

11.6mm

A safety test is applied at every driver produced, used test parameters are listed below.

Table 1-16 Safety test

Item

Description

Min

Typ

Max

Unit

Remarks

V_TEST

Test voltage primary to secondary side

1s, non-

repetitive

-

5

-

[kV_DC]

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

6 of 12

2. Electrical interfaces

2.1. MOSFET terminals

Table 2-1 MOSFET terminals

Terminal ID

Mnemonic driver

Pinning @ MOSFET

module

Connector style

X21

X22

X23

X31

X32

X33

V_GATE,HIGH

GND_HIGH

V_DRAIN,HIGH

GND_LOW

V_GATE,LOW

V_DRAIN,LOW

4

5

3

7

6

1

Faston 2.8mm x 0.5mm

receptacle

2.2. Input connector

Table 2-2 Input connector

Connector ID

X10

Pin#

Mnemonic driver

V_IN+,HIGH

V_IN-,HIGH

RESET

GND

V_IN+,LOW

V_IN-,LOW

STATUS

V_POWER

Interface

1

2

3

4

5

6

7

8

2 x 4pin boxed header, angled, lockable & keyed.

2.54mm pitch

PCB

7

8

5

6

3

4

1

2

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

7 of 12

3. Mechanical characteristics

Top view

135mm

130mm

10mm

C_BLANK

X33

LED

LOW

SIDE

R_OCP

X32

X31

TOP VIEW

X10

X22

X21

R_OCP

LED

HIGH

SIDE

M2.5

2.7mm

X23

5mm

4.5mm

5mm

Figure 3-1, Dimensions, top view

Bottom view

Figure 3-2, Bottom view

Side view

1.6mm

X10

Figure 3-3, Dimensions, side view

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

8 of 12

4. Application notes

4.1. Input connection.

Connector

For the input connector (X10) a boxed header from Wurth is applied (612 008 217 21), a possible

mating wire connector is for example the 71600-608LF from FCI.

Wiring

For increasing the immunity of the PWM input signals the driver is equipped with differential inputs.

For reaching maximum performance the differential pairs should be physically kept close to each

other by using for example a flat cable with twisted differential pairs.

Although the differential concept already gives additional immunity it is still recommended to keep

the PWM signal lines away from conductors carrying large currents. Shielding of the wires will

increase the immunity further.

4.2. Input power.

The ramp-up of the supply voltage during start-up should be smooth and no dips should occur.

V_POWER

PREFERRED

NOT-PREFERRED

Figure 4-1, Behavior input voltage during start-up

4.3. Disabling OCP

If it, for any reason, is desired to disable the OCP then this can be achieved by interconnecting:



X31 with X33 and

X22 with X23

Note that when X23 and/or X33 are not connected the driver will always enter its error stated when

PWM is applied.

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

9 of 12

4.4. Modifying dead-time and OCP settings

In this section information is given for modifying dead time, V_DStrip level and/or blanking time.

Modifying dead-time

The dead time can be programmed by assembling the resistors R901 and R902 (0603 package).

Values of the resistors should be 220Ohm or lower. The possible settings are listed below.

Figure 4-2, Location R901 and R902

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

10 of 12

Modifying blanking time

The blanking time can be modified by changing C_BLANK(0603 package). Settings are listed below,

locations are shown in Figure 4-2. For C_BLANKa capacitor with NP0 dielectric is recommended, the

voltage rating should be at least 25V.

Table 4-1 t_BLANKINGsetting

C_BLANK

t_,BLANKING

unit

Remarks

56pF

120pF

390pF

560pF

0.5

1

3

[us]

-

Default setting

-

5

Modifying V_DS,TRIPsetting

The V_DStrip-level can be modified by changing R_OCP(1206 package). Settings are listed below,

locations are shown in Figure 4-3.

Table 4-2 V_DS,TRIPsetting PT62SCMD12

R_OCP

1550

1000

560

Unit

V_DS,TRIP

unit

[V]

Remarks

[Ohm]

1

2

3

4

-

47

Default setting PT62SCMD12

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

11 of 12

Figure 4-3, Location R_OCPand R_BLANK

IMPORTANT INFORMATION AND DISCLAIMER

This datasheet is made available for your convenience only and may be updated without notice. Prodrive Technologies

makes no representation or warranty as to the accuracy of the data provided. Products are only sold subject to Prodrive

Technologies terms and conditions of sale. Products are not intended for military, space, aircraft or life support applications

unless explicitly agreed in writing otherwise. Your use of these data remains solely your responsibility. In no event shall

Prodrive Technologies liability arising out of this datasheet exceed the purchase price paid for the products concerned.

For more technical or commercial information visit: http://www.prodrive-technologies.com or send an email to

power@prodrive-technologies.com

Datasheet PT62SCMD12 SIC MOSFET driver R08

15 September 2014

12 of 12


型号：	PT62SCMD12
厂家：	CREE, INC
描述：	Dual 1200V SIC MOSFET driver
文件：	总12页 (文件大小：1014K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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