E4D20120A [CREE]
Silicon Carbide Schottky Diode E-Series Automotive;
| 型号： | E4D20120A |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Schottky Diode E-Series Automotive |
| 文件： | 总6页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
E4D20120A
Silicon Carbide Schottky Diode
E-Series Automotive
Features
Package
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4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
AEC-Q101 Qualified and PPAP Capable
Humidity Resistant
Benefits
TO-220-2
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Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Ideal for Outdoor Environments
PIN 1
PIN 2
CASE
Applications
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Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Automotive and Traction Power Conversion
PV Inverters
Part Number
Package
Marking
E4D20120
E4D20120A
TO-220-2
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VRRM
VR
Repetitive Peak Reverse Voltage
DC Peak Reverse Voltage
1200
1200
V
V
54.5
26
20
TC=25˚C
TC=135˚C
TC=150˚C
IF
Continuous Forward Current
Power Dissipation
A
Fig. 3
Fig. 4
250
112.5
TC=25˚C
TC=110˚C
Ptot
W
91
61
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFRM
dV/dt
∫i2dt
Repetitive Peak Forward Surge Current
Diode dV/dt ruggedness
i2t value
A
250
V/ns
A2s
VR=0-960V
84.5
60.5
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
-55 to
+175
T , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
˚C
J
1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
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E4D20120A Rev. -, 07-2018
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
V
Test Conditions
Note
Fig. 1
Fig. 2
1.5
2.2
1.8
IF = 20 A T =25°C
J
VF
IR
Forward Voltage
Reverse Current
IF = 20 A T =175°C
J
35
65
200
VR = 1200 V T =25°C
J
μA
VR = 1200 V T =175°C
J
VR = 800 V, IF = 20A
di/dt = 200 A/μs
QC
Total Capacitive Charge
99
nC
Fig. 5
T = 25°C
J
1500
93
67
VR = 0 V, T = 25°C, f = 1 MHz
J
C
Total Capacitance
pF
VR = 400 V, T = 25˚C, f = 1 MHz
Fig. 6
Fig. 7
J
VR = 800 V, T = 25˚C, f = 1 MHz
J
EC
Capacitance Stored Energy
28
μJ
VR = 800 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
0.6
Unit
Note
RθJC
Thermal Resistance from Junction to Case
°C/W
Fig. 9
Typical Performance
40
1,000
TJ = -55 °C
900
800
700
600
500
400
300
200
100
0
35
TJ = 25 °C
TJ = 75 °C
30
TJ = 125 °C
25
TJ = 175 °C
20
15
10
5
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
0
0
1
2
3
4
0
500
1000
1500
VF (V)
VR (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
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E4D20120A Rev. -, 07-2018
Typical Performance
280
240
200
160
120
80
200
180
160
140
120
100
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
40
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC ˚C
TC ˚C
Figure 3. Current Derating
Figure 4. Power Derating
140
120
100
80
1600
1400
1200
1000
800
600
400
200
0
60
40
20
0
0
200
400
600
800
1000
1200
0.1
1
10
100
1000
VR (V)
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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E4D20120A Rev. -, 07-2018
Typical Performance
50
10000
45
40
35
1000
30
25
20
T
J_initial = 25°C
100
TJ_initial = 110°C
15
10
5
10
1E-05
0
0
200
400
600
800
1000
1E-04
1E-03
1E-02
VR (V)
tp (s)
Figure 8. Non-Repetitive Peak Forward Surge Current
Figure 7. Typical Capacitance Stored Energy
versus Pulse Duration (sinusoidal waveform)
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figure 9. Transient Thermal Impedance
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E4D20120A Rev. -, 07-2018
Package Dimensions
Package TO-220-2
Inches
Millimeters
Min
POS
Min
.381
.235
.100
.223
Max
.410
.255
.120
.337
Max
10.414
6.477
3.048
8.560
A
B
9.677
5.969
2.540
5.664
C
D
D1
D2
D3
E
.457-.490
11.60-12.45 typ
.277-.303 typ
.244-.252 typ
7.04-7.70 typ
6.22-6.4 typ
.590
.615
.326
251
.153
1.147
.550
.036
.055
.205
.185
.054
6°
14.986
15.621
8.28
E1
E2
F
.302
.227
.143
1.105
.500
.025
.045
.195
.165
.048
3°
7.68
5.77
3.632
28.067
12.700
.635
1.143
4.953
4.191
1.219
3°
6.37
3.886
29.134
13.970
.914
G
H
L
M
N
P
1.550
5.207
4.699
1.372
6°
Q
S
T
3°
6°
3°
6°
U
3°
6°
3°
6°
V
.094
.014
3°
.110
.025
5.5°
.410
.150
2.388
.356
3°
2.794
.635
W
X
PIN 1
PIN 2
5.5°
CASE
Y
.385
.130
9.779
3.302
10.414
3.810
z
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Package
Part Number
Marking
E4D20120A
TO-220-2
E4D20120
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
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E4D20120A Rev. -, 07-2018
Diode Model
VfT = VT+If*RT
T = 0.97 + (TJ * -1.40*10-3)
V
R
T = 0.023 + (TJ * 2.71*10-4)
Note: T = Diode Junction Temperature In Degrees Celsius,
J
valid from 25°C to 175°C
VT
RT
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-
old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
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Wolfspeed E-Series Family: http//wolfspeed.com/E-Series
Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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E4D20120A Rev. -, 07-2018
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