CGHV35120F [CREE]

RF Power Field-Effect Transistor,;

CGHV35120F


型号：	CGHV35120F
厂家：	CREE, INC
描述：	RF Power Field-Effect Transistor,
文件：	总10页 (文件大小：540K)
下载：	下载PDF数据表文档文件

CGHV35150

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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1 CREE

CGHV35150F

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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0 CREE

CGHV35150F-AMP

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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2 CREE

CGHV35150P

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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2 CREE

CGHV35150-TB

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

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1 CREE

CGHV35400F

400 W, 2900 - 3500 MHz, 50-Ohm Input

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1 CREE

CGHV35400F-AMP

400 W, 2900 - 3500 MHz, 50-Ohm Input

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1 CREE

CGHV35400F-TB

400 W, 2900 - 3500 MHz, 50-Ohm Input

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0 CREE

CGHV37400F

400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

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9 CREE

CGHV40030

30 W, DC - 6 GHz, 50V, GaN HEMT

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2 CREE

CGHV40030F

30 W, DC - 6 GHz, 50V, GaN HEMT

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1 CREE

CGHV40030F-AMP

30 W, DC - 6 GHz, 50V, GaN HEMT

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0 CREE

CGHV40030P

30 W, DC - 6 GHz, 50V, GaN HEMT

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1 CREE

CGHV40030-TB

30 W, DC - 6 GHz, 50V, GaN HEMT

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1 CREE

CGHV40050

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

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6 CREE

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